Semiconductors - Discretes

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BAV199LT1G
BAV199LT1G - Dual Switching Small Signal Diode, 70V, 215mA, 1.25V, 3us, 500mA

SC17732

Dual Switching Small Signal Diode, 70V, 215mA, 1.25V, 3us, 500mA

ONSEMI

• Medium speed switching times • AEC-Q101 qualified and PPAP capable • Pb-free, halogen free/BFR free

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- 3Pins
CSD18504Q5A
CSD18504Q5A - SMD Power MOSFET N Channel NexFET Transistor, 40V, 50A,

SC16683

SMD Power MOSFET N Channel NexFET Transistor, 40V, 50A,

TEXAS INSTRUMENTS

The CSD18504Q5A is a NexFET™ N-channel Power MOSFET designed to minimize losses in power conversion applications. It is suitable for use in DC-to-DC conversion, secondary side synchronous rectifier and battery motor control applications. • Ultra-low Qg and...

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77W 8Pins
BT152-800R,127
BT152-800R,127 - Thyristor, 800V, 32mA, 13A, 20A, TO-220AB, 3 Pins

SC17046

Thyristor, 800V, 32mA, 13A, 20A, TO-220AB, 3 Pins

WEEN SEMICONDUCTORS

The BT152-800R,127 is a planar passivated silicon controlled rectifier in a 3 pin TO-220AB package. It is intended for use in applications requiring very high inrush current capability and high thermal cycling performance. Typical applications include igni...

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- 3Pins
BC846BLT1G.
BC846BLT1G. - Bipolar (BJT) Single Transistor, General Purpose, NPN, 65V, 100mA, 300mW, SOT-23, SMD

SC16025

Bipolar (BJT) Single Transistor, General Purpose, NPN, 65V, 100mA, 300mW, SOT-23, SMD

ONSEMI

The BC846BLT1G is a NPN silicon general purpose Bipolar Transistor, designed for use in linear and switching applications. Ideal for lower power surface mount applications. • Inductive load protection • Steering logic • Polarity reversal protection • ESD r...

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300mW 3Pins
BAV70LT1G
BAV70LT1G - Small Signal Switching Diode, Dual Common Cathode, 70V, 200mA, 1.25V, 6ns, 500mA

SC17733

Small Signal Switching Diode, Dual Common Cathode, 70V, 200mA, 1.25V, 6ns, 500mA

ONSEMI

• Extremely fast switching speed • Halogen-free

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HUF75344G3
HUF75344G3 - Power MOSFET, N Channel, 55 V, 75 A, 0.008 ohm, TO-247, Through Hole

SC16989

Power MOSFET, N Channel, 55 V, 75 A, 0.008 ohm, TO-247, Through Hole

ONSEMI

The HUF75344G3 is a N-channel UltraFET Power MOSFET. This advanced process technology achieves the lowest possible on resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mod...

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285W 3Pins
2N7002ET1G
2N7002ET1G - Power MOSFET, N Channel, 60V, 310mA, 0.86 Ohm, SOT-23, SMD

SC15987

Power MOSFET, N Channel, 60V, 310mA, 0.86 Ohm, SOT-23, SMD

ONSEMI

The 2N7002ET1G is a N-channel small signal MOSFET in Trench technology and low drain to source voltage. Suitable for low side load switch and level shift circuits. • 1.2A Pulsed drain current • ±20V Gate-source voltage • Halogen-free

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420mW 3Pins
BZX84-B5V6,215
BZX84-B5V6,215 - Zener Single Diode, 5.6 V, 250 mW, SOT-23, 3 Pins, 150 °C, Surface Mount

SC17882

Zener Single Diode, 5.6 V, 250 mW, SOT-23, 3 Pins, 150 °C, Surface Mount

NEXPERIA

The BZX84 series low-power voltage regulator Zener Diode encapsulated in a small SOT23 (TO-236AB) plastic surface-mounted device (SMD) package. It is suitable for general regulation functions. • ±1%, ±2% and ±5% Three tolerance series • 2.4 to 75V (E24 ran...

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250mW 3Pins
BZX84C4V7LT1G
BZX84C4V7LT1G - Zener Single Diode, 4.7 V, 225 mW, SOT-23, 3 Pins, 150 °C, Surface Mount

SC17942

Zener Single Diode, 4.7 V, 225 mW, SOT-23, 3 Pins, 150 °C, Surface Mount

ONSEMI

The BZX84CxxxLT1G series surface mount Zener Diode designed to provide voltage regulation with minimum space requirement. They are well suited for applications such as cellular phones, hand held portables and high density PC boards. • 225mW Rating on FR-4 ...

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225mW 3Pins
BZX384-C15,115
BZX384-C15,115 - Zener Single Diode, 15 V, 300 mW, SOD-323, 2 Pins, 150 °C, Surface Mount

SC18017

Zener Single Diode, 15 V, 300 mW, SOD-323, 2 Pins, 150 °C, Surface Mount

NEXPERIA

The BZX384 series low-power voltage regulator Zener Diode encapsulated in a very small SOD323 (SC-76) plastic surface-mounted device (SMD) package. It is suitable for general regulation functions. • ±2% and ±5% Two tolerance series • 2.4 to 75V (E24 range)...

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300mW 2Pins
MBRS140T3G
MBRS140T3G - Schottky Rectifier, 40 V, 1 A, Single, DO-214AA (SMB), 2 Pins, 600 mV

SC17694

Schottky Rectifier, 40 V, 1 A, Single, DO-214AA (SMB), 2 Pins, 600 mV

ONSEMI

The MBRS140T3G from On Semiconductor is surface mount "J" bent leaded schottky power rectifier in SMB (CASE 403A-03 ) package. It features epitaxial construction with highly stable oxide passivated junction and metal contact. This device is intended for us...

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- 2Pins
MB2S
MB2S - Bridge Rectifier Diode, Single Phase, 200V, 500mA, SOIC, 1V, 4 Pins

SC17424

Bridge Rectifier Diode, Single Phase, 200V, 500mA, SOIC, 1V, 4 Pins

ONSEMI

The MB2S is a 4-pin single-phase Bridge Rectifier Diode achieves high surge current absorption within a very small foot print. It shines in surge capability within its small 35mm² form-factor. In order to absorb high surge currents, the design supports a 3...

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US1M-E3/61T
US1M-E3/61T - Fast / Ultrafast Diode, 1kV, 1A, Single, 1.7V, 75ns, 30A

SC17871

Fast / Ultrafast Diode, 1kV, 1A, Single, 1.7V, 75ns, 30A

VISHAY

The US1M-E3/5AT series from Vishay are surface mount Ultra fast rectifier in SMA (DO-214AC) package. The device features glass passivated chip junction, ultrafast reverse recovery time, low switching losses, high efficiency and high forward surge capabilit...

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MM3Z5V1T1G
MM3Z5V1T1G - Voltage Regulator Zener Single Diode, 5.1V, 300mW, SOD-323

SC17926

Voltage Regulator Zener Single Diode, 5.1V, 300mW, SOD-323

ONSEMI

The MM3ZxxxT1G series surface mount Voltage Regulator Zener Diode designed to provide voltage regulation protection and especially attractive in situations where space is at a premium. They are well suited for applications such as cellular phones, hand hel...

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300mW 2Pins
1N5819-E3/54
1N5819-E3/54 - Schottky Rectifier, 40V, 1A, DO-41 (DO-204AL), 600mV

SC19962

Schottky Rectifier, 40V, 1A, DO-41 (DO-204AL), 600mV

VISHAY

The 1N5819-E3/54 is a Schottky Barrier Plastic Rectifier with solderable matte tin-plated terminals. It is suitable for use in low-voltage high-frequency inverters, free-wheeling, DC/DC converters and polarity protection applications. • Colour band denotes...

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- 2Pins
BC807-40LT1G
BC807-40LT1G - Bipolar (BJT) Single Transistor, PNP, 45V, 500mA, 300mW, SOT-23, SMD

SC19261

Bipolar (BJT) Single Transistor, PNP, 45V, 500mA, 300mW, SOT-23, SMD

ONSEMI

The BC807-40LT1G is a PNP Bipolar Transistor designed for use in linear and switching applications. The device is housed in a surface-mount package. It offers ESD protection, polarity reversal protection, data line protection, inductive load protection and...

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300mW 3Pins
IPP80P03P4L04AKSA2
IPP80P03P4L04AKSA2 - Power Mosfet Transistor, P Channel, 30V, 80A, TO-220

SC20575

Power Mosfet Transistor, P Channel, 30V, 80A, TO-220

INFINEON

• P-channel - Logic Level - Enhancement mode • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green package (RoHS compliant) • 100% Avalanche tested • Intended for reverse battery protection

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137W 3Pins
2N6058
2N6058 - Silicon Darlingtion Complimentary Power Transistor, NPN, 80V, 12A, TO-3

SC20273

Silicon Darlingtion Complimentary Power Transistor, NPN, 80V, 12A, TO-3

MULTICOMP PRO

• No. of Pins : 2Pins

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BU323ZG
BU323ZG - Darlington Transistor, SOT93

SC06875

Darlington Transistor, SOT93

ONSEMI

The BU323ZG is a 350V Silicon NPN Bipolar Darlington Power Transistor with a built-in active Zener clamping circuit. The transistor is specifically designed for unclamped, inductive applications such as electronic ignition, switching regulators and motor c...

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IRFB4710PBF
IRFB4710PBF - Power MOSFET, N Channel, 100 V, 75 A, 0.014 ohm, TO-220AB, Through Hole

SC11091

Power MOSFET, N Channel, 100 V, 75 A, 0.014 ohm, TO-220AB, Through Hole

INFINEON

The IRFB4710PBF is a HEXFET® single N-channel Power MOSFET offers low gate-to-drain charge to reduce switching losses. It is suitable for high frequency DC-to-DC converters. • Fully characterized capacitance including effective COSS to simplify design • Fu...

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200W 3Pins
FQP30N06
FQP30N06 - Power MOSFET, N Channel, 60 V, 30 A, 0.04 ohm, TO-220AB, Through Hole

SC16931

Power MOSFET, N Channel, 60 V, 30 A, 0.04 ohm, TO-220AB, Through Hole

ONSEMI

The FQP30N06 is a 60V N-channel QFET® enhancement mode Power MOSFET is produced using planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance and to provide superior switching performanc...

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79W 3Pins
2N2647
2N2647 - Unijunction Transistor, 2A, 1µA, 10mA, TO-18

SC15370

Unijunction Transistor, 2A, 1µA, 10mA, TO-18

MULTICOMP PRO

The 2N2647 is a Silicon PN Unijunction Transistor designed for use in pulse and timing circuits, sensing circuits as well thyristor trigger circuits. • Low peak point current • Low emitter reverse current • Passivated surface for reliability and uniformity...

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