Semiconductors - Discretes
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Manufacturer Part No | Order Code | Description / Manufacturer | Availability | Price For |
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Quantity | Power Dissipation | No. of Pins | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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2N7000
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SC06951 |
Power MOSFET, N Channel, 60 V, 200 mA, 5 ohm, TO-92, Through Hole ONSEMI The 2N7000 is a N-channel enhancement mode Field Effect Transistor is produced using high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance while provide rugged, reliable and fast switching perf...
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5+ €0.2457 (€0.30) 25+ €0.2106 (€0.26) 100+ €0.1755 (€0.22) |
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400mW | 3Pins | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
NDS355AN
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SC06991 |
Power MOSFET, N Channel, 30 V, 1.7 A, 0.085 ohm, SOT-23, Surface Mount ONSEMI The NDS355AN is a SuperSOT™-3 N-channel logic level enhancement-mode Power FET produced using high cell density DMOS technology. This very high density process is especially tailored to minimize ON-state resistance. It is particularly suited for low voltag...
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5+ €0.2106 (€0.26) 25+ €0.1638 (€0.20) |
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500mW | 3Pins | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BAT754A
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SC11306 |
Small Signal Schottky Diode, Dual Common Anode, 30 V, 200 mA, 260 mV, 600 mA, 125 °C NXP The BAT754 series planar Schottky Barrier Diode with an integrated guard ring for stress protection, encapsulated in a small SOT23 (TO-236AB) surface-mounted device (SMD) plastic package. It is used for ultra high-speed switching, voltage clamping, line te...
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5+ €0.0819 (€0.10) 25+ €0.0702 (€0.09) 100+ €0.0585 (€0.07) |
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- | 3Pins | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TIP141
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SC06870 |
Darlington Transistor, TO247 MULTICOMP PRO The TIP141 is a Darlington Transistor, designed for use in general-purpose amplifier and low speed switching applications. Collector-emitter sustaining voltage at 80V and power dissipation at 125W. • Monolithic construction with built-in base-emitter shunt...
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1+ €1.6731 (€2.06) 10+ €1.5444 (€1.90) 100+ €1.404 (€1.73) 500+ €1.2519 (€1.54) |
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- | 3Pins | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BC461
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SC13213 |
Transistor, BC461, PNP, TO39 MULTICOMP PRO The BC461 is a -60V Silicon PNP Planar Epitaxial Medium Power Transistor ideal for low frequency devices typically with current ratings 2A. • High performance • Collector-base voltage(Vcbo = 350V) • Emitter-base voltage(Vebo = 6V) • Multicomp Pro products ...
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1+ €0.9126 (€1.12) 10+ €0.819 (€1.01) 100+ €0.7605 (€0.94) |
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1W | 3Pins | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC182L
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SC12579 |
Transistor, NPN, TO92 MULTICOMP PRO The BC182L is a NPN Silicon planar Epitaxial Transistor for amplifiers. • 375°C/W Junction to Ambient Thermal Resistance • Multicomp Pro products are rated 4.6 out of 5 stars • 12 month limited warranty *view Terms & Conditions for details • 96% of custome...
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5+ €0.1053 (€0.13) 25+ €0.0819 (€0.10) 100+ €0.0585 (€0.07) 1000+ €0.0468 (€0.06) |
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350mW | 3Pins | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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ZVP2110A
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SC06974 |
Power MOSFET, P Channel, 100 V, 230 mA, 8 ohm, TO-226AA, Through Hole DIODES INC. The ZVP2110A is a -100V E-Line P-channel Enhancement Mode Vertical DMOS FET with 8Ω resistance and 700mW power dissipation.
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5+ €0.936 (€1.15) 25+ €0.7839 (€0.96) 100+ €0.6669 (€0.82) |
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700mW | 3Pins | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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ULN2803A
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SC08607 |
Darlington Array 8 NPN, 2803, DIP18 STMICROELECTRONICS The ULN2803A is an eight darlington array in 18 pin DIP package. Array contains eight darlington transistors with common emitters and integral suppression diodes for inductive loads. Each darlington features a peak load current rating of 600mA (500mA conti...
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1+ €2.3166 (€2.85) 10+ €2.0826 (€2.56) |
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- | 18Pins | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BZX79-C2V7.
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SC05689 |
Zener Single Diode, 2.7 V, 500 mW, DO-35, 2 Pins, 200 °C NXP • Power Dissipation : 500mW • No. of Pins : 2Pins
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10+ €0.0468 (€0.06) 50+ €0.0351 (€0.04) |
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500mW | 2Pins | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BCX38C
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SC06835 |
Darlington Transistor, E-Line DIODES INC. The BCX38C is a NPN silicon planar medium-power Darlington Transistor offers 80V collector-base voltage and 800mA continuous collector current. • -55 to 200°C Operating temperature range
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5+ €0.5616 (€0.69) 25+ €0.4914 (€0.60) 100+ €0.4329 (€0.53) |
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- | 3Pins | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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NDS352AP
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SC11034 |
Power MOSFET, P Channel, 30 V, 900 mA, 0.3 ohm, SuperSOT, Surface Mount ONSEMI The NDS352AP is a P-channel Logic Level Enhancement Mode Power Field Effect Transistor produced using high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device is particularly sui...
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5+ €0.2574 (€0.32) 25+ €0.1989 (€0.24) |
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500mW | 3Pins | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BZT03C91-TR
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SC07151 |
Zener Single Diode, 91 V, 3.25 W, SOD-57, 2 Pins, 175 °C, Through Hole VISHAY • BZT03 series zener diode with surge current specification in 2 pin SOD-57 package • Glass passivated junction • Hermetically sealed package • Clamping time in picoseconds • Suitable for medium power voltage regulators and medium power transient suppress...
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5+ €0.468 (€0.58) 25+ €0.4095 (€0.50) |
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3.25W | 2Pins | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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1N5350BG
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SC07177 |
Zener Single Diode, 13 V, 5 W, 017AA, 2 Pins, 200 °C, Through Hole ONSEMI The 1N5333B series Surmetic™ Voltage Regulator Zener Diode with tight limits and better operating characteristics that reflect the superior capabilities of silicon-oxide passivated junctions. All this in an axial lead, transfer-moulded plastic package that...
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5+ €0.2925 (€0.36) 25+ €0.2574 (€0.32) 100+ €0.1989 (€0.24) |
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5W | 2Pins | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MJE13007
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SCMJE13007 |
Bipolar (BJT) Single Transistor, NPN, 400V, 8A, 80W ONSEMI • Power Dissipation : 80W • No. of Pins : 3Pins
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1+ €1.3806 (€1.70) 10+ €1.1583 (€1.42) 100+ €0.9945 (€1.22) |
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80W | 3Pins | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BAT46
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SC07326 |
Small Signal Schottky Diode, Single, 100 V, 150 mA, 450 mV, 750 mA, 125 °C STMICROELECTRONICS The BAT46 is a general purpose metal to silicon Small Signal Schottky Diode featuring high breakdown voltage, low forward voltage drop and low turn-on voltage. This diode is suited for protection and routing operations. • Very low conduction losses • Negli...
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- | 2Pins | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BZX79-C3V9.
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SC05693 |
Zener Single Diode, 3.9 V, 500 mW, DO-35, 2 Pins, 200 °C NXP • Power Dissipation : 500mW • No. of Pins : 2Pins
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500mW | 2Pins | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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GBPC1202-E4/51
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SC07514 |
Bridge Rectifier, Single Phase, 200 V, 12 A, Module, 4 Pins, 1.1 V VISHAY The GBPC1202-E4/51 is a 4-pin single-phase glass passivated Bridge Rectifier Diode with high surge current capability. It is general purpose use in AC/DC bridge full wave rectification for home appliances, office equipment and telecommunication application...
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1+ €4.1067 (€5.05) 10+ €3.6972 (€4.55) |
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- | 4Pins | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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GBPC3504
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SC07524 |
Bridge Rectifier, Single Phase, 400 V, 35 A, Module, 4 Pins, 1.1 V ONSEMI The GBPC3504 is a 35A single-phase glass passivated Bridge Rectifier with integrally moulded heatsink. The bridge rectifier feature solderable terminals as per MIL-STD-202, method 208 standard. This bridge rectifier is general usage and suitable for many d...
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1+ €6.2595 (€7.70) 10+ €5.8032 (€7.14) 100+ €5.5224 (€6.79) |
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- | 4Pins | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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FDN338P
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SC11041 |
Power MOSFET, P Channel, 20 V, 1.6 A, 0.115 ohm, SOT-23, Surface Mount ONSEMI The FDN338P is a 2.5V specified P-channel MOSFET uses advanced low voltage PowerTrench® process. It has been optimized for battery power management and load switch applications. The SuperSOT™ -3 provides low RDS (ON) and 30% higher power handling capabilit...
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5+ €0.3627 (€0.45) 25+ €0.2457 (€0.30) |
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500mW | 3Pins | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BZV85-C30
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SC07101 |
Zener Single Diode, 30 V, 1 W, DO-41 (DO-204AL), 2 Pins, 200 °C NXP The BZV85 series medium-power voltage regulator Zener Diode designed in a small hermetically sealed leaded SOD66 (DO-41) glass package. It is suitable for general regulation functions. • 1.3W Total power dissipation (maximum) • ±5% Tolerance series (approx...
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10+ €0.0702 (€0.09) 100+ €0.0585 (€0.07) 1000+ €0.0468 (€0.06) |
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1W | 2Pins | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MUR460RLG
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SC07381 |
Fast / Ultrafast Diode, 600 V, 4 A, Single, 1.28 V, 75 ns, 70 A ONSEMI The MUR460RLG is a SWITCHMODE™ ultra-fast axial-lead Power Rectifier with moulded epoxy case. This state-of-the-art device is design for use in switching power supplies, inverters and as free-wheeling diodes. • Cathode indicated by polarity band • All exte...
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1+ €0.2691 (€0.33) 10+ €0.234 (€0.29) 100+ €0.2106 (€0.26) |
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SSB44-E3/52T
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SC11414 |
Schottky Rectifier, 40 V, 4 A, Single, DO-214AA (SMB), 2 Pins, 490 mV VISHAY The SSB44-E3/52T is a surface-mount high-current density Schottky Rectifier with solderable matte-tin plated terminals. It is suitable for use in low voltage high frequency inverters, free-wheeling, DC/DC converters and polarity protection applications. • ...
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1+ €0.3276 (€0.40) 100+ €0.2925 (€0.36) 250+ €0.2574 (€0.32) |
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- | 2Pins | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC856
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SC06598 |
Transistor, PNP SOT23 NXP • Power Dissipation : 250mW • No. of Pins : 3Pins
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10+ €0.0234 (€0.03) 100+ €0.0117 (€0.01) |
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250mW | 3Pins | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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ZVN2106G
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SC11051 |
Power MOSFET, N Channel, 60 V, 700 mA, 2 ohm, SOT-223, Surface Mount DIODES INC. The ZVN2106G is a 60V N-channel Enhancement Mode Vertical MOSFET with matte tin plated terminals. The MOSFET is ideal for solenoids/relay driver for automotive and DC-DC converters. • Maximum continuous drain current • AEC-Q101 qualified • UL94V-0 Flammabi...
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2W | 3Pins | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRF740APBF
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SC11085 |
Power MOSFET, N Channel, 400 V, 10 A, 0.55 ohm, TO-220AB, Through Hole VISHAY The IRF740APBF is a 400V N-channel Power MOSFET with low gate charge Qg results in simple drive requirement. It operates at high frequency with hard switching application. Suitable for SMPS and high speed power switching. • Improved gate, avalanche and dyn...
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125W | 3Pins |