Semiconductors - Discretes

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  Manufacturer Part No Order Code Description / Manufacturer
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Channel Type Drain Source Voltage Vds Continuous Drain Current Id Drain Source On State Resistance Transistor Mounting Rds(on) Test Voltage Gate Source Threshold Voltage Max Power Dissipation No. of Pins Operating Temperature Max Product Range Qualification
 
 
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IRF9Z24NPBF
IRF9Z24NPBF - Power MOSFET, P Channel, 55 V, 12 A, 0.175 ohm, TO-220AB, Through Hole

SC11122

Power MOSFET, P Channel, 55 V, 12 A, 0.175 ohm, TO-220AB, Through Hole

INFINEON

The IRF9Z24NPBF is a -55V single P-channel HEXFET® Power MOSFET, fifth generation HEXFET utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized de...

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P Channel 55V 12A 0.175ohm Through Hole 10V 4V 45W 3Pins 175°C - -
2N2222A
2N2222A - Transistor, NPN, TO18

SC06714

Transistor, NPN, TO18

MULTICOMP PRO

Silicon planar NPN switching transistor for switching and linear application, DC and VHF amplifier applications. • Multicomp Pro products are rated 4.6 out of 5 stars • 12-month limited warranty *view Terms & Conditions for details • 96% of customers would...

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- - - - Through Hole - - 1.2W 3Pins 200°C - -
MBR10100G
MBR10100G - Schottky Rectifier, 100 V, 10 A, Single, TO-220AC, 2 Pins, 800 mV

SC07389

Schottky Rectifier, 100 V, 10 A, Single, TO-220AC, 2 Pins, 800 mV

ONSEMI

The MBR10100G is a Switch-mode Schottky Power Rectifier with epoxy moulded case and all external surfaces corrosion-resistant and terminal leads are readily solderable finish. The power rectifier features guard-ring for stress protection, low stored charge...

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- - - - - - - - 2Pins 175°C - -
BTA40-800B
BTA40-800B - Triac, 40A, 800V, RD-91

SC07594

Triac, 40A, 800V, RD-91

STMICROELECTRONICS

The BTA40-800B is a 3-pin Standard Insulated TRIAC for general purpose AC switching and can be used as ON/OFF function. The BTA series TRIAC provides voltage insulated tab by using an internal ceramic pad. • High commutation performance • Low thermal resis...

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- - - - - - - - 3Pins 125°C - -
BZX79-C6V2.
BZX79-C6V2. - Zener Single Diode, 6.2 V, 500 mW, DO-35, 2 Pins, 200 °C

SC05698

Zener Single Diode, 6.2 V, 500 mW, DO-35, 2 Pins, 200 °C

NXP

• Power Dissipation : 500mW • No. of Pins : 2Pins • Operating Temperature Max : 200°C • Product Range : BZX79

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- - - - - - - 500mW 2Pins 200°C BZX79 -
GBU4J-E3/45
GBU4J-E3/45 - Bridge Rectifier, Single Phase, 600 V, 4 A, GBU, 4 Pins, 1 V

SC07499

Bridge Rectifier, Single Phase, 600 V, 4 A, GBU, 4 Pins, 1 V

VISHAY

The GBU4J-E3/45 is a 4-pin single-phase glass passivated Bridge Rectifier Diode with high surge current capability. It is used in general purpose AC/DC bridge full wave rectification for monitor, TV, printer, adapter, audio equipment and home appliances ap...

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- - - - - - - - 4Pins 150°C - -
RFP50N06
RFP50N06 - Power MOSFET, N Channel, 60 V, 50 A, 0.022 ohm, TO-220AB, Through Hole

SC08222

Power MOSFET, N Channel, 60 V, 50 A, 0.022 ohm, TO-220AB, Through Hole

ONSEMI

The RFP50N06 is a 60V N-channel power MOSFET using MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. The MOSFET is designed for a...

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N Channel 60V 50A 0.022ohm Through Hole 10V 4V 131W 3Pins 175°C - -
IRF9530NPBF
IRF9530NPBF - Power MOSFET, P Channel, 100 V, 13 A, 0.2 ohm, TO-220AB, Through Hole

SC08220

Power MOSFET, P Channel, 100 V, 13 A, 0.2 ohm, TO-220AB, Through Hole

INFINEON

The IRF9530NPBF is -100V single P channel HEXFET power MOSFET in TO-220AB package. This MOSFET features extremely low on resistance per silicon area, dynamic dv/dt rating, rugged, fast switching and fully avalanche rated as a result, power MOSFET are well ...

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P Channel 100V 13A 0.2ohm Through Hole 10V 4V 79W 3Pins 175°C - -
BZT03C18-TR
BZT03C18-TR - Zener Single Diode, 18 V, 3.25 W, SOD-57, 2 Pins, 175 °C, Through Hole

SC07134

Zener Single Diode, 18 V, 3.25 W, SOD-57, 2 Pins, 175 °C, Through Hole

VISHAY

The BZT03 series Zener Diode with glass passivated junction and hermetically sealed package. It is used in medium power voltage regulators and medium power transient suppression circuits. • Clamping time in picoseconds • UL94V-0 Moulding compound flammabil...

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- - - - - - - 3.25W 2Pins 175°C BZT03 Series AEC-Q101
BD241C
BD241C - Transistor, NPN, TO220

SC06745

Transistor, NPN, TO220

STMICROELECTRONICS

The BD241C is a 100V Silicon NPN Complementary Power Transistor manufactured in planar technology with base island layout. The transistor shows exceptional high gain performance coupled with very low saturation voltage. Fast switching times and very low sa...

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- - - - Through Hole - - 40W 3Pins 150°C - -
IRFU9024NPBF
IRFU9024NPBF - Power MOSFET, P Channel, 55 V, 11 A, 0.175 ohm, TO-251AA, Through Hole

SC11062

Power MOSFET, P Channel, 55 V, 11 A, 0.175 ohm, TO-251AA, Through Hole

INFINEON

The IRFU9024NPBF is a -55V single P-channel HEXFET® Power MOSFET, fifth generation HEXFET utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized d...

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P Channel 55V 11A 0.175ohm Through Hole 10V 4V 38W 3Pins 150°C - -
IRF530NPBF
IRF530NPBF - Power MOSFET, N Channel, 100 V, 17 A, 0.09 ohm, TO-220AB, Through Hole

SC08215

Power MOSFET, N Channel, 100 V, 17 A, 0.09 ohm, TO-220AB, Through Hole

INFINEON

The IRF530NPBF from Infineon is a 100V single N channel HEXFET power MOSFET in a TO-220AB package. This MOSFET features extremely low on-resistance per silicon area, dynamic dv/dt rating, rugged, fast switching and is fully avalanche rated. As a result, th...

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N Channel 100V 17A 0.09ohm Through Hole 10V 4V 63W 3Pins 175°C - -
BZX79-C13.
BZX79-C13. - Zener Single Diode, 13 V, 500 mW, DO-35, 2 Pins, 200 °C

SC05706

Zener Single Diode, 13 V, 500 mW, DO-35, 2 Pins, 200 °C

NXP

• Power Dissipation : 500mW • No. of Pins : 2Pins • Operating Temperature Max : 200°C • Product Range : BZX79

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- - - - - - - 500mW 2Pins 200°C BZX79 -
BZT03C100-TR
BZT03C100-TR - Zener Single Diode, 100 V, 3.25 W, SOD-57, 2 Pins, 175 °C, Through Hole

SC07152

Zener Single Diode, 100 V, 3.25 W, SOD-57, 2 Pins, 175 °C, Through Hole

VISHAY

The BZT03C100-TR is a Zener Diode with surge current characteristics. The BZT03 series Zener diode has glass passivated junction and Zener voltage of 100V. • Clamping time in picoseconds • 5mA Test current • 60Ω at 200mA Dynamic resistance • 5μA at 82V Max...

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- - - - - - - 3.25W 2Pins 175°C BZT03 Series AEC-Q101
UF5408.
UF5408. - Fast / Ultrafast Diode, 1 kV, 3 A, Single, 1.7 V, 75 ns, 150 A

SCUF5408

Fast / Ultrafast Diode, 1 kV, 3 A, Single, 1.7 V, 75 ns, 150 A

VISHAY

• Operating Temperature Max : 150°C • Product Range : UF540

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- - - - - - - - - 150°C UF540 -
2N3906
2N3906 - Transistor, PNP, TO92

SC08424

Transistor, PNP, TO92

MULTICOMP PRO

The 2N3906 from Multicomp Pro is a through hole, PNP low power, silicon planar switching transistors in TO-92 metal can package. This transistor features fast switching, hence is suitable for switching and amplification. • Collector emitter voltage (Vce) o...

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- - - - Through Hole - - 625mW 3Pins 150°C - -
BC107B
BC107B - Si-NPN Uni 50V 0.2A 0.3W

SC06645

Si-NPN Uni 50V 0.2A 0.3W

MULTICOMP PRO

The BC107B from Multicomp Pro is a low power bipolar transistor in TO-18 metal can package. This NPN silicon planar epitaxial transistor is used for general purpose switching and amplification. • Collector emitter voltage (Vce) is 45V at IC = 2mA, IB = 0 •...

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- - - - Through Hole - - 600mW 3Pins 200°C Multicomp Pro Bipolar NPN Transistor -
BCX70H
BCX70H - Transistor, NPN SOT23

SC06594

Transistor, NPN SOT23

NXP

The BCX70H is a NPN General Purpose Transistor housed in a plastic package. It is suitable for use with the general purpose switching and amplification. • Low current • Low voltage • AH marking code

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- - - - Surface Mount - - 250mW 3Pins 150°C - -
BZT03C47-TR
BZT03C47-TR - Zener Single Diode, 47 V, 3.25 W, SOD-57, 2 Pins, 175 °C, Through Hole

SC07144

Zener Single Diode, 47 V, 3.25 W, SOD-57, 2 Pins, 175 °C, Through Hole

VISHAY

• BZT03 series zener diode with surge current specification in 2 pin SOD-57 package • Glass passivated junction • Hermetically sealed package • Clamping time in picoseconds • Suitable for medium power voltage regulators and medium power transient suppress...

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- - - - - - - 3.25W 2Pins 175°C BZT03 Series AEC-Q101
MJE15031.
MJE15031. - Transistor, TO220

SC01309

Transistor, TO220

MULTICOMP PRO

• Transistor Mounting : Through Hole • Power Dissipation : 50W • No. of Pins : 3Pins

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- - - - Through Hole - - 50W 3Pins - - -
MJ15024G
MJ15024G - Transistor, NPN, TO3

SC06782

Transistor, NPN, TO3

ONSEMI

The MJ15024G is a 250V Silicon NPN Bipolar Power Transistor designed for high power audio, disk head positioners and other linear applications. • High DC current gain • High safe operating area • Collector-base voltage (Vcbo = 400V) • Emitter-base voltage ...

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- - - - Through Hole - - 250W 2Pins 200°C - -
MJ15023G
MJ15023G - Transistor, PNP, TO3

SC06786

Transistor, PNP, TO3

ONSEMI

The MJ15023G is a -200V Silicon PNP Bipolar Power Transistor designed for high power audio, disk head positioners and other linear applications. • High DC current gain • High safe operating area • Collector-base voltage (Vcbo = 350V) • Emitter-base voltage...

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- - - - Through Hole - - 250W 2Pins 200°C - -
2N5195G
2N5195G - Transistor, PNP, TO126

SC06743

Transistor, PNP, TO126

ONSEMI

The 2N5195G is a 4A silicon PNP Power Transistor designed for use in power amplifier and switching circuits and offers excellent safe area limits. • Complement to NPN 2N5191 and 2N5192

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- - - - Through Hole - - 40W 3Pins 150°C - -
ZTX614
ZTX614 - Darlington Transistor, E-Line

SC06839

Darlington Transistor, E-Line

DIODES INC.

The ZTX614 is a NPN silicon planar medium-power Darlington Transistor offers 800mA continuous collector current and 120V collector-base voltage. • Gain of 10K @ IC = 500mA • -55 to 200°C Operating temperature range

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- - - - Through Hole - - - 3Pins 200°C - -
1N6263
1N6263 - Small Signal Schottky Diode, Single, 60 V, 15 mA, 410 mV, 50 mA, 200 °C

SC11331

Small Signal Schottky Diode, Single, 60 V, 15 mA, 410 mV, 50 mA, 200 °C

STMICROELECTRONICS

High performance devices for UHF/VHF applications, detecting, mixing, switching etc. Low turn-off voltage, as low as 0.34V @ 1mA. Pico-second switching speed. High breakdown voltage, up to 70V.

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- - - - - - - - 2Pins 200°C - -