Semiconductors - Discretes

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  Manufacturer Part No Order Code Description / Manufacturer
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No. of Phases Repetitive Peak Reverse Voltage Average Forward Current Bridge Rectifier Case Style No. of Pins Forward Voltage Max Bridge Rectifier Mounting Forward Surge Current Operating Temperature Max Product Range
 
 
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GBU8J.
GBU8J. - Bridge Rectifier, Single Phase, 600 V, 8 A, 4 Pins, 1 V

SC05550

Bridge Rectifier, Single Phase, 600 V, 8 A, 4 Pins, 1 V

ONSEMI

• No. of Phases : Single Phase • Repetitive Peak Reverse Voltage : 600V • Average Forward Current : 8A • No. of Pins : 4Pins • Forward Voltage Max : 1V • Bridge Rectifier Mounting : Through Hole • Forward Surge Current : 200A • Operating Temperature Max : 150°C • Product Range : GBU8J

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Single Phase 600V 8A - 4Pins 1V Through Hole 200A 150°C GBU8J
BTA41-700BRG
BTA41-700BRG - Triac, 40A, 700V, TOP-3

SC07596

Triac, 40A, 700V, TOP-3

STMICROELECTRONICS

• 800V and 600V, 40A standard Triac in TOP3 isolated package suitable for general purpose AC switching • High current triac • Low thermal resistance • UL1557 recognized • UL-94, V0 flammability package resin compliance

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- - - - 3Pins - - - 125°C -
2N2907A
2N2907A - Transistor, PNP, TO18

SC06705

Transistor, PNP, TO18

MULTICOMP PRO

Silicon planar PNP switching transistor for DC to VHF amplifier, switching and linear applications. • Multicomp Pro products are rated 4.6 out of 5 stars • 12-month limited warranty *view Terms & Conditions for details • 96% of customers would recommend to...

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- - - - 3Pins - - - 175°C -
1N5377BG
1N5377BG - Zener Single Diode, 91 V, 5 W, 017AA, 2 Pins, 200 °C, Through Hole

SC07202

Zener Single Diode, 91 V, 5 W, 017AA, 2 Pins, 200 °C, Through Hole

ONSEMI

The 1N5377BG is a Surmetic™ 40 Voltage Regulator Zener Diode with tight limits and better operating characteristics that reflect the superior capabilities of silicon-oxide passivated junctions. All this in an axial lead, transfer-moulded plastic package th...

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- - - - 2Pins - - - 200°C 1N53 Series
BAT43
BAT43 - Small Signal Schottky Diode, Single, 30 V, 200 mA, 1 V, 4 A, 125 °C

SC07325

Small Signal Schottky Diode, Single, 30 V, 200 mA, 1 V, 4 A, 125 °C

STMICROELECTRONICS

The BAT43 is a general purpose, metal to silicon small signal Schottky Diode featuring very low turn-on voltage fast switching. This device have integrated protection against excessive voltage such as electrostatic discharge. • 200mW Power dissipation • 30...

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- 30V 200mA - 2Pins 1V - 4A 125°C BAT43 Series
MURS160T3G
MURS160T3G - Fast / Ultrafast Diode, 600 V, 1 A, Single, 1.25 V, 75 ns, 35 A

SC07378

Fast / Ultrafast Diode, 600 V, 1 A, Single, 1.25 V, 75 ns, 35 A

ONSEMI

MURS160T3G is a power rectifier with ultra-fast recovery. Ideally suited for high voltage, high-frequency rectification, or as free wheeling and protection diodes in surface mount applications where compact size and weight are critical to the system. • Sma...

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- 600V 1A - - 1.25V - 35A 175°C -
BZV55-C15
BZV55-C15 - Zener Single Diode, 15 V, 500 mW, SOD-80C, 2 Pins, 200 °C, Surface Mount

SC11217

Zener Single Diode, 15 V, 500 mW, SOD-80C, 2 Pins, 200 °C, Surface Mount

NXP

The BZV55 series from NXP are surface mount low power voltage regulator diodes which are hermetically sealed in SOD80C package. The device features non repetitive peak reverse power dissipation ≤ 40 W, total power dissipation≤ 500mW and low differential re...

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- - - - 2Pins - - - 200°C BZV55
BDV67B
BDV67B - Darlington Transistor, TO247

SC06869

Darlington Transistor, TO247

MULTICOMP PRO

The BDV67B is a NPN Darlington Transistor designed in monolithic construction with built-in base-emitter shunt resistor. • -65 to 150°C Operating junction temperature range • Multicomp Pro products are rated 4.6 out of 5 stars • 12 month limited warranty *...

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- - - - 3Pins - - - 150°C -
PMBT2222A,215
PMBT2222A,215 - Transistor, NPN, SOT23

SC10956

Transistor, NPN, SOT23

NXP

• No. of Pins : 3Pins • Operating Temperature Max : 150°C

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- - - - 3Pins - - - 150°C -
IRFU014PBF
IRFU014PBF - Power MOSFET, N Channel, 60 V, 8.4 A, 0.2 ohm, TO-251AA, Through Hole

SC11070

Power MOSFET, N Channel, 60 V, 8.4 A, 0.2 ohm, TO-251AA, Through Hole

VISHAY

The IRFU014PBF is a third generation N-channel enhancement-mode Power MOSFET comes with the best combination of fast switching, ruggedized device design and low ON-resistance. The straight lead version is for through-hole mounting applications. Power dissi...

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- - - - 3Pins - - - 150°C -
BD139
BD139 - Transistor, NPN, TO126

SC09455

Transistor, NPN, TO126

STMICROELECTRONICS

The BD139 is a NPN complementary low voltage NPN transistor in 3 pin SOT-32 package. This device is designed for audio amplifiers and drivers utilizing complementary or quasi-complementary circuits. • Products are pre-selected in DC current gain • Collecto...

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- - - - 3Pins - - - 150°C -
STW10NK60Z
STW10NK60Z - Power MOSFET, N Channel, 600 V, 10 A, 0.65 ohm, TO-247, Through Hole

SC06449

Power MOSFET, N Channel, 600 V, 10 A, 0.65 ohm, TO-247, Through Hole

STMICROELECTRONICS

The STW10NK60Z is a SuperMESH™ N-channel Power MOSFET offers Zener-protection and minimized gate charge. This Power MOSFET developed using STMicroelectronics' SuperMESH™ technology, achieved through optimization of ST's well established strip based PowerME...

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- - - - 3Pins - - - 150°C -
VS-GBPC3506A
VS-GBPC3506A - Bridge Rectifier, Single Phase, 600 V, 35 A, Module, 4 Pins, 1.1 V

SC07525

Bridge Rectifier, Single Phase, 600 V, 35 A, Module, 4 Pins, 1.1 V

VISHAY

The VS-GBPC3506A is a 4-pin single-phase compact Power Bridge Rectifier Diode offers efficient and reliable operation. The device is intended for use in general purpose applications. It has nickel-plated standard fast-on terminals solderable using lead (Pb...

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Single Phase 600V 35A Module 4Pins 1.1V Surface Mount 475A 150°C VS-GBPC Series
MPSA42
MPSA42 - Transistor, NPN, TO92

SC06677

Transistor, NPN, TO92

ONSEMI

The MPSA42 is a NPN high voltage amplifier in TO-92 package. This device is designed for applications as a video output and other high voltage applications. • Collector to emitter voltage (Vce) of 300V • Collector to emitter saturation voltage of 500mV at ...

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- - - - 3Pins - - - 150°C -
VNB35N07TR-E
VNB35N07TR-E - Power MOSFET, N Channel, 80 V, 18 A, 0.028 ohm, TO-263 (D2PAK), Surface Mount

SC11022

Power MOSFET, N Channel, 80 V, 18 A, 0.028 ohm, TO-263 (D2PAK), Surface Mount

STMICROELECTRONICS

The VNB35N07TR-E is an OMNIFET fully auto-protected Power MOSFET made using VIPower® technology. It is intended for replacement of standard power MOSFETs in DC to 50kHz applications. Built-in thermal shutdown, linear current limitation and overvoltage clam...

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- - - - 3Pins - - - 150°C -
TIP30A
TIP30A - Transistor, PNP, TO220

SC06763

Transistor, PNP, TO220

MULTICOMP PRO

The TIP30A is a PNP high-power Bipolar Transistor offers 0.7V (maximum) collector-emitter saturation voltage at 1A and 3MHz minimum current gain-bandwidth product at 200mA. • -65 to 150°C Operating junction temperature range • Multicomp Pro products are ra...

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- - - - 3Pins - - - 150°C -
IRL540NPBF
IRL540NPBF - Power MOSFET, N Channel, 100 V, 36 A, 0.044 ohm, TO-220AB, Through Hole

SC11124

Power MOSFET, N Channel, 100 V, 36 A, 0.044 ohm, TO-220AB, Through Hole

INFINEON

The IRL540NPBF is a N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known ...

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- - - - 3Pins - - - 175°C -
BTA16-600SWRG
BTA16-600SWRG - Triac, 16A, 600V, TO220AB

SC07586

Triac, 16A, 600V, TO220AB

STMICROELECTRONICS

The BTA16-600SWRG is a logic level standard TRIAC for general purpose mains power AC switching. • Medium Current • Low Thermal Resistance with Clip Bonding • Low Thermal Resistance Insulation Ceramic for Insulated BTA • High Commutation (4Q) or Very High C...

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- - - - 3Pins - - - 125°C -
MJE13005
MJE13005 - Transistor, NPN, TO220

SC06806

Transistor, NPN, TO220

MULTICOMP PRO

The MJE13005 is a switch mode series NPN Power Transistor, designed for use in high-voltage, high-speed, power switching in inductive circuits, they are particularly suited for 115 and 220V switch mode applications such as switching regulator's, inverters,...

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- - - - 3Pins - - - 150°C -
BZV85-C5V1
BZV85-C5V1 - Zener Single Diode, 5.1 V, 1 W, DO-41 (DO-204AL), 2 Pins, 200 °C

SC07089

Zener Single Diode, 5.1 V, 1 W, DO-41 (DO-204AL), 2 Pins, 200 °C

NXP

The BZV85 series medium-power voltage regulator Zener Diode designed in a small hermetically sealed leaded SOD66 (DO-41) glass package. It is suitable for general regulation functions. • 1.3W Total power dissipation (maximum) • ±5% Tolerance series (approx...

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- - - - 2Pins - - - 200°C BZV85
BC857,215
BC857,215 - Transistor, PNP SOT23

SC06600

Transistor, PNP SOT23

NXP

• No. of Pins : 3Pins • Operating Temperature Max : 150°C

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BA159G
BA159G - Standard Recovery Diode, 1 kV, 1 A, Single, 1.2 V, 250 ns, 30 A

SC07375

Standard Recovery Diode, 1 kV, 1 A, Single, 1.2 V, 250 ns, 30 A

TAIWAN SEMICONDUCTOR

The BA159G is a Glass-passivated Fast Recovery Rectifier with moulded plastic with solderable axial leads. • Colour band denotes cathode end polarity • UL94V-0 Epoxy flammability rating • Low forward voltage drop • High current capability • High reliabilit...

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- 1kV 1A - 2Pins 1.2V - 30A 150°C BA15xG Series
2N2222
2N2222 - Transistor, NPN, TO18

SC06697

Transistor, NPN, TO18

MULTICOMP PRO

The 2N2222 from Multicomp Pro is a through hole, low power bipolar transistor in TO-18 metal can package. This NPN silicon planar switching transistor is used for switching, linear DC power supply and VHF amplifier applications. • Collector emitter breakdo...

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- - - - 3Pins - - - 200°C -
BC807-40
BC807-40 - Transistor, PNP SOT23

SC06597

Transistor, PNP SOT23

NXP

• No. of Pins : 3Pins • Operating Temperature Max : 150°C

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IRFP4368PBF
IRFP4368PBF - Power MOSFET, N Channel, 75 V, 350 A, 0.00146 ohm, TO-247AC, Through Hole

SC11167

Power MOSFET, N Channel, 75 V, 350 A, 0.00146 ohm, TO-247AC, Through Hole

INFINEON

The IRFP4368PBF is a 75V single N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using Trench MOSFET technology. Suitable for high efficiency synchronous rectification in SMPS, uninterruptible ...

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- - - - 3Pins - - - 175°C -