Semiconductors - Discretes
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Manufacturer Part No | Order Code | Description / Manufacturer | Availability | Price For |
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Quantity | Channel Type | Drain Source Voltage Vds | Continuous Drain Current Id | Drain Source On State Resistance | Transistor Case Style | Transistor Mounting | Rds(on) Test Voltage | Gate Source Threshold Voltage Max | Power Dissipation | No. of Pins | Operating Temperature Max | Product Range | Qualification | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BSS123,215
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SC19225 |
Power MOSFET, N Channel, 100V, 150mA, 3.5 Ohm, SOT-23, SMD NEXPERIA The BSS123 from NXP is a surface mount, N channel enhancement mode field effect transistor in SOT-23 package using TrenchMOS technology. This transistor features very high speed switching and logic level compatibility. BS123 is suitable for high speed line...
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N Channel | 100V | 150mA | 3.5ohm | SOT-23 | Surface Mount | 10V | 2V | 250mW | 3Pins | 150°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BZX84C10LT1G
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SC19253 |
Zener Single Diode, Voltage Regulator, 10V, 225mW, SOT-23, 6%, 3 Pins, 150°C ONSEMI The BZX84CxxxLT1G series surface mount Zener Diode designed to provide voltage regulation with minimum space requirement. They are well suited for applications such as cellular phones, hand held portables and high density PC boards. • 225mW Rating on FR-4 ...
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- | - | - | - | - | - | - | - | 225mW | 3Pins | 150°C | BZX84CxxxLT1G | AEC-Q101 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BAS70-04-7-F
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SC19121 |
SMD Small Signal Schottky Barrier Diode, 70V, 15mA, 1V, 100mA DIODES INC. The BAS70-04-7-F is a surface mount Schottky Barrier Diode encapsulated in a moulded plastic case. It has matte tin (lead-free plating) annealed over alloy 42 lead frame terminals and PN junction guard ring for transient and ESD protection. • Low turn-on v...
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- | - | - | - | - | - | - | - | - | 3Pins | 125°C | BAS70 | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SI2319DS-T1-E3
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SC19376 |
Power MOSFET, P Channel, 40V, 3A, 0.065 Ohm, TO-236, SMD VISHAY The SI2319DS-T1-E3 is a -40V P-channel TrenchFET? Power MOSFET. The surface-mounted LITTLE FOOT? power MOSFET uses integrated circuit and small-signal packages which have been modified to provide the heat transfer capabilities required by power devices. • ...
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P Channel | 40V | 3A | 0.065ohm | TO-236 | Surface Mount | 10V | 3V | 750mW | 3Pins | 150°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
GF1M-E3/67A
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SC19379 |
Standard Recovery Diode, 1kV, 1A, Single, 1.2V, 2us, 30A VISHAY The GF1M-E3/5CA from Vishay is an single configured surface mount glass passivated rectifier in DO-214BA package. It features low forward voltage drop, low leakage current, high forward surge capability. Applicable at general purpose rectification of power...
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- | - | - | - | - | - | - | - | - | 2Pins | 175°C | SUPERECTIFIER Series | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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P600MG
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SC18687 |
Standard Recovery Rectifier Diode, 1kV, 6A, 1.1V, 250A MULTICOMP PRO The P600MG from Multicomp Pro is a standard recovery / rectifier diode designed for general purpose and low power applications. • Low cost • Low reverse leakage current • Low forward voltage drop • High surge capacity • Meet UL flammability classification ...
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- | - | - | - | - | - | - | - | - | 2Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SQ2362ES-T1_GE3
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SC19375 |
Power MOSFET, N Channel, 60V, 4.3A, 0.125 Ohm, SOT-23, SMD VISHAY • TrenchFET® power MOSFET • 100% Rg and UIS tested
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N Channel | 60V | 4.3A | 0.125ohm | SOT-23 | Surface Mount | 10V | 2V | 3.3W | 3Pins | 175°C | TrenchFET | AEC-Q101 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BAR43CFILM
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SC19289 |
Small Signal Schottky Diode, Dual Common Cathode, 30V, 100mA, 330mV, 750mA, 150 Degrees C STMICROELECTRONICS The BAR43CFILM is a general purpose metal to silicon Small Signal Schottky Diode featuring very low turn-on voltage, fast switching, negligible switching losses and very small conduction losses. • Low forward voltage drop • Surface mount device • 150?C Ope...
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- | - | - | - | - | - | - | - | - | 3Pins | 150°C | BAR43 Series | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BAT760-7
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SC19119 |
Schottky Rectifier, 30 V, 1 A, Single, SOD-323, 2 Pins, 550 mV DIODES INC. The BAT760-7 is a surface-mount Schottky Barrier Rectifier with moulded plastic case and solderable matte tin-finish annealed over alloy 42 lead frame terminals as per MIL-STD-202 standard. • Very low forward-voltage drop • Guard-ring construction for tran...
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- | - | - | - | - | - | - | - | - | 2Pins | 125°C | BAT760 | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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1N5404RL
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SC14891 |
Standard Recovery Diode, 400V, 3 A, ONSEMI The 1N5404RL is a standard Recovery Rectifier with moulded epoxy case. It has solderable axial leads. It is suitable for use in power supplies and other applications. • Cathode is indicated by polarity band • High current to small size • High surge current...
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- | - | - | - | - | - | - | - | - | 2Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MB6S-E3/45
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SC17440 |
Bridge Rectifier Diode, Single Phase, 600V, 500mA, TO-269AA, 1V, 4 Pins VISHAY The MB6S-E3/45 is a miniature glass passivated surface mount Bridge Rectifier. • Fast Recovery • Saves Space on Printed Circuit Boards • High Surge Current Capability • Matte Tin-plated Leads
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1+ €0.5831 (€0.72) 10+ €0.4403 (€0.54) 100+ €0.3094 (€0.38) |
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- | - | - | - | - | - | - | - | - | 4Pins | 150°C | MB6S | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MBR360G
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SC17643 |
Schottky Rectifier, 60 V, 3 A, Single, Axial Leaded, 2 Pins, 740 mV ONSEMI The MBR360G is an axial-leaded Schottky Barrier Rectifier with an epoxy molded case, all external surfaces corrosion-resistant and terminal lead is readily solderable finish. This device employs the Schottky barrier principle in a large area metal-to-silic...
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- | - | - | - | - | - | - | - | - | 2Pins | 150°C | MBR36 | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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STPS0520Z
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SC17520 |
Schottky Rectifier, 20 V, 500 mA, Single, SOD-123, 2 Pins, 320 mV STMICROELECTRONICS The STPS0520Z is a single Schottky Rectifier suitable for switch mode power supplies and high frequency DC to DC converters. This device is intended for use in low voltage, high frequency inverters, free-wheeling and polarity protection applications. Due t...
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- | - | - | - | - | - | - | - | - | 2Pins | 125°C | STPS0 | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRF510PBF
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SC15755 |
Power MOSFET, N Channel, 100V, 5.6A, 0.54 Ohm, TO-220AB VISHAY The IRF510PBF is a third generation N-channel Power MOSFET is designed with the combination of fast switching, low on-resistance and cost effectiveness. • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Fast Switching • Ease of Paralleling • Simple Dri...
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N Channel | 100V | 5.6A | 0.54ohm | TO-220AB | Through Hole | 10V | 4V | 43W | 3Pins | 175°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BSS308PEH6327XTSA1
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SC16736 |
Power MOSFET, P Channel, 30 V, 2 A, 0.062 ohm, SOT-23, Surface Mount INFINEON The BSS308PE H6327 is an OptiMOS™ P3 P-channel Small Signal Transistor with enhancement mode and logic level (4.5V rated). • ±20V Gate-source voltage • 260°C Soldering temperature • AEC-Q101 Qualified • ESD protection
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P Channel | 30V | 2A | 0.062ohm | SOT-23 | Surface Mount | 10V | 1.5V | 500mW | 3Pins | 150°C | - | AEC-Q101 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRFP260NPBF
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SC16898 |
N Channel Power MOSFET, HEXFET, 200V, 50A, 0.04 Ohm, TO 247AC INFINEON The IRFP260NPBF is 200V single N channel HEXFET power MOSFET in TO-247AC package. This MOSFET features extremely low on resistance per silicon area, dynamic dv/dt rating, ease of Paralleling, rugged, fast switching, simple drive requirements and fully aval...
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N Channel | 200V | 50A | 0.04ohm | TO-247AC | Through Hole | 10V | 4V | 300W | 3Pins | 175°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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NTR4171PT1G
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SC16782 |
Power MOSFET, P Channel, 30 V, 3.5 A, 0.05 ohm, SOT-23, Surface Mount ONSEMI The NTR4171PT1G is a P-channel Power MOSFET offers -30V drain source voltage and -2.2A continuous drain current. It is suitable for load switch, optimized for battery and load management applications in portable equipment like cell phones, PDA's and media ...
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P Channel | 30V | 3.5A | 0.05ohm | SOT-23 | Surface Mount | 10V | 1.15V | 1.25W | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BD243C
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SC15745 |
Bipolar (BJT) Single Transistor, NPN, 100V, 6A, 65W, TO-220 MULTICOMP PRO The BD243C is a NPN plastic high power Bipolar Transistor, used for general purpose amplifier and switching applications. • 1.92°C/W Junction to Case Thermal Resistance • Multicomp Pro products are rated 4.6 out of 5 stars • 12 month limited warranty *view...
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- | - | - | - | TO-220 | Through Hole | - | - | 65W | 3Pins | 150°C | Multicomp Pro Bipolar NPN Transistors | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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FDV304P
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SC16761 |
Power MOSFET, P Channel, 25 V, 460 mA, 1.22 ohm, SOT-23, Surface Mount ONSEMI The FDV303P is a surface mount, P channel logic level enhancement mode digital FET in SOT-23 package. This device features high cell density, DMOS technology which has been tailored to minimize the onstate resistance and maintain low gate drive conditions....
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P Channel | 25V | 460mA | 1.22ohm | SOT-23 | Surface Mount | 2.7V | 860mV | 350mW | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BF256B
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SC15912 |
JFET Transistor, JFET, -30V, 6mA, 13mA, -8 V, TO-92 ONSEMI The BF256B is a N-channel JFET Transistor for RF/VHF/UHF amplifiers. • 350mW Power Dissipation
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N Channel | - | - | - | TO-92 | Through Hole | - | - | - | - | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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VP3203N3-G
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SC16929 |
Power MOSFET, Enhanced-Mode, P Channel, 30 V, 650 mA, 0.6 ohm, TO-92, Through Hole MICROCHIP This low threshold, enhancement-mode (normally-off) transistor utilises a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors...
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P Channel | 30V | 650mA | 0.6ohm | TO-92 | Through Hole | 10V | 3.5V | 740mW | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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1N914
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SC08157 |
Small Signal Diode, Single, 100 V, 200 mA, 1 V, 4 ns, 4 A ONSEMI The 1N914 is an axial leaded small signal diode. This diode features unidirectional configuration. • Forward surge current of 4A at pulse width 1μs and 1A at pulse width 1s • Maximum repetitive reverse voltage of 100V • Power dissipation is 500mW • Operati...
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- | - | - | - | - | - | - | - | - | 2Pins | 175°C | 1N91x Series | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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J111
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SC12586 |
JFET Transistor, TO-92, 150 °C ONSEMI The J111 is a N-channel Switch feature source and drain are interchangeable. This device is designed for low level analogue switching, sample and hold circuits and chopper stabilized amplifiers. • 50mA Forward gate current • 625mW Total device dissipation
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N Channel | - | - | - | TO-92 | Through Hole | - | - | - | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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J112
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SC05830 |
JFET Transistor, -35 V, -5 V, TO-92, 3 Pin, 150 °C ONSEMI J112 is a through hole, N channel switch in TO-92 package. This device is designed for low level analogue switching, sample and hold circuits and chopper stabilized amplifiers. • Source and drain are interchangeable • Gate to source breakdown voltage of 35...
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N Channel | - | - | - | TO-92 | Through Hole | - | - | - | - | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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TIP42A
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SC06766 |
Transistor, PNP, TO220 MULTICOMP PRO The TIP42A is a PNP Power Transistor designed for use in general purpose power amplifier and switching applications. • 3MHz Minimum current gain-bandwidth product fT @ IC = 500mA • -65 to 150°C Operating junction temperature range • Multicomp Pro products ...
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- | - | - | - | TO-220 | Through Hole | - | - | 65W | 3Pins | 150°C | - | - |