Bipolar Transistors
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Manufacturer Part No | Order Code | Description / Manufacturer | Availability | Price For |
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Quantity | Transistor Polarity | Collector Emitter Voltage Max | Continuous Collector Current | Power Dissipation | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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STN9260
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SC15930 |
Bipolar (BJT) Single Transistor, PNP, -600V, -500mA, 1.6W, SOT-223, SMD STMICROELECTRONICS • Transistor Polarity : PNP • Collector Emitter Voltage Max : 600V • Continuous Collector Current : 500mA • Power Dissipation : 1.6W
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PNP | 600V | 500mA | 1.6W | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BC846S,115
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SC16128 |
Bipolar Transistor Array, NPN, 65V, 100mA, 200mW, 110hFE, SOT-363 NEXPERIA The BC846S is a dual NPN General Purpose Transistor in a plastic package. It is suitable for use with general purpose switching and small signal amplification. • Reduces number of components and board space • No mutual interference between the transistors ...
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Dual NPN | - | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MMBT5401LT1G
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SC16070 |
Bipolar (BJT) Single Transistor, PNP, -150V, -500mA, 225mW, SOT-23 ONSEMI The MMBT5401LT1G is a PNP high voltage Bipolar Transistor designed for general purpose switching applications. The device is housed in the package which is designed for lower power surface-mount applications. • Halogen-free • AEC-Q101 qualified and PPAP ca...
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PNP | 150V | 500mA | 225mW | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2N2219A
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SC15752 |
Bipolar (BJT) Single Transistor, NPN, 40V, 300MHz, 400mW, 800mA, 35 hFE MULTICOMP PRO 2N2219A is a NPN silicon transistor for high speed switching applications. • 75V collector-base voltage • 6V emitter-base voltage • 1.2W total device dissipation • Multicomp Pro products are rated 4.6 out of 5 stars • 12 month limited warranty *view Terms ...
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NPN | 40V | 800mA | 3W | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BC856BDW1T1G
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SC16138 |
Bipolar Transistor Array, Dual PNP, -65V, -100mA, 380mW, 220hFE, SOT-363 ONSEMI The BC856BDW1T1G is a PNP dual Bipolar Transistor Array designed for general purpose amplifier applications. It is designed for low power surface-mount applications. • Halogen-free • -55 to 150°C Junction temperature range
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Dual PNP | - | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC846BPN,115
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SC16122 |
Bipolar Transistor Array, NPN, PNP, 65V, 100mA, 200mW, 200 hFE, SOT-363 NEXPERIA The BC846BPN is a 100mA NPN-PNP General Purpose Transistor Pair in a very small surface-mount plastic package. It is suitable for use with general purpose switching and amplification. • Low collector capacitance • Low collector-emitter saturation voltage •...
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NPN, PNP | - | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MMBT3906,215
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SC16097 |
Bipolar (BJT) Single Transistor, Switching, PNP, -40V, -200mA, 250mW, TO-236AB, SMD NEXPERIA The MMBT3906,215 is a PNP Switching Transistor housed in a plastic package. It is suitable for use with the switching and linear amplification. • NPN complement is MMBT3904 • 7B Marking code
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PNP | 40V | 200mA | 250mW | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SS8550DBU
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SC15798 |
Bipolar (BJT) Single Transistor, PNP, -25V, -1.5A, 1W, TO-226AA ONSEMI The SS8550DBU is a PNP Epitaxial Silicon Transistor designed for use in 2W output amplifier of portable radios in Class B push-pull operation. • Complimentary to SS8050
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PNP | 25V | 1.5A | 1W | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC807-40LVL
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SC15934 |
Bipolar (BJT) Single Transistor, PNP, -45V, -500mA, 250mW, TO-236AB, SMD NEXPERIA • Transistor Polarity : PNP • Collector Emitter Voltage Max : 45V • Continuous Collector Current : 500mA • Power Dissipation : 250mW
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PNP | 45V | 500mA | 250mW | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BD139-10
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SC15373 |
Bipolar Transistor, NPN, 80V, 1.5A, TO-126 MULTICOMP PRO The BD139-10 is a NPN Transistor with 80V collector-emitter voltage and 12.5W power dissipation. • Collector-base voltage(Vcbo = 100V) • Emitter-base voltage(Vebo = 5V) • Multicomp Pro products are rated 4.6 out of 5 stars • 12 month limited warranty *view...
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NPN | 80V | 1.5A | 12.5W | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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FMMT591
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SC16027 |
Bipolar (BJT) Single Transistor, PNP, 60V, -1A, 500mW, SOT-23, SMD DIODES INC. The FMMT591 is a PNP silicon planar medium power Bipolar Transistor offers 355mΩ low equivalent on resistance RCE (sat) at 1A. • FMMT491 Complementary NPN type • -55 to 150°C Operating temperature range
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PNP | 60V | 1A | 500mW | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC846BW,115
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SC16050 |
Bipolar (BJT) Single Transistor, NPN, 65V, 100mA, 200mW, SOT-323, SMD NEXPERIA The BC846BW,115 is a NPN Switching Transistor in surface mount device plastic package with 3 leads. • Two different gain selections
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NPN | 65V | 100mA | 200mW | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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FZT853
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SC16106 |
Bipolar (BJT) Single Transistor, NPN, 100V, 6A, 3W, SOT-223, SMD DIODES INC. FZT853 is a 100V NPN silicon planar high current (high performance) transistor in a 4-pin SOT223 package. • Extremely low equivalent on-resistance RCE(sat) 44mohm at 5A • 6A continuous current, up to 10A peak current • Very low saturation voltages • Excell...
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NPN | 100V | 6A | 3W | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC817
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SC16033 |
Bipolar (BJT) Single Transistor, NPN, 45V, 500mA, 300mW, SOT-23, SMD MULTICOMP PRO The BC817 is a NPN Transistor for use in switching and general purpose medium power amplifier. • Complement to BC 807 • High Collector Current • High Current Gain • Multicomp Pro products are rated 4.6 out of 5 stars • 12 month limited warranty *view Terms...
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NPN | 45V | 500mA | 300mW | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MMBT3906-7-F
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SC16087 |
Bipolar (BJT) Single Transistor, PNP, -40V, -200mA, 300mW, SOT-23, SMD DIODES INC. The MMBT3906-7-F is a -40V PNP Small Signal Transistor with matte tin-plated leads. The terminals can solderable as per MIL-STD-202, method 208. The case is made of molded plastic, "Green" molding compound (UL94V-0). Complementary NPN type transistor is MM...
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PNP | 40V | 200mA | 310mW | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC847BLT1G
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SC16045 |
Bipolar (BJT) Single Transistor, General Purpose, NPN, 45V, 100mA, 300mW, SOT-23, SMD ONSEMI The BC847BLT1G is a NPN silicon general purpose Bipolar Transistor, designed for use in linear and switching applications. • Inductive load protection • Steering logic • Polarity reversal protection • ESD rating - Human body model of <gt/>4000V • ESD ratin...
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NPN | 45V | 100mA | 300mW | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BCX56-16,115
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SC16020 |
Bipolar (BJT) Single Transistor, NPN, 80V, 1A, 500mW, SOT-89, SMD NEXPERIA The BCX56 series 1A NPN Medium Power Transistor in a very small leadless surface-mount plastic package. • High current • Three current gain selections • High power dissipation capability • Exposed heat-sink for excellent thermal and electrical conductivity...
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NPN | 80V | 1A | 500mW | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC547CBU
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SC15784 |
Bipolar (BJT) Single Transistor, NPN, 45V, 100mA, 500mW, TO-92 ONSEMI The BC547CBU is a NPN epitaxial silicon Bipolar Transistor suitable for switching and amplifier applications. • Complement to BC557
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NPN | 45V | 100mA | 500mW | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BSR14
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SC16031 |
Bipolar (BJT) Single Transistor, NPN, 40V, 800mA, 350mW, SOT-23, SMD ONSEMI The BSR14 is a NPN general purpose Bipolar Transistor designed for use as a medium power amplifier and switch requiring collector currents up to 500mA. • Sourced from Process 19 • -55 to 150°C Operating junction temperature range
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NPN | 40V | 800mA | 350mW | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC807,215
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SC16022 |
Bipolar (BJT) Single Transistor, PNP, -45V, -500mA, 250mW, SOT-23 NEXPERIA The BC807,215 is a PNP General-purpose Transistor with 3 leads, high current and low voltage, plastic surface mount package. Designed for switching and amplification applications. • 5pF Collector capacitance
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PNP | 45V | 500mA | 250mW | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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2N1893
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SC15753 |
Bipolar (BJT) Single Transistor, NPN, 80V, 500mA, 800mW, TO-39 MULTICOMP PRO The 2N1893 is a 80V Bipolar (BJT) Silicon NPN Transistor designed primarily for amplifier and switching applications. • High breakdown voltage • Low leakage current • Low capacity • Beta useful over an extremely wide current range • Multicomp Pro products ...
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NPN | 80V | 500mA | 800mW | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC858CLT1G
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SC16068 |
Bipolar (BJT) Single Transistor, General Purpose, PNP, 30V, 100mA, 225mW, SOT-23, SMD ONSEMI The BC858CLT1G is a PNP general purpose Bipolar Transistor is designed for use in linear and switching applications. The device is housed in the package which is designed for lower power surface-mount applications. • AEC-Q101 qualified and PPAP capable
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PNP | 30V | 100mA | 225mW | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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FZT953
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SC16103 |
Bipolar (BJT) Single Transistor, PNP, 100V, -5A, 3W, SOT-223, SMD DIODES INC. The FZT953 is a -100V PNP Complementary Medium Power High Current Transistor with matte tin plated leads solderable as per MIL-STD-202 standard, method 208. • High continuous collector current • Low saturation voltages • hFE specified up to -10A for a high...
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PNP | 100V | 5A | 3W | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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FMMT493
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SC16073 |
Bipolar (BJT) Single Transistor, NPN, 100V, 1A, 500mW, SOT-23, SMD DIODES INC. FMMT493 is a 100V, 2A NPN silicon planar medium power transistor in a 3-pin SOT-23 package. • Transition frequency of 150MHz • Power dissipation (Pd) of 500mW • Continuous collector current of 1A • Operating temperature range from -55°C to 150°C
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NPN | 100V | 1A | 500mW | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BCX55-16,115
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SC16066 |
Bipolar (BJT) Single Transistor, NPN, 60V, 1A, 500mW, SOT-89, SMD NEXPERIA The BCX55 series 1A NPN Medium Power Transistor in a very small leadless surface-mount plastic package. • High current • Three current gain selections • High power dissipation capability • Exposed heat-sink for excellent thermal and electrical conductivity...
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NPN | 60V | 1A | 500mW |