Bipolar Transistors
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| Manufacturer Part No | Order Code | Description / Manufacturer | Availability | Price For |
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Quantity | Transistor Polarity | Collector Emitter Voltage Max | Continuous Collector Current | Power Dissipation | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC856ALT1G
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SC16053 |
Bipolar (BJT) Single Transistor, PNP, -65 , -100mA, 225mW, SOT-23 ONSEMI The BC856ALT1G is a PNP general purpose Bipolar Transistor designed for use in linear and switching applications. The device is housed in the package which is designed for lower power surface-mount applications. • AEC-Q101 qualified and PPAP capable
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PNP | 65V | 100mA | 225mW | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC846A
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SC16085 |
Bipolar (BJT) Single Transistor, NPN, 65V, 100mA, 300mW, SOT-23, SMD DIODES INC. The BC846A is a NPN small signal Bipolar Transistor ideally suitable for automatic insertion, switching and AF amplifier applications. • UL94V-0 Flammability rating • BC856 - BC858 Complementary PNP types • Halogen-free, Green device • -65 to 150°C Operati...
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NPN | 65V | 100mA | 310mW | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2N3904TA
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SC15823 |
Bipolar (BJT) Single Transistor, NPN, 40V, 200mA, 625mW, TO-92 ONSEMI The 2N3904 is a through hole, NPN general purpose transistor in TO-92 package which is designed for amplifier and switch application. The dynamic range of device extends to 100mA while operating as switch and it will be 100MHz for amplifier. • Collector to...
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NPN | 40V | 200mA | 625mW | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BC807-25,215
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SC16016 |
Bipolar (BJT) Single Transistor, PNP, 45V, -500mA, 250mW, SOT-23, SMD NEXPERIA The BC807-25 is a PNP general purpose Transistor with 3 leads, high current and low voltage, plastic surface mount package. Designed for switching and amplification applications. • 150°C Junction temperature • 5pF Collector capacitance
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PNP | 45V | 500mA | 250mW | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MJD45H11G
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SC16105 |
Bipolar (BJT) Single Transistor, Audio, PNP, 80V, 8A, 20W, TO-252 (DPAK), SMD ONSEMI The MJD45H11G is a 8A PNP bipolar Power Transistor designed for general purpose power and switching output or driver stages in applications such as switching regulators, converters and power amplifiers. • Electrically similar to popular D44H/D45H series • ...
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PNP | 80V | 8A | 20W | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC817-40LT1G
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SC16051 |
Bipolar (BJT) Single Transistor, NPN, 45V, 500mA, 225mW, SOT-23, SMD ONSEMI The BC817-40LT1G is a 45V NPN silicon Bipolar Transistor designed for use in linear and switching applications. The device is suitable for lower power surface mount applications, ESD protection, polarity reversal protection, data line protection, inductive...
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NPN | 45V | 500mA | 225mW | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC857BLT1G
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SC16057 |
Bipolar (BJT) Single Transistor, PNP, -45V, -100mA, 225mW, SOT-23 ONSEMI The BC857BLT1G is a -45V PNP silicon Bipolar Transistor designed for use in linear and switching applications. The device is suitable for lower power surface mount applications. • Halogen-free/BFR-free • -50V Collector to base voltage (VCBO) • -5V Emitter ...
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PNP | 45V | 100mA | 225mW | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC546BTF
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SC15782 |
Bipolar (BJT) Single Transistor, NPN, 65V, 100mA, 500mW, TO-92 ONSEMI The BC546BTF is a NPN epitaxial silicon Bipolar Transistor suitable for switching and amplifier applications. • High voltage VCEO • Complement to BC556
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NPN | 65V | 100mA | 500mW | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BFR106E6327HTSA1
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SC15949 |
Bipolar RF Transistor, NPN, 16V, 5GHz, 700mW, 210mA, SOT-23 INFINEON • Low noise silicon bipolar RF transistor • High linearity low noise RF transistor • 22dBm OP1dB and 31dBm OIP3 at 900MHz, 8V, 70mA • For UHF/VHF applications • Driver for multistage amplifiers • For linear broadband and antenna amplifiers • Collector des...
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NPN | 16V | 210mA | 700mW | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BFR92PE6327HTSA1
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SC16006 |
Bipolar - RF Transistor, NPN, 15V, 5GHz, 280mW, 45mA, SOT-23 INFINEON The BFR 92P E6327 is a NPN Silicon RF Transistor for broadband amplifiers up to 2GHz and fast non-saturated switches at collector currents from 0.5 to 20mA. • Complementary type - BFT91 (PNP)
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NPN | 15V | 45mA | 280mW | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC846ALT1G
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SC16099 |
Bipolar (BJT) Single Transistor, NPN, 65V, 100mA, 300mW, SOT-23, SMD ONSEMI The BC846ALT1G is a NPN Bipolar Transistor designed for use in linear and switching applications. The device is housed in the package which is designed for lower power surface-mount applications. • Halogen-free • AEC-Q101 qualified and PPAP capable • Moist...
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NPN | 65V | 100mA | 300mW | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC847BPN,115
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SC16127 |
Bipolar Transistor Array, NPN, PNP, 45V, 100mA, 200mW, 200hFE, SC-88 NEXPERIA The BC847BPN from NXP is a surface mount NPN/PNP general purpose transistor in SOT-363 (SC-88) package. This transistor is characterized with low collector capacitance, low collector to emitter saturation voltage and closely matched current gain. It reduce...
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NPN, PNP | - | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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2N6109
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SC15381 |
Bipolar Transistor, PNP, 50V, 7A, TO-220 MULTICOMP PRO The 2N6109 is a -50V Silicon PNP Complementary Plastic Power Transistor designed for use in general purpose amplifier and switching applications. • DC current gain (hfe = 30 to 150 at Ic = 7A) • Collector-emitter sustaining voltage (Vceo (sus) = 50VDC mini...
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PNP | 50V | 7A | 40W | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MJ15003G
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SC15816 |
Bipolar (BJT) Single Transistor, Audio, NPN, 140V, 20A, 250W, TO-3 ONSEMI The MJ15003G is a Power Transistor designed for high power audio, disk head positioners and other linear applications. High safe operating area and high DC current gain. Ideal for low distortion complementary designs. • 140VDC Collector-base voltage • 0.70...
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NPN | 140V | 20A | 250W | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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PBSS8110T,215
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SC16078 |
Bipolar (BJT) Single Transistor, NPN, 100V, 1A, 300mW, SOT-23, SMD NEXPERIA The PBSS8110T is a 1A NPN breakthrough-in small signal (BISS) Transistor housed in a surface-mount plastic package. • Low collector-emitter saturation voltage VCEsat • High collector current capability IC and ICM • Higher efficiency leading to less heat ge...
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NPN | 100V | 1A | 300mW | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC847BDW1T1G
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SC16124 |
Bipolar Transistor Array, NPN, 45V, 100mA, 380mW, 450 hFE, SOT-363 ONSEMI The BC847BDW1T1G is a NPN dual Bipolar Transistor Array designed for general purpose amplifier applications. It is designed for low power surface-mount applications. • Halogen-free • -55 to 150°C Junction temperature range
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Dual NPN | - | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC556BTA
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SC15787 |
Bipolar (BJT) Single Transistor, PNP, -65V, -100mA, 500mW, TO-92 ONSEMI The BC556BTA is a PNP epitaxial silicon Bipolar Transistor suitable for switching and amplifier applications. • High voltage VCEO • Complement to BC546
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PNP | 65V | 100mA | 500mW | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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PMBT3904,215
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SC16113 |
Bipolar (BJT) Single Transistor, Switching, NPN, 40V, 200mA, 250mW, TO-236AB, SMD NEXPERIA The PMBT3904,215 is a NPN Switching Transistor housed in a surface-mount plastic package. • PNP complement is PMBT3906 • 1A Marking code
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NPN | 40V | 200mA | 250mW | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC550CTA
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SC15786 |
Bipolar (BJT) Single Transistor, NPN, 45V, 100mA, 500mW, TO-92 ONSEMI The BC550CTA is a NPN epitaxial silicon Bipolar Transistor suitable for switching and amplifier applications. • Low noise • Complement to BC560
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NPN | 45V | 100mA | 500mW | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC846,215
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SC16015 |
Bipolar (BJT) Single Transistor, NPN, 45V, 500mA, 250mW, SOT-23, SMD NEXPERIA The BC846,215 is a NPN general purpose Transistor in SMD plastic package. • Two Different Gain Selections
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NPN | 65V | 100mA | 250mW | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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PN2222ABU
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SC15797 |
Bipolar (BJT) Single Transistor, NPN, 40V, 1A, 625mW, TO-226AA ONSEMI The PN2222ABU is a 40V NPN Bipolar (BJT) Single Transistor for use as a medium power amplifier and switch requiring collector currents up to 500mA. This product is general usage and suitable for many different applications. • 75V Collector to base voltage ...
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NPN | 40V | 1A | 625mW | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MMBT5401LT1G
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SC16070 |
Bipolar (BJT) Single Transistor, PNP, -150V, -500mA, 225mW, SOT-23 ONSEMI The MMBT5401LT1G is a PNP high voltage Bipolar Transistor designed for general purpose switching applications. The device is housed in the package which is designed for lower power surface-mount applications. • Halogen-free • AEC-Q101 qualified and PPAP ca...
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PNP | 150V | 500mA | 225mW | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC846S,115
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SC16128 |
Bipolar Transistor Array, NPN, 65V, 100mA, 200mW, 110hFE, SOT-363 NEXPERIA The BC846S is a dual NPN General Purpose Transistor in a plastic package. It is suitable for use with general purpose switching and small signal amplification. • Reduces number of components and board space • No mutual interference between the transistors ...
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Dual NPN | - | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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2N2219A
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SC15752 |
Bipolar (BJT) Single Transistor, NPN, 40V, 300MHz, 400mW, 800mA, 35 hFE MULTICOMP PRO 2N2219A is a NPN silicon transistor for high speed switching applications. • 75V collector-base voltage • 6V emitter-base voltage • 1.2W total device dissipation • Multicomp Pro products are rated 4.6 out of 5 stars • 12 month limited warranty *view Terms ...
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NPN | 40V | 800mA | 3W | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC856BDW1T1G
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SC16138 |
Bipolar Transistor Array, Dual PNP, -65V, -100mA, 380mW, 220hFE, SOT-363 ONSEMI The BC856BDW1T1G is a PNP dual Bipolar Transistor Array designed for general purpose amplifier applications. It is designed for low power surface-mount applications. • Halogen-free • -55 to 150°C Junction temperature range
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Dual PNP | - | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||