Semiconductors - Discretes

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  Manufacturer Part No Order Code Description / Manufacturer
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Channel Type Drain Source Voltage Vds Continuous Drain Current Id Drain Source On State Resistance Transistor Case Style Transistor Mounting Rds(on) Test Voltage Gate Source Threshold Voltage Max Power Dissipation No. of Pins Operating Temperature Max Product Range Qualification
 
 
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IRF630.
IRF630. - Power MOSFET, N Channel, 200 V, 10 A, 0.4 ohm, TO-220, Through Hole

SCIRF630

Power MOSFET, N Channel, 200 V, 10 A, 0.4 ohm, TO-220, Through Hole

STMICROELECTRONICS

• Channel Type : N Channel • Drain Source Voltage Vds : 200V • Continuous Drain Current Id : 10A • Drain Source On State Resistance : 0.4ohm • Transistor Case Style : TO-220 • Transistor Mounting : Through Hole • Rds(on) Test Voltage : 10V • Gate Source Threshold Voltage Max : 3V • Power Dissipation : 100W • No. of Pins : 3Pins • Operating Temperature Max : 150°C

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N Channel 200V 10A 0.4ohm TO-220 Through Hole 10V 3V 100W 3Pins 150°C - -
ZTX603
ZTX603 - Darlington Transistor, E-Line

SC10995

Darlington Transistor, E-Line

DIODES INC.

The ZTX603 is a 80V E-Line Silicon NPN Planar Medium Power Darlington Transistor with silicone encapsulate that is rated to a much higher temperature than the common epoxies. It feature allows higher temperature operation, higher power rating and much high...

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- - - - - Through Hole - - - 3Pins 200°C - -
FDN357N
FDN357N - Power MOSFET, N Channel, 30 V, 2.5 A, 0.053 ohm, SOT-23, Surface Mount

SC11040

Power MOSFET, N Channel, 30 V, 2.5 A, 0.053 ohm, SOT-23, Surface Mount

ONSEMI

The FDN357N is a SuperSOT™-3 N-channel logic level enhancement-mode Power FET produced using high cell density DMOS technology. This very high density process is especially tailored to minimize ON-state resistance. It is particularly suited for low voltage...

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N Channel 30V 2.5A 0.053ohm - Surface Mount 4.5V 1.6V 500mW 3Pins 150°C - -
NDT3055L
NDT3055L - Power MOSFET, N Channel, 60 V, 4 A, 0.07 ohm, SOT-223, Surface Mount

SC11043

Power MOSFET, N Channel, 60 V, 4 A, 0.07 ohm, SOT-223, Surface Mount

ONSEMI

The NDT3055L is a N-channel logic level enhancement mould MOSFET using high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance and withstand hig...

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N Channel 60V 4A 0.07ohm - Surface Mount 10V 1.6V 3W 4Pins 150°C - -
VS-2KBB10R
VS-2KBB10R - Bridge Rectifier, Single Phase, 100 V, 1.9 A, 4 Pins, 1.1 V

SC07480

Bridge Rectifier, Single Phase, 100 V, 1.9 A, 4 Pins, 1.1 V

VISHAY

The VS-2KBB10R is a 4-pin single-phase Bridge Rectifier Diode assembly consisting of four silicon diodes in a plastic encapsulation, intended for general applications. • Suitable for printed circuit board mounting • Leads on standard 2.54mm grid • Compact ...

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- - - - - - - - - 4Pins 150°C VS-2KBB Series -
1N5373BG
1N5373BG - Zener Single Diode, 68 V, 5 W, 017AA, 2 Pins, 200 °C, Through Hole

SC07199

Zener Single Diode, 68 V, 5 W, 017AA, 2 Pins, 200 °C, Through Hole

ONSEMI

The 1N5373BG is a Surmetic™ 40 Voltage Regulator Zener Diode with tight limits and better operating characteristics that reflect the superior capabilities of silicon-oxide passivated junctions. All this in an axial lead, transfer-moulded plastic package th...

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- - - - - - - - 5W 2Pins 200°C 1N53 Series -
BZX79-C47.
BZX79-C47. - Zener Single Diode, 47 V, 500 mW, DO-35, 2 Pins, 200 °C

SC05716

Zener Single Diode, 47 V, 500 mW, DO-35, 2 Pins, 200 °C

NXP

• Power Dissipation : 500mW • No. of Pins : 2Pins • Operating Temperature Max : 200°C • Product Range : BZX79

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- - - - - - - - 500mW 2Pins 200°C BZX79 -
TIP29A
TIP29A - Transistor, NPN, TO220

SC06753

Transistor, NPN, TO220

MULTICOMP PRO

The TIP29A is a NPN high power Bipolar Transistor offers 0.7V (maximum) collector-emitter saturation voltage at 1A and 3MHz minimum current gain-bandwidth product at 200mA. • -65 to 150°C Operating junction temperature range • Multicomp Pro products are ra...

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- - - - TO-220 Through Hole - - 30W 3Pins 150°C - -
MBR745G
MBR745G - Schottky Rectifier, 45 V, 7.5 A, Single, TO-220AC, 2 Pins, 840 mV

SC07401

Schottky Rectifier, 45 V, 7.5 A, Single, TO-220AC, 2 Pins, 840 mV

ONSEMI

The MBR745G is a SWITCHMODE™ Schottky Barrier Power Rectifier with moulded epoxy case. • All external surfaces corrosion-resistant • Low forward voltage • Low power loss/high efficiency • High surge capacity • UL94V-0 Flammability rating

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- - - - - - - - - 2Pins 175°C - -
BTA06-600TRG
BTA06-600TRG - Triac, 6A, 600V, TO220AB

SC07578

Triac, 6A, 600V, TO220AB

STMICROELECTRONICS

The BTA06-600TRG is a 6A insulated Logic-level TRIAC suitable for general purpose AC switching. The logic level versions are specially recommended for use on inductive loads. It can be used as an ON/OFF function in various applications.

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- - - - - - - - - 3Pins 125°C - -
BTA26-600BRG
BTA26-600BRG - Triac, 25A, 600V, TOP-3

SC07590

Triac, 25A, 600V, TOP-3

STMICROELECTRONICS

The BTA26-600BRG is a 3-pin Standard Insulated TRIAC for general purpose AC switching and can be used as ON/OFF function. The BTA series TRIAC provides voltage insulated tab by using an internal ceramic pad. • High commutation performance • Low thermal res...

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- - - - - - - - - 3Pins 125°C - -
IRL510PBF
IRL510PBF - Power MOSFET, N Channel, 100 V, 5.6 A, 0.54 ohm, TO-220AB, Through Hole

SC11134

Power MOSFET, N Channel, 100 V, 5.6 A, 0.54 ohm, TO-220AB, Through Hole

VISHAY

Third generation power MOSFET provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. • Dynamic dV/dot rating • Repetitive avalanche rated • Logic-level gate drive • 175°C operat...

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N Channel 100V 5.6A 0.54ohm TO-220AB Through Hole 5V 2V 43W 3Pins 175°C - -
IRF9640PBF
IRF9640PBF - Power MOSFET, P Channel, 200 V, 11 A, 0.5 ohm, TO-220AB, Through Hole

SC08142

Power MOSFET, P Channel, 200 V, 11 A, 0.5 ohm, TO-220AB, Through Hole

VISHAY

The IRF9640PBF is a -200V P-channel Power MOSFET, third generation HEXFET® power MOSFET provides the designer with the best combination of fast switching, ruggedized device design and low on-resistance. The package is universally preferred for all commerci...

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P Channel 200V 11A 0.5ohm TO-220AB Through Hole 10V 4V 125W 3Pins 150°C - -
BAS16LT1G
BAS16LT1G - Small Signal Diode, Single, 75 V, 200 mA, 1.25 V, 6 ns, 500 mA

SC11275

Small Signal Diode, Single, 75 V, 200 mA, 1.25 V, 6 ns, 500 mA

ONSEMI

The BAS16LT1G is a 3-pin 75V small signal Switching Diode designed for high speed switching applications. It is suitable for use with the automated insertion.

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- - - - - - - - - 3Pins 150°C BAS16L Series AEC-Q101
BC237B
BC237B - Transistor, NPN, TO92

SC09155

Transistor, NPN, TO92

MULTICOMP PRO

The BC237B is a NPN silicon planar Epitaxial Transistor, best suited for use in driver stages of audio amplifiers, low noise input stages of tape recorders, Hi-Fi amplifiers, signal processing circuits of television receivers. • 375°C/W Junction to Ambient...

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- - - - TO-92 Through Hole - - 350mW 3Pins 150°C - -
MPSA92
MPSA92 - Transistor, PNP, TO92

SC09160

Transistor, PNP, TO92

MULTICOMP PRO

The MPSA92 is a low power Bipolar Transistor with breakdown voltage of 160V minimum for applications requiring relatively low collector current such as lamp drivers and neon tubes. Designed for general purpose applications requiring high breakdown voltages...

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- - - - TO-92 Through Hole - - 625mW 3Pins 150°C Multicomp Pto Transistors Bipolar PNP -
STTH12R06D
STTH12R06D - Fast / Ultrafast Diode, 600 V, 30 A, Single, 2.9 V, 45 ns, 100 A

SC11396

Fast / Ultrafast Diode, 600 V, 30 A, Single, 2.9 V, 45 ns, 100 A

STMICROELECTRONICS

The STTH12R06D is a Turbo 2 ultrafast High Voltage Rectifier features low reverse recovery current, low thermal resistance and reduces switching losses. It uses ST Turbo 2 600V technology and is specially suited as a boost diode in continuous mode power fa...

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- - - - - - - - - - 175°C - -
2N2905
2N2905 - Transistor, PNP, TO39

SC06701

Transistor, PNP, TO39

MULTICOMP PRO

The 2N2905 from Multicomp Pro is a through hole, silicon planar PNP low power bipolar transistors in TO-39 metal can package. This are general purpose transistor suitable for switching applications. • Collector emitter voltage (Vce) of -40V • Continuous co...

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- - - - TO-39 Through Hole - - 3W 3Pins 200°C Multicomp Pro Switching PNP Transistor -
2N2907
2N2907 - Transistor, PNP, TO18

SC06704

Transistor, PNP, TO18

MULTICOMP PRO

The 2N2907 from Multicomp Pro is a through hole, PNP transistors in TO-18 metal can package. This transistor is suitable for switching and amplification. • Collector emitter voltage (Vce) of -40V • Continuous collector current (Ic) of -600mA • Power dissip...

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- - - - TO-18 Through Hole - - 1.8W 3Pins 200°C - -
BD911
BD911 - Transistor, NPN, TO220

SC06747

Transistor, NPN, TO220

STMICROELECTRONICS

The BD911 from STMicroelectronics is a through hole NPN complementary power transistors in TO-220 package. This device manufactured in epitaxial planar technology. • Collector to emitter voltage (Vce) is 100V • Collector current (Ic) is 15A • Power dissipa...

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- - - - TO-220AB Through Hole - - 90W 3Pins 150°C - -
GI752-E3/54
GI752-E3/54 - Standard Recovery Diode, 200 V, 6 A, Single, 900 mV, 2.5 µs, 400 A

SC07355

Standard Recovery Diode, 200 V, 6 A, Single, 900 mV, 2.5 µs, 400 A

VISHAY

The GI752-E3/54 is a high current Axial Plastic Rectifier with void-free moulded epoxy body case and matte tin plated solderable leads. The cathode is denoted by the polarity band. It is suitable for use in general-purpose rectification of power supplies, ...

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- - - - - - - - - 2Pins 150°C - -
BZX79-C4V3.
BZX79-C4V3. - Zener Single Diode, 4.3 V, 500 mW, DO-35, 2 Pins, 200 °C

SC05694

Zener Single Diode, 4.3 V, 500 mW, DO-35, 2 Pins, 200 °C

NXP

• Power Dissipation : 500mW • No. of Pins : 2Pins • Operating Temperature Max : 200°C • Product Range : BZX79

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- - - - - - - - 500mW 2Pins 200°C BZX79 -
DB4
DB4 - DIAC / SIDAC, 35 V, 45 V, 100 µA, DO-35, 2 Pins, DIAC

SC07605

DIAC / SIDAC, 35 V, 45 V, 100 µA, DO-35, 2 Pins, DIAC

STMICROELECTRONICS

The DB4 is a 2-pin DIAC for used in conjunction with TRIACs for simplified gate control circuits or as a starting element in fluorescent lamp ballasts. The DB4 series DIAC functioning as a trigger diode with a fixed voltage reference. • Low break-over-curr...

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- - - - - - - - - 2Pins 125°C - -
1N5357BG
1N5357BG - Zener Single Diode, 20 V, 5 W, 017AA, 2 Pins, 200 °C, Through Hole

SC07184

Zener Single Diode, 20 V, 5 W, 017AA, 2 Pins, 200 °C, Through Hole

ONSEMI

The 1N5333B series Surmetic™ Voltage Regulator Zener Diode with tight limits and better operating characteristics that reflect the superior capabilities of silicon-oxide passivated junctions. All this in an axial lead, transfer-moulded plastic package that...

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- - - - - - - - 5W 2Pins 200°C 1N53 Series -
STP9NK50ZFP
STP9NK50ZFP - Power MOSFET, N Channel, 500 V, 7.2 A, 0.72 ohm, TO-220FP, Through Hole

SC13028

Power MOSFET, N Channel, 500 V, 7.2 A, 0.72 ohm, TO-220FP, Through Hole

STMICROELECTRONICS

The STP9NK50ZFP is a 500V N-channel Zener-protected Power MOSFET developed using SuperMESH™ technology, achieved through optimization of well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care i...

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N Channel 500V 7.2A 0.72ohm TO-220FP Through Hole 10V 3.75V 30W 3Pins 150°C - -