Semiconductors - Discretes
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Manufacturer Part No | Order Code | Description / Manufacturer | Availability | Price For |
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Quantity | Drain Source Voltage Vds | Continuous Drain Current Id | Transistor Case Style | Rds(on) Test Voltage | Gate Source Threshold Voltage Max | No. of Pins | Operating Temperature Max | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BSS138....
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SC06981 |
MOSFET, N, SOT23 ONSEMI • Drain Source Voltage Vds : 50V • Continuous Drain Current Id : 220mA • Transistor Case Style : SOT-23 • Rds(on) Test Voltage : 10V • Gate Source Threshold Voltage Max : 1.3V • No. of Pins : 3Pins • Operating Temperature Max : 150°C
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50V | 220mA | SOT-23 | 10V | 1.3V | 3Pins | 150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BZV55-C8V2
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SC11221 |
Zener Single Diode, 8.2 V, 500 mW, SOD-80C, 2 Pins, 200 °C, Surface Mount NXP • No. of Pins : 2Pins • Operating Temperature Max : 200°C
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- | - | - | - | - | 2Pins | 200°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BTA06-600BRG
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SC07577 |
Triac, 6A, 600V, TO220AB STMICROELECTRONICS The BTA06-600BRG is a 3-pin Standard Insulated TRIAC for general purpose AC switching and can be used as an ON/OFF function. The BTA series TRIAC provides voltage insulated tab by using an internal ceramic pad. • High commutation performance
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1+ €1.1424 (€1.41) 10+ €0.9401 (€1.16) 100+ €0.8092 (€1.00) |
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- | - | - | - | - | 3Pins | 125°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BAV21
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SC07321 |
Small Signal Diode, Single, 250 V, 250 mA, 1.25 V, 50 ns, 1 A NXP The BAV21 is a Switching Diode fabricated in planar technology, high switching speed and very low capacitance. This switching diode is suitable for general purposes. • 625mA Repetitive peak forward current • 400mW Total power dissipation • 5pF Capacitance
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- | - | - | - | - | 2Pins | 175°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRLU024NPBF
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SC11074 |
Power MOSFET, N Channel, 55 V, 17 A, 0.065 ohm, TO-251AA, Through Hole INFINEON The IRLU024NPBF is a 55V single N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using advanced planar technology. • 175°C Operating temperature • Dynamic dV/dt rating • Fully avalanche rated •...
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55V | 17A | - | 10V | 2V | 3Pins | 175°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BZV85-C12
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SC07097 |
Zener Single Diode, 12 V, 1 W, DO-41 (DO-204AL), 2 Pins, 200 °C NXP The BZV85-C12 is a medium-power voltage Regulator Diode for stabilization purposes. The diode is available in the normalized E24 approximately ±5 % tolerance range. • 60W Maximum Non-repetitive Peak Reverse Power Dissipation • ±5% Tolerance
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- | - | - | - | - | 2Pins | 200°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRF830APBF
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SC11087 |
Power MOSFET, N Channel, 500 V, 5 A, 1.4 ohm, TO-220AB, Through Hole VISHAY The IRF830APBF is a 500V N-channel SMPS MOSFET with low gate charge Qg results in simple drive requirement. It operates at high frequency with hard switching application. Suitable for SMPS, uninterruptable power supply and high speed power switching. • Dyn...
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500V | 5A | TO-220AB | 10V | 4.5V | 3Pins | 150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SPA20N60C3
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SC11115 |
Power MOSFET, N Channel, 650 V, 20.7 A, 0.16 ohm, TO-220AB, Through Hole INFINEON The SPA20N60C3 is a 650V N-channel CoolMOS™ Power MOSFET with low specific on-state resistance. The CoolMOS™ MOSFET offers a significant reduction of conduction, switching and driving losses and enable high power density and efficiency for superior power c...
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1+ €3.57 (€4.39) 25+ €3.2606 (€4.01) 100+ €2.9631 (€3.64) |
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650V | 20.7A | TO-220AB | 10V | 3V | 3Pins | 150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BZT03C16-TR
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SC07133 |
Zener Single Diode, 16 V, 3.25 W, SOD-57, 2 Pins, 175 °C, Through Hole VISHAY The BZT03C16-TR is a Zener Diode with surge current characteristics. The BZT03 series Zener diode has glass passivated junction and Zener voltage of 16V. • Clamping time in picoseconds • 25mA Test current • 6Ω at 15mA Dynamic resistance • 5μA at 13V Maximu...
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- | - | - | - | - | 2Pins | 175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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ZVN2106G
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SC11051 |
Power MOSFET, N Channel, 60 V, 700 mA, 2 ohm, SOT-223, Surface Mount DIODES INC. The ZVN2106G is a 60V N-channel Enhancement Mode Vertical MOSFET with matte tin plated terminals. The MOSFET is ideal for solenoids/relay driver for automotive and DC-DC converters. • Maximum continuous drain current • AEC-Q101 qualified • UL94V-0 Flammabi...
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60V | 700mA | SOT-223 | 10V | 2.4V | 3Pins | 150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRF740APBF
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SC11085 |
Power MOSFET, N Channel, 400 V, 10 A, 0.55 ohm, TO-220AB, Through Hole VISHAY The IRF740APBF is a 400V N-channel Power MOSFET with low gate charge Qg results in simple drive requirement. It operates at high frequency with hard switching application. Suitable for SMPS and high speed power switching. • Improved gate, avalanche and dyn...
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400V | 10A | TO-220AB | 10V | 4V | 3Pins | 150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MUR460RLG
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SC07381 |
Fast / Ultrafast Diode, 600 V, 4 A, Single, 1.28 V, 75 ns, 70 A ONSEMI The MUR460RLG is a SWITCHMODE™ ultra-fast axial-lead Power Rectifier with moulded epoxy case. This state-of-the-art device is design for use in switching power supplies, inverters and as free-wheeling diodes. • Cathode indicated by polarity band • All exte...
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1+ €0.2737 (€0.34) 10+ €0.238 (€0.29) 100+ €0.2142 (€0.26) |
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- | - | - | - | - | - | 175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SSB44-E3/52T
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SC11414 |
Schottky Rectifier, 40 V, 4 A, Single, DO-214AA (SMB), 2 Pins, 490 mV VISHAY The SSB44-E3/52T is a surface-mount high-current density Schottky Rectifier with solderable matte-tin plated terminals. It is suitable for use in low voltage high frequency inverters, free-wheeling, DC/DC converters and polarity protection applications. • ...
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- | - | - | - | - | 2Pins | 150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC856
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SC06598 |
Transistor, PNP SOT23 NXP • Transistor Case Style : SOT-23 • No. of Pins : 3Pins • Operating Temperature Max : 150°C
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- | - | SOT-23 | - | - | 3Pins | 150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRFP4668PBF
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SC11169 |
Power MOSFET, N Channel, 200 V, 130 A, 0.008 ohm, TO-247AC, Through Hole INFINEON The IRFP4668PBF is 200V single N channel HEXFET power MOSFET in TO-247AC package. This MOSFET featured with improved gate, avalanche and dynamic dV/dt ruggedness, fast switching. Applicable at high efficiency synchronous rectification in SMPS, uninterrupti...
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200V | 130A | - | 30V | 5V | 3Pins | 175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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STP10NK60Z
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SC08225 |
Power MOSFET, N Channel, 600 V, 10 A, 0.75 ohm, TO-220, Through Hole STMICROELECTRONICS The STP10NK60Z is a SuperMESH™ N-channel Power MOSFET offers Zener-protection and minimized gate charge. This Power MOSFET developed using STMicroelectronics' SuperMESH™ technology, achieved through optimization of ST's well-established strip based PowerME...
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600V | 10A | TO-220 | 10V | 3.75V | 3Pins | 150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MJ15016G
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SC09270 |
Transistor, PNP, TO3 ONSEMI The MJ15016G is a -120V Silicon PNP Bipolar Complementary High Power Transistor designed for high power audio, disk head positioners and other linear applications. The transistor can also be used in power switching circuits such as relay or solenoid driver...
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- | - | TO-3 | - | - | 2Pins | 200°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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FDN304P
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SC07004 |
Power MOSFET, P Channel, 20 V, 2.4 A, 0.052 ohm, SuperSOT, Surface Mount ONSEMI The FDN304P is P channel 1.8V specified PowerTrench MOSFET in superSOT-3 package. This product features fast switching speed, high performance trench technology for extremely low Rds(on), thus suite for applications such as battery management, load switch ...
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20V | 2.4A | - | 4.5V | 800mV | 3Pins | 150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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1N5341BG
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SC07169 |
Zener Single Diode, 6.2 V, 5 W, 017AA, 2 Pins, 200 °C, Through Hole ONSEMI The 1N5333B series Surmetic™ Voltage Regulator Zener Diode with tight limits and better operating characteristics that reflect the superior capabilities of silicon-oxide passivated junctions. All this in an axial lead, transfer-moulded plastic package that...
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- | - | - | - | - | 2Pins | 200°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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TIP32C
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SC06765 |
Transistor, PNP, TO220 MULTICOMP PRO The TIP32C is a high-performance transistor designed to handle high currents and voltages, making it an ideal choice for demanding applications such as audio amplifiers, power supplies, and switching circuits. With its high current handling capability and ...
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- | - | TO-220 | - | - | 3Pins | 150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BZT03C120-TR
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SC07153 |
Zener Single Diode, 120 V, 3.25 W, SOD-57, 2 Pins, 175 °C, Through Hole VISHAY The BZT03 series Zener Diode with glass passivated junction and hermetically sealed package. It is used in medium power voltage regulators and medium power transient suppression circuits. • Clamping time in picoseconds • UL94V-0 Moulding compound flammabil...
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- | - | - | - | - | 2Pins | 175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BZT03C130-TR
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SC07154 |
Zener Single Diode, 130 V, 3.25 W, SOD-57, 2 Pins, 175 °C, Through Hole VISHAY The BZT03C130-TR is a Zener Diode with surge current characteristics. The BZT03 series Zener diode has glass passivated junction and Zener voltage of 130V. • Clamping time in picoseconds • 5mA Test current • 110Ω at 300mA Dynamic resistance • 5μA at 110V M...
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- | - | - | - | - | 2Pins | 175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BCX38C
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SC06835 |
Darlington Transistor, E-Line DIODES INC. The BCX38C is a NPN silicon planar medium-power Darlington Transistor offers 80V collector-base voltage and 800mA continuous collector current. • -55 to 200°C Operating temperature range
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- | - | - | - | - | 3Pins | 200°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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NDS352AP
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SC11034 |
Power MOSFET, P Channel, 30 V, 900 mA, 0.25 ohm, SuperSOT, Surface Mount ONSEMI The NDS352AP is a P-channel Logic Level Enhancement Mode Power Field Effect Transistor produced using high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device is particularly sui...
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30V | 900mA | - | 10V | 1.7V | 3Pins | 150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BZT03C91-TR
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SC07151 |
Zener Single Diode, 91 V, 3.25 W, SOD-57, 2 Pins, 175 °C, Through Hole VISHAY • BZT03 series zener diode with surge current specification in 2 pin SOD-57 package • Glass passivated junction • Hermetically sealed package • Clamping time in picoseconds • Suitable for medium power voltage regulators and medium power transient suppress...
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- | - | - | - | - | 2Pins | 175°C |