Single MOSFET Transistors
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| Manufacturer Part No | Order Code | Description / Manufacturer | Availability | Price For |
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Quantity | Channel Type | Drain Source Voltage Vds | Continuous Drain Current Id | Drain Source On State Resistance | Transistor Case Style | Transistor Mounting | Rds(on) Test Voltage | Gate Source Threshold Voltage Max | Power Dissipation | No. of Pins | Operating Temperature Max | Product Range | Qualification | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BSS84
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SC11030 |
Power MOSFET, P Channel, 50 V, 130 mA, 1.2 ohm, SOT-23, Surface Mount ONSEMI The BSS84 is P channel logic level enhancement mode field effect transistor in SOT-23 package. This product is designed to minimize on state resistance while provide rugged, reliable and fast switching performance thus BSS84 are suited for low voltage, low...
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P Channel | 50V | 130mA | 1.2ohm | SOT-23 | Surface Mount | 5V | 1.7V | 360mW | 3Pins | 150°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRFP460
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SC06074 |
Power MOSFET, N Channel, 500 V, 20 A, 0.27 ohm, TO-247AC, Through Hole VISHAY • Channel Type : N Channel • Drain Source Voltage Vds : 500V • Continuous Drain Current Id : 20A • Drain Source On State Resistance : 0.27ohm • Transistor Case Style : TO-247AC • Transistor Mounting : Through Hole • Rds(on) Test Voltage : 10V • Gate Source Threshold Voltage Max : 2V • Power Dissipation : 250W • No. of Pins : 3Pins • Operating Temperature Max : 150°C
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N Channel | 500V | 20A | 0.27ohm | TO-247AC | Through Hole | 10V | 2V | 250W | 3Pins | 150°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
STN2NF10
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SC11058 |
Power MOSFET, N Channel, 100 V, 2 A, 0.23 ohm, SOT-223, Surface Mount STMICROELECTRONICS The STN2NF10 is a STripFET™ II N-channel Power MOSFET developed using unique Single Feature Size™ strip-based process. The device has extremely high packing density for low ON-resistance, rugged avalanche characteristics and less critical alignment steps t...
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N Channel | 100V | 2A | 0.23ohm | SOT-223 | Surface Mount | 10V | 4V | 3.3W | 4Pins | 150°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRF540NPBF
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SC08216 |
Power MOSFET, N Channel, 100 V, 33 A, 0.044 ohm, TO-220AB, Through Hole INFINEON The IRF540NPBF is 100V single N channel HEXFET power MOSFET in 3 pin TO-220AB package. It utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit combined with fast switching speed and ruggedized device...
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N Channel | 100V | 33A | 0.044ohm | - | Through Hole | 10V | 4V | 130W | 3Pins | 175°C | HEXFET Series | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRLML5203PBF
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SC07008 |
Power MOSFET, P Channel, 30 V, 3 A, 0.098 ohm, SOT-23, Surface Mount INFINEON The IRLML5203PBF from International Rectifier is -30V single P channel HEXFET power MOSFET in Micro3 (SOT-23) package. This MOSFET features extremely low on resistance per silicon area, ruggedness, fast switching, as a result, power MOSFET are well know to...
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P Channel | 30V | 3A | 0.098ohm | SOT-23 | Surface Mount | 10V | 2.5V | 1.25W | 3Pins | 150°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRLZ44NPBF
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SC11128 |
Power MOSFET, N Channel, 55 V, 47 A, 0.022 ohm, TO-220AB, Through Hole INFINEON The IRLZ44NPBF is a 55V single N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using advanced planar technology. • 175°C Operating temperature • Dynamic dV/dt rating • Fully avalanche rated • ...
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N Channel | 55V | 47A | 0.022ohm | - | Through Hole | 10V | 2V | 110W | 3Pins | 175°C | HEXFET Series | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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STP7NK40Z
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SC08224 |
Power MOSFET, N Channel, 400 V, 5.4 A, 1 ohm, TO-220, Through Hole STMICROELECTRONICS The STP7NK40Z is a SuperMESH™ N-channel Zener-protected Power MOSFET obtained through an extreme optimization of ST's well established strip-based PowerMESH™ layout. In addition to pushing ON-resistance significantly down, special care is taken to ensure a...
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N Channel | 400V | 5.4A | 1ohm | TO-220 | Through Hole | 10V | 3.75V | 70W | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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STP11NK40Z
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SC11110 |
Power MOSFET, N Channel, 400 V, 9 A, 0.55 ohm, TO-220, Through Hole STMICROELECTRONICS The STP11NK40Z is a SuperMESH™ N-channel Zener-protected Power MOSFET obtained through an extreme optimization of ST's well established strip-based PowerMESH™ layout. In addition to pushing ON-resistance significantly down, special care is taken to ensure ...
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N Channel | 400V | 9A | 0.55ohm | TO-220 | Through Hole | 10V | 3.75V | 110W | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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NX7002AK
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SC13942 |
Power MOSFET, N Channel, 60 V, 190 mA, 3 ohm, TO-236AB, Surface Mount NXP The NX7002AK is a N-channel enhancement mode Field-Effect Transistor (FET) in a Surface Mounted Device (SMD) plastic package using Trench MOSFET technology. • Very Fast Switching • ESD Protection Upto 1.5kV
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N Channel | 60V | 190mA | 3ohm | TO-236AB | Surface Mount | 10V | 1.6V | 265mW | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SIR422DP-T1-GE3
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SC16864 |
Power MOSFET, N Channel, 40 V, 40 A, 0.0054 ohm, PowerPAK SO, Surface Mount VISHAY The SIR422DP-T1-GE3 is a 40V N-channel TrenchFET® Power MOSFET. Suitable for use in synchronous rectification and point of load converter circuits. The N-channel MOSFET for switching applications are now available with die on resistances around 1mΩ and wit...
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N Channel | 40V | 40A | 0.0054ohm | PowerPAK SO | Surface Mount | 10V | 1.2V | 5W | 8Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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FDS4435BZ
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SC16772 |
Power MOSFET, P Channel, 30 V, 8.8 A, 0.016 ohm, SOIC, Surface Mount ONSEMI The FDS4435BZ is a -30V P-channel PowerTrench® MOSFET has been specially tailored to minimize the on-state resistance and to maintain low gate charge for superior switching performance. The latest medium voltage power MOSFET is optimized power switches com...
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P Channel | 30V | 8.8A | 0.016ohm | SOIC | Surface Mount | 10V | 2.1V | 2.5W | 8Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BS170-D27Z
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SC15773 |
Power MOSFET, N Channel, 60V, 500mA, 1.2 Ohm, TO-92 ONSEMI The BS170_D27Z is a N-channel enhancement-mode FET produced using high cell density DMOS technology. It is designed to minimize ON-state resistance while provide rugged, reliable and fast switching performance. It can be used in most applications requiring...
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N Channel | 60V | 500mA | 1.2ohm | TO-92 | Through Hole | 10V | 2.1V | 830mW | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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DMN3404L-7
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SC16731 |
Power MOSFET, N Channel, 30 V, 4.2 A, 0.028 ohm, SOT-23, Surface Mount DIODES INC. The DMN3404L-7 is a N-channel enhancement-mode MOSFET with moulded plastic case and solderable matte tin annealed over copper lead-frame terminals as per MIL-STD-202 standard. It is designed to minimize the ON-state resistance RDS (ON) and yet maintain sup...
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N Channel | 30V | 4.2A | 0.028ohm | SOT-23 | Surface Mount | 10V | 1.5V | 1.4W | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BSH111BKR
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SC16763 |
Trench Power MOSFET, N Channel, 55V, 210mA, 2.3 Ohm, SOT-23, SMD NEXPERIA The BSH111BK from Nexperia is a N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. • Suitable for relay driver, high speed line driver, low-side ...
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N Channel | 55V | 210mA | 2.3ohm | SOT-23 | Surface Mount | 4.5V | 1V | 302mW | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRLML9301TRPBF
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SC16719 |
Power MOSFET, P Channel, 30 V, 3.6 A, 0.051 ohm, SOT-23, Surface Mount INFINEON The IRLML9301TRPBF is a P-channel HEXFET® Power MOSFET with lower switch losses, increased reliability, industry-standard pinout and compatible with existing surface mount techniques. • Multi-vendor compatibility • Environment-friendly • MSL1, Consumer qua...
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P Channel | 30V | 3.6A | 0.051ohm | SOT-23 | Surface Mount | 10V | 1.3V | 1.3W | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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FDT457N
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SC16734 |
Power MOSFET, N Channel, 30 V, 5 A, 0.06 ohm, SOT-223, Surface Mount ONSEMI The FDT457N is a 30V N-channel enhancement mode Field Effect Transistor produced using high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance, provide superior switching performance. It is ...
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N Channel | 30V | 5A | 0.06ohm | SOT-223 | Surface Mount | 10V | 3V | 3W | 4Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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NX7002AKVL
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SC16890 |
SMD N Channel Power MOSFET, 60V, 190mA, 3 Ohm, TO-236AB NEXPERIA The NX7002AKVL from NEXPERIA is a N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. • Suitable for relay drive, high speed line driver, low side...
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N Channel | 60V | 190mA | 3ohm | TO-236AB | Surface Mount | 10V | 1.6V | 265mW | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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DMP3056L-7
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SC15968 |
Power MOSFET, P Channel, 30V, 4.3A, 0.035 Ohm, SOT-23, SMD DIODES INC. DMP3056L-7 is a P-channel enhancement mode MOSFET. This new generation MOSFET has been designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications. • ...
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P Channel | 30V | 4.3A | 0.05ohm | SOT-23 | Surface Mount | 10V | 2.1V | 1.38W | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRLML0060TRPBF
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SC16754 |
Power MOSFET, N Channel, 60 V, 2.7 A, 0.078 ohm, SOT-23, Surface Mount INFINEON The IRLML0060TRPBF is a N-channel HEXFET® Power MOSFET for load/system switch. • Industry Standard Pinout • MSL1, Industrial Qualification • Multi-vendor Compatibility • Environmentally-friendly • Surface Mount
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N Channel | 60V | 2.7A | 0.078ohm | SOT-23 | Surface Mount | 10V | 2.5V | 1.25W | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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FDN327N
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SC16796 |
Power MOSFET, N Channel, 20 V, 2 A, 0.07 ohm, SuperSOT, Surface Mount ONSEMI The FDN327N is a 20V specified N-channel MOSFET uses high voltage PowerTrench® process. It has been optimized for power management and load switch applications. • Fast switching speed • 4.5nC typical low gate charge
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N Channel | 20V | 2A | 0.07ohm | SuperSOT | Surface Mount | 4.5V | 700mV | 500mW | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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STD35P6LLF6
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SC16818 |
SMD P Channel Power MOSFET, 60V, 35A, 0.025 Ohm, TO-252 (DPAK) STMICROELECTRONICS This device is a P-channel Power MOSFET developed using the STripFET F6 technology, with a new trench gate structure. • Very low on-resistance • Very low gate charge • High avalanche ruggedness • Low gate drive power loss
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P Channel | 60V | 35A | 0.025ohm | TO-252 (DPAK) | Surface Mount | 10V | 2.5V | 70W | 3Pins | 175°C | STripFET F6 | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SQJ459EP-T1_GE3
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SC16852 |
Power MOSFET, P Channel, 60 V, 52 A, 0.0155 ohm, PowerPAK SO, Surface Mount VISHAY New AEC-Q101 automotive MOSFETs ffrom Vishay are manufactured on a dedicated process flow to instill ruggedness. Rated for a maximum junction temperature of 175 °C, the Vishay Siliconix AEC-Q101 qualified SQ series features low on-resistance n- and p-chann...
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P Channel | 60V | 52A | 0.0155ohm | PowerPAK SO | Surface Mount | 10V | 2V | 83W | 8Pins | 175°C | TrenchFET | AEC-Q101 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BSS131H6327XTSA1
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SC16714 |
Power MOSFET, N Channel, 240 V, 110 mA, 7.7 ohm, SOT-23, Surface Mount INFINEON The BSS131 H6327 is a N-channel Small Signal MOSFET qualified according to AEC-Q101 standard. • Enhancement-mode • Avalanche rated • Super logic level • dV/dt Rated • Green device
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N Channel | 240V | 110mA | 7.7ohm | SOT-23 | Surface Mount | 10V | 1.4V | 360mW | 3Pins | 150°C | - | AEC-Q101 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRFP450PBF
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SC17006 |
Power MOSFET, N Channel, 500 V, 14 A, 0.4 ohm, TO-247AC, Through Hole VISHAY The IRFP450PBF is a 500V N-channel Power MOSFET, third generation power MOSFET provides the designer with the best combination of fast switching, ruggedized device design and low on-resistance. • Dynamic dV/dt rating • Repetitive avalanche rated • Easy to ...
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N Channel | 500V | 14A | 0.4ohm | TO-247AC | Through Hole | 10V | 4V | 190W | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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2N7002-7-F
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SC15986 |
Power MOSFET, N Channel, 60V, 115mA, 13.5 Ohm, SOT-23, SMD DIODES INC. The 2N7002-7-F is a 60V N-channel enhancement mode Field Effect Transistor with matte tin-plated terminals. The terminals can solderable as per MIL-STD-202, method 208. This MOSFET has been designed to minimize the on-state resistance (RDS (on)) and yet ma...
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N Channel | 60V | 210mA | 13.5ohm | SOT-23 | Surface Mount | 10V | 2.5V | 370mW | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||