Bipolar Transistors

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Transistor Polarity Collector Emitter Voltage Max Continuous Collector Current Power Dissipation
 
 
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BC33725BU
BC33725BU - Transistor, Bipolar, NPN, 45V, 800mA, 625mW, TO92-3

SC15780

Transistor, Bipolar, NPN, 45V, 800mA, 625mW, TO92-3

ONSEMI

The BC33725BU is a NPN Epitaxial Silicon Transistor suitable for AF-driver stages, low-power output stages, switching and amplifier applications. • Complement to BC327

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NPN 45V 800mA 625mW
FMMT718
FMMT718 - Bipolar (BJT) Single Transistor, PNP, 20V, -1.5A, 625mW, SOT-23, SMD

SC16023

Bipolar (BJT) Single Transistor, PNP, 20V, -1.5A, 625mW, SOT-23, SMD

DIODES INC.

The FMMT718 is a PNP silicon power switching Bipolar Transistor offers 625mW power dissipation and extremely low saturation voltage. • 10A Peak pulse current • Excellent hFE characteristics up to 10A • Exhibits extremely low equivalent on resistance • NPN ...

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PNP 20V 1.5A 625mW
BC846B,215
BC846B,215 - Bipolar (BJT) Single Transistor, NPN, 65V, 100mA, 250mW, SOT-23, SMD

SC16007

Bipolar (BJT) Single Transistor, NPN, 65V, 100mA, 250mW, SOT-23, SMD

NEXPERIA

BC846B,215 is a 65V, 100mA NPN general purpose transistor in a SOT23 package. Suitable for general-purpose switching and amplification. • SMD plastic package • 250mW power dissipation • Ambient temperature range from -65°C to 150°C

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NPN 65V 100mA 250mW
BC847BLT3G
BC847BLT3G - Bipolar (BJT) Single Transistor, NPN, 45V, 100mA, 225mW, SOT-23, SMD

SC16032

Bipolar (BJT) Single Transistor, NPN, 45V, 100mA, 225mW, SOT-23, SMD

ONSEMI

• Transistor Polarity : NPN • Collector Emitter Voltage Max : 45V • Continuous Collector Current : 100mA • Power Dissipation : 225mW

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NPN 45V 100mA 225mW
PDTC143ET,215
PDTC143ET,215 - Bipolar Pre-Biased / Digital Transistor, BRT, Single NPN, 50V, 100mA, 4.7 kohm, 4.7 kohm

SC15946

Bipolar Pre-Biased / Digital Transistor, BRT, Single NPN, 50V, 100mA, 4.7 kohm, 4.7 kohm

NEXPERIA

The PDTC143ET,215 is a NPN Resistor Equipped Transistor (RET) housed in small surface-mount plastic package. It offers built-in bias resistors and simplifies circuit design. It is designed for use with control of IC inputs, cost-saving alternative for BC84...

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Single NPN - 100mA 250mW
BCP56-16,115
BCP56-16,115 - Bipolar (BJT) Single Transistor, NPN, 80V, 1A, 650mW, SOT-223, SMD

SC16109

Bipolar (BJT) Single Transistor, NPN, 80V, 1A, 650mW, SOT-223, SMD

NEXPERIA

The BCP56 series 1A NPN Medium Power Transistor in a very small leadless surface-mount plastic package. • High current • Three current gain selections • High power dissipation capability • Exposed heat-sink for excellent thermal and electrical conductivity...

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NPN 80V 1A 650mW
BC856B,215
BC856B,215 - Bipolar (BJT) Single Transistor, PNP, -65V, -100mA, 250mW, SOT-23

SC16009

Bipolar (BJT) Single Transistor, PNP, -65V, -100mA, 250mW, SOT-23

NEXPERIA

The BC856B,215 is a PNP Transistor in SMD plastic package with low current and voltage. Used for general purpose switching and amplification. • Complement to BC847

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PNP 65V 100mA 250mW
MJD44H11G
MJD44H11G - Bipolar (BJT) Single Transistor, Audio, NPN, 80V, 8A, 20W, TO-252 (DPAK), SMD

SC16077

Bipolar (BJT) Single Transistor, Audio, NPN, 80V, 8A, 20W, TO-252 (DPAK), SMD

ONSEMI

The MJD44H11G is a bipolar Power Transistor, designed for general purpose power and switching output or driver stages in applications such as switching regulators, converters and power amplifiers. • Lead formed for surface mount application in plastic slee...

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NPN 80V 8A 20W
BC847C,215
BC847C,215 - Bipolar (BJT) Single Transistor, General Purpose, NPN, 45V, 100mA, 250mW, SOT-23, SMD

SC16008

Bipolar (BJT) Single Transistor, General Purpose, NPN, 45V, 100mA, 250mW, SOT-23, SMD

NEXPERIA

BC847C,215 is a 45V, 100mA NPN general-purpose transistor in a SOT23 package. Suitable for general-purpose switching and amplification. • SMD plastic package • 250mW power dissipation • Ambient temperature range from -65°C to 150°C

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NPN 45V 100mA 250mW
BC847ALT1G
BC847ALT1G - Bipolar (BJT) Single Transistor, NPN, 45V, 100mA, 300mW, SOT-23, SMD

SC16047

Bipolar (BJT) Single Transistor, NPN, 45V, 100mA, 300mW, SOT-23, SMD

ONSEMI

The BC847ALT1G is a 45V NPN silicon Bipolar Transistor designed for use in linear and switching applications. The device is suitable for lower power surface mount applications, ESD protection, polarity reversal protection, data line protection, inductive l...

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NPN 45V 100mA 300mW
MMBTA06-7-F
MMBTA06-7-F - Bipolar (BJT) Single Transistor, NPN, 80V, 500mA, 300mW, SOT-23, SMD

SC16080

Bipolar (BJT) Single Transistor, NPN, 80V, 500mA, 300mW, SOT-23, SMD

DIODES INC.

The MMBTA06-7-F is a NPN small signal Bipolar Transistor offers 500mA continuous collector current and 80V collector-base voltage. It is ideal for low power amplification and switching. • UL94V-0 Flammability rating • Epitaxial planar die construction • MM...

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NPN 80V 500mA 300mW
MJE3055T
MJE3055T - Bipolar (BJT) Single Transistor, NPN, 60V, 10A, 75W, TO-220

SC15821

Bipolar (BJT) Single Transistor, NPN, 60V, 10A, 75W, TO-220

STMICROELECTRONICS

The MJE3055T is a 60V Silicon Epitaxial Base NPN Power Transistor intended for power switching circuits and general purpose amplifiers. Fast switching times and very low saturation voltage resulting in reduced switching and conduction losses. • Complementa...

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NPN 60V 10A 75W
TIP32CG
TIP32CG - Bipolar (BJT) Single Transistor, General Purpose, PNP, 100V, 3A, 40W, TO-220AB

SC15738

Bipolar (BJT) Single Transistor, General Purpose, PNP, 100V, 3A, 40W, TO-220AB

ONSEMI

The TIP32CG is a bipolar PNP Power Transistor designed for use in general purpose amplifier and switching applications. • Complementary device

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PNP 100V 3A 40W
MUN5211DW1T1G
MUN5211DW1T1G - Bipolar Pre-Biased / Digital Transistor, BRT, Dual NPN, 50V, 100mA, 10 kohm, 10 kohm

SC15948

Bipolar Pre-Biased / Digital Transistor, BRT, Dual NPN, 50V, 100mA, 10 kohm, 10 kohm

ONSEMI

The MUN5211DW1T1G is a dual NPN Bipolar Digital Transistor designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistor...

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Dual NPN - 100mA 385mW
MMBT3904LT1G
MMBT3904LT1G - Bipolar (BJT) Single Transistor, General Purpose, NPN, 40V, 200mA, 225mW, SOT-23, SMD

SC15980

Bipolar (BJT) Single Transistor, General Purpose, NPN, 40V, 200mA, 225mW, SOT-23, SMD

ONSEMI

MMBT3904LT1G is a NPN silicon, surface mount, general purpose transistor. • Collector-emitter breakdown voltage is 40VDC min (TA = 25°C, IC = 1.0mAdc, IB = 0) • Collector-base breakdown voltage is 60VDC min (IC = 0.1µmAdc, IE = 0, TA = 25°C) • Emitter-base...

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NPN 40V 200mA 225mW
BC817-40W,115
BC817-40W,115 - Bipolar (BJT) Single Transistor, NPN, 45V, 500mA, 200mW, SOT-323, SMD

SC16024

Bipolar (BJT) Single Transistor, NPN, 45V, 500mA, 200mW, SOT-323, SMD

NEXPERIA

The BC817 series 500mA NPN General Purpose Transistor suitable for use with general purpose switching and amplification. • High current • Low voltage • BC807 PNP complement

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NPN 45V 500mA 200mW
BCV62B,215
BCV62B,215 - Bipolar Transistor Array, Dual PNP, 30V, -100mA, 250mW, 220hFE, SOT-143B

SC16131

Bipolar Transistor Array, Dual PNP, 30V, -100mA, 250mW, 220hFE, SOT-143B

NEXPERIA

The BCV62B is a PNP general-purpose double Bipolar Transistor Array in a small surface-mount plastic package. It is designed for applications with working point independent of temperature and current mirrors. • Low current • Low voltage • Matched pairs • B...

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Dual PNP - - -
BSR16..
BSR16.. - Bipolar (BJT) Single Transistor, PNP, -60V, -800mA, 350mW, SOT-23, SMD

SC16019

Bipolar (BJT) Single Transistor, PNP, -60V, -800mA, 350mW, SOT-23, SMD

ONSEMI

The BSR16 is a PNP Bipolar Transistor designed for use as a general purpose amplifier and switches requiring collector currents up to 500mA. • Sourced from Process 63 • -55 to 150°C Operating junction temperature range

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PNP 60V 800mA 350mW
2N5416
2N5416 - Bipolar (BJT) Single Transistor, PNP, -300V, -1A, 1W, TO-39

SC15811

Bipolar (BJT) Single Transistor, PNP, -300V, -1A, 1W, TO-39

MULTICOMP PRO

The 2N5416 is a -300V Silicon PNP High Voltage Transistor ideal for high speed switching and linear amplifier appliances in military, industrial and commercial equipment. • Collector-base voltage(Vcbo = 350V) • Emitter-base voltage(Vebo = 6V) • Multicomp P...

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PNP 300V 1A 1W
FMMT458
FMMT458 - Bipolar (BJT) Single Transistor, NPN, 400V, 225mA, 500mW, SOT-23, SMD

SC16056

Bipolar (BJT) Single Transistor, NPN, 400V, 225mA, 500mW, SOT-23, SMD

DIODES INC.

FMMT458 is a NPN high voltage transistor in a 3 pin SOT23 package. • BVCEO is greater than 400V • IC = 225mA high continuous collector current • ICM = 1A peak pulse current • 500mW power dissipation • Excellent hFE characteristics up to 100mA • Complementa...

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NPN 400V 225mA 500mW
BC846BLT3G
BC846BLT3G - Bipolar (BJT) Single Transistor, NPN, 65V, 100mA, 225mW, SOT-23, SMD

SC16046

Bipolar (BJT) Single Transistor, NPN, 65V, 100mA, 225mW, SOT-23, SMD

ONSEMI

• Transistor Polarity : NPN • Collector Emitter Voltage Max : 65V • Continuous Collector Current : 100mA • Power Dissipation : 225mW

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NPN 65V 100mA 225mW
PDTD123YT,215
PDTD123YT,215 - Bipolar Pre-Biased / Digital Transistor, BRT, Single NPN, 50V, 500mA, 2.2 kohm, 10 kohm

SC15947

Bipolar Pre-Biased / Digital Transistor, BRT, Single NPN, 50V, 500mA, 2.2 kohm, 10 kohm

NEXPERIA

The PDTD123YT is a 2.2 to 10kΩ NPN Resistor Equipped Transistor (RET) in a surface-mount plastic package. • Built-in bias resistors • Reduces component count • Simplifies circuit design • Reduces pick and place costs • ±10% Resistor ratio tolerance • PNP c...

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Single NPN - 500mA 250mW
BC640TA
BC640TA - Bipolar (BJT) Single Transistor, PNP, -80V, -1A, 1W, TO-92

SC15792

Bipolar (BJT) Single Transistor, PNP, -80V, -1A, 1W, TO-92

ONSEMI

The BC640TA is a PNP Epitaxial Silicon Transistor designed for use in switching and amplifier applications. • Complement to BC639 • -55 to 150°C Operating junction temperature range

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PNP 80V 1A 1W
FMMT591A
FMMT591A - Transistor, PNP, SOT23

SC16064

Transistor, PNP, SOT23

DIODES INC.

The FMMT591A is a PNP silicon planar medium power Bipolar Transistor offers 350mΩ low equivalent on resistance RCE (sat) at 1A. • FMMT491A Complementary NPN type • -55 to 150°C Operating temperature range

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PNP 40V 1A 500mW
BC850CLT1G
BC850CLT1G - Bipolar (BJT) Single Transistor, NPN, 45V, 100mA, 225mW, SOT-23, SMD

SC16098

Bipolar (BJT) Single Transistor, NPN, 45V, 100mA, 225mW, SOT-23, SMD

ONSEMI

The BC850CLT1G is a NPN general purpose Bipolar Transistor designed for use in linear and switching applications. The device is housed in the package which is designed for lower power surface-mount applications. • Moisture sensitivity level-1 • AEC-Q101 qu...

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NPN 45V 100mA 225mW