Bipolar Transistors
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Manufacturer Part No | Order Code | Description / Manufacturer | Availability | Price For |
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Quantity | Transistor Polarity | Collector Emitter Voltage Max | Continuous Collector Current | Power Dissipation | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC33725BU
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SC15780 |
Transistor, Bipolar, NPN, 45V, 800mA, 625mW, TO92-3 ONSEMI The BC33725BU is a NPN Epitaxial Silicon Transistor suitable for AF-driver stages, low-power output stages, switching and amplifier applications. • Complement to BC327
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NPN | 45V | 800mA | 625mW | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
FMMT718
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SC16023 |
Bipolar (BJT) Single Transistor, PNP, 20V, -1.5A, 625mW, SOT-23, SMD DIODES INC. The FMMT718 is a PNP silicon power switching Bipolar Transistor offers 625mW power dissipation and extremely low saturation voltage. • 10A Peak pulse current • Excellent hFE characteristics up to 10A • Exhibits extremely low equivalent on resistance • NPN ...
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PNP | 20V | 1.5A | 625mW | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BC846B,215
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SC16007 |
Bipolar (BJT) Single Transistor, NPN, 65V, 100mA, 250mW, SOT-23, SMD NEXPERIA BC846B,215 is a 65V, 100mA NPN general purpose transistor in a SOT23 package. Suitable for general-purpose switching and amplification. • SMD plastic package • 250mW power dissipation • Ambient temperature range from -65°C to 150°C
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NPN | 65V | 100mA | 250mW | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BC847BLT3G
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SC16032 |
Bipolar (BJT) Single Transistor, NPN, 45V, 100mA, 225mW, SOT-23, SMD ONSEMI • Transistor Polarity : NPN • Collector Emitter Voltage Max : 45V • Continuous Collector Current : 100mA • Power Dissipation : 225mW
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NPN | 45V | 100mA | 225mW | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
PDTC143ET,215
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SC15946 |
Bipolar Pre-Biased / Digital Transistor, BRT, Single NPN, 50V, 100mA, 4.7 kohm, 4.7 kohm NEXPERIA The PDTC143ET,215 is a NPN Resistor Equipped Transistor (RET) housed in small surface-mount plastic package. It offers built-in bias resistors and simplifies circuit design. It is designed for use with control of IC inputs, cost-saving alternative for BC84...
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Single NPN | - | 100mA | 250mW | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BCP56-16,115
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SC16109 |
Bipolar (BJT) Single Transistor, NPN, 80V, 1A, 650mW, SOT-223, SMD NEXPERIA The BCP56 series 1A NPN Medium Power Transistor in a very small leadless surface-mount plastic package. • High current • Three current gain selections • High power dissipation capability • Exposed heat-sink for excellent thermal and electrical conductivity...
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NPN | 80V | 1A | 650mW | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC856B,215
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SC16009 |
Bipolar (BJT) Single Transistor, PNP, -65V, -100mA, 250mW, SOT-23 NEXPERIA The BC856B,215 is a PNP Transistor in SMD plastic package with low current and voltage. Used for general purpose switching and amplification. • Complement to BC847
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PNP | 65V | 100mA | 250mW | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MJD44H11G
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SC16077 |
Bipolar (BJT) Single Transistor, Audio, NPN, 80V, 8A, 20W, TO-252 (DPAK), SMD ONSEMI The MJD44H11G is a bipolar Power Transistor, designed for general purpose power and switching output or driver stages in applications such as switching regulators, converters and power amplifiers. • Lead formed for surface mount application in plastic slee...
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NPN | 80V | 8A | 20W | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC847C,215
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SC16008 |
Bipolar (BJT) Single Transistor, General Purpose, NPN, 45V, 100mA, 250mW, SOT-23, SMD NEXPERIA BC847C,215 is a 45V, 100mA NPN general-purpose transistor in a SOT23 package. Suitable for general-purpose switching and amplification. • SMD plastic package • 250mW power dissipation • Ambient temperature range from -65°C to 150°C
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NPN | 45V | 100mA | 250mW | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC847ALT1G
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SC16047 |
Bipolar (BJT) Single Transistor, NPN, 45V, 100mA, 300mW, SOT-23, SMD ONSEMI The BC847ALT1G is a 45V NPN silicon Bipolar Transistor designed for use in linear and switching applications. The device is suitable for lower power surface mount applications, ESD protection, polarity reversal protection, data line protection, inductive l...
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NPN | 45V | 100mA | 300mW | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MMBTA06-7-F
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SC16080 |
Bipolar (BJT) Single Transistor, NPN, 80V, 500mA, 300mW, SOT-23, SMD DIODES INC. The MMBTA06-7-F is a NPN small signal Bipolar Transistor offers 500mA continuous collector current and 80V collector-base voltage. It is ideal for low power amplification and switching. • UL94V-0 Flammability rating • Epitaxial planar die construction • MM...
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NPN | 80V | 500mA | 300mW | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MJE3055T
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SC15821 |
Bipolar (BJT) Single Transistor, NPN, 60V, 10A, 75W, TO-220 STMICROELECTRONICS The MJE3055T is a 60V Silicon Epitaxial Base NPN Power Transistor intended for power switching circuits and general purpose amplifiers. Fast switching times and very low saturation voltage resulting in reduced switching and conduction losses. • Complementa...
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NPN | 60V | 10A | 75W | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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TIP32CG
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SC15738 |
Bipolar (BJT) Single Transistor, General Purpose, PNP, 100V, 3A, 40W, TO-220AB ONSEMI The TIP32CG is a bipolar PNP Power Transistor designed for use in general purpose amplifier and switching applications. • Complementary device
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PNP | 100V | 3A | 40W | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MUN5211DW1T1G
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SC15948 |
Bipolar Pre-Biased / Digital Transistor, BRT, Dual NPN, 50V, 100mA, 10 kohm, 10 kohm ONSEMI The MUN5211DW1T1G is a dual NPN Bipolar Digital Transistor designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistor...
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Dual NPN | - | 100mA | 385mW | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MMBT3904LT1G
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SC15980 |
Bipolar (BJT) Single Transistor, General Purpose, NPN, 40V, 200mA, 225mW, SOT-23, SMD ONSEMI MMBT3904LT1G is a NPN silicon, surface mount, general purpose transistor. • Collector-emitter breakdown voltage is 40VDC min (TA = 25°C, IC = 1.0mAdc, IB = 0) • Collector-base breakdown voltage is 60VDC min (IC = 0.1µmAdc, IE = 0, TA = 25°C) • Emitter-base...
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NPN | 40V | 200mA | 225mW | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC817-40W,115
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SC16024 |
Bipolar (BJT) Single Transistor, NPN, 45V, 500mA, 200mW, SOT-323, SMD NEXPERIA The BC817 series 500mA NPN General Purpose Transistor suitable for use with general purpose switching and amplification. • High current • Low voltage • BC807 PNP complement
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NPN | 45V | 500mA | 200mW | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BCV62B,215
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SC16131 |
Bipolar Transistor Array, Dual PNP, 30V, -100mA, 250mW, 220hFE, SOT-143B NEXPERIA The BCV62B is a PNP general-purpose double Bipolar Transistor Array in a small surface-mount plastic package. It is designed for applications with working point independent of temperature and current mirrors. • Low current • Low voltage • Matched pairs • B...
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Dual PNP | - | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BSR16..
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SC16019 |
Bipolar (BJT) Single Transistor, PNP, -60V, -800mA, 350mW, SOT-23, SMD ONSEMI The BSR16 is a PNP Bipolar Transistor designed for use as a general purpose amplifier and switches requiring collector currents up to 500mA. • Sourced from Process 63 • -55 to 150°C Operating junction temperature range
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PNP | 60V | 800mA | 350mW | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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2N5416
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SC15811 |
Bipolar (BJT) Single Transistor, PNP, -300V, -1A, 1W, TO-39 MULTICOMP PRO The 2N5416 is a -300V Silicon PNP High Voltage Transistor ideal for high speed switching and linear amplifier appliances in military, industrial and commercial equipment. • Collector-base voltage(Vcbo = 350V) • Emitter-base voltage(Vebo = 6V) • Multicomp P...
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PNP | 300V | 1A | 1W | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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FMMT458
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SC16056 |
Bipolar (BJT) Single Transistor, NPN, 400V, 225mA, 500mW, SOT-23, SMD DIODES INC. FMMT458 is a NPN high voltage transistor in a 3 pin SOT23 package. • BVCEO is greater than 400V • IC = 225mA high continuous collector current • ICM = 1A peak pulse current • 500mW power dissipation • Excellent hFE characteristics up to 100mA • Complementa...
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NPN | 400V | 225mA | 500mW | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC846BLT3G
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SC16046 |
Bipolar (BJT) Single Transistor, NPN, 65V, 100mA, 225mW, SOT-23, SMD ONSEMI • Transistor Polarity : NPN • Collector Emitter Voltage Max : 65V • Continuous Collector Current : 100mA • Power Dissipation : 225mW
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NPN | 65V | 100mA | 225mW | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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PDTD123YT,215
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SC15947 |
Bipolar Pre-Biased / Digital Transistor, BRT, Single NPN, 50V, 500mA, 2.2 kohm, 10 kohm NEXPERIA The PDTD123YT is a 2.2 to 10kΩ NPN Resistor Equipped Transistor (RET) in a surface-mount plastic package. • Built-in bias resistors • Reduces component count • Simplifies circuit design • Reduces pick and place costs • ±10% Resistor ratio tolerance • PNP c...
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Single NPN | - | 500mA | 250mW | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC640TA
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SC15792 |
Bipolar (BJT) Single Transistor, PNP, -80V, -1A, 1W, TO-92 ONSEMI The BC640TA is a PNP Epitaxial Silicon Transistor designed for use in switching and amplifier applications. • Complement to BC639 • -55 to 150°C Operating junction temperature range
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PNP | 80V | 1A | 1W | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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FMMT591A
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SC16064 |
Transistor, PNP, SOT23 DIODES INC. The FMMT591A is a PNP silicon planar medium power Bipolar Transistor offers 350mΩ low equivalent on resistance RCE (sat) at 1A. • FMMT491A Complementary NPN type • -55 to 150°C Operating temperature range
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PNP | 40V | 1A | 500mW | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC850CLT1G
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SC16098 |
Bipolar (BJT) Single Transistor, NPN, 45V, 100mA, 225mW, SOT-23, SMD ONSEMI The BC850CLT1G is a NPN general purpose Bipolar Transistor designed for use in linear and switching applications. The device is housed in the package which is designed for lower power surface-mount applications. • Moisture sensitivity level-1 • AEC-Q101 qu...
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NPN | 45V | 100mA | 225mW |