Semiconductors - Discretes
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Manufacturer Part No | Order Code | Description / Manufacturer | Availability | Price For |
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Quantity | Repetitive Peak Reverse Voltage | Average Forward Current | Forward Voltage Max | Reverse Recovery Time | Forward Surge Current | Diode Case Style | No. of Pins | Diode Mounting | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BAT54CW
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SC11305 |
Small Signal Diode, 30 V, 200 mA, 320 mV, 5 ns, 600 mA NXP • Repetitive Peak Reverse Voltage : 30V • Average Forward Current : 200mA • Forward Voltage Max : 320mV • Reverse Recovery Time : 5ns • Forward Surge Current : 600mA • Diode Case Style : SOT-323 • No. of Pins : 3Pins • Diode Mounting : Surface Mount
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30V | 200mA | 320mV | 5ns | 600mA | SOT-323 | 3Pins | Surface Mount | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BSS84P
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SC07003 |
Power MOSFET, P Channel, 60 V, 170 mA, 8 ohm, SOT-23, Surface Mount INFINEON • No. of Pins : 3Pins
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IRFP32N50KPBF
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SC11173 |
Power MOSFET, N Channel, 500 V, 32 A, 0.16 ohm, TO-247AC, Through Hole VISHAY The IRFP32N50KPBF is a 500V N-channel SMPS MOSFET with low gate charge Qg results in simple drive requirement. It operates at high frequency with hard switching application. Suitable for SMPS and high speed power switching and motor drive applications. • E...
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FQP12N60C
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SC11098 |
Power MOSFET, N Channel, 600 V, 12 A, 0.53 ohm, TO-220, Through Hole ONSEMI The FQP12N60C is a 600V N-channel QFET® enhancement mode Power MOSFET is produced using planar stripe and DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance and wit...
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1+ €2.3681 (€2.91) 25+ €2.2491 (€2.77) 100+ €2.1539 (€2.65) 250+ €1.9992 (€2.46) |
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IPB60R099CP
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SC11156 |
Power MOSFET, N Channel, 650 V, 31 A, 0.09 ohm, TO-263 (D2PAK), Surface Mount INFINEON • No. of Pins : 3Pins
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BTA24-800BWRG
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SC11514 |
Triac, 25A, 800V, TO220AB STMICROELECTRONICS The BTA24-800BWRG is a 3-pin Snubberless Insulated TRIAC for general purpose AC switching and can be used as ON/OFF function. The BTA series TRIAC provides voltage insulated tab by using an internal ceramic pad. • High commutation performance • Low thermal...
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BC817-25
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SC06613 |
Transistor, NPN, SOT23 NXP • No. of Pins : 3Pins
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BZX85-C11
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SC07116 |
Zener Single Diode, 11 V, 1 W, DO-41 (DO-204AL), 2 Pins, 200 °C, Through Hole ONSEMI The BZX85-C11 is a Zener Diode with glass case. This product is general usage and suitable for many different applications. • -65 to 200°C Operating and storage temperature range
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- | - | - | - | - | DO-41 (DO-204AL) | 2Pins | Through Hole | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BTA12-600BRG
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SC07583 |
Triac, 12A, 600V, TO220AB STMICROELECTRONICS The BTA12-600BRG is a 3-pin Standard Insulated TRIAC for general purpose AC switching and can be used as ON/OFF function. The BTA series TRIAC provides voltage insulated tab by using an internal ceramic pad. • High commutation performance • Low thermal res...
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1+ €1.4042 (€1.73) 10+ €1.1662 (€1.43) 100+ €0.9996 (€1.23) |
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- | - | - | - | - | - | 3Pins | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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ZTX603
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SC10995 |
Darlington Transistor, E-Line DIODES INC. The ZTX603 is a 80V E-Line Silicon NPN Planar Medium Power Darlington Transistor with silicone encapsulate that is rated to a much higher temperature than the common epoxies. It feature allows higher temperature operation, higher power rating and much high...
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5+ €0.714 (€0.88) 25+ €0.6545 (€0.81) 100+ €0.5593 (€0.69) |
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FDN357N
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SC11040 |
Power MOSFET, N Channel, 30 V, 2.5 A, 0.053 ohm, SOT-23, Surface Mount ONSEMI The FDN357N is a SuperSOTâ„¢-3 N-channel logic level enhancement-mode Power FET produced using high cell density DMOS technology. This very high density process is especially tailored to minimize ON-state resistance. It is particularly suited for low voltage...
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S3M
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SC11347 |
Standard Recovery Diode, 1 kV, 3 A, Single, 1.15 V, 2.5 µs, 100 A ONSEMI The S3M is a General Purpose Rectifier with glass passivated junction. UL94V-0 flammability. • 2.6W Maximum power dissipation • 100°C/W Junction-to-ambient thermal resistance • 60pF Typical total capacitance • 2.5μs Maximum reverse recovery time
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1kV | 3A | 1.15V | 2.5µs | 100A | DO-214AB (SMC) | 2Pins | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BZX79-C6V8.
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SC05699 |
Zener Single Diode, 6.8 V, 500 mW, DO-35, 2 Pins, 200 °C NXP • Diode Case Style : DO-35 • No. of Pins : 2Pins
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- | - | - | - | - | DO-35 | 2Pins | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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NDT3055L
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SC11043 |
Power MOSFET, N Channel, 60 V, 4 A, 0.07 ohm, SOT-223, Surface Mount ONSEMI The NDT3055L is a N-channel logic level enhancement mould MOSFET using high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance and withstand hig...
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IRF630.
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SCIRF630 |
Power MOSFET, N Channel, 200 V, 10 A, 0.4 ohm, TO-220, Through Hole STMICROELECTRONICS • No. of Pins : 3Pins
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1N5373BG
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SC07199 |
Zener Single Diode, 68 V, 5 W, 017AA, 2 Pins, 200 °C, Through Hole ONSEMI The 1N5373BG is a Surmetic™ 40 Voltage Regulator Zener Diode with tight limits and better operating characteristics that reflect the superior capabilities of silicon-oxide passivated junctions. All this in an axial lead, transfer-moulded plastic package th...
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- | - | - | - | - | 017AA | 2Pins | Through Hole | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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VS-2KBB10R
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SC07480 |
Bridge Rectifier, Single Phase, 100 V, 1.9 A, 4 Pins, 1.1 V VISHAY The VS-2KBB10R is a 4-pin single-phase Bridge Rectifier Diode assembly consisting of four silicon diodes in a plastic encapsulation, intended for general applications. • Suitable for printed circuit board mounting • Leads on standard 2.54mm grid • Compact ...
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100V | 1.9A | 1.1V | - | 50A | - | 4Pins | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BZX79-C39.
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SC05715 |
Zener Single Diode, 39 V, 500 mW, DO-35, 2 Pins, 200 °C NXP • Diode Case Style : DO-35 • No. of Pins : 2Pins
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- | - | - | - | - | DO-35 | 2Pins | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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ULN2804A
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SC08608 |
Darlington Array 8 NPN, 2804, DIP18 STMICROELECTRONICS The ULN2804A from STMicroelectronics is a through hole eight darlington array in DIP package. Array contains eight darlington transistors with common emitters and integral suppression diodes for inductive loads. Each darlington features peak load current r...
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- | - | - | - | - | - | 18Pins | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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TIP147
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SC08147 |
Darlington Transistor, TO247 MULTICOMP PRO The TIP147 is a -100V PNP Darlington Transistor designed for general purpose amplifier and low speed switching applications. • Monolithic construction with built-in base-emitter shunt resistors • Collector-emitter sustaining voltage (Vceo (sus) = 100V mini...
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MURS320T3G
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SC07379 |
Fast / Ultrafast Diode, 200 V, 3 A, Single, 890 mV, 35 ns, 100 A ONSEMI The MURS320T3G is a surface mount ultrafast Power Rectifier with an epoxy molded case, all external surfaces corrosion-resistant and terminal leads are readily solderable finish. This series employs the state-of-the-art epitaxial construction with oxide pa...
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200V | 3A | 890mV | 35ns | 100A | DO-214AB (SMC) | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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STP24NF10.
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SC06020 |
Power MOSFET, N Channel, 100 V, 26 A, 0.055 ohm, TO-220, Through Hole STMICROELECTRONICS • No. of Pins : 3Pins
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MJ21193G
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SC06826 |
Transistor, PNP, TO3 ONSEMI The MJ21193G is a -250V Silicon PNP Bipolar Power Transistor that utilizes perforated emitter technology and is specifically designed for high power audio output, disk head positioners and linear applications. • Total harmonic distortion characterized • Hi...
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GBU403
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SC09277 |
Bridge Rectifier, Glass Passivated, Single Phase, 200 V, 4 A, SIP, 4 Pins, 1 V TAIWAN SEMICONDUCTOR The GBU403 is a 4-pin single-phase glass passivated Standard Bridge Rectifier Diode with moulded plastic body case. It has terminals leads solderable per MIL-STD- 750, Method 2026 and high temperature soldering guaranteed 250°C/10 seconds/0.375-inch lead l...
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200V | 4A | 1V | - | 150A | - | 4Pins | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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2N6405G
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SC07554 |
Thyristor, 16A, 800V, TO220 ONSEMI The 2N6405G is a 3-pin Reverse Blocking Thyristor for half-wave AC control applications, such as wherever solid-state devices are needed. The 2N6400 series thyristor has glass passivated junctions with centre gate geometry for greater parameter uniformity ...
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