Semiconductors - Discretes

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Channel Type Drain Source On State Resistance Transistor Mounting Power Dissipation No. of Pins Product Range Qualification
 
 
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IRF2907ZPBF
IRF2907ZPBF - Power MOSFET, N Channel, 75 V, 170 A, 0.0045 ohm, TO-220, Through Hole

SC08253

Power MOSFET, N Channel, 75 V, 170 A, 0.0045 ohm, TO-220, Through Hole

INFINEON

The IRF2907ZPBF is a HEXFET® single N-channel Power MOSFET utilizes the latest processing techniques to achieve extremely low ON-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching spee...

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N Channel 0.0045ohm Through Hole 330W 3Pins - -
SR504
SR504 - Schottky Rectifier, 40 V, 5 A, Single, DO-201AD, 2 Pins, 550 mV

SC07449

Schottky Rectifier, 40 V, 5 A, Single, DO-201AD, 2 Pins, 550 mV

TAIWAN SEMICONDUCTOR

The SR504 is a Schottky Barrier Rectifier with moulded plastic case and solderable axial-lead as per MIL- STD-202 standard. • Colour band denotes cathode end • Low forward voltage drop • High current capability • High reliability • High surge current capab...

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- - - - 2Pins SR5xx Series -
BU406
BU406 - Transistor, NPN, TO220

SC06796

Transistor, NPN, TO220

MULTICOMP PRO

The BU406 is a NPN Power Transistor for horizontal deflection output stages of TV and CTV circuits. • High voltage • Collector-emitter sustaining voltage (Vceo (sus) = 400V minimum) • Low saturation voltage • Fast switching speed • Multicomp Pro products a...

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- - Through Hole 60W 3Pins Multicomp Pro Bipolar Power Transistors NPN -
ZVN3310F
ZVN3310F - Power MOSFET, N Channel, 100 V, 100 mA, 10 ohm, SOT-23, Surface Mount

SC07001

Power MOSFET, N Channel, 100 V, 100 mA, 10 ohm, SOT-23, Surface Mount

DIODES INC.

The ZVN3310F is an N-channel Enhancement Mode MOSFET utilizes a structure that combines low input capacitance with relatively low on-resistance and has an intrinsically higher pulse current handling capability in linear mode than a comparable trench techno...

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N Channel 10ohm Surface Mount 330mW 3Pins - -
IRF3205ZPBF
IRF3205ZPBF - Power MOSFET, Automotive, N Channel, 55 V, 110 A, 0.0065 ohm, TO-220AB, Through Hole

SC11149

Power MOSFET, Automotive, N Channel, 55 V, 110 A, 0.0065 ohm, TO-220AB, Through Hole

INFINEON

The IRF3205ZPBF is a HEXFET® N-channel Power MOSFET utilizes the latest processing techniques to achieve extremely low ON-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and i...

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N Channel 0.0065ohm Through Hole 170W 3Pins - -
HUF75339P3
HUF75339P3 - Power MOSFET, N Channel, 55 V, 75 A, 0.012 ohm, TO-220AB, Through Hole

SC12748

Power MOSFET, N Channel, 55 V, 75 A, 0.012 ohm, TO-220AB, Through Hole

ONSEMI

The HUF75339P3 is a 55V N-channel UltraFET Power MOSFET. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche...

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N Channel 0.012ohm Through Hole 200W 3Pins - -
GBU8D
GBU8D - Bridge Rectifier, Single Phase, 200 V, 8 A, SIP, 4 Pins, 1 V

SC07509

Bridge Rectifier, Single Phase, 200 V, 8 A, SIP, 4 Pins, 1 V

ONSEMI

The GBU8D is a Bridge Rectifier with moulded plastic construction and glass-passivated junction. This bridge rectifier is general usage and suitable for many different applications. • 140V Maximum RMS bridge input voltage • 16W Power dissipation • UL Certi...

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- - - - 4Pins GBU8D -
BZV85-C6V2
BZV85-C6V2 - Zener Single Diode, 6.2 V, 1 W, DO-41 (DO-204AL), 2 Pins, 200 °C

SC07091

Zener Single Diode, 6.2 V, 1 W, DO-41 (DO-204AL), 2 Pins, 200 °C

NXP

• Power Dissipation : 1W • No. of Pins : 2Pins • Product Range : BZV85

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- - - 1W 2Pins BZV85 -
BZX79-C7V5.
BZX79-C7V5. - Zener Single Diode, 7.5 V, 500 mW, DO-35, 2 Pins, 200 °C

SC05700

Zener Single Diode, 7.5 V, 500 mW, DO-35, 2 Pins, 200 °C

NXP

• Power Dissipation : 500mW • No. of Pins : 2Pins • Product Range : BZX79

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- - - 500mW 2Pins BZX79 -
MBR1045G
MBR1045G - Schottky Rectifier, 45 V, 10 A, Single, TO-220AC, 2 Pins, 570 mV

SC07390

Schottky Rectifier, 45 V, 10 A, Single, TO-220AC, 2 Pins, 570 mV

ONSEMI

The MBR1045G is a SWITCHMODE™ Power Schottky Barrier Rectifier with epoxy moulded case. • All external surfaces corrosion-resistant • Low forward voltage • Low power loss/high efficiency • UL94V-0 Flammability rating

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- - - - 2Pins - -
D45H8G
D45H8G - Transistor, PNP, TO220

SC06761

Transistor, PNP, TO220

ONSEMI

The D45H8G is a 10A PNP bipolar Power Transistor offers low collector-emitter saturation voltage. It can be used as general purpose power amplification and switching such as output or driver stages in applications such as switching regulators, converters a...

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- - Through Hole 70W 3Pins - -
GBU6D-E3/45
GBU6D-E3/45 - Bridge Rectifier, Single Phase, 200 V, 6 A, SIP, 4 Pins, 1 V

SC07504

Bridge Rectifier, Single Phase, 200 V, 6 A, SIP, 4 Pins, 1 V

VISHAY

• No. of Pins : 4Pins

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- - - - 4Pins - -
IRF3415PBF
IRF3415PBF - Power MOSFET, N Channel, 150 V, 37 A, 0.042 ohm, TO-220AB, Through Hole

SC11109

Power MOSFET, N Channel, 150 V, 37 A, 0.042 ohm, TO-220AB, Through Hole

INFINEON

The IRF3415PBF is a HEXFET® fifth generation single N-channel Power MOSFET utilizes advanced processing techniques to achieve extremely low ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design, pr...

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N Channel 0.042ohm Through Hole 150W 3Pins - -
SPW17N80C3
SPW17N80C3 - Power MOSFET, N Channel, 800 V, 17 A, 0.29 ohm, TO-247, Through Hole

SC11162

Power MOSFET, N Channel, 800 V, 17 A, 0.29 ohm, TO-247, Through Hole

INFINEON

The SPW17N80C3 is a Cool MOS™ Power Transistor with ultra low gate charge, new revolutionary high voltage technology, extreme dv/dt rated and periodic avalanche rated. • ±20V Gate-source voltage • 260°C Soldering temperature

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N Channel 0.29ohm Through Hole 208W 3Pins - -
SMBT3904
SMBT3904 - Transistor, NPN, SOT23

SC10623

Transistor, NPN, SOT23

INFINEON

• Transistor Mounting : Surface Mount • Power Dissipation : 330mW • No. of Pins : 3Pins

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- - Surface Mount 330mW 3Pins - -
FZT653
FZT653 - Transistor, NPN, SOT223

SC10978

Transistor, NPN, SOT223

DIODES INC.

The FZT653 is a NPN High Performance Transistor with matte tin-plated terminals, UL94V-0-flame rated moulded plastic case, solderable terminals as per MIL-STD-202, method 208 standard. • Complement to FZT753 • Level-1 per J-STD-020 moisture sensitivity • G...

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- - Surface Mount 2W 4Pins - -
2N5551
2N5551 - Si-N 180V 0.6A 0.31W TO92 Q14

SC06652

Si-N 180V 0.6A 0.31W TO92 Q14

ONSEMI

The 2N5551 is a through hole, NPN general purpose amplifier in TO-92 package. This device is designed for general purpose high voltage amplifiers and gas discharge display drivers. • Collector to emitter breakdown voltage of 160V • Collector to emitter sat...

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- - Through Hole 625mW 3Pins - -
IRF9520PBF
IRF9520PBF - Power MOSFET, P Channel, 100 V, 6 A, 0.6 ohm, TO-220AB, Through Hole

SC11123

Power MOSFET, P Channel, 100 V, 6 A, 0.6 ohm, TO-220AB, Through Hole

VISHAY

The IRF9520PBF is a -100V P-channel Power MOSFET provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The low thermal resistance contributes to its wide acceptance throughout...

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P Channel 0.6ohm Through Hole 40W 3Pins - -
BC548CTA
BC548CTA - Transistor, Bipolar, NPN, 30V, TO92-3

SC13995

Transistor, Bipolar, NPN, 30V, TO92-3

ONSEMI

The BC548CTA is a NPN epitaxial silicon Bipolar Transistor suitable for switching and amplifier applications. • Complement to BC558

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- - Through Hole 500mW 3Pins - -
BZX84C12
BZX84C12 - Zener Single Diode, 12 V, 350 mW, SOT-23, 3 Pins, 150 °C, Surface Mount

SC12738

Zener Single Diode, 12 V, 350 mW, SOT-23, 3 Pins, 150 °C, Surface Mount

DIODES INC.

The BZX84C12 is a surface mount Zener Diode with moulded plastic case and matte tin annealed over Alloy 42 lead frame (lead-free plating) terminals. It is ideally suited for automated assembly processes. • Planar die construction • 350mW Power dissipation ...

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- - - 350mW 3Pins BZX84C -
BC549BTA
BC549BTA - Transistor, Bipolar, NPN, 30V, TO92-3

SC13996

Transistor, Bipolar, NPN, 30V, TO92-3

ONSEMI

• Transistor Mounting : Through Hole • Power Dissipation : 500mW • No. of Pins : 3Pins

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- - Through Hole 500mW 3Pins - -
BC33740BU
BC33740BU - Transistor, Bipolar, NPN, 45V, TO92-3

SC13992

Transistor, Bipolar, NPN, 45V, TO92-3

ONSEMI

The BC33740BU is a NPN Epitaxial Silicon Transistor suitable for AF-driver stages, low-power output stages, switching and amplifier applications. • Complement to BC327

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- - Through Hole 625mW 3Pins - -
K/TRANS1
K/TRANS1 - Through Hole Transistor Set, 100 Pieces

SC13480

Through Hole Transistor Set, 100 Pieces

WHADDA

• 100 Piece transistor kit • 28x BC547B • 28x BC557B • 12x BC337 • 12x BC327 • 6x BC517 • 6x BC516 • 4x BD139 • 4x BD140

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- - - - - - -
K/DIODE1
K/DIODE1 - Through Hole Diode Set, 120 Pieces

SC13479

Through Hole Diode Set, 120 Pieces

WHADDA

• 120 Piece diode kit • 2x 110B2 • 50x 1N4007 • 50x 1N4148 • 14x 1N5408 • 4x 6A6

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- - - - - - -
NX7002AK
NX7002AK - Power MOSFET, N Channel, 60 V, 190 mA, 3 ohm, TO-236AB, Surface Mount

SC13942

Power MOSFET, N Channel, 60 V, 190 mA, 3 ohm, TO-236AB, Surface Mount

NXP

The NX7002AK is a N-channel enhancement mode Field-Effect Transistor (FET) in a Surface Mounted Device (SMD) plastic package using Trench MOSFET technology. • Very Fast Switching • ESD Protection Upto 1.5kV

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N Channel 3ohm Surface Mount 265mW 3Pins - -