Bipolar Transistors
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| Manufacturer Part No | Order Code | Description / Manufacturer | Availability | Price For |
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Quantity | Transistor Polarity | Collector Emitter Voltage Max | Continuous Collector Current | Power Dissipation | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC847C-7-F
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SC16101 |
Bipolar (BJT) Single Transistor, NPN, 45V, 100mA, 300mW, SOT-23, SMD DIODES INC. The BC847C-7-F is a NPN small signal Bipolar Transistor ideally suitable for automatic insertion, switching and AF amplifier applications. • UL94V-0 Flammability rating • BC856 - BC858 Complementary PNP types • Halogen-free, Green device • -65 to 150°C Ope...
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NPN | 45V | 100mA | 310mW | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BC546CTA
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SC15935 |
Bipolar (BJT) Single Transistor, NPN, 65V, 100mA, 625mW, TO-92 ONSEMI • Transistor Polarity : NPN • Collector Emitter Voltage Max : 65V • Continuous Collector Current : 100mA • Power Dissipation : 625mW
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NPN | 65V | 100mA | 625mW | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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DTC114EET1G
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SC15943 |
Bipolar Pre-Biased / Digital Transistor, BRT, Single NPN, 50V, 100mA, 10 kohm, 10 kohm ONSEMI The DTC114EET1G is a NPN Digital Transistor with monolithic bias resistor network designed to replace a single device and its external resistor bias network. The bias resistor transistor contains a single transistor with a monolithic bias network consistin...
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Single NPN | - | 100mA | 300mW | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MMBT2907ALT1G
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SC16036 |
Bipolar (BJT) Single Transistor, PNP, -60V, -600mA, 225mW, SOT-23 ONSEMI The MMBT2907ALT1G is a -60V PNP silicon Bipolar Transistor designed for use in linear and switching applications. The device is suitable for lower power surface mount applications. • Halogen-free/BFR-free • -60VDC Collector to base voltage (VCBO) • -5VDC E...
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PNP | 60V | 600mA | 300mW | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MPSA42
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SC15748 |
Bipolar (BJT) Single Transistor, NPN, 300V, 500mA, 625mW, TO-92 MULTICOMP PRO The MPSA42 is a NPN epitaxial planar Silicon Transistor with 160V minimum breakdown voltage. It is used for applications requiring relatively low collector current, such as lamp drivers and neon tubes. • Complementary high voltage transistor • -55 to 150°C...
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NPN | 300V | 500mA | 625mW | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC847BS-7-F
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SC16137 |
Bipolar Transistor Array, Dual, NPN, 45V, 100mA, 200mW, 200hFE, SOT-363 DIODES INC. The BC847BS-7-F is a dual NPN small signal surface-mount Bipolar Transistor Array ideally suitable for automatic insertion, switching and AF amplifier applications. • UL94V-0 Flammability rating • Ultra-small surface-mount package • Halogen-free, Green dev...
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Dual NPN | - | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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PZT2222AT1G
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SC16082 |
Bipolar (BJT) Single Transistor, NPN, 40V, 600mA, 1.5W, SOT-223, SMD ONSEMI The PZT2222AT1G is an NPN Silicon Planar Epitaxial Transistor designed for use in linear and switching and medium power surface mount applications. The formed leads absorb thermal stress during soldering, eliminating the possibility of damage to the die. T...
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NPN | 40V | 600mA | 1.5W | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC856BLT1G
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SC16084 |
Bipolar (BJT) Single Transistor, PNP, -65V, -100mA, 225mW, SOT-23 ONSEMI The BC856BLT1G is a PNP general purpose Bipolar Transistor designed for use in linear and switching applications. The device is housed in the package which is designed for lower power surface-mount applications. • AEC-Q101 qualified and PPAP capable
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PNP | 65V | 100mA | 225mW | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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PZT2907AT1G
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SC16096 |
Bipolar (BJT) Single Transistor, PNP, 60V, -600mA, 1.5W, SOT-223, SMD ONSEMI The PZT2907AT1G is a bipolar PNP Transistor designed for use as a general purpose amplifier and in switching applications. The device is housed in the package which is designed for medium power surface-mount applications. The package ensures level mounting...
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PNP | 60V | 600mA | 1.5W | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BCP53-16,115
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SC16029 |
Bipolar (BJT) Single Transistor, PNP, -80V, -1A, 650mW, SOT-223, SMD NEXPERIA The BCP53 series 1A PNP Medium Power Transistor with three current gain selections. It offers exposed heat-sink for excellent thermal and electrical conductivity. • High current • High power dissipation capability • Leadless very small SMD plastic package ...
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PNP | 80V | 1A | 650mW | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC161-16
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SC15812 |
Bipolar (BJT) Single Transistor, PNP, 60V, 1A, 800mW, TO-39 MULTICOMP PRO The BC161-16 is a -60V Silicon PNP Medium Power Transistor ideal for medium power amplifier and switching applications. • Collector-base voltage(Vcbo = 60V) • Emitter-base voltage(Vebo = 5V) • Multicomp Pro products are rated 4.6 out of 5 stars • 12 month ...
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PNP | 60V | 1A | 800mW | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MMBTA06LT1G
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SC16037 |
Bipolar (BJT) Single Transistor, NPN, 80V, 500mA, 225mW, SOT-23, SMD ONSEMI MMBTA06LT1G is a driver transistor. • Collector-emitter voltage is 80VDC min (IC = 1.0mAdc, IB = 0, TA = 25°C) • Emitter-base breakdown voltage is 4.0VDC min (IE = 100ADC, IC = 0, TA = 25°C • Collector current - continuous is 500mAdc • Electrostatic discha...
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NPN | 80V | 500mA | 225mW | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BFR93AE6327HTSA1
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SC16012 |
Bipolar - RF Transistor, NPN, 12V, 6GHz, 300mW, 90mA, SOT-23 INFINEON • Transistor Polarity : NPN • Collector Emitter Voltage Max : 12V • Continuous Collector Current : 90mA • Power Dissipation : 300mW
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NPN | 12V | 90mA | 300mW | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MMBT5401-7-F
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SC15929 |
Bipolar (BJT) Single Transistor, PNP, -150V, -600mA, 310mW, SOT-23, SMD DIODES INC. MMBT5401-7-F is a PNP high-voltage transistor. • Epitaxial planar die construction • Complementary NPN type - MMBT5551 • Ideal for low-power amplification and switching • SOT23 package • Power dissipation is 310mW at TA = +25°C • Operating and storage temp...
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PNP | 150V | 600mA | 310mW | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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TIP41A
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SC15379 |
Bipolar Transistor, NPN, 60V, 6A, TO-220 MULTICOMP PRO The TIP41A is a 60V NPN Power Transistor designed for general purpose amplifier and switching applications. • Collector-emitter sustaining voltage (Vceo (sus) = 60V minimum) • Collector-emitter saturation voltage(Vce (sat) = 1.5V maximum at Ic = 6A) • Coll...
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NPN | 60V | 6A | 65W | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC856ALT1G
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SC16053 |
Bipolar (BJT) Single Transistor, PNP, -65 , -100mA, 225mW, SOT-23 ONSEMI The BC856ALT1G is a PNP general purpose Bipolar Transistor designed for use in linear and switching applications. The device is housed in the package which is designed for lower power surface-mount applications. • AEC-Q101 qualified and PPAP capable
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PNP | 65V | 100mA | 225mW | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC817-16LT1G
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SC16059 |
Bipolar (BJT) Single Transistor, NPN, 45V, 500mA, 300mW, SOT-23, SMD ONSEMI The BC817-16LT1G is a NPN general purpose Bipolar Transistor designed for use in linear and switching applications. The device is housed in the package which is designed for lower power surface-mount applications. • AEC-Q101 qualified and PPAP capable
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NPN | 45V | 500mA | 300mW | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC807-25
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SC16071 |
Bipolar (BJT) Single Transistor, PNP, -45V, -500mA, 310mW, SOT-23, SMD DIODES INC. The BC807-25 is a PNP small signal Bipolar Transistor ideally suitable for automatic insertion, switching and AF amplifier applications. • UL94V-0 Flammability rating • Epitaxial planar die construction • BC817 Complementary NPN type • Halogen-free, Green ...
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PNP | 45V | 500mA | 310mW | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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2SA1943OTU
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SC15776 |
Bipolar (BJT) Single Transistor, PNP, -250V, -17A, 150W, TO-264 ONSEMI The 2SA1943OTU is a PNP epitaxial Silicon Transistor with excellent gain linearity for low THD, high current capability and high power dissipation. • High voltage • High frequency • Complement to 2SC5200/FJL4315
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PNP | 250V | 17A | 150W | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC846A
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SC16085 |
Bipolar (BJT) Single Transistor, NPN, 65V, 100mA, 300mW, SOT-23, SMD DIODES INC. The BC846A is a NPN small signal Bipolar Transistor ideally suitable for automatic insertion, switching and AF amplifier applications. • UL94V-0 Flammability rating • BC856 - BC858 Complementary PNP types • Halogen-free, Green device • -65 to 150°C Operati...
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NPN | 65V | 100mA | 310mW | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BD237
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SC09466 |
Transistor, NPN, TO126 CDIL • Transistor Polarity : NPN • Collector Emitter Voltage Max : 80V
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NPN | 80V | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MPSA06
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SC09465 |
Transistor, NPN, TO92 CDIL • Transistor Polarity : NPN • Collector Emitter Voltage Max : 80V • Continuous Collector Current : 500mA • Power Dissipation : 1.5W
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NPN | 80V | 500mA | 1.5W | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BD238
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SC09458 |
Transistor, PNP, TO126 CDIL • Transistor Polarity : PNP • Collector Emitter Voltage Max : 80V • Continuous Collector Current : 2A • Power Dissipation : 25W
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PNP | 80V | 2A | 25W | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MJE340
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SC09459 |
Transistor, NPN, TO126 CDIL • Transistor Polarity : NPN • Collector Emitter Voltage Max : 300V
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NPN | 300V | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC182B
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SC09311 |
Transistor, NPN, TO92 CDIL • Transistor Polarity : NPN • Collector Emitter Voltage Max : 50V • Continuous Collector Current : 100mA • Power Dissipation : 350mW
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NPN | 50V | 100mA | 350mW | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||