Semiconductors - Discretes
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Manufacturer Part No | Order Code | Description / Manufacturer | Availability | Price For |
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Quantity | Repetitive Peak Reverse Voltage | Average Forward Current | Diode Configuration | Diode Case Style | No. of Pins | Forward Voltage Max | Forward Surge Current | Operating Temperature Max | Diode Mounting | Product Range | Qualification | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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STPS3L60U
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SC11436 |
Schottky Rectifier, 60 V, 3 A, Single, DO-214AA (SMB), 2 Pins, 620 mV STMICROELECTRONICS The STPS3L60U is an axial-leaded surface mount power Schottky Rectifier features negligible switching losses and avalanche capability specified. It is suitable for low voltage, high frequency inverter and small battery chargers and high frequency DC-to-DC ...
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60V | 3A | Single | DO-214AA (SMB) | 2Pins | 620mV | 100A | 150°C | Surface Mount | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BD680
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SC06882 |
Darlington Transistor, TO126 STMICROELECTRONICS The BD680 is a PNP complementary power Darlington Transistor manufactured in Planar Base Island technology. It offers monolithic Darlington configuration with integrated anti-parallel collector-emitter diode. • Good hFE linearity • High fT frequency
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1+ €0.4046 (€0.50) 10+ €0.3332 (€0.41) 100+ €0.2856 (€0.35) 500+ €0.2618 (€0.32) |
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- | - | - | - | 3Pins | - | - | 150°C | - | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRLZ34NPBF
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SC11125 |
Power MOSFET, N Channel, 55 V, 27 A, 0.035 ohm, TO-220AB, Through Hole INFINEON The IRLZ34NPBF is a N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known ...
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1+ €1.5113 (€1.86) 25+ €1.2495 (€1.54) 100+ €1.0591 (€1.30) |
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- | - | - | - | 3Pins | - | - | 175°C | - | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
GBU402
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SC09276 |
Bridge Rectifier, Glass Passivated, Single Phase, 100 V, 4 A, SIP, 4 Pins, 1 V TAIWAN SEMICONDUCTOR The GBU402 is a 4-pin single-phase glass passivated Standard Bridge Rectifier Diode with moulded plastic body case. It has terminals leads solderable per MIL-STD- 750, Method 2026 and high temperature soldering guaranteed 250°C/10 seconds/0.375-inch lead l...
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1+ €0.6545 (€0.81) 10+ €0.5831 (€0.72) 100+ €0.5355 (€0.66) |
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100V | 4A | - | - | 4Pins | 1V | 150A | 150°C | - | GBU40x Series | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
GSIB1520-E3/45
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SC11487 |
Bridge Rectifier, Single Phase, 200 V, 15 A, SIP, 4 Pins, 950 mV VISHAY The GSIB1520-E3/45 is a 4-pin single-phase in-line Bridge Rectifier Diode with high surge current capability. It is used in general purpose AC/DC bridge full wave rectification for home appliances and office equipment applications. • UL94V-0 Flammability r...
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1+ €1.9278 (€2.37) 25+ €1.7493 (€2.15) 100+ €1.5589 (€1.92) |
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200V | 15A | - | - | 4Pins | 950mV | 240A | 150°C | - | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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D44H8G
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SC06751 |
Transistor, NPN, TO220 ONSEMI The D44H8G is a 10A NPN bipolar Power Transistor offers low collector-emitter saturation voltage. It can be used as general purpose power amplification and switching such as output or driver stages in applications such as switching regulators, converters a...
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1+ €1.2614 (€1.55) 10+ €1.0591 (€1.30) 100+ €0.8925 (€1.10) |
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- | - | - | - | 3Pins | - | - | 150°C | - | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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1N5365BG
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SC07191 |
Zener Single Diode, 36 V, 5 W, 017AA, 2 Pins, 200 °C, Through Hole ONSEMI The 1N5333B series Surmetic™ Voltage Regulator Zener Diode with tight limits and better operating characteristics that reflect the superior capabilities of silicon-oxide passivated junctions. All this in an axial lead, transfer-moulded plastic package that...
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5+ €0.238 (€0.29) 25+ €0.2142 (€0.26) 100+ €0.1785 (€0.22) |
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- | - | - | 017AA | 2Pins | - | - | 200°C | Through Hole | 1N53 Series | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BZV55-C3V3
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SC11209 |
Zener Single Diode, 3.3 V, 500 mW, SOD-80C, 2 Pins, 200 °C, Surface Mount NXP • Diode Case Style : SOD-80C • No. of Pins : 2Pins • Operating Temperature Max : 200°C • Diode Mounting : Surface Mount • Product Range : BZV55
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- | - | - | SOD-80C | 2Pins | - | - | 200°C | Surface Mount | BZV55 | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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ZVN4206A
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SC06966 |
Power MOSFET, N Channel, 60 V, 600 mA, 1.5 ohm, TO-226AA, Through Hole DIODES INC. The ZVN4206A is a 60V E-Line N-channel Enhancement Mode Vertical DMOS FET with 1Ω resistance and 700mW power dissipation.
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5+ €0.8687 (€1.07) 25+ €0.7259 (€0.89) 100+ €0.6188 (€0.76) |
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- | - | - | - | 3Pins | - | - | 150°C | - | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BZV85-C6V8
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SC07092 |
Zener Single Diode, 6.8 V, 1 W, DO-41 (DO-204AL), 2 Pins, 200 °C NXP The BZV85 series medium-power voltage regulator Zener Diode designed in a small hermetically sealed leaded SOD66 (DO-41) glass package. It is suitable for general regulation functions. • 1.3W Total power dissipation (maximum) • ±5% Tolerance series (approx...
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10+ €0.1071 (€0.13) 100+ €0.0952 (€0.12) 1000+ €0.0714 (€0.09) |
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- | - | - | DO-41 (DO-204AL) | 2Pins | - | - | 200°C | - | BZV85 | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SK14B
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SC11413 |
Schottky Rectifier, Miniature, 40 V, 1 A, Single, DO-214AA (SMB), 2 Pins, 500 mV TAIWAN SEMICONDUCTOR The SK14B is a surface-mount Schottky Barrier Rectifier with moulded plastic case and solder-plated terminals. • Polarity is indicated by cathode band • Metal to silicon rectifier, majority carrier conduction • Low-forward-voltage drop • Easy pick and plac...
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40V | 1A | Single | DO-214AA (SMB) | 2Pins | 500mV | 30A | 125°C | Surface Mount | SK | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC635
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SC06696 |
Transistor, NPN, TO92 MULTICOMP PRO The BC635 is a NPN silicon planar epitaxial medium power Bipolar Transistor with high performance, low frequency devices typically with current ratings 1A up to 1W power dissipation. • Driver stages of audio amplifier application • 45°C/W Junction-to-case ...
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5+ €0.2023 (€0.25) 25+ €0.1547 (€0.19) 100+ €0.119 (€0.15) |
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- | - | - | - | 3Pins | - | - | 150°C | - | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRF610PBF
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SC11106 |
Power MOSFET, N Channel, 200 V, 3.3 A, 1.5 ohm, TO-220AB, Through Hole VISHAY The IRF610PBF is a 200V N-channel Power MOSFET, third generation power MOSFET provides the designer with the best combination of fast switching, ruggedized device design and low on-resistance. The package is universally preferred for all commercial-industr...
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1+ €0.6902 (€0.85) 25+ €0.5712 (€0.70) |
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- | - | - | - | 3Pins | - | - | 150°C | - | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BAT17
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SC11310 |
Small Signal Schottky Diode, Single, 4 V, 30 mA, 350 mV, 150 °C NXP The BAT17 is a planar Schottky Barrier Diode encapsulated in a SOT223 plastic SMD package. It is used for low UHF mixers, sampling circuits, modulators and phase detection. • Low forward voltage • Low capacitance • AEC-Q101 qualified
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5+ €0.0952 (€0.12) 25+ €0.0833 (€0.10) 1000+ €0.0714 (€0.09) |
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4V | 30mA | Single | SOT-23 | 3Pins | 350mV | - | 150°C | Surface Mount | BAT17 | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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GBU405
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SC09278 |
Bridge Rectifier, Glass Passivated, Single Phase, 600 V, 4 A, SIP, 4 Pins, 1 V TAIWAN SEMICONDUCTOR The GBU405 from Taiwan Semiconductor is single phase, through hole glass passivated bridge rectifier in GBU package. It has high case dielectric strength of 1500VRMS. • IEC 61249-2-21, UL recognized file E326243 • Ideal for printed circuit board • High sur...
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1+ €0.5712 (€0.70) 10+ €0.4879 (€0.60) 100+ €0.4403 (€0.54) |
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600V | 4A | - | - | 4Pins | 1V | 150A | 150°C | - | GBU40x Series | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BTA16-800BRG
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SC07587 |
Triac, 16A, 800V, TO220AB STMICROELECTRONICS The BTA16-800BRG is a 3-pin Standard Insulated TRIAC for general purpose AC switching and can be used as ON/OFF function. The BTA series TRIAC provides voltage insulated tab by using an internal ceramic pad. • High commutation performance • Low thermal res...
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1+ €1.428 (€1.76) 10+ €1.19 (€1.46) 100+ €1.0115 (€1.24) |
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- | - | - | - | 3Pins | - | - | 125°C | - | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRF840APBF
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SC11081 |
Power MOSFET, N Channel, 500 V, 8 A, 0.85 ohm, TO-220AB, Through Hole VISHAY The IRF840APBF is a N-channel Power MOSFET with low gate charge and improved gate, avalanche and dynamic dv/dt ruggedness. • Fully characterized capacitance and avalanche voltage and current • Effective Coss specified • ±30V Gate-source voltage
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- | - | - | - | 3Pins | - | - | 150°C | - | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SPA11N80C3
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SC11117 |
Power MOSFET, N Channel, 800 V, 11 A, 0.39 ohm, TO-220FP, Through Hole INFINEON The SPA11N80C3 is a 800V N-channel CoolMOS™ Power MOSFET with low specific on-state resistance. The CoolMOS™ MOSFET offers a significant reduction of conduction, switching and driving losses and enable high power density and efficiency for superior power c...
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1+ €2.8322 (€3.48) 25+ €1.904 (€2.34) 100+ €1.7612 (€2.17) |
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- | - | - | - | 3Pins | - | - | 150°C | - | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BZV55-C4V3
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SC11215 |
Zener Single Diode, 4.3 V, 500 mW, SOD-80C, 2 Pins, 200 °C, Surface Mount NXP The BZV55 series low-power voltage regulator Zener Diode designed in a small hermetically sealed glass SOD80C surface-mounted device (SMD) package. It is suitable for general regulation functions. • ≤40W Non-repetitive peak reverse power dissipation • 2.4 ...
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- | - | - | SOD-80C | 2Pins | - | - | 200°C | Surface Mount | BZV55 | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC807-16
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SC06596 |
Transistor, PNP SOT23 NXP The BC807 series 500mA PNP General Purpose Transistor suitable for use with general purpose switching and amplification. • High current • Low voltage • BC817 NPN complement
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- | - | - | - | 3Pins | - | - | 150°C | - | BC807 | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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ZVP2106A
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SC06973 |
Power MOSFET, P Channel, 60 V, 280 mA, 4 ohm, TO-226AA, Through Hole DIODES INC. The ZVP2106A is a P-channel enhancement mode MOSFET Transistor with -4A pulsed drain current. • ±20V Gate Source Voltage
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5+ €0.9877 (€1.21) 25+ €0.8211 (€1.01) 100+ €0.7021 (€0.86) |
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- | - | - | - | 3Pins | - | - | 150°C | - | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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VS-GBPC2510A
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SC07521 |
Bridge Rectifier, Single Phase, 1 kV, 25 A, Module, 4 Pins, 1.1 V VISHAY The VS-GBPC2510A is a 4-pin single-phase compact Power Bridge Rectifier Diode offers efficient and reliable operation. The device is intended for use in general purpose applications. It has nickel-plated standard fast-on terminals solderable using lead (Pb...
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1kV | 25A | - | - | 4Pins | 1.1V | 400A | 150°C | - | VS-GBPC Series | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRLML2502PBF
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SC06987 |
Power MOSFET, N Channel, 20 V, 4.2 A, 0.045 ohm, SOT-23, Surface Mount INFINEON The IRLML2502PBF from International Rectifier is 20V single N channel HEXFET power MOSFET in Micro3 (SOT-23) package. This MOSFET features extremely low on resistance per silicon area, ruggedness, fast switching as a result, power MOSFET are well know to p...
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FQP3N80C
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SC11099 |
Power MOSFET, N Channel, 800 V, 3 A, 4 ohm, TO-220, Through Hole ONSEMI The FQP3N80C is a 800V N-channel QFET® enhancement mode Power MOSFET is produced using planar stripe and DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance and with...
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- | - | - | - | 3Pins | - | - | 150°C | - | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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GBU802
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SC09291 |
Bridge Rectifier, Glass Passivated, Single Phase, 100 V, 8 A, SIP, 4 Pins, 1 V TAIWAN SEMICONDUCTOR The GBU802 is a 4-pin single-phase glass passivated Standard Bridge Rectifier Diode with moulded plastic body case. It has terminals leads solderable per MIL-STD- 750, Method 2026 and high temperature soldering guaranteed 250°C/10 seconds/0.375-inch lead l...
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100V | 8A | - | - | 4Pins | 1V | 200A | 150°C | - | GBU80x Series | - |