Semiconductors - Discretes

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  Manufacturer Part No Order Code Description / Manufacturer
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2N7000
2N7000 - Power MOSFET, N Channel, 60 V, 200 mA, 5 ohm, TO-92, Through Hole

SC06951

Power MOSFET, N Channel, 60 V, 200 mA, 5 ohm, TO-92, Through Hole

ONSEMI

The 2N7000 is a N-channel enhancement mode Field Effect Transistor is produced using high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance while provide rugged, reliable and fast switching perf...

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400mW 3Pins
NDS355AN
NDS355AN - Power MOSFET, N Channel, 30 V, 1.7 A, 0.085 ohm, SOT-23, Surface Mount

SC06991

Power MOSFET, N Channel, 30 V, 1.7 A, 0.085 ohm, SOT-23, Surface Mount

ONSEMI

The NDS355AN is a SuperSOT™-3 N-channel logic level enhancement-mode Power FET produced using high cell density DMOS technology. This very high density process is especially tailored to minimize ON-state resistance. It is particularly suited for low voltag...

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500mW 3Pins
BAT754A
BAT754A - Small Signal Schottky Diode, Dual Common Anode, 30 V, 200 mA, 260 mV, 600 mA, 125 °C

SC11306

Small Signal Schottky Diode, Dual Common Anode, 30 V, 200 mA, 260 mV, 600 mA, 125 °C

NXP

The BAT754 series planar Schottky Barrier Diode with an integrated guard ring for stress protection, encapsulated in a small SOT23 (TO-236AB) surface-mounted device (SMD) plastic package. It is used for ultra high-speed switching, voltage clamping, line te...

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- 3Pins
TIP141
TIP141 - Darlington Transistor, TO247

SC06870

Darlington Transistor, TO247

MULTICOMP PRO

The TIP141 is a Darlington Transistor, designed for use in general-purpose amplifier and low speed switching applications. Collector-emitter sustaining voltage at 80V and power dissipation at 125W. • Monolithic construction with built-in base-emitter shunt...

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- 3Pins
BC461
BC461 - Transistor, BC461, PNP, TO39

SC13213

Transistor, BC461, PNP, TO39

MULTICOMP PRO

The BC461 is a -60V Silicon PNP Planar Epitaxial Medium Power Transistor ideal for low frequency devices typically with current ratings 2A. • High performance • Collector-base voltage(Vcbo = 350V) • Emitter-base voltage(Vebo = 6V) • Multicomp Pro products ...

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1W 3Pins
BC182L
BC182L - Transistor, NPN, TO92

SC12579

Transistor, NPN, TO92

MULTICOMP PRO

The BC182L is a NPN Silicon planar Epitaxial Transistor for amplifiers. • 375°C/W Junction to Ambient Thermal Resistance • Multicomp Pro products are rated 4.6 out of 5 stars • 12 month limited warranty *view Terms & Conditions for details • 96% of custome...

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350mW 3Pins
ZVP2110A
ZVP2110A - Power MOSFET, P Channel, 100 V, 230 mA, 8 ohm, TO-226AA, Through Hole

SC06974

Power MOSFET, P Channel, 100 V, 230 mA, 8 ohm, TO-226AA, Through Hole

DIODES INC.

The ZVP2110A is a -100V E-Line P-channel Enhancement Mode Vertical DMOS FET with 8Ω resistance and 700mW power dissipation.

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700mW 3Pins
ULN2803A
ULN2803A - Darlington Array 8 NPN, 2803, DIP18

SC08607

Darlington Array 8 NPN, 2803, DIP18

STMICROELECTRONICS

The ULN2803A is an eight darlington array in 18 pin DIP package. Array contains eight darlington transistors with common emitters and integral suppression diodes for inductive loads. Each darlington features a peak load current rating of 600mA (500mA conti...

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- 18Pins
BZX79-C2V7.
BZX79-C2V7. - Zener Single Diode, 2.7 V, 500 mW, DO-35, 2 Pins, 200 °C

SC05689

Zener Single Diode, 2.7 V, 500 mW, DO-35, 2 Pins, 200 °C

NXP

• Power Dissipation : 500mW • No. of Pins : 2Pins

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500mW 2Pins
BCX38C
BCX38C - Darlington Transistor, E-Line

SC06835

Darlington Transistor, E-Line

DIODES INC.

The BCX38C is a NPN silicon planar medium-power Darlington Transistor offers 80V collector-base voltage and 800mA continuous collector current. • -55 to 200°C Operating temperature range

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- 3Pins
NDS352AP
NDS352AP - Power MOSFET, P Channel, 30 V, 900 mA, 0.3 ohm, SuperSOT, Surface Mount

SC11034

Power MOSFET, P Channel, 30 V, 900 mA, 0.3 ohm, SuperSOT, Surface Mount

ONSEMI

The NDS352AP is a P-channel Logic Level Enhancement Mode Power Field Effect Transistor produced using high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device is particularly sui...

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500mW 3Pins
BZT03C91-TR
BZT03C91-TR - Zener Single Diode, 91 V, 3.25 W, SOD-57, 2 Pins, 175 °C, Through Hole

SC07151

Zener Single Diode, 91 V, 3.25 W, SOD-57, 2 Pins, 175 °C, Through Hole

VISHAY

• BZT03 series zener diode with surge current specification in 2 pin SOD-57 package • Glass passivated junction • Hermetically sealed package • Clamping time in picoseconds • Suitable for medium power voltage regulators and medium power transient suppress...

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3.25W 2Pins
1N5350BG
1N5350BG - Zener Single Diode, 13 V, 5 W, 017AA, 2 Pins, 200 °C, Through Hole

SC07177

Zener Single Diode, 13 V, 5 W, 017AA, 2 Pins, 200 °C, Through Hole

ONSEMI

The 1N5333B series Surmetic™ Voltage Regulator Zener Diode with tight limits and better operating characteristics that reflect the superior capabilities of silicon-oxide passivated junctions. All this in an axial lead, transfer-moulded plastic package that...

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5W 2Pins
MJE13007
MJE13007 - Bipolar (BJT) Single Transistor, NPN, 400V, 8A, 80W

SCMJE13007

Bipolar (BJT) Single Transistor, NPN, 400V, 8A, 80W

ONSEMI

• Power Dissipation : 80W • No. of Pins : 3Pins

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80W 3Pins
BAT46
BAT46 - Small Signal Schottky Diode, Single, 100 V, 150 mA, 450 mV, 750 mA, 125 °C

SC07326

Small Signal Schottky Diode, Single, 100 V, 150 mA, 450 mV, 750 mA, 125 °C

STMICROELECTRONICS

The BAT46 is a general purpose metal to silicon Small Signal Schottky Diode featuring high breakdown voltage, low forward voltage drop and low turn-on voltage. This diode is suited for protection and routing operations. • Very low conduction losses • Negli...

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- 2Pins
BZX79-C3V9.
BZX79-C3V9. - Zener Single Diode, 3.9 V, 500 mW, DO-35, 2 Pins, 200 °C

SC05693

Zener Single Diode, 3.9 V, 500 mW, DO-35, 2 Pins, 200 °C

NXP

• Power Dissipation : 500mW • No. of Pins : 2Pins

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500mW 2Pins
GBPC1202-E4/51
GBPC1202-E4/51 - Bridge Rectifier, Single Phase, 200 V, 12 A, Module, 4 Pins, 1.1 V

SC07514

Bridge Rectifier, Single Phase, 200 V, 12 A, Module, 4 Pins, 1.1 V

VISHAY

The GBPC1202-E4/51 is a 4-pin single-phase glass passivated Bridge Rectifier Diode with high surge current capability. It is general purpose use in AC/DC bridge full wave rectification for home appliances, office equipment and telecommunication application...

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- 4Pins
GBPC3504
GBPC3504 - Bridge Rectifier, Single Phase, 400 V, 35 A, Module, 4 Pins, 1.1 V

SC07524

Bridge Rectifier, Single Phase, 400 V, 35 A, Module, 4 Pins, 1.1 V

ONSEMI

The GBPC3504 is a 35A single-phase glass passivated Bridge Rectifier with integrally moulded heatsink. The bridge rectifier feature solderable terminals as per MIL-STD-202, method 208 standard. This bridge rectifier is general usage and suitable for many d...

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- 4Pins
FDN338P
FDN338P - Power MOSFET, P Channel, 20 V, 1.6 A, 0.115 ohm, SOT-23, Surface Mount

SC11041

Power MOSFET, P Channel, 20 V, 1.6 A, 0.115 ohm, SOT-23, Surface Mount

ONSEMI

The FDN338P is a 2.5V specified P-channel MOSFET uses advanced low voltage PowerTrench® process. It has been optimized for battery power management and load switch applications. The SuperSOT™ -3 provides low RDS (ON) and 30% higher power handling capabilit...

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500mW 3Pins
BZV85-C30
BZV85-C30 - Zener Single Diode, 30 V, 1 W, DO-41 (DO-204AL), 2 Pins, 200 °C

SC07101

Zener Single Diode, 30 V, 1 W, DO-41 (DO-204AL), 2 Pins, 200 °C

NXP

The BZV85 series medium-power voltage regulator Zener Diode designed in a small hermetically sealed leaded SOD66 (DO-41) glass package. It is suitable for general regulation functions. • 1.3W Total power dissipation (maximum) • ±5% Tolerance series (approx...

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1W 2Pins
MUR460RLG
MUR460RLG - Fast / Ultrafast Diode, 600 V, 4 A, Single, 1.28 V, 75 ns, 70 A

SC07381

Fast / Ultrafast Diode, 600 V, 4 A, Single, 1.28 V, 75 ns, 70 A

ONSEMI

The MUR460RLG is a SWITCHMODE™ ultra-fast axial-lead Power Rectifier with moulded epoxy case. This state-of-the-art device is design for use in switching power supplies, inverters and as free-wheeling diodes. • Cathode indicated by polarity band • All exte...

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- -
SSB44-E3/52T
SSB44-E3/52T - Schottky Rectifier, 40 V, 4 A, Single, DO-214AA (SMB), 2 Pins, 490 mV

SC11414

Schottky Rectifier, 40 V, 4 A, Single, DO-214AA (SMB), 2 Pins, 490 mV

VISHAY

The SSB44-E3/52T is a surface-mount high-current density Schottky Rectifier with solderable matte-tin plated terminals. It is suitable for use in low voltage high frequency inverters, free-wheeling, DC/DC converters and polarity protection applications. • ...

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- 2Pins
BC856
BC856 - Transistor, PNP SOT23

SC06598

Transistor, PNP SOT23

NXP

• Power Dissipation : 250mW • No. of Pins : 3Pins

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250mW 3Pins
ZVN2106G
ZVN2106G - Power MOSFET, N Channel, 60 V, 700 mA, 2 ohm, SOT-223, Surface Mount

SC11051

Power MOSFET, N Channel, 60 V, 700 mA, 2 ohm, SOT-223, Surface Mount

DIODES INC.

The ZVN2106G is a 60V N-channel Enhancement Mode Vertical MOSFET with matte tin plated terminals. The MOSFET is ideal for solenoids/relay driver for automotive and DC-DC converters. • Maximum continuous drain current • AEC-Q101 qualified • UL94V-0 Flammabi...

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2W 3Pins
IRF740APBF
IRF740APBF - Power MOSFET, N Channel, 400 V, 10 A, 0.55 ohm, TO-220AB, Through Hole

SC11085

Power MOSFET, N Channel, 400 V, 10 A, 0.55 ohm, TO-220AB, Through Hole

VISHAY

The IRF740APBF is a 400V N-channel Power MOSFET with low gate charge Qg results in simple drive requirement. It operates at high frequency with hard switching application. Suitable for SMPS and high speed power switching. • Improved gate, avalanche and dyn...

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125W 3Pins