Semiconductors - Discretes

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Transistor Polarity Collector Emitter Voltage V(br)ceo Power Dissipation Pd DC Collector Current RF Transistor Case No. of Pins DC Current Gain hFE Transistor Mounting Operating Temperature Max Product Range Qualification
 
 
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BCV26
BCV26 - Transistor, PNP SOT23

SC06604

Transistor, PNP SOT23

ONSEMI

The BCV26 is a PNP Darlington Transistor designed for applications requiring extremely high current gain at currents to 800mA. • Sourced from Process 61 • -55 to 150°C Operating junction temperature range

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PNP 30V 350mW 1.2A SOT-23 3Pins 10000hFE Surface Mount 150°C - -
BAT54FILM
BAT54FILM - Small Signal Schottky Diode, 30 V, 300 mA, 400 mV, 1 A, 150 °C

SC11325

Small Signal Schottky Diode, 30 V, 300 mA, 400 mV, 1 A, 150 °C

STMICROELECTRONICS

The BAT54FILM is a 3-pin 30V surface-mount small signal Schottky Diode with dual common cathode configuration. It accepts low forward and reverse recovery times, low conduction and reverse losses and negligible switching losses. • Extremely fast switching ...

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- - - - - 3Pins - - 150°C BAT54 Series -
IRF4905PBF
IRF4905PBF - Power MOSFET, P Channel, 55 V, 74 A, 0.02 ohm, TO-220AB, Through Hole

SC11119

Power MOSFET, P Channel, 55 V, 74 A, 0.02 ohm, TO-220AB, Through Hole

INFINEON

The IRF4905PBF is -55V single P channel HEXFET power MOSFET in TO-220AB package. This MOSFET features extremely low on resistance per silicon area, dynamic dv/dt rating, rugged, fast switching and fully avalanche rated as a result, power MOSFET are well kn...

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- - - - - 3Pins - Through Hole 175°C HEXFET Series -
2N6073AG
2N6073AG - Triac, 4A, 400V, TO126

SC11510

Triac, 4A, 400V, TO126

ONSEMI

The 2N6073AG is a Silicon Bidirectional Thyristor/Sensitive Triac designed primarily for full‐wave AC control applications, such as light dimmers, motor controls, heating controls and power supplies or wherever full‐wave silicon gate controlled solid‐state...

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- - - - - 3Pins - - 110°C - -
IPP60R099CP
IPP60R099CP - Power MOSFET, N Channel, 650 V, 31 A, 0.09 ohm, TO-220, Through Hole

SC11112

Power MOSFET, N Channel, 650 V, 31 A, 0.09 ohm, TO-220, Through Hole

INFINEON

The IPP60R099CP is a 650V N-channel CoolMOS™ Power MOSFET designed for hard and soft switching topologies, CCM PFC as well as PWM for ATX, notebook adapter PDP and LCD TV. The CoolMOS™ MOSFET offers a significant reduction of conduction, switching and driv...

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- - - - - 3Pins - Through Hole 150°C - -
1N5351BG
1N5351BG - Zener Single Diode, 14 V, 5 W, 017AA, 2 Pins, 200 °C, Through Hole

SC07178

Zener Single Diode, 14 V, 5 W, 017AA, 2 Pins, 200 °C, Through Hole

ONSEMI

The 1N5333B series Surmetic™ Voltage Regulator Zener Diode with tight limits and better operating characteristics that reflect the superior capabilities of silicon-oxide passivated junctions. All this in an axial lead, transfer-moulded plastic package that...

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- - - - - 2Pins - - 200°C 1N53 Series -
BZX79-C3V6.
BZX79-C3V6. - Zener Single Diode, 3.6 V, 500 mW, DO-35, 2 Pins, 200 °C

SC05692

Zener Single Diode, 3.6 V, 500 mW, DO-35, 2 Pins, 200 °C

NXP

• No. of Pins : 2Pins • Operating Temperature Max : 200°C • Product Range : BZX79

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- - - - - 2Pins - - 200°C BZX79 -
VS-2KBB80R
VS-2KBB80R - Bridge Rectifier, Single Phase, 800 V, 1.9 A, Through Hole, 4 Pins, 1.1 V

SC07485

Bridge Rectifier, Single Phase, 800 V, 1.9 A, Through Hole, 4 Pins, 1.1 V

VISHAY

The VS-2KBB80R is a single-phase Bridge Rectifier with high surge current capability and compact construction. It consisting of four silicon diodes in a plastic encapsulation. This bridge rectifier is suitable for printed circuit board mounting. • 380V RMS...

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- - - - - 4Pins - - 150°C VS-2KBB Series -
STPS20L60CT
STPS20L60CT - Schottky Rectifier, 60 V, 20 A, Dual Common Cathode, TO-220AB, 3 Pins, 560 mV

SC07418

Schottky Rectifier, 60 V, 20 A, Dual Common Cathode, TO-220AB, 3 Pins, 560 mV

STMICROELECTRONICS

The STPS20L60CT is a dual centre-tap Schottky Power Rectifier suitable for SWITCHMODE™ power supplies and high frequency DC to DC converters. This device is intended for use in high frequency inverters. • Low forward voltage drop • Negligible switching los...

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- - - - - 3Pins - - 150°C - -
GBU805
GBU805 - Bridge Rectifier, Glass Passivated, Single Phase, 600 V, 8 A, SIP, 4 Pins, 1 V

SC07511

Bridge Rectifier, Glass Passivated, Single Phase, 600 V, 8 A, SIP, 4 Pins, 1 V

TAIWAN SEMICONDUCTOR

The GBU805 is a single-phase glass passivated Bridge Rectifier with matte tin-plated lead terminals and UL94V-0 GBU case. The bridge rectifier features high case dielectric strength of 1500V, high surge current capability and polarity as marked on the body...

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- - - - - 4Pins - - 150°C GBU80x Series -
BC177
BC177 - Transistor, PNP, TO18

SC06647

Transistor, PNP, TO18

MULTICOMP PRO

The BC177 is a -45V Silicon PNP Bipolar Planar Epitaxial Transistor with low power. • Collector-base voltage(Vcbo = 50V) • Emitter-base voltage(Vebo = 5V) • Multicomp Pro products are rated 4.6 out of 5 stars • 12 month limited warranty *view Terms & Condi...

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PNP - - - - 3Pins - Through Hole 200°C Multicomp Pro Bipolar Transistors PNP -
BC109
BC109 - Transistor, NPN, TO18

SC06717

Transistor, NPN, TO18

MULTICOMP PRO

The BC109 from Multicomp Pro are through hole, NPN low power, silicon planar epitaxial transistors in TO-18 metal can package. This device is used for switching and amplification. • Collector emitter voltage (Vce) of 25V • Continuous collector current (Ic)...

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NPN - - - - 3Pins - Through Hole 200°C - -
GBU6B-E3/45
GBU6B-E3/45 - Bridge Rectifier, Single Phase, 100 V, 6 A, SIP, 4 Pins, 1 V

SC09281

Bridge Rectifier, Single Phase, 100 V, 6 A, SIP, 4 Pins, 1 V

VISHAY

The GBU6B-E3/45 is a 4-pin single-phase glass passivated Bridge Rectifier Diode with high surge current capability. It is used in general purpose AC/DC bridge full wave rectification for monitor, TV, printer, adapter, audio equipment and home appliances ap...

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- - - - - 4Pins - - 150°C GBU6B -
BSS123
BSS123 - Power MOSFET, N Channel, 100 V, 170 mA, 1.2 ohm, SOT-23, Surface Mount

SC06980

Power MOSFET, N Channel, 100 V, 170 mA, 1.2 ohm, SOT-23, Surface Mount

ONSEMI

The BSS123 is N channel logic level enhancement mode field effect transistor in SOT-23 package. This product is designed to minimize on state resistance while providing rugged, reliable and fast switching performance thus BSS123 are suited for low voltage,...

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- - - - - 3Pins - Surface Mount 150°C - -
GBU4B-E3/45
GBU4B-E3/45 - Bridge Rectifier, Single Phase, 100 V, 4 A, SIP, 4 Pins, 1 V

SC07496

Bridge Rectifier, Single Phase, 100 V, 4 A, SIP, 4 Pins, 1 V

VISHAY

The GBU4B-E3/45 is a 4-pin single-phase glass passivated Bridge Rectifier Diode with high surge current capability. It is used in general purpose AC/DC bridge full wave rectification for monitor, TV, printer, adapter, audio equipment and home appliances ap...

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- - - - - 4Pins - - 150°C GBU4B -
ZTX450
ZTX450 - Transistor, NPN, E-Line

SC10969

Transistor, NPN, E-Line

DIODES INC.

ZTX450 is a through hole, NPN silicon planar medium power transistor in E-Line (TO-92 Compatible) package. • Collector to emitter voltage (Vce) of 45V • Collector to base voltage of 60V • Power dissipation (Pd) of 1W • Continuous collector current of 1A • ...

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NPN - - - - 3Pins - Through Hole 200°C - -
TIP120
TIP120 - Darlington Transistor, TO220

SC11000

Darlington Transistor, TO220

MULTICOMP PRO

The TIP120 from Multicomp Pro are through hole, darlington transistor in TO-220 package. This transistor is used for low speed switching and amplification. • Collector emitter voltage (Vce) of 60V • Continuous collector current (Ic) of 5A • Power dissipati...

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NPN 60V 65W 5A TO-220 3Pins 1000hFE Through Hole 150°C Multicomp Pro Bipolar Transistor -
IRF820PBF
IRF820PBF - Power MOSFET, N Channel, 500 V, 2.5 A, 3 ohm, TO-220AB, Through Hole

SC11107

Power MOSFET, N Channel, 500 V, 2.5 A, 3 ohm, TO-220AB, Through Hole

VISHAY

The IRF820PBF is a 500V N-channel Power MOSFET, third generation power MOSFET provides the designer with the best combination of fast switching, ruggedized device design and low on-resistance. The package is universally preferred for all commercial-industr...

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- - - - - 3Pins - Through Hole 150°C - -
IRFZ34NPBF
IRFZ34NPBF - Power MOSFET, N Channel, 55 V, 29 A, 0.04 ohm, TO-220AB, Through Hole

SC08250

Power MOSFET, N Channel, 55 V, 29 A, 0.04 ohm, TO-220AB, Through Hole

INFINEON

The IRFZ34NPBF is a 55V single N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using advanced planar technology. • 175°C Operating temperature • Dynamic dV/dt rating • Fully avalanche rated

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- - - - - 3Pins - Through Hole 175°C - -
IRFP150N
IRFP150N - Power MOSFET, N Channel, 100 V, 39 A, 0.036 ohm, TO-247AC, Through Hole

SC06218

Power MOSFET, N Channel, 100 V, 39 A, 0.036 ohm, TO-247AC, Through Hole

INFINEON

• No. of Pins : 3Pins • Transistor Mounting : Through Hole

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- - - - - 3Pins - Through Hole - - -
BZX85-C16
BZX85-C16 - Zener Single Diode, 16 V, 1 W, DO-41 (DO-204AL), 2 Pins, 200 °C, Through Hole

SC07120

Zener Single Diode, 16 V, 1 W, DO-41 (DO-204AL), 2 Pins, 200 °C, Through Hole

ONSEMI

The BZX85-C16 is a Zener Diode with glass case. This product is general usage and suitable for many different applications. • -65 to 200°C Operating and storage temperature range

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- - - - - 2Pins - - 200°C BZX85 Series -
FMMT617
FMMT617 - Transistor, NPN, SOT23

SC06628

Transistor, NPN, SOT23

DIODES INC.

The FMMT617 is a NPN silicon power switching Bipolar Transistor offers 625mW power dissipation and extremely low saturation voltage. • 12A Peak pulse current • Excellent hFE characteristics up to 12A • Extremely low equivalent on resistance • PNP complemen...

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NPN - - - - 3Pins - Surface Mount 150°C - -
LS4148
LS4148 - Small Signal Diode, 100 V, 150 mA, 50 Pack

SC07298

Small Signal Diode, 100 V, 150 mA, 50 Pack

VISHAY

• No. of Pins : 2Pins

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- - - - - 2Pins - - - - -
FQP17P06
FQP17P06 - Power MOSFET, P Channel, 60 V, 17 A, 0.12 ohm, TO-220, Through Hole

SC08206

Power MOSFET, P Channel, 60 V, 17 A, 0.12 ohm, TO-220, Through Hole

ONSEMI

The FQP17P06 is a -60V P-channel QFET® enhancement mode Power MOSFET is produced using planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance and to provide superior switching performan...

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- - - - - 3Pins - Through Hole 175°C - -
BC847C
BC847C - Transistor, NPN, SOT23

SC06615

Transistor, NPN, SOT23

NXP

• Transistor Polarity : NPN • No. of Pins : 3Pins • Transistor Mounting : Surface Mount • Operating Temperature Max : 150°C

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NPN - - - - 3Pins - Surface Mount 150°C - -