Semiconductors - Discretes

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Repetitive Peak Reverse Voltage Average Forward Current Diode Configuration Diode Case Style No. of Pins Forward Voltage Max Forward Surge Current Operating Temperature Max Diode Mounting Product Range Qualification
 
 
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STPS3L60U
STPS3L60U - Schottky Rectifier, 60 V, 3 A, Single, DO-214AA (SMB), 2 Pins, 620 mV

SC11436

Schottky Rectifier, 60 V, 3 A, Single, DO-214AA (SMB), 2 Pins, 620 mV

STMICROELECTRONICS

The STPS3L60U is an axial-leaded surface mount power Schottky Rectifier features negligible switching losses and avalanche capability specified. It is suitable for low voltage, high frequency inverter and small battery chargers and high frequency DC-to-DC ...

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60V 3A Single DO-214AA (SMB) 2Pins 620mV 100A 150°C Surface Mount - -
BD680
BD680 - Darlington Transistor, TO126

SC06882

Darlington Transistor, TO126

STMICROELECTRONICS

The BD680 is a PNP complementary power Darlington Transistor manufactured in Planar Base Island technology. It offers monolithic Darlington configuration with integrated anti-parallel collector-emitter diode. • Good hFE linearity • High fT frequency

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- - - - 3Pins - - 150°C - - -
IRLZ34NPBF
IRLZ34NPBF - Power MOSFET, N Channel, 55 V, 27 A, 0.035 ohm, TO-220AB, Through Hole

SC11125

Power MOSFET, N Channel, 55 V, 27 A, 0.035 ohm, TO-220AB, Through Hole

INFINEON

The IRLZ34NPBF is a N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known ...

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- - - - 3Pins - - 175°C - - -
GBU402
GBU402 - Bridge Rectifier, Glass Passivated, Single Phase, 100 V, 4 A, SIP, 4 Pins, 1 V

SC09276

Bridge Rectifier, Glass Passivated, Single Phase, 100 V, 4 A, SIP, 4 Pins, 1 V

TAIWAN SEMICONDUCTOR

The GBU402 is a 4-pin single-phase glass passivated Standard Bridge Rectifier Diode with moulded plastic body case. It has terminals leads solderable per MIL-STD- 750, Method 2026 and high temperature soldering guaranteed 250°C/10 seconds/0.375-inch lead l...

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100V 4A - - 4Pins 1V 150A 150°C - GBU40x Series -
GSIB1520-E3/45
GSIB1520-E3/45 - Bridge Rectifier, Single Phase, 200 V, 15 A, SIP, 4 Pins, 950 mV

SC11487

Bridge Rectifier, Single Phase, 200 V, 15 A, SIP, 4 Pins, 950 mV

VISHAY

The GSIB1520-E3/45 is a 4-pin single-phase in-line Bridge Rectifier Diode with high surge current capability. It is used in general purpose AC/DC bridge full wave rectification for home appliances and office equipment applications. • UL94V-0 Flammability r...

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200V 15A - - 4Pins 950mV 240A 150°C - - -
D44H8G
D44H8G - Transistor, NPN, TO220

SC06751

Transistor, NPN, TO220

ONSEMI

The D44H8G is a 10A NPN bipolar Power Transistor offers low collector-emitter saturation voltage. It can be used as general purpose power amplification and switching such as output or driver stages in applications such as switching regulators, converters a...

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- - - - 3Pins - - 150°C - - -
1N5365BG
1N5365BG - Zener Single Diode, 36 V, 5 W, 017AA, 2 Pins, 200 °C, Through Hole

SC07191

Zener Single Diode, 36 V, 5 W, 017AA, 2 Pins, 200 °C, Through Hole

ONSEMI

The 1N5333B series Surmetic™ Voltage Regulator Zener Diode with tight limits and better operating characteristics that reflect the superior capabilities of silicon-oxide passivated junctions. All this in an axial lead, transfer-moulded plastic package that...

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- - - 017AA 2Pins - - 200°C Through Hole 1N53 Series -
BZV55-C3V3
BZV55-C3V3 - Zener Single Diode, 3.3 V, 500 mW, SOD-80C, 2 Pins, 200 °C, Surface Mount

SC11209

Zener Single Diode, 3.3 V, 500 mW, SOD-80C, 2 Pins, 200 °C, Surface Mount

NXP

• Diode Case Style : SOD-80C • No. of Pins : 2Pins • Operating Temperature Max : 200°C • Diode Mounting : Surface Mount • Product Range : BZV55

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- - - SOD-80C 2Pins - - 200°C Surface Mount BZV55 -
ZVN4206A
ZVN4206A - Power MOSFET, N Channel, 60 V, 600 mA, 1.5 ohm, TO-226AA, Through Hole

SC06966

Power MOSFET, N Channel, 60 V, 600 mA, 1.5 ohm, TO-226AA, Through Hole

DIODES INC.

The ZVN4206A is a 60V E-Line N-channel Enhancement Mode Vertical DMOS FET with 1Ω resistance and 700mW power dissipation.

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- - - - 3Pins - - 150°C - - -
BZV85-C6V8
BZV85-C6V8 - Zener Single Diode, 6.8 V, 1 W, DO-41 (DO-204AL), 2 Pins, 200 °C

SC07092

Zener Single Diode, 6.8 V, 1 W, DO-41 (DO-204AL), 2 Pins, 200 °C

NXP

The BZV85 series medium-power voltage regulator Zener Diode designed in a small hermetically sealed leaded SOD66 (DO-41) glass package. It is suitable for general regulation functions. • 1.3W Total power dissipation (maximum) • ±5% Tolerance series (approx...

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- - - DO-41 (DO-204AL) 2Pins - - 200°C - BZV85 -
SK14B
SK14B - Schottky Rectifier, Miniature, 40 V, 1 A, Single, DO-214AA (SMB), 2 Pins, 500 mV

SC11413

Schottky Rectifier, Miniature, 40 V, 1 A, Single, DO-214AA (SMB), 2 Pins, 500 mV

TAIWAN SEMICONDUCTOR

The SK14B is a surface-mount Schottky Barrier Rectifier with moulded plastic case and solder-plated terminals. • Polarity is indicated by cathode band • Metal to silicon rectifier, majority carrier conduction • Low-forward-voltage drop • Easy pick and plac...

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40V 1A Single DO-214AA (SMB) 2Pins 500mV 30A 125°C Surface Mount SK -
BC635
BC635 - Transistor, NPN, TO92

SC06696

Transistor, NPN, TO92

MULTICOMP PRO

The BC635 is a NPN silicon planar epitaxial medium power Bipolar Transistor with high performance, low frequency devices typically with current ratings 1A up to 1W power dissipation. • Driver stages of audio amplifier application • 45°C/W Junction-to-case ...

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- - - - 3Pins - - 150°C - - -
IRF610PBF
IRF610PBF - Power MOSFET, N Channel, 200 V, 3.3 A, 1.5 ohm, TO-220AB, Through Hole

SC11106

Power MOSFET, N Channel, 200 V, 3.3 A, 1.5 ohm, TO-220AB, Through Hole

VISHAY

The IRF610PBF is a 200V N-channel Power MOSFET, third generation power MOSFET provides the designer with the best combination of fast switching, ruggedized device design and low on-resistance. The package is universally preferred for all commercial-industr...

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- - - - 3Pins - - 150°C - - -
BAT17
BAT17 - Small Signal Schottky Diode, Single, 4 V, 30 mA, 350 mV, 150 °C

SC11310

Small Signal Schottky Diode, Single, 4 V, 30 mA, 350 mV, 150 °C

NXP

The BAT17 is a planar Schottky Barrier Diode encapsulated in a SOT223 plastic SMD package. It is used for low UHF mixers, sampling circuits, modulators and phase detection. • Low forward voltage • Low capacitance • AEC-Q101 qualified

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4V 30mA Single SOT-23 3Pins 350mV - 150°C Surface Mount BAT17 -
GBU405
GBU405 - Bridge Rectifier, Glass Passivated, Single Phase, 600 V, 4 A, SIP, 4 Pins, 1 V

SC09278

Bridge Rectifier, Glass Passivated, Single Phase, 600 V, 4 A, SIP, 4 Pins, 1 V

TAIWAN SEMICONDUCTOR

The GBU405 from Taiwan Semiconductor is single phase, through hole glass passivated bridge rectifier in GBU package. It has high case dielectric strength of 1500VRMS. • IEC 61249-2-21, UL recognized file E326243 • Ideal for printed circuit board • High sur...

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600V 4A - - 4Pins 1V 150A 150°C - GBU40x Series -
BTA16-800BRG
BTA16-800BRG - Triac, 16A, 800V, TO220AB

SC07587

Triac, 16A, 800V, TO220AB

STMICROELECTRONICS

The BTA16-800BRG is a 3-pin Standard Insulated TRIAC for general purpose AC switching and can be used as ON/OFF function. The BTA series TRIAC provides voltage insulated tab by using an internal ceramic pad. • High commutation performance • Low thermal res...

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- - - - 3Pins - - 125°C - - -
IRF840APBF
IRF840APBF - Power MOSFET, N Channel, 500 V, 8 A, 0.85 ohm, TO-220AB, Through Hole

SC11081

Power MOSFET, N Channel, 500 V, 8 A, 0.85 ohm, TO-220AB, Through Hole

VISHAY

The IRF840APBF is a N-channel Power MOSFET with low gate charge and improved gate, avalanche and dynamic dv/dt ruggedness. • Fully characterized capacitance and avalanche voltage and current • Effective Coss specified • ±30V Gate-source voltage

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- - - - 3Pins - - 150°C - - -
SPA11N80C3
SPA11N80C3 - Power MOSFET, N Channel, 800 V, 11 A, 0.39 ohm, TO-220FP, Through Hole

SC11117

Power MOSFET, N Channel, 800 V, 11 A, 0.39 ohm, TO-220FP, Through Hole

INFINEON

The SPA11N80C3 is a 800V N-channel CoolMOS™ Power MOSFET with low specific on-state resistance. The CoolMOS™ MOSFET offers a significant reduction of conduction, switching and driving losses and enable high power density and efficiency for superior power c...

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- - - - 3Pins - - 150°C - - -
BZV55-C4V3
BZV55-C4V3 - Zener Single Diode, 4.3 V, 500 mW, SOD-80C, 2 Pins, 200 °C, Surface Mount

SC11215

Zener Single Diode, 4.3 V, 500 mW, SOD-80C, 2 Pins, 200 °C, Surface Mount

NXP

The BZV55 series low-power voltage regulator Zener Diode designed in a small hermetically sealed glass SOD80C surface-mounted device (SMD) package. It is suitable for general regulation functions. • ≤40W Non-repetitive peak reverse power dissipation • 2.4 ...

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- - - SOD-80C 2Pins - - 200°C Surface Mount BZV55 -
BC807-16
BC807-16 - Transistor, PNP SOT23

SC06596

Transistor, PNP SOT23

NXP

The BC807 series 500mA PNP General Purpose Transistor suitable for use with general purpose switching and amplification. • High current • Low voltage • BC817 NPN complement

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- - - - 3Pins - - 150°C - BC807 -
ZVP2106A
ZVP2106A - Power MOSFET, P Channel, 60 V, 280 mA, 4 ohm, TO-226AA, Through Hole

SC06973

Power MOSFET, P Channel, 60 V, 280 mA, 4 ohm, TO-226AA, Through Hole

DIODES INC.

The ZVP2106A is a P-channel enhancement mode MOSFET Transistor with -4A pulsed drain current. • ±20V Gate Source Voltage

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- - - - 3Pins - - 150°C - - -
VS-GBPC2510A
VS-GBPC2510A - Bridge Rectifier, Single Phase, 1 kV, 25 A, Module, 4 Pins, 1.1 V

SC07521

Bridge Rectifier, Single Phase, 1 kV, 25 A, Module, 4 Pins, 1.1 V

VISHAY

The VS-GBPC2510A is a 4-pin single-phase compact Power Bridge Rectifier Diode offers efficient and reliable operation. The device is intended for use in general purpose applications. It has nickel-plated standard fast-on terminals solderable using lead (Pb...

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1kV 25A - - 4Pins 1.1V 400A 150°C - VS-GBPC Series -
IRLML2502PBF
IRLML2502PBF - Power MOSFET, N Channel, 20 V, 4.2 A, 0.045 ohm, SOT-23, Surface Mount

SC06987

Power MOSFET, N Channel, 20 V, 4.2 A, 0.045 ohm, SOT-23, Surface Mount

INFINEON

The IRLML2502PBF from International Rectifier is 20V single N channel HEXFET power MOSFET in Micro3 (SOT-23) package. This MOSFET features extremely low on resistance per silicon area, ruggedness, fast switching as a result, power MOSFET are well know to p...

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- - - - 3Pins - - 150°C - - -
FQP3N80C
FQP3N80C - Power MOSFET, N Channel, 800 V, 3 A, 4 ohm, TO-220, Through Hole

SC11099

Power MOSFET, N Channel, 800 V, 3 A, 4 ohm, TO-220, Through Hole

ONSEMI

The FQP3N80C is a 800V N-channel QFET® enhancement mode Power MOSFET is produced using planar stripe and DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance and with...

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- - - - 3Pins - - 150°C - - -
GBU802
GBU802 - Bridge Rectifier, Glass Passivated, Single Phase, 100 V, 8 A, SIP, 4 Pins, 1 V

SC09291

Bridge Rectifier, Glass Passivated, Single Phase, 100 V, 8 A, SIP, 4 Pins, 1 V

TAIWAN SEMICONDUCTOR

The GBU802 is a 4-pin single-phase glass passivated Standard Bridge Rectifier Diode with moulded plastic body case. It has terminals leads solderable per MIL-STD- 750, Method 2026 and high temperature soldering guaranteed 250°C/10 seconds/0.375-inch lead l...

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100V 8A - - 4Pins 1V 200A 150°C - GBU80x Series -