Semiconductors - Discretes
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Manufacturer Part No | Order Code | Description / Manufacturer | Availability | Price For |
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Quantity | Channel Type | Drain Source On State Resistance | Transistor Mounting | Power Dissipation | No. of Pins | Product Range | Qualification | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRF2907ZPBF
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SC08253 |
Power MOSFET, N Channel, 75 V, 170 A, 0.0045 ohm, TO-220, Through Hole INFINEON The IRF2907ZPBF is a HEXFET® single N-channel Power MOSFET utilizes the latest processing techniques to achieve extremely low ON-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching spee...
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N Channel | 0.0045ohm | Through Hole | 330W | 3Pins | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SR504
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SC07449 |
Schottky Rectifier, 40 V, 5 A, Single, DO-201AD, 2 Pins, 550 mV TAIWAN SEMICONDUCTOR The SR504 is a Schottky Barrier Rectifier with moulded plastic case and solderable axial-lead as per MIL- STD-202 standard. • Colour band denotes cathode end • Low forward voltage drop • High current capability • High reliability • High surge current capab...
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- | - | - | - | 2Pins | SR5xx Series | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BU406
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SC06796 |
Transistor, NPN, TO220 MULTICOMP PRO The BU406 is a NPN Power Transistor for horizontal deflection output stages of TV and CTV circuits. • High voltage • Collector-emitter sustaining voltage (Vceo (sus) = 400V minimum) • Low saturation voltage • Fast switching speed • Multicomp Pro products a...
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1+ €1.1305 (€1.39) 10+ €0.9877 (€1.21) 100+ €0.8568 (€1.05) 500+ €0.7021 (€0.86) |
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- | - | Through Hole | 60W | 3Pins | Multicomp Pro Bipolar Power Transistors NPN | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
ZVN3310F
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SC07001 |
Power MOSFET, N Channel, 100 V, 100 mA, 10 ohm, SOT-23, Surface Mount DIODES INC. The ZVN3310F is an N-channel Enhancement Mode MOSFET utilizes a structure that combines low input capacitance with relatively low on-resistance and has an intrinsically higher pulse current handling capability in linear mode than a comparable trench techno...
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5+ €0.3927 (€0.48) 25+ €0.3094 (€0.38) |
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N Channel | 10ohm | Surface Mount | 330mW | 3Pins | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRF3205ZPBF
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SC11149 |
Power MOSFET, Automotive, N Channel, 55 V, 110 A, 0.0065 ohm, TO-220AB, Through Hole INFINEON The IRF3205ZPBF is a HEXFET® N-channel Power MOSFET utilizes the latest processing techniques to achieve extremely low ON-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and i...
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1+ €1.2376 (€1.52) 25+ €1.1186 (€1.38) 100+ €0.9996 (€1.23) |
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N Channel | 0.0065ohm | Through Hole | 170W | 3Pins | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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HUF75339P3
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SC12748 |
Power MOSFET, N Channel, 55 V, 75 A, 0.012 ohm, TO-220AB, Through Hole ONSEMI The HUF75339P3 is a 55V N-channel UltraFET Power MOSFET. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche...
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1+ €1.2852 (€1.58) 25+ €1.0829 (€1.33) 100+ €0.9996 (€1.23) |
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N Channel | 0.012ohm | Through Hole | 200W | 3Pins | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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GBU8D
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SC07509 |
Bridge Rectifier, Single Phase, 200 V, 8 A, SIP, 4 Pins, 1 V ONSEMI The GBU8D is a Bridge Rectifier with moulded plastic construction and glass-passivated junction. This bridge rectifier is general usage and suitable for many different applications. • 140V Maximum RMS bridge input voltage • 16W Power dissipation • UL Certi...
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- | - | - | - | 4Pins | GBU8D | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BZV85-C6V2
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SC07091 |
Zener Single Diode, 6.2 V, 1 W, DO-41 (DO-204AL), 2 Pins, 200 °C NXP • Power Dissipation : 1W • No. of Pins : 2Pins • Product Range : BZV85
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- | - | - | 1W | 2Pins | BZV85 | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BZX79-C7V5.
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SC05700 |
Zener Single Diode, 7.5 V, 500 mW, DO-35, 2 Pins, 200 °C NXP • Power Dissipation : 500mW • No. of Pins : 2Pins • Product Range : BZX79
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- | - | - | 500mW | 2Pins | BZX79 | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MBR1045G
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SC07390 |
Schottky Rectifier, 45 V, 10 A, Single, TO-220AC, 2 Pins, 570 mV ONSEMI The MBR1045G is a SWITCHMODE™ Power Schottky Barrier Rectifier with epoxy moulded case. • All external surfaces corrosion-resistant • Low forward voltage • Low power loss/high efficiency • UL94V-0 Flammability rating
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1+ €0.5593 (€0.69) 10+ €0.4998 (€0.61) 100+ €0.4522 (€0.56) |
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- | - | - | - | 2Pins | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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D45H8G
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SC06761 |
Transistor, PNP, TO220 ONSEMI The D45H8G is a 10A PNP bipolar Power Transistor offers low collector-emitter saturation voltage. It can be used as general purpose power amplification and switching such as output or driver stages in applications such as switching regulators, converters a...
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1+ €1.1424 (€1.41) 10+ €0.952 (€1.17) 100+ €0.8092 (€1.00) |
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- | - | Through Hole | 70W | 3Pins | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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GBU6D-E3/45
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SC07504 |
Bridge Rectifier, Single Phase, 200 V, 6 A, SIP, 4 Pins, 1 V VISHAY • No. of Pins : 4Pins
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- | - | - | - | 4Pins | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRF3415PBF
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SC11109 |
Power MOSFET, N Channel, 150 V, 37 A, 0.042 ohm, TO-220AB, Through Hole INFINEON The IRF3415PBF is a HEXFET® fifth generation single N-channel Power MOSFET utilizes advanced processing techniques to achieve extremely low ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design, pr...
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N Channel | 0.042ohm | Through Hole | 150W | 3Pins | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SPW17N80C3
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SC11162 |
Power MOSFET, N Channel, 800 V, 17 A, 0.29 ohm, TO-247, Through Hole INFINEON The SPW17N80C3 is a Cool MOS™ Power Transistor with ultra low gate charge, new revolutionary high voltage technology, extreme dv/dt rated and periodic avalanche rated. • ±20V Gate-source voltage • 260°C Soldering temperature
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N Channel | 0.29ohm | Through Hole | 208W | 3Pins | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SMBT3904
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SC10623 |
Transistor, NPN, SOT23 INFINEON • Transistor Mounting : Surface Mount • Power Dissipation : 330mW • No. of Pins : 3Pins
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- | - | Surface Mount | 330mW | 3Pins | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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FZT653
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SC10978 |
Transistor, NPN, SOT223 DIODES INC. The FZT653 is a NPN High Performance Transistor with matte tin-plated terminals, UL94V-0-flame rated moulded plastic case, solderable terminals as per MIL-STD-202, method 208 standard. • Complement to FZT753 • Level-1 per J-STD-020 moisture sensitivity • G...
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- | - | Surface Mount | 2W | 4Pins | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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2N5551
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SC06652 |
Si-N 180V 0.6A 0.31W TO92 Q14 ONSEMI The 2N5551 is a through hole, NPN general purpose amplifier in TO-92 package. This device is designed for general purpose high voltage amplifiers and gas discharge display drivers. • Collector to emitter breakdown voltage of 160V • Collector to emitter sat...
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- | - | Through Hole | 625mW | 3Pins | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRF9520PBF
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SC11123 |
Power MOSFET, P Channel, 100 V, 6 A, 0.6 ohm, TO-220AB, Through Hole VISHAY The IRF9520PBF is a -100V P-channel Power MOSFET provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The low thermal resistance contributes to its wide acceptance throughout...
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P Channel | 0.6ohm | Through Hole | 40W | 3Pins | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC548CTA
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SC13995 |
Transistor, Bipolar, NPN, 30V, TO92-3 ONSEMI The BC548CTA is a NPN epitaxial silicon Bipolar Transistor suitable for switching and amplifier applications. • Complement to BC558
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- | - | Through Hole | 500mW | 3Pins | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BZX84C12
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SC12738 |
Zener Single Diode, 12 V, 350 mW, SOT-23, 3 Pins, 150 °C, Surface Mount DIODES INC. The BZX84C12 is a surface mount Zener Diode with moulded plastic case and matte tin annealed over Alloy 42 lead frame (lead-free plating) terminals. It is ideally suited for automated assembly processes. • Planar die construction • 350mW Power dissipation ...
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- | - | - | 350mW | 3Pins | BZX84C | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC549BTA
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SC13996 |
Transistor, Bipolar, NPN, 30V, TO92-3 ONSEMI • Transistor Mounting : Through Hole • Power Dissipation : 500mW • No. of Pins : 3Pins
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- | - | Through Hole | 500mW | 3Pins | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC33740BU
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SC13992 |
Transistor, Bipolar, NPN, 45V, TO92-3 ONSEMI The BC33740BU is a NPN Epitaxial Silicon Transistor suitable for AF-driver stages, low-power output stages, switching and amplifier applications. • Complement to BC327
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- | - | Through Hole | 625mW | 3Pins | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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K/TRANS1
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SC13480 |
Through Hole Transistor Set, 100 Pieces WHADDA • 100 Piece transistor kit • 28x BC547B • 28x BC557B • 12x BC337 • 12x BC327 • 6x BC517 • 6x BC516 • 4x BD139 • 4x BD140
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K/DIODE1
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SC13479 |
Through Hole Diode Set, 120 Pieces WHADDA • 120 Piece diode kit • 2x 110B2 • 50x 1N4007 • 50x 1N4148 • 14x 1N5408 • 4x 6A6
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NX7002AK
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SC13942 |
Power MOSFET, N Channel, 60 V, 190 mA, 3 ohm, TO-236AB, Surface Mount NXP The NX7002AK is a N-channel enhancement mode Field-Effect Transistor (FET) in a Surface Mounted Device (SMD) plastic package using Trench MOSFET technology. • Very Fast Switching • ESD Protection Upto 1.5kV
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N Channel | 3ohm | Surface Mount | 265mW | 3Pins | - | - |