Semiconductors - Discretes

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  Manufacturer Part No Order Code Description / Manufacturer
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Transistor Polarity Collector Emitter Voltage Max Continuous Collector Current Power Dissipation Transistor Case Style Transistor Mounting No. of Pins Transition Frequency DC Current Gain hFE Min Operating Temperature Max Product Range Qualification
 
 
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BC640
BC640 - Transistor, PNP, TO92

SC09157

Transistor, PNP, TO92

MULTICOMP PRO

The BC640 is a PNP silicon planar epitaxial low power Bipolar Transistor for driver stages and audio amplifier applications. • 45°C/W Junction-to-case thermal resistance • 156°C/W Junction-to-ambient in free air thermal resistance • Multicomp Pro products ...

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PNP 80V 1A 800mW TO-92 Through Hole 3Pins 150MHz 100hFE 150°C Multicomp Pro Bipolar Transistors PNP -
IRFP450APBF
IRFP450APBF - Power MOSFET, N Channel, 500 V, 14 A, 0.4 ohm, TO-247AC, Through Hole

SC10645

Power MOSFET, N Channel, 500 V, 14 A, 0.4 ohm, TO-247AC, Through Hole

VISHAY

The IRFP450APBF is a 500V N-channel Power MOSFET with low gate charge Qg results in simple drive requirement. It operates at high frequency with hard switching application. Suitable for SMPS and high speed power switching. • Improved gate, avalanche and dy...

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- - - 190W TO-247AC Through Hole 3Pins - - 150°C - -
MUR1100ERLG
MUR1100ERLG - Standard Recovery Diode, 1 kV, 1 A, Single, 1.75 V, 100 ns, 35 A

SC11386

Standard Recovery Diode, 1 kV, 1 A, Single, 1.75 V, 100 ns, 35 A

ONSEMI

The MUR1100ERLG is a Switch Mode plastic Power Rectifier with moulded epoxy case. It has solderable axial leads. It is designed for use in switching power supplies, inverters and as freewheeling diodes. This Ultrafast E series rectifier comes with high rev...

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- - - - - - 2Pins - - 175°C - -
BC849C
BC849C - Transistor, NPN SOT23

SC06588

Transistor, NPN SOT23

NXP

• Transistor Polarity : NPN • Collector Emitter Voltage Max : 30V • Continuous Collector Current : 100mA • Power Dissipation : 250mW • Transistor Case Style : SOT-23 • Transistor Mounting : Surface Mount • No. of Pins : 3Pins • DC Current Gain hFE Min : 520hFE • Operating Temperature Max : 150°C

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NPN 30V 100mA 250mW SOT-23 Surface Mount 3Pins - 520hFE 150°C - -
BZX79-C22.
BZX79-C22. - Zener Single Diode, 22 V, 500 mW, DO-35, 2 Pins, 200 °C

SC05710

Zener Single Diode, 22 V, 500 mW, DO-35, 2 Pins, 200 °C

NXP

• Power Dissipation : 500mW • No. of Pins : 2Pins • Operating Temperature Max : 200°C • Product Range : BZX79

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- - - 500mW - - 2Pins - - 200°C BZX79 -
GBU406
GBU406 - Bridge Rectifier, Glass Passivated, Single Phase, 800 V, 4 A, SIP, 4 Pins, 1 V

SC09279

Bridge Rectifier, Glass Passivated, Single Phase, 800 V, 4 A, SIP, 4 Pins, 1 V

TAIWAN SEMICONDUCTOR

The GBU406 from Taiwan Semiconductor is single phase, through hole glass passivated bridge rectifier in GBU package. It has high case dielectric strength of 1500VRMS. • IEC 61249-2-21, UL recognized file E326243 • Ideal for printed circuit board • High sur...

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- - - - - - 4Pins - - 150°C GBU40x Series -
STTH1210D
STTH1210D - Fast / Ultrafast Diode, 1 kV, 12 A, Single, 2 V, 90 ns, 80 A

SC11397

Fast / Ultrafast Diode, 1 kV, 12 A, Single, 2 V, 90 ns, 80 A

STMICROELECTRONICS

The STTH1210D is an Ultrafast Recovery High-voltage Diode with epoxy (UL94V-0) case. The high-quality design of this diode has produced a device with low leakage current, regularly reproducible characteristics and intrinsic ruggedness. These characteristic...

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- - - - - - - - - 175°C - -
BC847B
BC847B - Transistor, NPN, SOT23

SC06614

Transistor, NPN, SOT23

NXP

• Transistor Polarity : NPN • Collector Emitter Voltage Max : 45V • Continuous Collector Current : 100mA • Power Dissipation : 250mW • Transistor Case Style : SOT-23 • Transistor Mounting : Surface Mount • No. of Pins : 3Pins • DC Current Gain hFE Min : 290hFE • Operating Temperature Max : 150°C

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NPN 45V 100mA 250mW SOT-23 Surface Mount 3Pins - 290hFE 150°C - -
BZV85-C10
BZV85-C10 - Zener Single Diode, 10 V, 1 W, DO-41 (DO-204AL), 2 Pins, 200 °C

SC07096

Zener Single Diode, 10 V, 1 W, DO-41 (DO-204AL), 2 Pins, 200 °C

NXP

The BZV85 series medium-power voltage regulator Zener Diode designed in a small hermetically sealed leaded SOD66 (DO-41) glass package. It is suitable for general regulation functions. • 1.3W Total power dissipation (maximum) • ±5% Tolerance series (approx...

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- - - 1W - - 2Pins - - 200°C BZV85 -
IRF3710PBF
IRF3710PBF - Power MOSFET, N Channel, 100 V, 46 A, 0.023 ohm, TO-220AB, Through Hole

SC11104

Power MOSFET, N Channel, 100 V, 46 A, 0.023 ohm, TO-220AB, Through Hole

INFINEON

The IRF3710PBF is a 100V single N-channel Advanced HEXFET® Power MOSFET utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that ...

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- - - 150W TO-220AB Through Hole 3Pins - - 175°C - -
BZX79-C15.
BZX79-C15. - Zener Single Diode, 15 V, 500 mW, DO-35, 2 Pins, 200 °C

SC05707

Zener Single Diode, 15 V, 500 mW, DO-35, 2 Pins, 200 °C

NXP

• Power Dissipation : 500mW • No. of Pins : 2Pins • Operating Temperature Max : 200°C • Product Range : BZX79

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- - - 500mW - - 2Pins - - 200°C BZX79 -
ZVN0545A
ZVN0545A - Power MOSFET, N Channel, 450 V, 90 mA, 50 ohm, E-Line, Through Hole

SC06961

Power MOSFET, N Channel, 450 V, 90 mA, 50 ohm, E-Line, Through Hole

DIODES INC.

The ZVN0545A is a N-channel enhancement-mode Vertical DMOSFET.

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- - - 700mW E-Line Through Hole 3Pins - - 150°C - -
W04G-E4/51
W04G-E4/51 - Bridge Rectifier, Single Phase, 400 V, 1.5 A, Through Hole, 4 Pins, 1 V

SC08151

Bridge Rectifier, Single Phase, 400 V, 1.5 A, Through Hole, 4 Pins, 1 V

VISHAY

The W04G-E4/51 is a single-phase glass passivated Bridge Rectifier with silver-plated leads and an UL94V-0 flammability-rated molded compound case. It is suitable for printed circuit boards, general purpose use in AC/DC bridge full wave rectification. • Hi...

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- - - - - - 4Pins - - 150°C W04G -
IRFP22N50APBF
IRFP22N50APBF - Power MOSFET, N Channel, 500 V, 22 A, 0.23 ohm, TO-247AC, Through Hole

SC11094

Power MOSFET, N Channel, 500 V, 22 A, 0.23 ohm, TO-247AC, Through Hole

VISHAY

The IRFP22N50APBF is a N-channel enhancement-mode Power MOSFET with low gate charge. • Simple drive requirements • Improved gate, avalanche and dynamic dV/dt ruggedness • Fully characterized capacitance and avalanche voltage and current

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- - - 277W TO-247AC Through Hole 3Pins - - 150°C - -
1N5335BG
1N5335BG - Zener Single Diode, 3.9 V, 5 W, 017AA, 2 Pins, 200 °C, Through Hole

SC07163

Zener Single Diode, 3.9 V, 5 W, 017AA, 2 Pins, 200 °C, Through Hole

ONSEMI

The 1N5333B series Surmetic™ Voltage Regulator Zener Diode with tight limits and better operating characteristics that reflect the superior capabilities of silicon-oxide passivated junctions. All this in an axial lead, transfer-moulded plastic package that...

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- - - 5W - - 2Pins - - 200°C 1N53 Series -
BC108
BC108 - Transistor, NPN, TO18

SC06646

Transistor, NPN, TO18

MULTICOMP PRO

The BC108 from Multicomp Pro are through hole, NPN low power, silicon planar epitaxial transistors in TO-18 metal can package. This device is used for switching and amplification. • Collector emitter voltage (Vce) of 25V • Continuous collector current (Ic)...

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NPN 25V 200mA 750mW TO-18 Through Hole 3Pins 150MHz 110hFE 200°C - -
1N5375BG
1N5375BG - Zener Single Diode, 82 V, 5 W, 017AA, 2 Pins, 200 °C, Through Hole

SC07201

Zener Single Diode, 82 V, 5 W, 017AA, 2 Pins, 200 °C, Through Hole

ONSEMI

The 1N5375BG is a Surmetic™ 40 Voltage Regulator Zener Diode with tight limits and better operating characteristics that reflect the superior capabilities of silicon-oxide passivated junctions. All this in an axial lead, transfer-moulded plastic package th...

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- - - 5W - - 2Pins - - 200°C 1N53 Series -
BZV55-C2V4
BZV55-C2V4 - Zener Single Diode, 2.4 V, 500 mW, SOD-80C, 2 Pins, 200 °C, Surface Mount

SC11212

Zener Single Diode, 2.4 V, 500 mW, SOD-80C, 2 Pins, 200 °C, Surface Mount

NXP

The BZV55 series low-power voltage regulator Zener Diode designed in a small hermetically sealed glass SOD80C surface-mounted device (SMD) package. It is suitable for general regulation functions. • ≤40W Non-repetitive peak reverse power dissipation • 2.4 ...

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- - - 500mW - - 2Pins - - 200°C BZV55 -
IRF5305PBF
IRF5305PBF - Power MOSFET, P Channel, 55 V, 31 A, 0.06 ohm, TO-220AB, Through Hole

SC08218

Power MOSFET, P Channel, 55 V, 31 A, 0.06 ohm, TO-220AB, Through Hole

INFINEON

The IRF5305PBF is -55V single P channel HEXFET power MOSFET in TO-220AB package. This MOSFET features extremely low on resistance per silicon area, dynamic dv/dt rating, rugged, fast switching and fully avalanche rated as a result, power MOSFET are well kn...

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- - - 110W - Through Hole 3Pins - - 175°C - -
BU426A
BU426A - Transistor, NPN, TO218

SC06797

Transistor, NPN, TO218

MULTICOMP PRO

The BU426A is a NPN Fast Switching High Voltage Transistor more specially intended for operating in colour TV supply systems. • Collector-emitter sustaining voltage (Vceo (sus) = 400V minimum) • Low collector-emitter saturation voltage • High voltage power...

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NPN 400V 6A 113W TO-247 Through Hole 3Pins - 8hFE 150°C - -
BD135
BD135 - Transistor, NPN, TO126

SC10992

Transistor, NPN, TO126

STMICROELECTRONICS

The BD135 is a NPN low voltage Transistor built in epitaxial planar technology. Designed for audio amplifiers and drivers utilizing complementary or quasi-complementary circuits. • Complement to BD136 • 0.5A Base current • 10°C/W Junction-to-case thermal r...

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NPN 45V 1.5A 1.25W TO-126 Through Hole 3Pins - 250hFE 150°C - -
NDT2955
NDT2955 - Power MOSFET, P Channel, 60 V, 2.5 A, 0.3 ohm, SOT-223, Surface Mount

SC11042

Power MOSFET, P Channel, 60 V, 2.5 A, 0.3 ohm, SOT-223, Surface Mount

ONSEMI

The NDT2955 is a surface mount, 60V P channel enhancement mode field effect transistors in SOT-223 package. Transistor is produced using high voltage trench process and suitable for power management applications. • High density cell design for extremely lo...

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- - - 3W - Surface Mount 4Pins - - 150°C - -
BZT03C20-TR
BZT03C20-TR - Zener Single Diode, 20 V, 3.25 W, SOD-57, 2 Pins, 175 °C, Through Hole

SC07135

Zener Single Diode, 20 V, 3.25 W, SOD-57, 2 Pins, 175 °C, Through Hole

VISHAY

The BZT03 series Zener Diode with glass passivated junction and hermetically sealed package. It is used in medium power voltage regulators and medium power transient suppression circuits. • Clamping time in picoseconds • UL94V-0 Moulding compound flammabil...

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- - - 3.25W - - 2Pins - - 175°C BZT03 Series AEC-Q101
MBR20200CTG
MBR20200CTG - Schottky Rectifier, 200 V, 20 A, Dual Common Cathode, TO-220AB, 3 Pins, 1 V

SC07395

Schottky Rectifier, 200 V, 20 A, Dual Common Cathode, TO-220AB, 3 Pins, 1 V

ONSEMI

The MBR20200CTG is a Switch‐mode Schottky Barrier Rectifier with UL94V-0 epoxy moulded case and all external surfaces corrosion-resistant and terminal leads are readily solderable finish. The dual power rectifier uses Schottky barrier technology with a pla...

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- - - - - - 3Pins - - 175°C - -
BZT03C22-TR
BZT03C22-TR - Zener Single Diode, 22 V, 3.25 W, SOD-57, 2 Pins, 175 °C, Through Hole

SC07136

Zener Single Diode, 22 V, 3.25 W, SOD-57, 2 Pins, 175 °C, Through Hole

VISHAY

• BZT03 series zener diode with surge current specification in 2 pin SOD-57 package • Glass passivated junction • Hermetically sealed package • Clamping time in picoseconds • Suitable for medium power voltage regulators and medium power transient suppress...

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- - - 3.25W - - 2Pins - - 175°C BZT03 Series AEC-Q101