Semiconductors - Discretes

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Repetitive Peak Reverse Voltage Average Forward Current Forward Voltage Max Reverse Recovery Time Forward Surge Current Diode Case Style No. of Pins Diode Mounting
 
 
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BAT54CW
BAT54CW - Small Signal Diode, 30 V, 200 mA, 320 mV, 5 ns, 600 mA

SC11305

Small Signal Diode, 30 V, 200 mA, 320 mV, 5 ns, 600 mA

NXP

• Repetitive Peak Reverse Voltage : 30V • Average Forward Current : 200mA • Forward Voltage Max : 320mV • Reverse Recovery Time : 5ns • Forward Surge Current : 600mA • Diode Case Style : SOT-323 • No. of Pins : 3Pins • Diode Mounting : Surface Mount

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30V 200mA 320mV 5ns 600mA SOT-323 3Pins Surface Mount
BSS84P
BSS84P - Power MOSFET, P Channel, 60 V, 170 mA, 8 ohm, SOT-23, Surface Mount

SC07003

Power MOSFET, P Channel, 60 V, 170 mA, 8 ohm, SOT-23, Surface Mount

INFINEON

• No. of Pins : 3Pins

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IRFP32N50KPBF
IRFP32N50KPBF - Power MOSFET, N Channel, 500 V, 32 A, 0.16 ohm, TO-247AC, Through Hole

SC11173

Power MOSFET, N Channel, 500 V, 32 A, 0.16 ohm, TO-247AC, Through Hole

VISHAY

The IRFP32N50KPBF is a 500V N-channel SMPS MOSFET with low gate charge Qg results in simple drive requirement. It operates at high frequency with hard switching application. Suitable for SMPS and high speed power switching and motor drive applications. • E...

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FQP12N60C
FQP12N60C - Power MOSFET, N Channel, 600 V, 12 A, 0.53 ohm, TO-220, Through Hole

SC11098

Power MOSFET, N Channel, 600 V, 12 A, 0.53 ohm, TO-220, Through Hole

ONSEMI

The FQP12N60C is a 600V N-channel QFET® enhancement mode Power MOSFET is produced using planar stripe and DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance and wit...

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IPB60R099CP
IPB60R099CP - Power MOSFET, N Channel, 650 V, 31 A, 0.09 ohm, TO-263 (D2PAK), Surface Mount

SC11156

Power MOSFET, N Channel, 650 V, 31 A, 0.09 ohm, TO-263 (D2PAK), Surface Mount

INFINEON

• No. of Pins : 3Pins

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BTA24-800BWRG
BTA24-800BWRG - Triac, 25A, 800V, TO220AB

SC11514

Triac, 25A, 800V, TO220AB

STMICROELECTRONICS

The BTA24-800BWRG is a 3-pin Snubberless Insulated TRIAC for general purpose AC switching and can be used as ON/OFF function. The BTA series TRIAC provides voltage insulated tab by using an internal ceramic pad. • High commutation performance • Low thermal...

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BC817-25
BC817-25 - Transistor, NPN, SOT23

SC06613

Transistor, NPN, SOT23

NXP

• No. of Pins : 3Pins

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BZX85-C11
BZX85-C11 - Zener Single Diode, 11 V, 1 W, DO-41 (DO-204AL), 2 Pins, 200 °C, Through Hole

SC07116

Zener Single Diode, 11 V, 1 W, DO-41 (DO-204AL), 2 Pins, 200 °C, Through Hole

ONSEMI

The BZX85-C11 is a Zener Diode with glass case. This product is general usage and suitable for many different applications. • -65 to 200°C Operating and storage temperature range

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- - - - - DO-41 (DO-204AL) 2Pins Through Hole
BTA12-600BRG
BTA12-600BRG - Triac, 12A, 600V, TO220AB

SC07583

Triac, 12A, 600V, TO220AB

STMICROELECTRONICS

The BTA12-600BRG is a 3-pin Standard Insulated TRIAC for general purpose AC switching and can be used as ON/OFF function. The BTA series TRIAC provides voltage insulated tab by using an internal ceramic pad. • High commutation performance • Low thermal res...

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ZTX603
ZTX603 - Darlington Transistor, E-Line

SC10995

Darlington Transistor, E-Line

DIODES INC.

The ZTX603 is a 80V E-Line Silicon NPN Planar Medium Power Darlington Transistor with silicone encapsulate that is rated to a much higher temperature than the common epoxies. It feature allows higher temperature operation, higher power rating and much high...

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FDN357N
FDN357N - Power MOSFET, N Channel, 30 V, 2.5 A, 0.053 ohm, SOT-23, Surface Mount

SC11040

Power MOSFET, N Channel, 30 V, 2.5 A, 0.053 ohm, SOT-23, Surface Mount

ONSEMI

The FDN357N is a SuperSOTâ„¢-3 N-channel logic level enhancement-mode Power FET produced using high cell density DMOS technology. This very high density process is especially tailored to minimize ON-state resistance. It is particularly suited for low voltage...

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S3M
S3M - Standard Recovery Diode, 1 kV, 3 A, Single, 1.15 V, 2.5 µs, 100 A

SC11347

Standard Recovery Diode, 1 kV, 3 A, Single, 1.15 V, 2.5 µs, 100 A

ONSEMI

The S3M is a General Purpose Rectifier with glass passivated junction. UL94V-0 flammability. • 2.6W Maximum power dissipation • 100°C/W Junction-to-ambient thermal resistance • 60pF Typical total capacitance • 2.5μs Maximum reverse recovery time

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1kV 3A 1.15V 2.5µs 100A DO-214AB (SMC) 2Pins -
BZX79-C6V8.
BZX79-C6V8. - Zener Single Diode, 6.8 V, 500 mW, DO-35, 2 Pins, 200 °C

SC05699

Zener Single Diode, 6.8 V, 500 mW, DO-35, 2 Pins, 200 °C

NXP

• Diode Case Style : DO-35 • No. of Pins : 2Pins

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NDT3055L
NDT3055L - Power MOSFET, N Channel, 60 V, 4 A, 0.07 ohm, SOT-223, Surface Mount

SC11043

Power MOSFET, N Channel, 60 V, 4 A, 0.07 ohm, SOT-223, Surface Mount

ONSEMI

The NDT3055L is a N-channel logic level enhancement mould MOSFET using high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance and withstand hig...

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- - - - - - 4Pins -
IRF630.
IRF630. - Power MOSFET, N Channel, 200 V, 10 A, 0.4 ohm, TO-220, Through Hole

SCIRF630

Power MOSFET, N Channel, 200 V, 10 A, 0.4 ohm, TO-220, Through Hole

STMICROELECTRONICS

• No. of Pins : 3Pins

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1N5373BG
1N5373BG - Zener Single Diode, 68 V, 5 W, 017AA, 2 Pins, 200 °C, Through Hole

SC07199

Zener Single Diode, 68 V, 5 W, 017AA, 2 Pins, 200 °C, Through Hole

ONSEMI

The 1N5373BG is a Surmeticâ„¢ 40 Voltage Regulator Zener Diode with tight limits and better operating characteristics that reflect the superior capabilities of silicon-oxide passivated junctions. All this in an axial lead, transfer-moulded plastic package th...

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- - - - - 017AA 2Pins Through Hole
VS-2KBB10R
VS-2KBB10R - Bridge Rectifier, Single Phase, 100 V, 1.9 A, 4 Pins, 1.1 V

SC07480

Bridge Rectifier, Single Phase, 100 V, 1.9 A, 4 Pins, 1.1 V

VISHAY

The VS-2KBB10R is a 4-pin single-phase Bridge Rectifier Diode assembly consisting of four silicon diodes in a plastic encapsulation, intended for general applications. • Suitable for printed circuit board mounting • Leads on standard 2.54mm grid • Compact ...

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100V 1.9A 1.1V - 50A - 4Pins -
BZX79-C39.
BZX79-C39. - Zener Single Diode, 39 V, 500 mW, DO-35, 2 Pins, 200 °C

SC05715

Zener Single Diode, 39 V, 500 mW, DO-35, 2 Pins, 200 °C

NXP

• Diode Case Style : DO-35 • No. of Pins : 2Pins

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ULN2804A
ULN2804A - Darlington Array 8 NPN, 2804, DIP18

SC08608

Darlington Array 8 NPN, 2804, DIP18

STMICROELECTRONICS

The ULN2804A from STMicroelectronics is a through hole eight darlington array in DIP package. Array contains eight darlington transistors with common emitters and integral suppression diodes for inductive loads. Each darlington features peak load current r...

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- - - - - - 18Pins -
TIP147
TIP147 - Darlington Transistor, TO247

SC08147

Darlington Transistor, TO247

MULTICOMP PRO

The TIP147 is a -100V PNP Darlington Transistor designed for general purpose amplifier and low speed switching applications. • Monolithic construction with built-in base-emitter shunt resistors • Collector-emitter sustaining voltage (Vceo (sus) = 100V mini...

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MURS320T3G
MURS320T3G - Fast / Ultrafast Diode, 200 V, 3 A, Single, 890 mV, 35 ns, 100 A

SC07379

Fast / Ultrafast Diode, 200 V, 3 A, Single, 890 mV, 35 ns, 100 A

ONSEMI

The MURS320T3G is a surface mount ultrafast Power Rectifier with an epoxy molded case, all external surfaces corrosion-resistant and terminal leads are readily solderable finish. This series employs the state-of-the-art epitaxial construction with oxide pa...

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200V 3A 890mV 35ns 100A DO-214AB (SMC) - -
STP24NF10.
STP24NF10. - Power MOSFET, N Channel, 100 V, 26 A, 0.055 ohm, TO-220, Through Hole

SC06020

Power MOSFET, N Channel, 100 V, 26 A, 0.055 ohm, TO-220, Through Hole

STMICROELECTRONICS

• No. of Pins : 3Pins

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MJ21193G
MJ21193G - Transistor, PNP, TO3

SC06826

Transistor, PNP, TO3

ONSEMI

The MJ21193G is a -250V Silicon PNP Bipolar Power Transistor that utilizes perforated emitter technology and is specifically designed for high power audio output, disk head positioners and linear applications. • Total harmonic distortion characterized • Hi...

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GBU403
GBU403 - Bridge Rectifier, Glass Passivated, Single Phase, 200 V, 4 A, SIP, 4 Pins, 1 V

SC09277

Bridge Rectifier, Glass Passivated, Single Phase, 200 V, 4 A, SIP, 4 Pins, 1 V

TAIWAN SEMICONDUCTOR

The GBU403 is a 4-pin single-phase glass passivated Standard Bridge Rectifier Diode with moulded plastic body case. It has terminals leads solderable per MIL-STD- 750, Method 2026 and high temperature soldering guaranteed 250°C/10 seconds/0.375-inch lead l...

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200V 4A 1V - 150A - 4Pins -
2N6405G
2N6405G - Thyristor, 16A, 800V, TO220

SC07554

Thyristor, 16A, 800V, TO220

ONSEMI

The 2N6405G is a 3-pin Reverse Blocking Thyristor for half-wave AC control applications, such as wherever solid-state devices are needed. The 2N6400 series thyristor has glass passivated junctions with centre gate geometry for greater parameter uniformity ...

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- - - - - - 3Pins -