Bipolar Transistors
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| Manufacturer Part No | Order Code | Description / Manufacturer | Availability | Price For |
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Quantity | Transistor Polarity | Collector Emitter Voltage Max | Continuous Collector Current | Power Dissipation | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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ZTX450STZ
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SC21330 |
Bipolar (BJT) Single Transistor, NPN, 45 V, 1 A, 1 W, E-Line, Through Hole DIODES INC. • Transistor Polarity : NPN • Collector Emitter Voltage Max : 45V • Continuous Collector Current : 1A • Power Dissipation : 1W
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1+ €0.6069 (€0.75) 10+ €0.4879 (€0.60) 100+ €0.3808 (€0.47) |
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NPN | 45V | 1A | 1W | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BC817-16
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SC21378 |
Bipolar (BJT) Single Transistor, NPN, 45 V, 500 mA, 300 mW, SOT-23, Surface Mount MULTICOMP PRO The BC817-16 is a NPN Bipolar Transistor suitable for general purpose medium power amplifiers and switching requiring collector currents up to 1.2mA. • High collector current • High current gain • Low collector-emitter saturation voltage • -65 to 150°C Jun...
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NPN | 45V | 500mA | 300mW | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SS8050CBU
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SC21492 |
Bipolar (BJT) Single Transistor, NPN, 25 V, 1.5 A, 1 W, TO-226AA, Through Hole ONSEMI The SS8050CBU is a NPN Epitaxial Silicon Transistor designed for use in 2W output amplifier of portable radios in Class B push-pull operation. • Complimentary to SS8550
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5+ €0.3927 (€0.48) 10+ €0.2737 (€0.34) 100+ €0.1547 (€0.19) |
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NPN | 25V | 1.5A | 1W | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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ZTX851
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SC21332 |
Bipolar (BJT) Single Transistor, NPN, 60 V, 5 A, 1.2 W, E-Line, Through Hole DIODES INC. The ZTX851 is a 60V E-Line Silicon NPN Planar Medium Power High Current Transistor with optimised chip technology to give exceptionally high current capability coupled with very low saturation voltages. • Very low saturation voltage
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1+ €1.0948 (€1.35) 10+ €0.7854 (€0.97) 100+ €0.5236 (€0.64) |
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NPN | 60V | 5A | 1.2W | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
NJW0302G
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SC20271 |
Transistor, PNP, 250V, 15A, TO3P ONSEMI The NJW0302G is a PNP complementary Bipolar Power Transistor with superior gain linearity and safe operating area performance. This transistor is ideal for high fidelity audio amplifier output stages and other linear applications. • Complement to NJW0281G ...
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PNP | 250V | 15A | 150W | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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TIP32AG
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SC21495 |
Bipolar (BJT) Single Transistor, PNP, 60 V, 3 A, 40 W, TO-220, Through Hole ONSEMI • Transistor Polarity : PNP • Collector Emitter Voltage Max : 60V • Continuous Collector Current : 3A • Power Dissipation : 40W
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PNP | 60V | 3A | 40W | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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DTC114EKAT146
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SC21497 |
Bipolar Pre-Biased / Digital Transistor, Digital, Single NPN, 50 V, 100 mA, 10 kohm, 10 kohm ROHM The DTC114EKAT146 is a 100mA NPN Digital Transistor with built-in bias resistor. The built-in bias resistor enables the configuration of an inverter circuit without connecting external input resistors. • Only ON/OFF conditions need to be set for operation,...
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Single NPN | - | 100mA | 200mW | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC846B-13-F
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SC21300 |
Bipolar (BJT) Single Transistor, NPN, 65 V, 100 mA, 350 mW, SOT-23, Surface Mount DIODES INC. BC846B-13-F is a NPN small signal transistor. • For switching and AF amplifier applications • Power dissipation is 310mW at TA = +25°C • Collector-base breakdown voltage is 80V min at IC = 10µA, TA = +25°C • Collector cutoff current is 15nA max at VCB = 30...
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NPN | 65V | 100mA | 310mW | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC847BHZGT116
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SC21496 |
Bipolar (BJT) Single Transistor, NPN, 45 V, 100 mA, 350 mW, SOT-23, Surface Mount ROHM • Transistor Polarity : NPN • Collector Emitter Voltage Max : 45V • Continuous Collector Current : 100mA • Power Dissipation : 350mW
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NPN | 45V | 100mA | 350mW | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC807-25
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SC21377 |
Bipolar (BJT) Single Transistor, PNP, 45 V, 500 mA, 300 mW, SOT-23, Surface Mount MULTICOMP PRO The BC807-25 is a PNP Bipolar Transistor designed for general purpose amplifier applications. It has low collector-emitter saturation voltage. • High collector current • High current gain • -65 to 150°C Junction temperature range • Multicomp Pro products a...
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PNP | 45V | 500mA | 300mW | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC847W,115
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SC21408 |
Bipolar (BJT) Single Transistor, General Purpose, NPN, 45 V, 100 mA, 200 mW, SOT-323, Surface Mount NEXPERIA The BC847 series NPN general purpose Transistor in SMD plastic package.
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NPN | 45V | 100mA | 200mW | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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TIP31C
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SC21528 |
Bipolar (BJT) Single Transistor, NPN, 100 V, 3 A, 40 W, TO-220, Through Hole STMICROELECTRONICS The TIP31C is a base island technology NPN Power Transistor for audio, power linear and switching applications. • High Switching Speed • hFE Improved Linearity • hFE Grouping
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NPN | 100V | 3A | 40W | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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FZT753TA
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SC21317 |
Bipolar (BJT) Single Transistor, PNP, 100 V, 2 A, 3 W, SOT-223, Surface Mount DIODES INC. • Transistor Polarity : PNP • Collector Emitter Voltage Max : 100V • Continuous Collector Current : 2A • Power Dissipation : 3W
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PNP | 100V | 2A | 3W | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SMMBT3904LT1G
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SC21490 |
Bipolar (BJT) Single Transistor, NPN, 40 V, 200 mA, 300 mW, SOT-23, Surface Mount ONSEMI SMMBT3904LT1G is a NPN general purpose transistor in a 3 pin SOT-23 package. • Collector-emitter voltage is 40VDC • AEC-Q101 qualified and PPAP capable • Collector current - continuous is 200mA DC • Collector-base voltage VCBO is 60VDC, emitter-base voltag...
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NPN | 40V | 200mA | 300mW | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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PDTC123JT,215
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SC21428 |
Bipolar Pre-Biased / Digital Transistor, BRT, Single NPN, 50 V, 100 mA, 2.2 kohm, 47 kohm NEXPERIA The PDTC123JT is a 2.2 to 47kΩ NPN Resistor Equipped Transistor (RET) in a small surface-mount device plastic package. • Reduces component count • Built-in bias resistors • Reduces pick and place costs • Simplifies circuit design • AEC-Q101 qualified • PNP...
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Single NPN | - | 100mA | 250mW | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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PDTA143ET,215
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SC21427 |
Bipolar Pre-Biased / Digital Transistor, BRT, Single PNP, 50 V, 100 mA, 4.7 kohm, 4.7 kohm NEXPERIA The PDTA143ET is a 4.7kΩ PNP Resistor Equipped Transistor (RET) in a small surface-mount plastic package. • Reduces component count • Built-in bias resistors • Reduces pick and place costs • Simplifies circuit design • AEC-Q101 qualified • NPN complement i...
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Single PNP | - | 100mA | 250mW | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC817-25
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SC21379 |
Bipolar (BJT) Single Transistor, NPN, 45 V, 500 mA, 300 mW, SOT-23, Surface Mount MULTICOMP PRO The BC817-25 is a general purpose NPN Transistor with high collector current and high current gain. Designed for use in AF applications. • Low collector-emitter saturation voltage • Complement to BC807 • Multicomp Pro products are rated 4.6 out of 5 stars ...
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NPN | 45V | 500mA | 300mW | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC556BTA
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SC21471 |
Bipolar (BJT) Single Transistor, PNP, 65 V, 100 mA, 500 mW, TO-92, Through Hole ONSEMI The BC556BTA is a PNP epitaxial silicon Bipolar Transistor suitable for switching and amplifier applications. • High voltage VCEO • Complement to BC546
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PNP | 65V | 100mA | 500mW | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC817
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SC06580 |
Transistor, NPN SOT23 NXP • Transistor Polarity : NPN • Collector Emitter Voltage Max : 45V • Continuous Collector Current : 500mA • Power Dissipation : 250mW
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NPN | 45V | 500mA | 250mW | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC807-25
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SC06612 |
Transistor, PNP, SOT23 NXP The BC807-25 is a PNP general purpose Transistor with 3 leads, high current and low voltage, plastic surface mount package. Designed for switching and amplification applications. • 150°C Junction temperature • 5pF Collector capacitance
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PNP | 45V | 500mA | 250mW | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BFS17PE6327HTSA1
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SC11003 |
Bipolar - RF Transistor, NPN, 15 V, 2.5 GHz, 280 mW, 25 mA, SOT-23 INFINEON The BFS 17P E6327 is a NPN Silicon RF Transistor for broadband amplifiers up to 1GHz at collector currents from 1 to 20mA. It is suitable for use with amplifier and oscillator applications in RF front-end.
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NPN | 15V | 25mA | 280mW | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC846
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SC06582 |
Transistor, NPN SOT23 NXP • Transistor Polarity : NPN • Collector Emitter Voltage Max : 65V • Continuous Collector Current : 100mA • Power Dissipation : 250mW
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NPN | 65V | 100mA | 250mW | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MMUN2216LT1G
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SC10967 |
Bipolar Pre-Biased / Digital Transistor, BRT, Single NPN, 50 V, 100 mA, 4.7 kohm ONSEMI The MMUN2216LT1G is a NPN Bipolar Digital Transistor designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors, a s...
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Single NPN | - | 100mA | 400mW | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC807-25LVL
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SC15933 |
Bipolar (BJT) Single Transistor, PNP, -45V, -500mA, 250mW, TO-236AB, SMD NEXPERIA • Transistor Polarity : PNP • Collector Emitter Voltage Max : 45V • Continuous Collector Current : 500mA • Power Dissipation : 250mW
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PNP | 45V | 500mA | 250mW | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC817K-40VL
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SC15928 |
Bipolar (BJT) Single Transistor, NPN, 45V, 500mA, 350mW, TO-236AB, SMD NEXPERIA • Transistor Polarity : NPN • Collector Emitter Voltage Max : 45V • Continuous Collector Current : 500mA • Power Dissipation : 350mW
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NPN | 45V | 500mA | 350mW | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||