Single Bipolar Junction Transistors - BJT
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| Manufacturer Part No | Order Code | Description / Manufacturer | Availability | Price For |
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Quantity | Transistor Polarity | Collector Emitter Voltage V(br)ceo | Collector Emitter Voltage Max | DC Collector Current | Continuous Collector Current | Power Dissipation | Transistor Case Style | Transistor Mounting | No. of Pins | Transition Frequency | DC Current Gain hFE Min | DC Current Gain hFE | Operating Temperature Max | Product Range | Qualification | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC817-40W,115
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SC16024 |
Bipolar (BJT) Single Transistor, NPN, 45V, 500mA, 200mW, SOT-323, SMD NEXPERIA The BC817 series 500mA NPN General Purpose Transistor suitable for use with general purpose switching and amplification. • High current • Low voltage • BC807 PNP complement
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NPN | - | 45V | 500mA | 500mA | 200mW | SOT-323 | Surface Mount | 3Pins | 100MHz | 250hFE | 250hFE | 150°C | BC817 | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BSR16..
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SC16019 |
Bipolar (BJT) Single Transistor, PNP, -60V, -800mA, 350mW, SOT-23, SMD ONSEMI The BSR16 is a PNP Bipolar Transistor designed for use as a general purpose amplifier and switches requiring collector currents up to 500mA. • Sourced from Process 63 • -55 to 150°C Operating junction temperature range
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PNP | 60V | 60V | 800mA | 800mA | 350mW | SOT-23 | Surface Mount | 3Pins | 200MHz | 100hFE | 100hFE | 150°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BU508AW
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SC15766 |
Bipolar (BJT) Single Transistor, NPN, 700V, 8A, 125W, TO-247 STMICROELECTRONICS The BU508AW is a 700V High Voltage NPN Power Transistor for standard definition CRT display. It is manufactured using diffused collector in planar technology adopting new and enhanced high voltage structure for updated performance to the horizontal deflect...
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NPN | - | 700V | - | 8A | 125W | TO-247 | Through Hole | 3Pins | - | 5hFE | - | 150°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BC857C
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SC16091 |
Bipolar (BJT) Single Transistor, PNP, -45V, -100mA, 250mW, SOT-23, SMD MULTICOMP PRO The BC857C is a PNP general purpose Bipolar Transistor suitable for switching and amplification applications. • -65 to 150°C Junction temperature range • Multicomp Pro products are rated 4.6 out of 5 stars • 12 month limited warranty *view Terms & Conditio...
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PNP | 45V | 45V | 100mA | 100mA | 250mW | SOT-23 | Surface Mount | 3Pins | 100MHz | 420hFE | 420hFE | 150°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC856BW
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SC16102 |
Bipolar (BJT) Single Transistor, PNP, -65V, -100mA, 200mW, SOT-323, SMD DIODES INC. The BC856BW is a PNP small signal Bipolar Transistor ideally suitable for automatic insertion, switching and AF amplifier applications. • UL94V-0 Flammability rating • BC846AW - BC848CW Complementary NPN types • Halogen-free, Green device • -65 to 150°C Op...
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PNP | 65V | 65V | 100mA | 100mA | 200mW | SOT-323 | Surface Mount | 3Pins | 200MHz | 220hFE | 290hFE | 150°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC857CLT1G
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SC16076 |
Bipolar (BJT) Single Transistor, PNP, -45V, -100mA, 225mW, SOT-23 ONSEMI The BC857CLT1G is a PNP general purpose Bipolar Transistor is designed for use in linear and switching applications. The device is housed in the package which is designed for lower power surface-mount applications. • AEC-Q101 qualified and PPAP capable
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PNP | 45V | 45V | 100mA | 100mA | 225mW | SOT-23 | Surface Mount | 3Pins | 100MHz | 420hFE | 420hFE | 150°C | BCxxx | AEC-Q101 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC547B
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SC15747 |
Bipolar (BJT) Single Transistor, NPN, 45V, 100mA, 625mW, TO-92 MULTICOMP PRO The BC547B is a NPN Transistor, suitable for use in driver and output stages of audio amplifier, low noise input stages of tape recorders, Hi-Fi amplifiers and signal processing circuits of television receivers. • 250°C/W Junction to Ambient Thermal Resist...
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NPN | - | 45V | - | 100mA | 500mW | TO-92 | Through Hole | 3Pins | 300MHz | 200hFE | - | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC847BW,115
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SC16041 |
Bipolar (BJT) Single Transistor, General Purpose, NPN, 45V, 100mA, 200mW, SOT-323, SMD NEXPERIA The BC847BW,115 is a NPN general-purpose Transistor in surface mounted device (SMD) plastic package with 3 leads. Designed for switching and amplification applications. • Three different gain selections
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NPN | - | 45V | 100mA | 100mA | 200mW | SOT-323 | Surface Mount | 3Pins | 100MHz | 200hFE | 200hFE | 150°C | BC847 | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MMBT3904WT1G
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SC16072 |
Bipolar (BJT) Single Transistor, NPN, 40V, 200mA, 150mW, SOT-323, SMD ONSEMI The MMBT3904WT1G is a NPN Bipolar Transistor designed for general purpose amplifier applications. It is housed in the package which is designed for low power surface-mount applications. • Low RDS (ON) provides higher efficiency and extends battery life • A...
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NPN | - | 40V | 200mA | 200mA | 150mW | SOT-323 | Surface Mount | 3Pins | 300MHz | 300hFE | 300hFE | 150°C | MMBTxxxx | AEC-Q101 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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FMMT458TA
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SC15931 |
Bipolar (BJT) Single Transistor, NPN, 400V, 225mA, 500mW, SOT-23, SMD DIODES INC. • Transistor Polarity : NPN • Collector Emitter Voltage Max : 400V • DC Collector Current : 225mA • Continuous Collector Current : 225mA • Power Dissipation : 500mW • Transistor Case Style : SOT-23 • Transistor Mounting : Surface Mount • No. of Pins : 3Pins • Transition Frequency : 50MHz • DC Current Gain hFE Min : 15hFE • DC Current Gain hFE : 15hFE • Operating Temperature Max : 150°C
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NPN | - | 400V | 225mA | 225mA | 500mW | SOT-23 | Surface Mount | 3Pins | 50MHz | 15hFE | 15hFE | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MMBT5551LT1G
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SC16063 |
Bipolar Single Transistor, BJT, General Purpose, NPN, 160V, 600mA, 225mW, SOT-23, SMD ONSEMI The MMBT5551LT1G is an NPN Silicon High Voltage Transistor designed for requiring unique site and control change requirements. This transistor is PPAP capable and AEC-Q101 qualified. • Halogen-free
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NPN | - | 160V | 600mA | 600mA | 225mW | SOT-23 | Surface Mount | 3Pins | - | 80hFE | 80hFE | 150°C | MMBTxxxx | AEC-Q101 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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KSP2222ABU
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SC15796 |
Bipolar (BJT) Single Transistor, NPN, 40V, 600mA, 625mW, TO-92 ONSEMI The KSP2222ABU is a NPN Bipolar Transistor offers 75V collector base voltage and 600mA collector current. It is suitable for general purpose amplifier applications.
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NPN | - | 40V | - | 600mA | 625mW | TO-92 | Through Hole | 3Pins | 300MHz | 35hFE | - | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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2SC5242OTU
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SC15936 |
Bipolar (BJT) Single Transistor, NPN, 250V, 17A, 130W, TO-3P ONSEMI • Transistor Polarity : NPN • Collector Emitter Voltage Max : 250V • DC Collector Current : 17A • Continuous Collector Current : 17A • Power Dissipation : 130W • Transistor Case Style : TO-3P • Transistor Mounting : Through Hole • No. of Pins : 3Pins • Transition Frequency : 30MHz • DC Current Gain hFE Min : 80hFE • DC Current Gain hFE : 80hFE • Operating Temperature Max : 150°C
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NPN | - | 250V | 17A | 17A | 130W | TO-3P | Through Hole | 3Pins | 30MHz | 80hFE | 80hFE | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BUTW92
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SC15729 |
Bipolar (BJT) Single Transistor, NPN, 250V, 180W, 60A, 9hFE STMICROELECTRONICS The BUTW92 is a 250V High Current NPN Silicon Transistor suited for power conversion applications, high efficiency converters and motor controls. Fast switching times and very low saturation voltage resulting in reduced switching and conduction losses. • H...
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NPN | - | 250V | - | 60A | 180W | TO-247 | Through Hole | 3Pins | - | 9hFE | - | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC848C-7-F
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SC16108 |
Bipolar (BJT) Single Transistor, NPN, 30V, 100mA, 300mW, SOT-23, SMD DIODES INC. The BC848C-7-F is a NPN small signal Bipolar Transistor ideally suitable for automatic insertion, switching and AF amplifier applications. • UL94V-0 Flammability rating • BC856 - BC858 Complementary PNP types • Halogen-free, Green device • -65 to 150°C Ope...
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NPN | - | 30V | 100mA | 100mA | 310mW | SOT-23 | Surface Mount | 3Pins | 300MHz | 600hFE | 600hFE | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC141-16
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SC15378 |
Bipolar Transistor, NPN, 60V, 1A, TO-39 MULTICOMP PRO The BC141-16 from Multicomp Pro are through hole, NPN medium power, silicon planar epitaxial transistors in TO-39 metal can package. This device is used for switching and amplification. • Collector emitter voltage (Vce) of 60V • Continuous collector curren...
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NPN | - | 60V | - | 1A | 800mW | TO-39 | Through Hole | 3Pins | 50MHz | 30hFE | - | 200°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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FJPF5021OTU
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SC15806 |
Bipolar (BJT) Single Transistor, NPN, 500V, 5A, 40W, TO-220F ONSEMI • NPN silicon transistor • High voltage and high reliability • High speed switching • Wide SOA
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NPN | - | 500V | - | 5A | 40W | TO-220F | Through Hole | 3Pins | 15MHz | 20hFE | - | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC848ALT1G
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SC16058 |
Bipolar (BJT) Single Transistor, NPN, 30V, 100mA, 225mW, SOT-23, SMD ONSEMI • Transistor Polarity : NPN • Collector Emitter Voltage Max : 30V • DC Collector Current : 100mA • Continuous Collector Current : 100mA • Power Dissipation : 300mW • Transistor Case Style : SOT-23 • Transistor Mounting : Surface Mount • No. of Pins : 3Pins • Transition Frequency : 100MHz • DC Current Gain hFE Min : 110hFE • DC Current Gain hFE : 110hFE • Operating Temperature Max : 150°C • Product Range : BCxxx • Qualification : AEC-Q101
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NPN | - | 30V | 100mA | 100mA | 300mW | SOT-23 | Surface Mount | 3Pins | 100MHz | 110hFE | 110hFE | 150°C | BCxxx | AEC-Q101 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC856B
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SC16089 |
Bipolar (BJT) Single Transistor, PNP, -65V, -100mA, 250mW, SOT-23, SMD MULTICOMP PRO The BC856B is a PNP general purpose Bipolar Transistor suitable for switching and amplification applications. • -65 to 150°C Junction temperature range • Multicomp Pro products are rated 4.6 out of 5 stars • 12 month limited warranty *view Terms & Conditio...
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PNP | 65V | 65V | 100mA | 100mA | 250mW | SOT-23 | Surface Mount | 3Pins | 100MHz | 220hFE | 220hFE | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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D45H11G
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SC15819 |
Bipolar (BJT) Single Transistor, Audio, PNP, -80V, -10A, 70W, TO-220 ONSEMI The D45H11G is a -80V Silicon PNP Bipolar Complementary Plastic Power Transistor that can be used as general purpose power amplification and switching such as output or driver stages in applications such as switching regulators, converters and power amplif...
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PNP | - | 80V | - | 10A | 70W | TO-220 | Through Hole | 3Pins | 40MHz | 60hFE | - | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MMBT5087LT1G
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SC16088 |
Bipolar (BJT) Single Transistor, PNP, -50V, -50mA, 225mW, SOT-23, SMD ONSEMI The MMBT5087LT1G is a PNP Bipolar Transistor designed for high gain and low noise general purpose amplifier applications. The device is housed in the package which is designed for lower power surface-mount applications. • Low RDS (ON) provides higher effic...
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PNP | 50V | 50V | 50mA | 50mA | 225mW | SOT-23 | Surface Mount | 3Pins | 40MHz | 40hFE | 40hFE | 150°C | MMBTxxxx | AEC-Q101 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC847,215
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SC16017 |
Bipolar (BJT) Single Transistor, NPN, 45V, 100mA, 250mW, SOT-23, SMD NEXPERIA The BC847,215 is a NPN general purpose Transistor in SMD plastic package. • Three Different Gain Selections
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NPN | - | 45V | 100mA | 100mA | 250mW | SOT-23 | Surface Mount | 3Pins | 100MHz | 110hFE | 110hFE | 150°C | BC847 Series | AEC-Q101 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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TIP31CG
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SC15737 |
Bipolar (BJT) Single Transistor, NPN, 100V, 3A, 40W, TO-220 ONSEMI The TIP31CG is a 100V Silicon NPN Bipolar Complementary Plastic Power Transistor designed for use in general purpose amplifier and switching applications. • High current gain bandwidth • Collector-base voltage (Vcbo = 100V) • Emitter-base voltage (Vcbo = 5...
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NPN | - | 100V | - | 3A | 40W | TO-220 | Through Hole | 3Pins | 3MHz | 10hFE | - | 150°C | TIPxxx | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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2N3773G
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SC15818 |
Bipolar (BJT) Single Transistor, NPN, 140V, 16A, 150W, TO-204AA ONSEMI The 2N3773G is a 140V NPN PowerBase™ Bipolar Power Transistor designed for high power audio, disk head positioners and other linear applications. This device can also be used in power switching circuits such as relay or solenoid drivers, DC-DC converters o...
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NPN | - | 140V | - | 16A | 150W | TO-204AA | Through Hole | 2Pins | - | 4hFE | - | 200°C | 2NXXXX | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC557BTA
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SC15808 |
Bipolar (BJT) Single Transistor, PNP, -45V, -100mA, 500mW, TO-92 ONSEMI The BC557BTA is a PNP epitaxial silicon Bipolar Transistor suitable for switching and amplifier applications. • Complement to BC547
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5
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PNP | - | 45V | - | 100mA | 500mW | TO-92 | Through Hole | 3Pins | 150MHz | 200hFE | - | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||