Semiconductors - Discretes

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Transistor Polarity Collector Emitter Voltage Max Continuous Collector Current Power Dissipation Transistor Case Style Transistor Mounting No. of Pins Transition Frequency DC Current Gain hFE Min Operating Temperature Max Product Range Qualification
 
 
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ZTX453.
ZTX453. - NPN 120V 1A 1W

SCZTX453

NPN 120V 1A 1W

DIODES INC.

• Transistor Polarity : NPN • Collector Emitter Voltage Max : 100V • Continuous Collector Current : 1A • Power Dissipation : 1W • Transistor Case Style : E-Line • Transistor Mounting : Through Hole • No. of Pins : 3Pins • DC Current Gain hFE Min : 150hFE • Operating Temperature Max : 200°C

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NPN 100V 1A 1W E-Line Through Hole 3Pins - 150hFE 200°C - -
BAT754S
BAT754S - Small Signal Schottky Diode, Dual Series, 30 V, 200 mA, 260 mV, 600 mA, 125 °C

SC11302

Small Signal Schottky Diode, Dual Series, 30 V, 200 mA, 260 mV, 600 mA, 125 °C

NXP

The BAT754 series planar Schottky Barrier Diode with an integrated guard ring for stress protection, encapsulated in a small SOT23 (TO-236AB) surface-mounted device (SMD) plastic package. It is used for ultra high-speed switching, voltage clamping, line te...

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- - - - - - 3Pins - - 125°C BAT754 -
TIP2955
TIP2955 - Transistor, PNP, TO3P

SC06789

Transistor, PNP, TO3P

MULTICOMP PRO

The TIP2955 is a -60V Silicon PNP Complementary Power Transistor designed for general purpose amplifier and low speed switching applications. • DC current gain (hfe = 20 to 100 at Ic = 4A) • Collector-emitter saturation voltage(Vce (sat) = 1.1V maximum at ...

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PNP 60V 15A 90W TO-247 Through Hole 3Pins 2.5MHz 100hFE 150°C - -
1N5349BG
1N5349BG - Zener Single Diode, 12 V, 5 W, 017AA, 2 Pins, 200 °C, Through Hole

SC07176

Zener Single Diode, 12 V, 5 W, 017AA, 2 Pins, 200 °C, Through Hole

ONSEMI

The 1N53 series from On Semiconductor are axial leaded zener voltage regulators in 017AA package. • Zener voltage Vz range from 3.3V to 200V • Maximum power dissipation of 5W • Operating temperature range -65°C to 200°C • Maximum surge current IFSM range f...

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- - - 5W - - 2Pins - - 200°C 1N53 Series -
MJ15025G
MJ15025G - Transistor, PNP, TO3

SC06787

Transistor, PNP, TO3

ONSEMI

The MJ15025G is a -250V Silicon PNP Bipolar Power Transistor designed for high power audio, disk head positioners and other linear applications. • High DC current gain • High safe operating area • Collector-base voltage (Vcbo = 400V) • Emitter-base voltage...

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PNP 250V 16A 250W TO-3 Through Hole 2Pins 4MHz 60hFE 200°C - -
ZVN4424A
ZVN4424A - Power MOSFET, N Channel, 240 V, 260 mA, 6 ohm, TO-226AA, Through Hole

SC06970

Power MOSFET, N Channel, 240 V, 260 mA, 6 ohm, TO-226AA, Through Hole

DIODES INC.

The ZVN4424A is a 240V E-Line N-channel Enhancement Mode Vertical DMOS FET featuring low threshold and fast switching. The MOSFET is ideal for earth recall and dialling switches, electronic hook switches, telecoms and high voltage DC-DC converters.

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- - - 570mW TO-226AA Through Hole 3Pins - - 150°C - -
BZX79-C8V2.
BZX79-C8V2. - Zener Single Diode, 8.2 V, 500 mW, DO-35, 2 Pins, 200 °C

SC05701

Zener Single Diode, 8.2 V, 500 mW, DO-35, 2 Pins, 200 °C

NXP

• Power Dissipation : 500mW • No. of Pins : 2Pins • Operating Temperature Max : 200°C • Product Range : BZX79

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- - - 500mW - - 2Pins - - 200°C BZX79 -
MUR820G
MUR820G - Fast / Ultrafast Diode, 200 V, 8 A, Single, 975 mV, 35 ns, 100 A

SC07382

Fast / Ultrafast Diode, 200 V, 8 A, Single, 975 mV, 35 ns, 100 A

ONSEMI

The MUR820G is a SWITCHMODE™ Power Rectifier with moulded epoxy case. It is designed for use in switching power supplies, inverters and as free-wheeling diodes. • All external surfaces corrosion-resistant and terminal leads are readily solderable • Ultra-f...

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- - - - - - - - - 175°C - -
ZVP4424A
ZVP4424A - Power MOSFET, P Channel, 240 V, 200 mA, 15 ohm, TO-226AA, Through Hole

SC06977

Power MOSFET, P Channel, 240 V, 200 mA, 15 ohm, TO-226AA, Through Hole

DIODES INC.

The ZVP4424A is a -240V E-Line P-channel Enhancement Mode Vertical DMOS FET ideal for electronic hook switch. • Low threshold

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- - - 750mW TO-226AA Through Hole 3Pins - - 150°C - -
1N5343BG
1N5343BG - Zener Single Diode, 7.5 V, 5 W, 017AA, 2 Pins, 200 °C, Through Hole

SC07171

Zener Single Diode, 7.5 V, 5 W, 017AA, 2 Pins, 200 °C, Through Hole

ONSEMI

The 1N5333B series Surmetic™ Voltage Regulator Zener Diode with tight limits and better operating characteristics that reflect the superior capabilities of silicon-oxide passivated junctions. All this in an axial lead, transfer-moulded plastic package that...

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- - - 5W - - 2Pins - - 200°C 1N53 Series -
2N7002LT1G
2N7002LT1G - Power MOSFET, N Channel, 60 V, 115 mA, 7.5 ohm, SOT-23, Surface Mount

SC11038

Power MOSFET, N Channel, 60 V, 115 mA, 7.5 ohm, SOT-23, Surface Mount

ONSEMI

The 2N7002LT1G is a 60V N-channel small signal MOSFET capable of 300mW power dissipation and 115mA continuous drain current. • Halogen-free/BFR-free • ±20VDC Gate to source voltage • 60VDC Drain to gate voltage • 417°C/W Thermal resistance, junction to amb...

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- - - 200mW SOT-23 Surface Mount 3Pins - - 150°C - -
IRF1404PBF
IRF1404PBF - Power MOSFET, N Channel, 40 V, 162 A, 0.004 ohm, TO-220AB, Through Hole

SC11147

Power MOSFET, N Channel, 40 V, 162 A, 0.004 ohm, TO-220AB, Through Hole

INFINEON

The IRF1404PBF is a 40V single N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using advanced planar technology. • 175°C Operating temperature • Dynamic dV/dt rating • Fully avalanche rated • ...

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- - - 200W - Through Hole 3Pins - - 175°C - -
GF1B-E3/5CA
GF1B-E3/5CA - Standard Recovery Diode, 100 V, 1 A, Single, 1.1 V, 3 µs, 30 A

SC11333

Standard Recovery Diode, 100 V, 1 A, Single, 1.1 V, 3 µs, 30 A

VISHAY

The GF1B-E3/5CA is a surface-mount Glass-passivated Junction Rectifier with moulded epoxy over glass body and matte tin plated solderable leads. The cathode end is denoted by coloured band. It is suitable for use in general-purpose rectification of power s...

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- - - - - - 2Pins - - 175°C GF1B -
BC849B
BC849B - Transistor, NPN SOT23

SC06619

Transistor, NPN SOT23

ONSEMI

• Transistor Polarity : NPN • Collector Emitter Voltage Max : 30V • Continuous Collector Current : 100mA • Power Dissipation : 300mW • Transistor Case Style : SOT-23 • Transistor Mounting : Surface Mount • No. of Pins : 3Pins • DC Current Gain hFE Min : 200hFE • Operating Temperature Max : 150°C

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NPN 30V 100mA 300mW SOT-23 Surface Mount 3Pins - 200hFE 150°C - -
BS170P
BS170P - Power MOSFET, N Channel, 60 V, 270 mA, 5 ohm, E-Line, Through Hole

SC06957

Power MOSFET, N Channel, 60 V, 270 mA, 5 ohm, E-Line, Through Hole

DIODES INC.

The BS170P is a N-channel enhancement-mode Vertical DMOSFET with moulded plastic case and solderable matte tin plated terminals as per MIL-STD-202 standard. • Halogen-free, Green device • Qualified to AEC-Q101 standards for high reliability • UL94V-0 Flamm...

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- - - 625mW E-Line Through Hole 3Pins - - 150°C - -
BAT54C
BAT54C - Small Signal Diode, 30 V, 200 mA, 320 mV, 5 ns, 600 mA

SC11298

Small Signal Diode, 30 V, 200 mA, 320 mV, 5 ns, 600 mA

NXP

• No. of Pins : 3Pins • Operating Temperature Max : 150°C

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- - - - - - 3Pins - - 150°C - -
TS820-600T
TS820-600T - Thyristor, 8A, 600V, TO220AB

SC11512

Thyristor, 8A, 600V, TO220AB

STMICROELECTRONICS

The TS820-600T is a Sensitive Silicon Controlled Rectifier, suitable to fit all modes of control found in applications such as overvoltage crowbar protection, motor control circuits in power tools and kitchen aids, inrush current limiting circuits, capacit...

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- - - - - - 3Pins - - 125°C - -
MPSA14
MPSA14 - Darlington Transistor, TO92

SC10647

Darlington Transistor, TO92

MULTICOMP PRO

The MPSA14 is a NPN Darlington Transistor with 30V collector emitter voltage and 10V emitter base voltage. • -55 to 150°C Operating junction temperature range • Multicomp Pro products are rated 4.6 out of 5 stars • 12 month limited warranty *view Terms & C...

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NPN - - - - Through Hole 3Pins - - 150°C Multicomp Pro Bipolar Transistors NPN -
BZV55-C18
BZV55-C18 - Zener Single Diode, 18 V, 500 mW, SOD-80C, 2 Pins, 200 °C, Surface Mount

SC11219

Zener Single Diode, 18 V, 500 mW, SOD-80C, 2 Pins, 200 °C, Surface Mount

NXP

• Power Dissipation : 500mW • No. of Pins : 2Pins • Operating Temperature Max : 200°C • Product Range : BZV55

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- - - 500mW - - 2Pins - - 200°C BZV55 -
1N5369BG
1N5369BG - Zener Single Diode, 51 V, 5 W, 017AA, 2 Pins, 200 °C, Through Hole

SC07195

Zener Single Diode, 51 V, 5 W, 017AA, 2 Pins, 200 °C, Through Hole

ONSEMI

The 1N5369BG is a Surmetic™ 40 Voltage Regulator Zener Diode with tight limits and better operating characteristics that reflect the superior capabilities of silicon-oxide passivated junctions. All this in an axial lead, transfer-moulded plastic package th...

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- - - 5W - - 2Pins - - 200°C 1N53 Series -
BY206GP-E3/54
BY206GP-E3/54 - Standard Recovery Diode, 350 V, 400 mA, Single, 1.5 V, 1 µs, 15 A

SC07331

Standard Recovery Diode, 350 V, 400 mA, Single, 1.5 V, 1 µs, 15 A

VISHAY

The BY206GP-E3/54 is a clamper/damper Glass-passivated Fast Plastic Rectifier with moulded epoxy over glass body case and solderable matte tin-plated leads. It is suitable use in high-voltage rectification of power supplies, inverters, converters and freew...

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- - - - - - 2Pins - - 175°C BY206 -
BCV27
BCV27 - Transistor, NPN SOT23

SC06621

Transistor, NPN SOT23

ONSEMI

The BCV27 is a NPN Darlington Transistor designed for applications requiring extremely high current gain at currents to 1A. • Sourced from Process 05 • -55 to 150°C Operating junction temperature range

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NPN - - - - Surface Mount 3Pins - - 150°C - -
BZT03C30-TR
BZT03C30-TR - Zener Single Diode, 30 V, 3.25 W, SOD-57, 2 Pins, 175 °C, Through Hole

SC07139

Zener Single Diode, 30 V, 3.25 W, SOD-57, 2 Pins, 175 °C, Through Hole

VISHAY

The BZT03 series Zener Diode with glass passivated junction and hermetically sealed package. It is used in medium power voltage regulators and medium power transient suppression circuits. • Clamping time in picoseconds • UL94V-0 Moulding compound flammabil...

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- - - 3.25W - - 2Pins - - 175°C BZT03 Series AEC-Q101
IRFR9024PBF
IRFR9024PBF - Power MOSFET, P Channel, 60 V, 8.8 A, 0.28 ohm, TO-252 (DPAK), Surface Mount

SC11199

Power MOSFET, P Channel, 60 V, 8.8 A, 0.28 ohm, TO-252 (DPAK), Surface Mount

VISHAY

The IRFR9024PBF is a -60V P-channel Power MOSFET designed for fast switching, rugged device design and low on-resistance. The DPAK is designed for surface mounting using vapour phase, infrared or wave soldering techniques. The straight lead version (IRFU, ...

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- - - 42W TO-252 (DPAK) Surface Mount 3Pins - - 150°C - -
IRF540ZPBF
IRF540ZPBF - Power MOSFET, N Channel, 100 V, 36 A, 0.0265 ohm, TO-220AB, Through Hole

SC11108

Power MOSFET, N Channel, 100 V, 36 A, 0.0265 ohm, TO-220AB, Through Hole

INFINEON

The IRF540ZPBF is a 100V single N-channel HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching ...

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- - - 92W - Through Hole 3Pins - - 175°C - -