Bipolar Transistors
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Manufacturer Part No | Order Code | Description / Manufacturer | Availability | Price For |
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Quantity | Transistor Polarity | Collector Emitter Voltage Max | Continuous Collector Current | Power Dissipation | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MJD44H11G
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SC16077 |
Bipolar (BJT) Single Transistor, Audio, NPN, 80V, 8A, 20W, TO-252 (DPAK), SMD ONSEMI The MJD44H11G is a bipolar Power Transistor, designed for general purpose power and switching output or driver stages in applications such as switching regulators, converters and power amplifiers. • Lead formed for surface mount application in plastic slee...
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NPN | 80V | 8A | 20W | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BCP56-16,115
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SC16109 |
Bipolar (BJT) Single Transistor, NPN, 80V, 1A, 650mW, SOT-223, SMD NEXPERIA The BCP56 series 1A NPN Medium Power Transistor in a very small leadless surface-mount plastic package. • High current • Three current gain selections • High power dissipation capability • Exposed heat-sink for excellent thermal and electrical conductivity...
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NPN | 80V | 1A | 650mW | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BC856B,215
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SC16009 |
Bipolar (BJT) Single Transistor, PNP, -65V, -100mA, 250mW, SOT-23 NEXPERIA The BC856B,215 is a PNP Transistor in SMD plastic package with low current and voltage. Used for general purpose switching and amplification. • Complement to BC847
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PNP | 65V | 100mA | 250mW | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MMBT2222A-7-F
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SC16034 |
Bipolar (BJT) Single Transistor, NPN, 40V, 600mA, 300mW, SOT-23, SMD DIODES INC. MMBT2222A-7-F is a 40V NPN small signal transistor with matte tin-plated terminals. The terminals can solderable as per MIL-STD-202, method 208. The case is made of moulded plastic, "Green" moulding compound (UL94V-0). The transistor is ideal for low-power...
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NPN | 40V | 600mA | 310mW | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MJE3055T
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SC15821 |
Bipolar (BJT) Single Transistor, NPN, 60V, 10A, 75W, TO-220 STMICROELECTRONICS The MJE3055T is a 60V Silicon Epitaxial Base NPN Power Transistor intended for power switching circuits and general purpose amplifiers. Fast switching times and very low saturation voltage resulting in reduced switching and conduction losses. • Complementa...
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NPN | 60V | 10A | 75W | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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TIP32CG
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SC15738 |
Bipolar (BJT) Single Transistor, General Purpose, PNP, 100V, 3A, 40W, TO-220AB ONSEMI The TIP32CG is a bipolar PNP Power Transistor designed for use in general purpose amplifier and switching applications. • Complementary device
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PNP | 100V | 3A | 40W | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MMBT3904LT1G
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SC15980 |
Bipolar (BJT) Single Transistor, General Purpose, NPN, 40V, 200mA, 225mW, SOT-23, SMD ONSEMI MMBT3904LT1G is a NPN silicon, surface mount, general purpose transistor. • Collector-emitter breakdown voltage is 40VDC min (TA = 25°C, IC = 1.0mAdc, IB = 0) • Collector-base breakdown voltage is 60VDC min (IC = 0.1µmAdc, IE = 0, TA = 25°C) • Emitter-base...
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NPN | 40V | 200mA | 225mW | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MUN5211DW1T1G
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SC15948 |
Bipolar Pre-Biased / Digital Transistor, BRT, Dual NPN, 50V, 100mA, 10 kohm, 10 kohm ONSEMI The MUN5211DW1T1G is a dual NPN Bipolar Digital Transistor designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistor...
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Dual NPN | - | 100mA | 385mW | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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PMBTA45,215
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SC16055 |
Bipolar (BJT) Single Transistor, NPN, 500V, 150mA, 300mW, SOT-23, SMD NEXPERIA The PMBTA45 is a 500V NPN low VCEsat Breakthrough In Small Signal (BISS) Transistor with very low collector-emitter saturation voltage and high efficiency due to less heat generation. Suitable for use in electronic ballasts, LED driver for LED chain module...
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NPN | 500V | 150mA | 300mW | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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TTC5200
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SC15763 |
Bipolar (BJT) Single Transistor, NPN, 230V, 15A, 150W, TO-3P TOSHIBA The TTC5200 from Toshiba is a through hole NPN silicon transistor in TO-3P package with high collector voltage. This device is commonly used for power amplification. • Collector to emitter voltage (Vce) is 230V • Collector to base voltage of 230V • Collect...
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NPN | 230V | 15A | 150W | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MMBT2907A-7-F
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SC16060 |
Bipolar (BJT) Single Transistor, PNP, 60V, 600mA, 300mW, SOT-23, SMD DIODES INC. The MMBT2907A-7-F is a PNP small signal Bipolar Transistor offers -600mA collector current and -60V collector-base voltage. It is ideal for low power amplification and switching. • UL94V-0 Flammability rating • Epitaxial planar die construction • MMBT2222A...
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PNP | 60V | 600mA | 310mW | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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2N5416
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SC15811 |
Bipolar (BJT) Single Transistor, PNP, -300V, -1A, 1W, TO-39 MULTICOMP PRO The 2N5416 is a -300V Silicon PNP High Voltage Transistor ideal for high speed switching and linear amplifier appliances in military, industrial and commercial equipment. • Collector-base voltage(Vcbo = 350V) • Emitter-base voltage(Vebo = 6V) • Multicomp P...
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PNP | 300V | 1A | 1W | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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FMMT458
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SC16056 |
Bipolar (BJT) Single Transistor, NPN, 400V, 225mA, 500mW, SOT-23, SMD DIODES INC. FMMT458 is a NPN high voltage transistor in a 3 pin SOT23 package. • BVCEO is greater than 400V • IC = 225mA high continuous collector current • ICM = 1A peak pulse current • 500mW power dissipation • Excellent hFE characteristics up to 100mA • Complementa...
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NPN | 400V | 225mA | 500mW | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC846BLT3G
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SC16046 |
Bipolar (BJT) Single Transistor, NPN, 65V, 100mA, 225mW, SOT-23, SMD ONSEMI • Transistor Polarity : NPN • Collector Emitter Voltage Max : 65V • Continuous Collector Current : 100mA • Power Dissipation : 225mW
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NPN | 65V | 100mA | 225mW | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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PDTD123YT,215
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SC15947 |
Bipolar Pre-Biased / Digital Transistor, BRT, Single NPN, 50V, 500mA, 2.2 kohm, 10 kohm NEXPERIA The PDTD123YT is a 2.2 to 10kΩ NPN Resistor Equipped Transistor (RET) in a surface-mount plastic package. • Built-in bias resistors • Reduces component count • Simplifies circuit design • Reduces pick and place costs • ±10% Resistor ratio tolerance • PNP c...
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Single NPN | - | 500mA | 250mW | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC640TA
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SC15792 |
Bipolar (BJT) Single Transistor, PNP, -80V, -1A, 1W, TO-92 ONSEMI The BC640TA is a PNP Epitaxial Silicon Transistor designed for use in switching and amplifier applications. • Complement to BC639 • -55 to 150°C Operating junction temperature range
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PNP | 80V | 1A | 1W | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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FMMT591A
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SC16064 |
Transistor, PNP, SOT23 DIODES INC. The FMMT591A is a PNP silicon planar medium power Bipolar Transistor offers 350mΩ low equivalent on resistance RCE (sat) at 1A. • FMMT491A Complementary NPN type • -55 to 150°C Operating temperature range
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PNP | 40V | 1A | 500mW | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC850CLT1G
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SC16098 |
Bipolar (BJT) Single Transistor, NPN, 45V, 100mA, 225mW, SOT-23, SMD ONSEMI The BC850CLT1G is a NPN general purpose Bipolar Transistor designed for use in linear and switching applications. The device is housed in the package which is designed for lower power surface-mount applications. • Moisture sensitivity level-1 • AEC-Q101 qu...
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NPN | 45V | 100mA | 225mW | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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KSA992FBU
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SC15794 |
Bipolar (BJT) Single Transistor, PNP, -120V, -50mA, 500mW, TO-226AA ONSEMI The KSA992FBU is a PNP Epitaxial Silicon Transistor offers -120V collector base voltage and -50mA collector current. It is suitable for audio frequency low-noise amplifier applications. • Complement to KSC1845
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PNP | 120V | 50mA | 500mW | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC63916-D27Z
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SC15791 |
Bipolar (BJT) Single Transistor, NPN, 80V, 1A, 830mW, TO-226AA ONSEMI The BC63916_D27Z is a NPN Epitaxial Silicon Transistor designed for use in switching and amplifier applications. • -55 to 150°C Operating junction temperature range
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NPN | 80V | 1A | 830mW | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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FMMT491
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SC16093 |
Bipolar (BJT) Single Transistor, NPN, 60V, 1A, 500mW, SOT-23, SMD DIODES INC. The FMMT491 is a NPN silicon planar medium power Bipolar Transistor offers 210mΩ low equivalent ON-resistance RCE (sat) at 1A. • FMMT591 Complementary type • -55 to 150°C Operating temperature range
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NPN | 60V | 1A | 500mW | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC32725BU
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SC15778 |
Bipolar (BJT) Single Transistor, PNP, -45 V, -800mA, 625mW, TO-92 ONSEMI The BC32725BU is a PNP Epitaxial Silicon Transistor suitable for AF-driver stages, low-power output stages, switching and amplifier applications. • Complement to BC337
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PNP | 45V | 800mA | 625mW | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MMBTH81
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SC16005 |
Bipolar - RF Transistor, PNP, 20V, 600MHz, 225mW, -50mA, SOT-23 ONSEMI The MMBTH81 is a PNP RF Transistor designed for general RF amplifier and mixer applications to 250mHz with collector currents in the 1 to 30mA range. • 20V Collector-emitter voltage • 20V Collector-base voltage • 3V Emitter-base voltage • 50mA Continuous c...
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PNP | 20V | -50mA | 225mW | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC857A,215
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SC16044 |
Bipolar (BJT) Single Transistor, PNP, 45V, 100mA, 250mW, SOT-23, SMD NEXPERIA The BC857 series 100mA PNP General Purpose Transistor suitable for use with general purpose switching and amplification. • 3H Marking code • Surface-mount plastic package
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PNP | 45V | 100mA | 250mW | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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PDTC114ET,215
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SC15942 |
Bipolar Pre-Biased / Digital Transistor, BRT, Single NPN, 50V, 100mA, 10 kohm, 10 kohm NEXPERIA The PDTC114ET,215 is a NPN Resistor-equipped Transistor family in a small surface mounted device plastic package with 3 leads, built-in bias resistors, simplifies circuit design and reduces component count. • 100mA Output current capability • Reduces pick ...
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Single NPN | - | 100mA | 250mW |