Semiconductors - Discretes
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Manufacturer Part No | Order Code | Description / Manufacturer | Availability | Price For |
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Quantity | Transistor Polarity | Collector Emitter Voltage V(br)ceo | Power Dissipation Pd | DC Collector Current | RF Transistor Case | No. of Pins | DC Current Gain hFE | Transistor Mounting | Operating Temperature Max | Product Range | Qualification | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BCV26
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SC06604 |
Transistor, PNP SOT23 ONSEMI The BCV26 is a PNP Darlington Transistor designed for applications requiring extremely high current gain at currents to 800mA. • Sourced from Process 61 • -55 to 150°C Operating junction temperature range
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PNP | 30V | 350mW | 1.2A | SOT-23 | 3Pins | 10000hFE | Surface Mount | 150°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BAT54FILM
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SC11325 |
Small Signal Schottky Diode, 30 V, 300 mA, 400 mV, 1 A, 150 °C STMICROELECTRONICS The BAT54FILM is a 3-pin 30V surface-mount small signal Schottky Diode with dual common cathode configuration. It accepts low forward and reverse recovery times, low conduction and reverse losses and negligible switching losses. • Extremely fast switching ...
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- | - | - | - | - | 3Pins | - | - | 150°C | BAT54 Series | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRF4905PBF
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SC11119 |
Power MOSFET, P Channel, 55 V, 74 A, 0.02 ohm, TO-220AB, Through Hole INFINEON The IRF4905PBF is -55V single P channel HEXFET power MOSFET in TO-220AB package. This MOSFET features extremely low on resistance per silicon area, dynamic dv/dt rating, rugged, fast switching and fully avalanche rated as a result, power MOSFET are well kn...
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1+ €3.5462 (€4.36) 25+ €2.8322 (€3.48) 100+ €2.3443 (€2.88) 250+ €2.1063 (€2.59) |
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- | - | - | - | - | 3Pins | - | Through Hole | 175°C | HEXFET Series | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2N6073AG
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SC11510 |
Triac, 4A, 400V, TO126 ONSEMI The 2N6073AG is a Silicon Bidirectional Thyristor/Sensitive Triac designed primarily for full‐wave AC control applications, such as light dimmers, motor controls, heating controls and power supplies or wherever full‐wave silicon gate controlled solid‐state...
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1+ €0.714 (€0.88) 25+ €0.5593 (€0.69) 100+ €0.4284 (€0.53) |
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- | - | - | - | - | 3Pins | - | - | 110°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPP60R099CP
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SC11112 |
Power MOSFET, N Channel, 650 V, 31 A, 0.09 ohm, TO-220, Through Hole INFINEON The IPP60R099CP is a 650V N-channel CoolMOS™ Power MOSFET designed for hard and soft switching topologies, CCM PFC as well as PWM for ATX, notebook adapter PDP and LCD TV. The CoolMOS™ MOSFET offers a significant reduction of conduction, switching and driv...
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- | - | - | - | - | 3Pins | - | Through Hole | 150°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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1N5351BG
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SC07178 |
Zener Single Diode, 14 V, 5 W, 017AA, 2 Pins, 200 °C, Through Hole ONSEMI The 1N5333B series Surmetic™ Voltage Regulator Zener Diode with tight limits and better operating characteristics that reflect the superior capabilities of silicon-oxide passivated junctions. All this in an axial lead, transfer-moulded plastic package that...
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5+ €0.2856 (€0.35) 25+ €0.2499 (€0.31) 100+ €0.2142 (€0.26) |
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- | - | - | - | - | 2Pins | - | - | 200°C | 1N53 Series | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BZX79-C3V6.
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SC05692 |
Zener Single Diode, 3.6 V, 500 mW, DO-35, 2 Pins, 200 °C NXP • No. of Pins : 2Pins • Operating Temperature Max : 200°C • Product Range : BZX79
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- | - | - | - | - | 2Pins | - | - | 200°C | BZX79 | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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VS-2KBB80R
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SC07485 |
Bridge Rectifier, Single Phase, 800 V, 1.9 A, Through Hole, 4 Pins, 1.1 V VISHAY The VS-2KBB80R is a single-phase Bridge Rectifier with high surge current capability and compact construction. It consisting of four silicon diodes in a plastic encapsulation. This bridge rectifier is suitable for printed circuit board mounting. • 380V RMS...
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1+ €1.428 (€1.76) 10+ €1.2138 (€1.49) 100+ €0.9639 (€1.19) |
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- | - | - | - | - | 4Pins | - | - | 150°C | VS-2KBB Series | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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STPS20L60CT
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SC07418 |
Schottky Rectifier, 60 V, 20 A, Dual Common Cathode, TO-220AB, 3 Pins, 560 mV STMICROELECTRONICS The STPS20L60CT is a dual centre-tap Schottky Power Rectifier suitable for SWITCHMODE™ power supplies and high frequency DC to DC converters. This device is intended for use in high frequency inverters. • Low forward voltage drop • Negligible switching los...
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1+ €1.0948 (€1.35) 10+ €0.9877 (€1.21) |
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- | - | - | - | - | 3Pins | - | - | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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GBU805
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SC07511 |
Bridge Rectifier, Glass Passivated, Single Phase, 600 V, 8 A, SIP, 4 Pins, 1 V TAIWAN SEMICONDUCTOR The GBU805 is a single-phase glass passivated Bridge Rectifier with matte tin-plated lead terminals and UL94V-0 GBU case. The bridge rectifier features high case dielectric strength of 1500V, high surge current capability and polarity as marked on the body...
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1+ €0.714 (€0.88) 10+ €0.6188 (€0.76) 100+ €0.5474 (€0.67) |
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- | - | - | - | - | 4Pins | - | - | 150°C | GBU80x Series | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC177
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SC06647 |
Transistor, PNP, TO18 MULTICOMP PRO The BC177 is a -45V Silicon PNP Bipolar Planar Epitaxial Transistor with low power. • Collector-base voltage(Vcbo = 50V) • Emitter-base voltage(Vebo = 5V) • Multicomp Pro products are rated 4.6 out of 5 stars • 12 month limited warranty *view Terms & Condi...
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PNP | - | - | - | - | 3Pins | - | Through Hole | 200°C | Multicomp Pro Bipolar Transistors PNP | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC109
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SC06717 |
Transistor, NPN, TO18 MULTICOMP PRO The BC109 from Multicomp Pro are through hole, NPN low power, silicon planar epitaxial transistors in TO-18 metal can package. This device is used for switching and amplification. • Collector emitter voltage (Vce) of 25V • Continuous collector current (Ic)...
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5+ €0.4641 (€0.57) 25+ €0.3451 (€0.42) 100+ €0.2737 (€0.34) |
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NPN | - | - | - | - | 3Pins | - | Through Hole | 200°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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GBU6B-E3/45
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SC09281 |
Bridge Rectifier, Single Phase, 100 V, 6 A, SIP, 4 Pins, 1 V VISHAY The GBU6B-E3/45 is a 4-pin single-phase glass passivated Bridge Rectifier Diode with high surge current capability. It is used in general purpose AC/DC bridge full wave rectification for monitor, TV, printer, adapter, audio equipment and home appliances ap...
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1+ €1.2376 (€1.52) 10+ €1.1067 (€1.36) 100+ €0.9639 (€1.19) |
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- | - | - | - | - | 4Pins | - | - | 150°C | GBU6B | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BSS123
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SC06980 |
Power MOSFET, N Channel, 100 V, 170 mA, 1.2 ohm, SOT-23, Surface Mount ONSEMI The BSS123 is N channel logic level enhancement mode field effect transistor in SOT-23 package. This product is designed to minimize on state resistance while providing rugged, reliable and fast switching performance thus BSS123 are suited for low voltage,...
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- | - | - | - | - | 3Pins | - | Surface Mount | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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GBU4B-E3/45
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SC07496 |
Bridge Rectifier, Single Phase, 100 V, 4 A, SIP, 4 Pins, 1 V VISHAY The GBU4B-E3/45 is a 4-pin single-phase glass passivated Bridge Rectifier Diode with high surge current capability. It is used in general purpose AC/DC bridge full wave rectification for monitor, TV, printer, adapter, audio equipment and home appliances ap...
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- | - | - | - | - | 4Pins | - | - | 150°C | GBU4B | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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ZTX450
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SC10969 |
Transistor, NPN, E-Line DIODES INC. ZTX450 is a through hole, NPN silicon planar medium power transistor in E-Line (TO-92 Compatible) package. • Collector to emitter voltage (Vce) of 45V • Collector to base voltage of 60V • Power dissipation (Pd) of 1W • Continuous collector current of 1A • ...
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1+ €0.6069 (€0.75) 10+ €0.5117 (€0.63) 100+ €0.3808 (€0.47) |
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NPN | - | - | - | - | 3Pins | - | Through Hole | 200°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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TIP120
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SC11000 |
Darlington Transistor, TO220 MULTICOMP PRO The TIP120 from Multicomp Pro are through hole, darlington transistor in TO-220 package. This transistor is used for low speed switching and amplification. • Collector emitter voltage (Vce) of 60V • Continuous collector current (Ic) of 5A • Power dissipati...
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NPN | 60V | 65W | 5A | TO-220 | 3Pins | 1000hFE | Through Hole | 150°C | Multicomp Pro Bipolar Transistor | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRF820PBF
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SC11107 |
Power MOSFET, N Channel, 500 V, 2.5 A, 3 ohm, TO-220AB, Through Hole VISHAY The IRF820PBF is a 500V N-channel Power MOSFET, third generation power MOSFET provides the designer with the best combination of fast switching, ruggedized device design and low on-resistance. The package is universally preferred for all commercial-industr...
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- | - | - | - | - | 3Pins | - | Through Hole | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRFZ34NPBF
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SC08250 |
Power MOSFET, N Channel, 55 V, 29 A, 0.04 ohm, TO-220AB, Through Hole INFINEON The IRFZ34NPBF is a 55V single N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using advanced planar technology. • 175°C Operating temperature • Dynamic dV/dt rating • Fully avalanche rated
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- | - | - | - | - | 3Pins | - | Through Hole | 175°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRFP150N
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SC06218 |
Power MOSFET, N Channel, 100 V, 39 A, 0.036 ohm, TO-247AC, Through Hole INFINEON • No. of Pins : 3Pins • Transistor Mounting : Through Hole
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- | - | - | - | - | 3Pins | - | Through Hole | - | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BZX85-C16
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SC07120 |
Zener Single Diode, 16 V, 1 W, DO-41 (DO-204AL), 2 Pins, 200 °C, Through Hole ONSEMI The BZX85-C16 is a Zener Diode with glass case. This product is general usage and suitable for many different applications. • -65 to 200°C Operating and storage temperature range
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- | - | - | - | - | 2Pins | - | - | 200°C | BZX85 Series | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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FMMT617
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SC06628 |
Transistor, NPN, SOT23 DIODES INC. The FMMT617 is a NPN silicon power switching Bipolar Transistor offers 625mW power dissipation and extremely low saturation voltage. • 12A Peak pulse current • Excellent hFE characteristics up to 12A • Extremely low equivalent on resistance • PNP complemen...
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NPN | - | - | - | - | 3Pins | - | Surface Mount | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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LS4148
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SC07298 |
Small Signal Diode, 100 V, 150 mA, 50 Pack VISHAY • No. of Pins : 2Pins
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- | - | - | - | - | 2Pins | - | - | - | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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FQP17P06
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SC08206 |
Power MOSFET, P Channel, 60 V, 17 A, 0.12 ohm, TO-220, Through Hole ONSEMI The FQP17P06 is a -60V P-channel QFET® enhancement mode Power MOSFET is produced using planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance and to provide superior switching performan...
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- | - | - | - | - | 3Pins | - | Through Hole | 175°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC847C
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SC06615 |
Transistor, NPN, SOT23 NXP • Transistor Polarity : NPN • No. of Pins : 3Pins • Transistor Mounting : Surface Mount • Operating Temperature Max : 150°C
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NPN | - | - | - | - | 3Pins | - | Surface Mount | 150°C | - | - |