Semiconductors - Discretes
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Manufacturer Part No | Order Code | Description / Manufacturer | Availability | Price For |
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Quantity | Channel Type | Drain Source Voltage Vds | Continuous Drain Current Id | Drain Source On State Resistance | Transistor Mounting | Rds(on) Test Voltage | Gate Source Threshold Voltage Max | Power Dissipation | No. of Pins | Operating Temperature Max | Product Range | Qualification | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRF9Z24NPBF
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SC11122 |
Power MOSFET, P Channel, 55 V, 12 A, 0.175 ohm, TO-220AB, Through Hole INFINEON The IRF9Z24NPBF is a -55V single P-channel HEXFET® Power MOSFET, fifth generation HEXFET utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized de...
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1+ €0.7973 (€0.98) 25+ €0.6783 (€0.83) 100+ €0.6188 (€0.76) |
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P Channel | 55V | 12A | 0.175ohm | Through Hole | 10V | 4V | 45W | 3Pins | 175°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2N2222A
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SC06714 |
Transistor, NPN, TO18 MULTICOMP PRO Silicon planar NPN switching transistor for switching and linear application, DC and VHF amplifier applications. • Multicomp Pro products are rated 4.6 out of 5 stars • 12-month limited warranty *view Terms & Conditions for details • 96% of customers would...
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- | - | - | - | Through Hole | - | - | 1.2W | 3Pins | 200°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MBR10100G
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SC07389 |
Schottky Rectifier, 100 V, 10 A, Single, TO-220AC, 2 Pins, 800 mV ONSEMI The MBR10100G is a Switch-mode Schottky Power Rectifier with epoxy moulded case and all external surfaces corrosion-resistant and terminal leads are readily solderable finish. The power rectifier features guard-ring for stress protection, low stored charge...
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1+ €0.8568 (€1.05) 10+ €0.6188 (€0.76) 100+ €0.5236 (€0.64) |
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- | - | - | - | - | - | - | - | 2Pins | 175°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BTA40-800B
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SC07594 |
Triac, 40A, 800V, RD-91 STMICROELECTRONICS The BTA40-800B is a 3-pin Standard Insulated TRIAC for general purpose AC switching and can be used as ON/OFF function. The BTA series TRIAC provides voltage insulated tab by using an internal ceramic pad. • High commutation performance • Low thermal resis...
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1+ €11.3288 (€13.93) 10+ €9.4367 (€11.61) 100+ €8.092 (€9.95) |
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- | - | - | - | - | - | - | - | 3Pins | 125°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BZX79-C6V2.
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SC05698 |
Zener Single Diode, 6.2 V, 500 mW, DO-35, 2 Pins, 200 °C NXP • Power Dissipation : 500mW • No. of Pins : 2Pins • Operating Temperature Max : 200°C • Product Range : BZX79
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- | - | - | - | - | - | - | 500mW | 2Pins | 200°C | BZX79 | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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GBU4J-E3/45
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SC07499 |
Bridge Rectifier, Single Phase, 600 V, 4 A, GBU, 4 Pins, 1 V VISHAY The GBU4J-E3/45 is a 4-pin single-phase glass passivated Bridge Rectifier Diode with high surge current capability. It is used in general purpose AC/DC bridge full wave rectification for monitor, TV, printer, adapter, audio equipment and home appliances ap...
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1+ €1.2376 (€1.52) 10+ €1.0948 (€1.35) 100+ €0.9758 (€1.20) |
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- | - | - | - | - | - | - | - | 4Pins | 150°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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RFP50N06
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SC08222 |
Power MOSFET, N Channel, 60 V, 50 A, 0.022 ohm, TO-220AB, Through Hole ONSEMI The RFP50N06 is a 60V N-channel power MOSFET using MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. The MOSFET is designed for a...
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1+ €1.2971 (€1.60) 25+ €1.1543 (€1.42) 100+ €0.9877 (€1.21) |
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N Channel | 60V | 50A | 0.022ohm | Through Hole | 10V | 4V | 131W | 3Pins | 175°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRF9530NPBF
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SC08220 |
Power MOSFET, P Channel, 100 V, 13 A, 0.2 ohm, TO-220AB, Through Hole INFINEON The IRF9530NPBF is -100V single P channel HEXFET power MOSFET in TO-220AB package. This MOSFET features extremely low on resistance per silicon area, dynamic dv/dt rating, rugged, fast switching and fully avalanche rated as a result, power MOSFET are well ...
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P Channel | 100V | 13A | 0.2ohm | Through Hole | 10V | 4V | 79W | 3Pins | 175°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BZT03C18-TR
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SC07134 |
Zener Single Diode, 18 V, 3.25 W, SOD-57, 2 Pins, 175 °C, Through Hole VISHAY The BZT03 series Zener Diode with glass passivated junction and hermetically sealed package. It is used in medium power voltage regulators and medium power transient suppression circuits. • Clamping time in picoseconds • UL94V-0 Moulding compound flammabil...
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- | - | - | - | - | - | - | 3.25W | 2Pins | 175°C | BZT03 Series | AEC-Q101 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BD241C
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SC06745 |
Transistor, NPN, TO220 STMICROELECTRONICS The BD241C is a 100V Silicon NPN Complementary Power Transistor manufactured in planar technology with base island layout. The transistor shows exceptional high gain performance coupled with very low saturation voltage. Fast switching times and very low sa...
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- | - | - | - | Through Hole | - | - | 40W | 3Pins | 150°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRFU9024NPBF
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SC11062 |
Power MOSFET, P Channel, 55 V, 11 A, 0.175 ohm, TO-251AA, Through Hole INFINEON The IRFU9024NPBF is a -55V single P-channel HEXFET® Power MOSFET, fifth generation HEXFET utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized d...
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1+ €0.7021 (€0.86) 25+ €0.595 (€0.73) 100+ €0.4879 (€0.60) 250+ €0.3927 (€0.48) |
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P Channel | 55V | 11A | 0.175ohm | Through Hole | 10V | 4V | 38W | 3Pins | 150°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRF530NPBF
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SC08215 |
Power MOSFET, N Channel, 100 V, 17 A, 0.09 ohm, TO-220AB, Through Hole INFINEON The IRF530NPBF from Infineon is a 100V single N channel HEXFET power MOSFET in a TO-220AB package. This MOSFET features extremely low on-resistance per silicon area, dynamic dv/dt rating, rugged, fast switching and is fully avalanche rated. As a result, th...
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N Channel | 100V | 17A | 0.09ohm | Through Hole | 10V | 4V | 63W | 3Pins | 175°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BZX79-C13.
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SC05706 |
Zener Single Diode, 13 V, 500 mW, DO-35, 2 Pins, 200 °C NXP • Power Dissipation : 500mW • No. of Pins : 2Pins • Operating Temperature Max : 200°C • Product Range : BZX79
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- | - | - | - | - | - | - | 500mW | 2Pins | 200°C | BZX79 | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BZT03C100-TR
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SC07152 |
Zener Single Diode, 100 V, 3.25 W, SOD-57, 2 Pins, 175 °C, Through Hole VISHAY The BZT03C100-TR is a Zener Diode with surge current characteristics. The BZT03 series Zener diode has glass passivated junction and Zener voltage of 100V. • Clamping time in picoseconds • 5mA Test current • 60Ω at 200mA Dynamic resistance • 5μA at 82V Max...
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- | - | - | - | - | - | - | 3.25W | 2Pins | 175°C | BZT03 Series | AEC-Q101 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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UF5408.
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SCUF5408 |
Fast / Ultrafast Diode, 1 kV, 3 A, Single, 1.7 V, 75 ns, 150 A VISHAY • Operating Temperature Max : 150°C • Product Range : UF540
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- | - | - | - | - | - | - | - | - | 150°C | UF540 | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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2N3906
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SC08424 |
Transistor, PNP, TO92 MULTICOMP PRO The 2N3906 from Multicomp Pro is a through hole, PNP low power, silicon planar switching transistors in TO-92 metal can package. This transistor features fast switching, hence is suitable for switching and amplification. • Collector emitter voltage (Vce) o...
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- | - | - | - | Through Hole | - | - | 625mW | 3Pins | 150°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC107B
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SC06645 |
Si-NPN Uni 50V 0.2A 0.3W MULTICOMP PRO The BC107B from Multicomp Pro is a low power bipolar transistor in TO-18 metal can package. This NPN silicon planar epitaxial transistor is used for general purpose switching and amplification. • Collector emitter voltage (Vce) is 45V at IC = 2mA, IB = 0 •...
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- | - | - | - | Through Hole | - | - | 600mW | 3Pins | 200°C | Multicomp Pro Bipolar NPN Transistor | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BCX70H
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SC06594 |
Transistor, NPN SOT23 NXP The BCX70H is a NPN General Purpose Transistor housed in a plastic package. It is suitable for use with the general purpose switching and amplification. • Low current • Low voltage • AH marking code
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- | - | - | - | Surface Mount | - | - | 250mW | 3Pins | 150°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BZT03C47-TR
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SC07144 |
Zener Single Diode, 47 V, 3.25 W, SOD-57, 2 Pins, 175 °C, Through Hole VISHAY • BZT03 series zener diode with surge current specification in 2 pin SOD-57 package • Glass passivated junction • Hermetically sealed package • Clamping time in picoseconds • Suitable for medium power voltage regulators and medium power transient suppress...
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- | - | - | - | - | - | - | 3.25W | 2Pins | 175°C | BZT03 Series | AEC-Q101 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MJE15031.
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SC01309 |
Transistor, TO220 MULTICOMP PRO • Transistor Mounting : Through Hole • Power Dissipation : 50W • No. of Pins : 3Pins
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- | - | - | - | Through Hole | - | - | 50W | 3Pins | - | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MJ15024G
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SC06782 |
Transistor, NPN, TO3 ONSEMI The MJ15024G is a 250V Silicon NPN Bipolar Power Transistor designed for high power audio, disk head positioners and other linear applications. • High DC current gain • High safe operating area • Collector-base voltage (Vcbo = 400V) • Emitter-base voltage ...
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- | - | - | - | Through Hole | - | - | 250W | 2Pins | 200°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MJ15023G
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SC06786 |
Transistor, PNP, TO3 ONSEMI The MJ15023G is a -200V Silicon PNP Bipolar Power Transistor designed for high power audio, disk head positioners and other linear applications. • High DC current gain • High safe operating area • Collector-base voltage (Vcbo = 350V) • Emitter-base voltage...
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- | - | - | - | Through Hole | - | - | 250W | 2Pins | 200°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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2N5195G
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SC06743 |
Transistor, PNP, TO126 ONSEMI The 2N5195G is a 4A silicon PNP Power Transistor designed for use in power amplifier and switching circuits and offers excellent safe area limits. • Complement to NPN 2N5191 and 2N5192
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- | - | - | - | Through Hole | - | - | 40W | 3Pins | 150°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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ZTX614
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SC06839 |
Darlington Transistor, E-Line DIODES INC. The ZTX614 is a NPN silicon planar medium-power Darlington Transistor offers 800mA continuous collector current and 120V collector-base voltage. • Gain of 10K @ IC = 500mA • -55 to 200°C Operating temperature range
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- | - | - | - | Through Hole | - | - | - | 3Pins | 200°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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1N6263
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SC11331 |
Small Signal Schottky Diode, Single, 60 V, 15 mA, 410 mV, 50 mA, 200 °C STMICROELECTRONICS High performance devices for UHF/VHF applications, detecting, mixing, switching etc. Low turn-off voltage, as low as 0.34V @ 1mA. Pico-second switching speed. High breakdown voltage, up to 70V.
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- | - | - | - | - | - | - | - | 2Pins | 200°C | - | - |