Single MOSFET Transistors
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| Manufacturer Part No | Order Code | Description / Manufacturer | Availability | Price For |
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Quantity | Channel Type | Drain Source Voltage Vds | Continuous Drain Current Id | Drain Source On State Resistance | Transistor Case Style | Transistor Mounting | Rds(on) Test Voltage | Gate Source Threshold Voltage Max | Power Dissipation | No. of Pins | Operating Temperature Max | Product Range | Qualification | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRLR8726TRPBF
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SC17015 |
SMD N Channel Power MOSFET, 30V, 86A, 0.004 Ohm, TO-252AA INFINEON • Suitable for high frequency synchronous buck converters for computer processor power • Suitable for high frequency isolated DC-DC converters with synchronous rectification for telecom and industrial use • Very Low RDS at 4.5V GS • Ultra low gate impedan...
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N Channel | 30V | 86A | 0.0058ohm | TO-252AA | Surface Mount | 10V | 1.8V | 75W | 3Pins | 175°C | HEXFET | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
PMV250EPEAR
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SC16738 |
Power MOSFET, P Channel, 40 V, 1.5 A, 0.24 ohm, SOT-23, Surface Mount NEXPERIA The PMV250EPEA is a P-channel enhancement mode Field-Effect Transistor (FET) in surface mount plastic package using Trench MOSFET technology. Suitable for high-speed line driver and high-side load switch. • Logic-level compatible • Very fast switching • AE...
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P Channel | 40V | 1.5A | 0.24ohm | SOT-23 | Surface Mount | 10V | 1.7V | 480mW | 3Pins | 150°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
STH3N150-2
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SC16870 |
Power MOSFET, N Channel, 1.5 kV, 2.5 A, 9 ohm, H2PAK-2, Surface Mount STMICROELECTRONICS • 1500V, 2.5A N-channel PowerMESH™ power MOSFET in 3 pin H2PAK-2 package • 100% avalanche tested • Intrinsic capacitances and Qg minimized • High speed switching • Designed using company’s consolidated strip layout-based MESHOVERLAY™ process • Suitable fo...
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N Channel | 1.5kV | 2.5A | 9ohm | H2PAK-2 | Surface Mount | 10V | 4V | 140W | 3Pins | 150°C | PowerMESH | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
DMN3023L-7
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SC15970 |
Power MOSFET, N Channel, 30V, 6.2A, 0.025 Ohm, SOT-23, SMD DIODES INC. DMN3023L-7 is a N-channel enhancement mode MOSFET. This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and maintain superior switching performance, making it ideal for high-efficiency power management applications. Typical ...
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N Channel | 30V | 6.2A | 0.025ohm | SOT-23 | Surface Mount | 10V | 1.8V | 900mW | 3Pins | 150°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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ZXM61P02F
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SC16878 |
Power MOSFET, P Channel, 20 V, 900 mA, 0.6 ohm, SOT-23, Surface Mount DIODES INC. The ZXM61P02F is a P-channel enhancement-mode MOSFET with moulded plastic case and solderable matte tin-finish terminals as per MIL-STD-202 standard. It utilizes unique structure that combines the benefits of low ON-resistance with fast switching speed, ma...
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P Channel | 20V | 900mA | 0.6ohm | SOT-23 | Surface Mount | 4.5V | 700mV | 625mW | 3Pins | 150°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRF7416TRPBF
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SC15957 |
Power MOSFET, P Channel, 30V, 10A, 0.02 Ohm, SOIC, SMD INFINEON • Channel Type : P Channel • Drain Source Voltage Vds : 30V • Continuous Drain Current Id : 10A • Drain Source On State Resistance : 0.02ohm • Transistor Case Style : SOIC • Transistor Mounting : Surface Mount • Rds(on) Test Voltage : 10V • Gate Source Threshold Voltage Max : 2.04V • Power Dissipation : 2.5W • No. of Pins : 8Pins • Operating Temperature Max : 150°C • Product Range : HexFET
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P Channel | 30V | 10A | 0.02ohm | SOIC | Surface Mount | 10V | 2.04V | 2.5W | 8Pins | 150°C | HexFET | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IPB072N15N3GATMA1
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SC16960 |
Power MOSFET, N Channel, 150 V, 100 A, 0.0058 ohm, TO-263 (D2PAK), Surface Mount INFINEON The IPB072N15N3 G is an OptiMOS™ 3 N-channel Power Transistor with low resistance, excellent switching performance, increased efficiency, excellent gate charge x R DS (ON) product (FOM) and smallest board-space consumption. • Environment-friendly • High po...
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N Channel | 150V | 100A | 0.0058ohm | TO-263 (D2PAK) | Surface Mount | 10V | 3V | 300W | 3Pins | 175°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BS107P
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SC16884 |
N Channel Power MOSFET, 200V, 120mA, 30 Ohm, E-Line DIODES INC. • Case: E-Line (TO-92 Compatible) • Case Material: Molded Plastic, “Green” Molding Compound UL Flammability Rating 94V-0
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N Channel | 200V | 120mA | 30ohm | E-Line | Through Hole | 5V | 3V | 500mW | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRFP4468PBF
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SC15830 |
Power MOSFET, N Channel, 100V, 290A, 0.002 ohm, TO-247AC, INFINEON The IRFP4468PBF is a 100V single N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using Trench MOSFET technology. Suitable for high efficiency synchronous rectification in SMPS, uninterruptible...
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N Channel | 100V | 290A | 0.0026ohm | TO-247AC | Through Hole | 20V | 4V | 520W | 3Pins | 175°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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FQPF27P06
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SC16932 |
Power MOSFET, P Channel, 60 V, 17 A, 0.07 ohm, TO-220F, Through Hole ONSEMI The FQPF27P06 is a -60V P-channel QFET® enhancement mode Power MOSFET is produced using planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance and to provide superior switching performa...
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P Channel | 60V | 17A | 0.07ohm | TO-220F | Through Hole | 10V | 2V | 47W | 3Pins | 175°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SI2312CDS-T1-GE3
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SC16735 |
Power MOSFET, N Channel, 20 V, 6 A, 0.0318 ohm, SOT-23, Surface Mount VISHAY The SI2312CDS-T1-GE3 is a 20V N-channel TrenchFET® Power MOSFET. Suitable for DC to DC converters and load switch for portable applications. The surface-mounted LITTLE FOOT® power MOSFET uses integrated circuit and small-signal packages which have been mod...
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N Channel | 20V | 6A | 0.0318ohm | SOT-23 | Surface Mount | 4.5V | 450mV | 1.25W | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SI2393DS-T1-GE3
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SC16883 |
SMD P Channel Power MOSFET, 30V, 7.5A, 0.0189 Ohm, SOT-23 VISHAY • TrenchFET® Gen IV P channel power MOSFET • 100% Rg and UIS tested
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P Channel | 30V | 7.5A | 0.0227ohm | SOT-23 | Surface Mount | 10V | 2.2V | 2.5W | 3Pins | 150°C | TrenchFET Gen IV | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BSS138NH6327XTSA2
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SC15994 |
Power MOSFET, N Channel, 60V, 230mA, 2.2 Ohm, SOT-23, SMD INFINEON • 60V, 0.23A, N-channel SIPMOS® small signal transistor in 3 pin SOT-23 package • Enhancement mode • Logic level • dv/dt rated • Qualified according to AEC Q101
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N Channel | 60V | 230mA | 3.5ohm | SOT-23 | Surface Mount | 10V | 1V | 360mW | 3Pins | 150°C | - | AEC-Q101 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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TP0606N3-G
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SC16919 |
P Channel Power MOSFET, Vertical DMOS FET, 60V, 320mA, 3 Ohm, TO-92 MICROCHIP This low threshold, enhancement-mode (normally-off) transistor utilises a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors...
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P Channel | 60V | 320mA | 3.5ohm | TO-92 | Through Hole | 10V | 2.4V | 1W | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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DMG2305UX-13
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SC16744 |
Power MOSFET, P Channel, 20V, 4.2A, 0.04 Ohm, SOT-23, SMD DIODES INC. DMG2305UX-13 is a P-channel enhancement mode MOSFET in a 3 pin SOT23 package. This MOSFET is designed to minimize on-state resistance (RDS(on)), yet maintain superior switching performance, making it ideal for high efficiency power management applications....
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P Channel | 20V | 4.2A | 0.052ohm | SOT-23 | Surface Mount | 4.5V | 900mV | 1.4W | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRFZ24NPBF
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SC16935 |
N Channel Power MOSFET, 55V, 17A, 0.07 Ohm, TO-220AB INFINEON Single N-channel HEXFET® power MOSFET. • Advanced process technology • Dynamic dv/dt rating • Fast switching • Fully avalanche rated • Planar cell structure for wide SOA • Product qualification according to JEDEC standard • High-current rating • Increased ...
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N Channel | 55V | 17A | 0.07ohm | TO-220AB | Through Hole | 10V | 4V | 45W | 3Pins | 175°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRFB4110PBF
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SC16958 |
Power MOSFET, N Channel, 100 V, 180 A, 0.0045 ohm, TO-220AB, Through Hole INFINEON The IRFB4110PBF is a 100V single N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using Trench MOSFET technology. Suitable for high efficiency synchronous rectification in SMPS, uninterruptible...
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N Channel | 100V | 180A | 0.0045ohm | TO-220AB | Through Hole | 10V | 4V | 370W | 3Pins | 175°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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STW4N150
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SC15828 |
Power MOSFET, N Channel, 1.5kV, 4A, 7 ohm, TO-247, STMICROELECTRONICS The STW4N150 is a 1500V N-channel Power MOSFET developed using the well consolidated high voltage MESH OVERLAY™ process. The strengthened layout coupled with the proprietary edge termination structure gives the lowest RDS (on) per area, unrivalled gate cha...
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N Channel | 1.5kV | 4A | 7ohm | TO-247 | Through Hole | 10V | 4V | 160W | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BSN20BKR
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SC16765 |
Power MOSFET, Trench, N Channel, 60V, 265mA, 2.1 Ohm, SOT-23, SMD NEXPERIA The BSN20BK from Nexperia is a N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. • Suitable for relay drivers, high speed line drivers, low-side...
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N Channel | 60V | 265mA | 2.8ohm | SOT-23 | Surface Mount | 10V | 1V | 310mW | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SI2301CDS-T1-GE3
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SC16862 |
Power MOSFET, P Channel, 20 V, 3.1 A, 0.112 ohm, SOT-23, Surface Mount VISHAY The SI2301CDS-T1-GE3 is a 20VDS TrenchFET® P-channel enhancement-mode Power MOSFET suitable for load switch applications. • Halogen-free • -55 to 150°C Operating temperature range
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P Channel | 20V | 3.1A | 0.112ohm | SOT-23 | Surface Mount | 4.5V | 400mV | 1.6W | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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FDN352AP
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SC16755 |
Power MOSFET, P Channel, 30 V, 1.3 A, 0.18 ohm, SuperSOT, Surface Mount ONSEMI The FDN352AP is a P-channel Logic Level MOSFET produced using advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. This device is well suit...
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P Channel | 30V | 1.3A | 0.18ohm | SuperSOT | Surface Mount | 10V | 2V | 500mW | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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DMP6023LE-13
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SC15971 |
Power MOSFET, P Channel, 60V, 18.2A, 0.028 Ohm, SOT-223, SMD DIODES INC. DMP6023LE-13 is a P-channel enhancement mode MOSFET. This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and maintain superior switching performance, making it ideal for high efficiency power management applications. Typical applications ...
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P Channel | 60V | 18.2A | 0.028ohm | SOT-223 | Surface Mount | 10V | 3V | 17.3W | 4Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SUM110P04-05-E3
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SC16869 |
Power MOSFET, P Channel, 40 V, 110 A, 0.005 ohm, TO-263 (D2PAK), Surface Mount VISHAY The SUM110P04-05-E3 is a -40V P-channel TrenchFET® Power MOSFET.
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P Channel | 40V | 110A | 0.005ohm | TO-263 (D2PAK) | Surface Mount | 10V | 3V | 375W | 3Pins | 175°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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ZXMN6A07FTA
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SC16749 |
Power MOSFET, N Channel, 60 V, 1.4 A, 0.25 ohm, SOT-23, Surface Mount DIODES INC. ZXMN6A07FTA is a N-channel enhancement mode MOSFET. This MOSFET utilizes a unique structure that combines the benefits of low on-resistance with a fast switching speed, making it ideal for high-efficiency power-management applications. Typical applications...
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N Channel | 60V | 1.4A | 0.25ohm | SOT-23 | Surface Mount | 10V | 3V | 806mW | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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FDS9435A
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SC16915 |
Power MOSFET, P Channel, 30 V, 5.3 A, 0.05 ohm, SOIC, Surface Mount ONSEMI The FDS9435A is a -30V P-channel PowerTrench® MOSFET has been specially tailored to minimize the on-state resistance and to maintain low gate charge for superior switching performance. The medium voltage power MOSFET is optimized power switches combining s...
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P Channel | 30V | 5.3A | 0.05ohm | SOIC | Surface Mount | 10V | 1.7V | 2.5W | 8Pins | 175°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||