Semiconductors - Discretes

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Transistor Polarity Collector Emitter Voltage Max Continuous Collector Current Power Dissipation Transistor Case Style Transistor Mounting No. of Pins Transition Frequency DC Current Gain hFE Min Operating Temperature Max Product Range Qualification
 
 
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BC847B
BC847B - Bipolar (BJT) Single Transistor, NPN, 45 V, 100 mA, 250 mW, SOT-23, Surface Mount

SC19196

Bipolar (BJT) Single Transistor, NPN, 45 V, 100 mA, 250 mW, SOT-23, Surface Mount

MULTICOMP PRO

The BC847B is a NPN surface mount silicon planar Epitaxial Transistor. Collector emitter voltage at 45V and power dissipation at 250mW. • 500k/W Junction-to-ambient thermal resistance • Multicomp Pro products are rated 4.6 out of 5 stars • 12 month limited...

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NPN 45V 100mA 250mW SOT-23 Surface Mount 3Pins 100MHz 125hFE 150°C Multicomp Pro Bipolar Transistors NPN -
SQ2362ES-T1_GE3
SQ2362ES-T1_GE3 - Power MOSFET, N Channel, 60V, 4.3A, 0.125 Ohm, SOT-23, SMD

SC19375

Power MOSFET, N Channel, 60V, 4.3A, 0.125 Ohm, SOT-23, SMD

VISHAY

• TrenchFET® power MOSFET • 100% Rg and UIS tested

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- - - 3.3W SOT-23 Surface Mount 3Pins - - 175°C TrenchFET AEC-Q101
GF1M-E3/67A
GF1M-E3/67A - Standard Recovery Diode, 1kV, 1A, Single, 1.2V, 2us, 30A

SC19379

Standard Recovery Diode, 1kV, 1A, Single, 1.2V, 2us, 30A

VISHAY

The GF1M-E3/5CA from Vishay is an single configured surface mount glass passivated rectifier in DO-214BA package. It features low forward voltage drop, low leakage current, high forward surge capability. Applicable at general purpose rectification of power...

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- - - - - - 2Pins - - 175°C SUPERECTIFIER Series -
BAT6404E6327HTSA1
BAT6404E6327HTSA1 - Small Signal Schottky Diode, Single Pair Series, 40V, 120mA, 750mV, 800mA, 150 °C

SC19132

Small Signal Schottky Diode, Single Pair Series, 40V, 120mA, 750mV, 800mA, 150 °C

INFINEON

Silicon Schottky diode for low-loss, fast-recovery, meter protection, bias isolation and clamping application. • Qualified according AEC Q101 • Integrated diffused guard ring • Low forward voltage • Series pin configuration

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- - - - - - 3Pins - - 150°C BAT64 AEC-Q101
BZX84C10LT1G
BZX84C10LT1G - Zener Single Diode, Voltage Regulator, 10V, 225mW, SOT-23, 6%, 3 Pins, 150°C

SC19253

Zener Single Diode, Voltage Regulator, 10V, 225mW, SOT-23, 6%, 3 Pins, 150°C

ONSEMI

The BZX84CxxxLT1G series surface mount Zener Diode designed to provide voltage regulation with minimum space requirement. They are well suited for applications such as cellular phones, hand held portables and high density PC boards. • 225mW Rating on FR-4 ...

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- - - 225mW - - 3Pins - - 150°C BZX84CxxxLT1G AEC-Q101
BSH103,215
BSH103,215 - Power MOSFET, N Channel, 30V, 850mA, 0.4 Ohm, TO-236AB, SMD

SC19198

Power MOSFET, N Channel, 30V, 850mA, 0.4 Ohm, TO-236AB, SMD

NEXPERIA

The BSH103 from NXP is a surface mount, N channel enhancement mode MOS transistor in SOT-23 package using TrenchMOS technology. This transistor features very low threshold, high speed switching, no secondary breakdown and direct interface to CMOS, TTL. BSH...

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- - - 750mW TO-236AB Surface Mount 3Pins - - 150°C - -
1N5404RL
1N5404RL - Standard Recovery Diode, 400 V, 3 A, Single, 1 V, 200 A

SC14891

Standard Recovery Diode, 400 V, 3 A, Single, 1 V, 200 A

ONSEMI

The 1N5404RL is a standard Recovery Rectifier with moulded epoxy case. It has solderable axial leads. It is suitable for use in power supplies and other applications. • Cathode is indicated by polarity band • High current to small size • High surge current...

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- - - - - - 2Pins - - 150°C - -
MB6S-E3/45
MB6S-E3/45 - Bridge Rectifier, Single Phase, 600 V, 500 mA, TO-269AA, 4 Pins, 1 V

SC17440

Bridge Rectifier, Single Phase, 600 V, 500 mA, TO-269AA, 4 Pins, 1 V

VISHAY

The MB6S-E3/45 is a miniature glass passivated surface mount Bridge Rectifier. • Fast Recovery • Saves Space on Printed Circuit Boards • High Surge Current Capability • Matte Tin-plated Leads

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- - - - - - 4Pins - - 150°C MB6S -
SPW20N60C3FKSA1
SPW20N60C3FKSA1 - Power MOSFET, N Channel, 650 V, 20.7 A, 0.19 ohm, TO-247, Through Hole

SC16942

Power MOSFET, N Channel, 650 V, 20.7 A, 0.19 ohm, TO-247, Through Hole

INFINEON

The SPW20N60C3 is a Cool MOS™ Power Transistor with ultra low gate charge, new revolutionary high voltage technology, periodic avalanche rated, extremely dv/dt rated and qualified according to JEDEC for target applications. • High peak current capability •...

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- - - 208W TO-247 Through Hole 3Pins - - 150°C - -
VP3203N3-G
VP3203N3-G - Power MOSFET, Enhanced-Mode, P Channel, 30 V, 650 mA, 0.6 ohm, TO-92, Through Hole

SC16929

Power MOSFET, Enhanced-Mode, P Channel, 30 V, 650 mA, 0.6 ohm, TO-92, Through Hole

MICROCHIP

This low threshold, enhancement-mode (normally-off) transistor utilises a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors...

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- - - 740mW TO-92 Through Hole 3Pins - - 150°C - -
BF256B
BF256B - JFET Transistor, JFET, -30 V, 13 mA, -8 V, TO-92, 3 Pin, 150 °C

SC15912

JFET Transistor, JFET, -30 V, 13 mA, -8 V, TO-92, 3 Pin, 150 °C

ONSEMI

The BF256B is a N-channel JFET Transistor for RF/VHF/UHF amplifiers. • 350mW Power Dissipation

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- - - - TO-92 Through Hole - - - 150°C - -
MBR360G
MBR360G - Schottky Rectifier, 60 V, 3 A, Single, Axial Leaded, 2 Pins, 740 mV

SC17643

Schottky Rectifier, 60 V, 3 A, Single, Axial Leaded, 2 Pins, 740 mV

ONSEMI

The MBR360G is an axial-leaded Schottky Barrier Rectifier with an epoxy molded case, all external surfaces corrosion-resistant and terminal lead is readily solderable finish. This device employs the Schottky barrier principle in a large area metal-to-silic...

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- - - - - - 2Pins - - 150°C MBR36 -
STPS0520Z
STPS0520Z - Schottky Rectifier, 20 V, 500 mA, Single, SOD-123, 2 Pins, 320 mV

SC17520

Schottky Rectifier, 20 V, 500 mA, Single, SOD-123, 2 Pins, 320 mV

STMICROELECTRONICS

The STPS0520Z is a single Schottky Rectifier suitable for switch mode power supplies and high frequency DC to DC converters. This device is intended for use in low voltage, high frequency inverters, free-wheeling and polarity protection applications. Due t...

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- - - - - - 2Pins - - 125°C STPS0 -
IRF510PBF
IRF510PBF - Power MOSFET, N Channel, 100 V, 5.6 A, 0.54 ohm, TO-220AB, Through Hole

SC15755

Power MOSFET, N Channel, 100 V, 5.6 A, 0.54 ohm, TO-220AB, Through Hole

VISHAY

The IRF510PBF is a third generation N-channel Power MOSFET is designed with the combination of fast switching, low on-resistance and cost effectiveness. • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Fast Switching • Ease of Paralleling • Simple Dri...

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- - - 43W TO-220AB Through Hole 3Pins - - 175°C - -
IRFP260NPBF
IRFP260NPBF - Power MOSFET, N Channel, 200 V, 50 A, 0.04 ohm, TO-247AC, Through Hole

SC16898

Power MOSFET, N Channel, 200 V, 50 A, 0.04 ohm, TO-247AC, Through Hole

INFINEON

The IRFP260NPBF is 200V single N channel HEXFET power MOSFET in TO-247AC package. This MOSFET features extremely low on resistance per silicon area, dynamic dv/dt rating, ease of Paralleling, rugged, fast switching, simple drive requirements and fully aval...

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- - - 300W TO-247AC Through Hole 3Pins - - 175°C HEXFET Series -
NTR4171PT1G
NTR4171PT1G - Power MOSFET, P Channel, 30 V, 3.5 A, 0.075 ohm, SOT-23, Surface Mount

SC16782

Power MOSFET, P Channel, 30 V, 3.5 A, 0.075 ohm, SOT-23, Surface Mount

ONSEMI

The NTR4171PT1G is a P-channel Power MOSFET offers -30V drain source voltage and -2.2A continuous drain current. It is suitable for load switch, optimized for battery and load management applications in portable equipment like cell phones, PDA's and media ...

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- - - 1.25W SOT-23 Surface Mount 3Pins - - 150°C - -
BD243C
BD243C - Bipolar (BJT) Single Transistor, NPN, 100V, 6A, 65W, TO-220

SC15745

Bipolar (BJT) Single Transistor, NPN, 100V, 6A, 65W, TO-220

MULTICOMP PRO

The BD243C is a NPN plastic high power Bipolar Transistor, used for general purpose amplifier and switching applications. • 1.92°C/W Junction to Case Thermal Resistance • Multicomp Pro products are rated 4.6 out of 5 stars • 12 month limited warranty *view...

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NPN 100V 6A 65W TO-220 Through Hole 3Pins 3MHz 15hFE 150°C Multicomp Pro Bipolar NPN Transistors -
BSS308PEH6327XTSA1
BSS308PEH6327XTSA1 - Power MOSFET, P Channel, 30 V, 2 A, 0.08 ohm, SOT-23, Surface Mount

SC16736

Power MOSFET, P Channel, 30 V, 2 A, 0.08 ohm, SOT-23, Surface Mount

INFINEON

The BSS308PE H6327 is an OptiMOS™ P3 P-channel Small Signal Transistor with enhancement mode and logic level (4.5V rated). • ±20V Gate-source voltage • 260°C Soldering temperature • AEC-Q101 Qualified • ESD protection

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- - - 500mW SOT-23 Surface Mount 3Pins - - 150°C - AEC-Q101
FDV304P
FDV304P - Power MOSFET, P Channel, 25 V, 460 mA, 1.1 ohm, SOT-23, Surface Mount

SC16761

Power MOSFET, P Channel, 25 V, 460 mA, 1.1 ohm, SOT-23, Surface Mount

ONSEMI

The FDV303P is a surface mount, P channel logic level enhancement mode digital FET in SOT-23 package. This device features high cell density, DMOS technology which has been tailored to minimize the onstate resistance and maintain low gate drive conditions....

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- - - 350mW SOT-23 Surface Mount 3Pins - - 150°C - -
IRF520NPBF
IRF520NPBF - Power MOSFET, N Channel, 100 V, 9.7 A, 0.2 ohm, TO-220AB, Through Hole

SC08214

Power MOSFET, N Channel, 100 V, 9.7 A, 0.2 ohm, TO-220AB, Through Hole

INFINEON

The IRF520NPBF is a N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known ...

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- - - 47W - Through Hole 3Pins - - 175°C - -
1N914
1N914 - Small Signal Diode, Single, 100 V, 200 mA, 1 V, 4 ns, 4 A

SC08157

Small Signal Diode, Single, 100 V, 200 mA, 1 V, 4 ns, 4 A

ONSEMI

The 1N914 is an axial leaded small signal diode. This diode features unidirectional configuration. • Forward surge current of 4A at pulse width 1μs and 1A at pulse width 1s • Maximum repetitive reverse voltage of 100V • Power dissipation is 500mW • Operati...

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- - - - - - 2Pins - - 175°C 1N91x Series -
J111
J111 - JFET Transistor, 35 V, 20 mA, TO-92, 3 Pin, 150 °C

SC12586

JFET Transistor, 35 V, 20 mA, TO-92, 3 Pin, 150 °C

ONSEMI

The J111 is a N-channel Switch feature source and drain are interchangeable. This device is designed for low level analogue switching, sample and hold circuits and chopper stabilized amplifiers. • 50mA Forward gate current • 625mW Total device dissipation

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- - - - TO-92 Through Hole 3Pins - - 150°C - -
J112
J112 - JFET Transistor, -35 V, -5 V, TO-92, 3 Pin, 150 °C

SC05830

JFET Transistor, -35 V, -5 V, TO-92, 3 Pin, 150 °C

ONSEMI

J112 is a through hole, N channel switch in TO-92 package. This device is designed for low level analogue switching, sample and hold circuits and chopper stabilized amplifiers. • Source and drain are interchangeable • Gate to source breakdown voltage of 35...

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- - - - TO-92 Through Hole - - - 150°C - -
STD30NF06LT4
STD30NF06LT4 - Power MOSFET, N Channel, 60 V, 35 A, 0.028 ohm, TO-252 (DPAK), Surface Mount

SC16912

Power MOSFET, N Channel, 60 V, 35 A, 0.028 ohm, TO-252 (DPAK), Surface Mount

STMICROELECTRONICS

The STD30NF06LT4 is a N-channel STripFET™II Power MOSFET with single feature size strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps a...

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- - - 70W TO-252 (DPAK) Surface Mount 3Pins - - 175°C - -
ZVP3306F
ZVP3306F - Power MOSFET, P Channel, 60 V, 90 mA, 14 ohm, SOT-23, Surface Mount

SC16881

Power MOSFET, P Channel, 60 V, 90 mA, 14 ohm, SOT-23, Surface Mount

DIODES INC.

The ZVP3306F is a -60V E-Line P-channel Enhancement Mode Vertical DMOS FET with 14Ω resistance and 330mW power dissipation.

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- - - 330mW SOT-23 Surface Mount 3Pins - - 150°C - -