Semiconductors - Discretes

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Drain Source Voltage Vds Continuous Drain Current Id Transistor Case Style Rds(on) Test Voltage Gate Source Threshold Voltage Max No. of Pins Operating Temperature Max
 
 
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BSS138....
BSS138.... - MOSFET, N, SOT23

SC06981

MOSFET, N, SOT23

ONSEMI

• Drain Source Voltage Vds : 50V • Continuous Drain Current Id : 220mA • Transistor Case Style : SOT-23 • Rds(on) Test Voltage : 10V • Gate Source Threshold Voltage Max : 1.3V • No. of Pins : 3Pins • Operating Temperature Max : 150°C

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50V 220mA SOT-23 10V 1.3V 3Pins 150°C
BZV55-C8V2
BZV55-C8V2 - Zener Single Diode, 8.2 V, 500 mW, SOD-80C, 2 Pins, 200 °C, Surface Mount

SC11221

Zener Single Diode, 8.2 V, 500 mW, SOD-80C, 2 Pins, 200 °C, Surface Mount

NXP

• No. of Pins : 2Pins • Operating Temperature Max : 200°C

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- - - - - 2Pins 200°C
BTA06-600BRG
BTA06-600BRG - Triac, 6A, 600V, TO220AB

SC07577

Triac, 6A, 600V, TO220AB

STMICROELECTRONICS

The BTA06-600BRG is a 3-pin Standard Insulated TRIAC for general purpose AC switching and can be used as an ON/OFF function. The BTA series TRIAC provides voltage insulated tab by using an internal ceramic pad. • High commutation performance

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- - - - - 3Pins 125°C
BAV21
BAV21 - Small Signal Diode, Single, 250 V, 250 mA, 1.25 V, 50 ns, 1 A

SC07321

Small Signal Diode, Single, 250 V, 250 mA, 1.25 V, 50 ns, 1 A

NXP

The BAV21 is a Switching Diode fabricated in planar technology, high switching speed and very low capacitance. This switching diode is suitable for general purposes. • 625mA Repetitive peak forward current • 400mW Total power dissipation • 5pF Capacitance

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- - - - - 2Pins 175°C
IRLU024NPBF
IRLU024NPBF - Power MOSFET, N Channel, 55 V, 17 A, 0.065 ohm, TO-251AA, Through Hole

SC11074

Power MOSFET, N Channel, 55 V, 17 A, 0.065 ohm, TO-251AA, Through Hole

INFINEON

The IRLU024NPBF is a 55V single N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using advanced planar technology. • 175°C Operating temperature • Dynamic dV/dt rating • Fully avalanche rated •...

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55V 17A - 10V 2V 3Pins 175°C
BZV85-C12
BZV85-C12 - Zener Single Diode, 12 V, 1 W, DO-41 (DO-204AL), 2 Pins, 200 °C

SC07097

Zener Single Diode, 12 V, 1 W, DO-41 (DO-204AL), 2 Pins, 200 °C

NXP

The BZV85-C12 is a medium-power voltage Regulator Diode for stabilization purposes. The diode is available in the normalized E24 approximately ±5 % tolerance range. • 60W Maximum Non-repetitive Peak Reverse Power Dissipation • ±5% Tolerance

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- - - - - 2Pins 200°C
IRF830APBF
IRF830APBF - Power MOSFET, N Channel, 500 V, 5 A, 1.4 ohm, TO-220AB, Through Hole

SC11087

Power MOSFET, N Channel, 500 V, 5 A, 1.4 ohm, TO-220AB, Through Hole

VISHAY

The IRF830APBF is a 500V N-channel SMPS MOSFET with low gate charge Qg results in simple drive requirement. It operates at high frequency with hard switching application. Suitable for SMPS, uninterruptable power supply and high speed power switching. • Dyn...

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500V 5A TO-220AB 10V 4.5V 3Pins 150°C
SPA20N60C3
SPA20N60C3 - Power MOSFET, N Channel, 650 V, 20.7 A, 0.16 ohm, TO-220AB, Through Hole

SC11115

Power MOSFET, N Channel, 650 V, 20.7 A, 0.16 ohm, TO-220AB, Through Hole

INFINEON

The SPA20N60C3 is a 650V N-channel CoolMOS™ Power MOSFET with low specific on-state resistance. The CoolMOS™ MOSFET offers a significant reduction of conduction, switching and driving losses and enable high power density and efficiency for superior power c...

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650V 20.7A TO-220AB 10V 3V 3Pins 150°C
BZT03C16-TR
BZT03C16-TR - Zener Single Diode, 16 V, 3.25 W, SOD-57, 2 Pins, 175 °C, Through Hole

SC07133

Zener Single Diode, 16 V, 3.25 W, SOD-57, 2 Pins, 175 °C, Through Hole

VISHAY

The BZT03C16-TR is a Zener Diode with surge current characteristics. The BZT03 series Zener diode has glass passivated junction and Zener voltage of 16V. • Clamping time in picoseconds • 25mA Test current • 6Ω at 15mA Dynamic resistance • 5μA at 13V Maximu...

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- - - - - 2Pins 175°C
ZVN2106G
ZVN2106G - Power MOSFET, N Channel, 60 V, 700 mA, 2 ohm, SOT-223, Surface Mount

SC11051

Power MOSFET, N Channel, 60 V, 700 mA, 2 ohm, SOT-223, Surface Mount

DIODES INC.

The ZVN2106G is a 60V N-channel Enhancement Mode Vertical MOSFET with matte tin plated terminals. The MOSFET is ideal for solenoids/relay driver for automotive and DC-DC converters. • Maximum continuous drain current • AEC-Q101 qualified • UL94V-0 Flammabi...

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60V 700mA SOT-223 10V 2.4V 3Pins 150°C
IRF740APBF
IRF740APBF - Power MOSFET, N Channel, 400 V, 10 A, 0.55 ohm, TO-220AB, Through Hole

SC11085

Power MOSFET, N Channel, 400 V, 10 A, 0.55 ohm, TO-220AB, Through Hole

VISHAY

The IRF740APBF is a 400V N-channel Power MOSFET with low gate charge Qg results in simple drive requirement. It operates at high frequency with hard switching application. Suitable for SMPS and high speed power switching. • Improved gate, avalanche and dyn...

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400V 10A TO-220AB 10V 4V 3Pins 150°C
MUR460RLG
MUR460RLG - Fast / Ultrafast Diode, 600 V, 4 A, Single, 1.28 V, 75 ns, 70 A

SC07381

Fast / Ultrafast Diode, 600 V, 4 A, Single, 1.28 V, 75 ns, 70 A

ONSEMI

The MUR460RLG is a SWITCHMODE™ ultra-fast axial-lead Power Rectifier with moulded epoxy case. This state-of-the-art device is design for use in switching power supplies, inverters and as free-wheeling diodes. • Cathode indicated by polarity band • All exte...

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- - - - - - 175°C
SSB44-E3/52T
SSB44-E3/52T - Schottky Rectifier, 40 V, 4 A, Single, DO-214AA (SMB), 2 Pins, 490 mV

SC11414

Schottky Rectifier, 40 V, 4 A, Single, DO-214AA (SMB), 2 Pins, 490 mV

VISHAY

The SSB44-E3/52T is a surface-mount high-current density Schottky Rectifier with solderable matte-tin plated terminals. It is suitable for use in low voltage high frequency inverters, free-wheeling, DC/DC converters and polarity protection applications. • ...

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- - - - - 2Pins 150°C
BC856
BC856 - Transistor, PNP SOT23

SC06598

Transistor, PNP SOT23

NXP

• Transistor Case Style : SOT-23 • No. of Pins : 3Pins • Operating Temperature Max : 150°C

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- - SOT-23 - - 3Pins 150°C
IRFP4668PBF
IRFP4668PBF - Power MOSFET, N Channel, 200 V, 130 A, 0.008 ohm, TO-247AC, Through Hole

SC11169

Power MOSFET, N Channel, 200 V, 130 A, 0.008 ohm, TO-247AC, Through Hole

INFINEON

The IRFP4668PBF is 200V single N channel HEXFET power MOSFET in TO-247AC package. This MOSFET featured with improved gate, avalanche and dynamic dV/dt ruggedness, fast switching. Applicable at high efficiency synchronous rectification in SMPS, uninterrupti...

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200V 130A - 30V 5V 3Pins 175°C
STP10NK60Z
STP10NK60Z - Power MOSFET, N Channel, 600 V, 10 A, 0.75 ohm, TO-220, Through Hole

SC08225

Power MOSFET, N Channel, 600 V, 10 A, 0.75 ohm, TO-220, Through Hole

STMICROELECTRONICS

The STP10NK60Z is a SuperMESH™ N-channel Power MOSFET offers Zener-protection and minimized gate charge. This Power MOSFET developed using STMicroelectronics' SuperMESH™ technology, achieved through optimization of ST's well-established strip based PowerME...

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600V 10A TO-220 10V 3.75V 3Pins 150°C
MJ15016G
MJ15016G - Transistor, PNP, TO3

SC09270

Transistor, PNP, TO3

ONSEMI

The MJ15016G is a -120V Silicon PNP Bipolar Complementary High Power Transistor designed for high power audio, disk head positioners and other linear applications. The transistor can also be used in power switching circuits such as relay or solenoid driver...

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- - TO-3 - - 2Pins 200°C
FDN304P
FDN304P - Power MOSFET, P Channel, 20 V, 2.4 A, 0.052 ohm, SuperSOT, Surface Mount

SC07004

Power MOSFET, P Channel, 20 V, 2.4 A, 0.052 ohm, SuperSOT, Surface Mount

ONSEMI

The FDN304P is P channel 1.8V specified PowerTrench MOSFET in superSOT-3 package. This product features fast switching speed, high performance trench technology for extremely low Rds(on), thus suite for applications such as battery management, load switch ...

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20V 2.4A - 4.5V 800mV 3Pins 150°C
1N5341BG
1N5341BG - Zener Single Diode, 6.2 V, 5 W, 017AA, 2 Pins, 200 °C, Through Hole

SC07169

Zener Single Diode, 6.2 V, 5 W, 017AA, 2 Pins, 200 °C, Through Hole

ONSEMI

The 1N5333B series Surmetic™ Voltage Regulator Zener Diode with tight limits and better operating characteristics that reflect the superior capabilities of silicon-oxide passivated junctions. All this in an axial lead, transfer-moulded plastic package that...

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- - - - - 2Pins 200°C
TIP32C
TIP32C - Transistor, PNP, TO220

SC06765

Transistor, PNP, TO220

MULTICOMP PRO

The TIP32C is a high-performance transistor designed to handle high currents and voltages, making it an ideal choice for demanding applications such as audio amplifiers, power supplies, and switching circuits. With its high current handling capability and ...

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- - TO-220 - - 3Pins 150°C
BZT03C120-TR
BZT03C120-TR - Zener Single Diode, 120 V, 3.25 W, SOD-57, 2 Pins, 175 °C, Through Hole

SC07153

Zener Single Diode, 120 V, 3.25 W, SOD-57, 2 Pins, 175 °C, Through Hole

VISHAY

The BZT03 series Zener Diode with glass passivated junction and hermetically sealed package. It is used in medium power voltage regulators and medium power transient suppression circuits. • Clamping time in picoseconds • UL94V-0 Moulding compound flammabil...

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- - - - - 2Pins 175°C
BZT03C130-TR
BZT03C130-TR - Zener Single Diode, 130 V, 3.25 W, SOD-57, 2 Pins, 175 °C, Through Hole

SC07154

Zener Single Diode, 130 V, 3.25 W, SOD-57, 2 Pins, 175 °C, Through Hole

VISHAY

The BZT03C130-TR is a Zener Diode with surge current characteristics. The BZT03 series Zener diode has glass passivated junction and Zener voltage of 130V. • Clamping time in picoseconds • 5mA Test current • 110Ω at 300mA Dynamic resistance • 5μA at 110V M...

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- - - - - 2Pins 175°C
BCX38C
BCX38C - Darlington Transistor, E-Line

SC06835

Darlington Transistor, E-Line

DIODES INC.

The BCX38C is a NPN silicon planar medium-power Darlington Transistor offers 80V collector-base voltage and 800mA continuous collector current. • -55 to 200°C Operating temperature range

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- - - - - 3Pins 200°C
NDS352AP
NDS352AP - Power MOSFET, P Channel, 30 V, 900 mA, 0.25 ohm, SuperSOT, Surface Mount

SC11034

Power MOSFET, P Channel, 30 V, 900 mA, 0.25 ohm, SuperSOT, Surface Mount

ONSEMI

The NDS352AP is a P-channel Logic Level Enhancement Mode Power Field Effect Transistor produced using high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device is particularly sui...

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30V 900mA - 10V 1.7V 3Pins 150°C
BZT03C91-TR
BZT03C91-TR - Zener Single Diode, 91 V, 3.25 W, SOD-57, 2 Pins, 175 °C, Through Hole

SC07151

Zener Single Diode, 91 V, 3.25 W, SOD-57, 2 Pins, 175 °C, Through Hole

VISHAY

• BZT03 series zener diode with surge current specification in 2 pin SOD-57 package • Glass passivated junction • Hermetically sealed package • Clamping time in picoseconds • Suitable for medium power voltage regulators and medium power transient suppress...

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- - - - - 2Pins 175°C