Single Bipolar Junction Transistors - BJT
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| Manufacturer Part No | Order Code | Description / Manufacturer | Availability | Price For |
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Quantity | Transistor Polarity | Collector Emitter Voltage V(br)ceo | Collector Emitter Voltage Max | DC Collector Current | Continuous Collector Current | Power Dissipation | Transistor Case Style | Transistor Mounting | No. of Pins | Transition Frequency | DC Current Gain hFE Min | DC Current Gain hFE | Operating Temperature Max | Product Range | Qualification | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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2N3705
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SC06651 |
Transistor, NPN TO92 CDIL • Transistor Polarity : NPN • Collector Emitter Voltage Max : 30V • Transistor Mounting : Through Hole • No. of Pins : 3Pins
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NPN | - | 30V | - | - | - | - | Through Hole | 3Pins | - | - | - | - | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BD179
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SC09457 |
Transistor, NPN, TO126 CDIL • Transistor Polarity : NPN • Collector Emitter Voltage Max : 80V • Continuous Collector Current : 3A • Power Dissipation : 30W • Transistor Case Style : TO-126 • Transistor Mounting : Through Hole • No. of Pins : 3Pins • DC Current Gain hFE Min : 100hFE
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1+ €0.3332 (€0.41) 10+ €0.2856 (€0.35) |
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NPN | - | 80V | - | 3A | 30W | TO-126 | Through Hole | 3Pins | - | 100hFE | - | - | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BD237
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SC09466 |
Transistor, NPN, TO126 CDIL • Transistor Polarity : NPN • Collector Emitter Voltage Max : 80V • Transistor Case Style : TO-126 • Transistor Mounting : Through Hole • No. of Pins : 3Pins
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1+ €0.3689 (€0.45) 10+ €0.3213 (€0.40) 100+ €0.2261 (€0.28) 500+ €0.1547 (€0.19) |
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NPN | - | 80V | - | - | - | TO-126 | Through Hole | 3Pins | - | - | - | - | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MPSA06
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SC09465 |
Transistor, NPN, TO92 CDIL • Transistor Polarity : NPN • Collector Emitter Voltage Max : 80V • Continuous Collector Current : 500mA • Power Dissipation : 1.5W • Transistor Case Style : TO-92 • Transistor Mounting : Through Hole • No. of Pins : 3Pins • DC Current Gain hFE Min : 100hFE
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NPN | - | 80V | - | 500mA | 1.5W | TO-92 | Through Hole | 3Pins | - | 100hFE | - | - | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC550CBU
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SC15785 |
Bipolar (BJT) Single Transistor, NPN, 45V, 100mA, 500mW, TO-92 ONSEMI The BC550CBU is a NPN epitaxial silicon Bipolar Transistor suitable for switching and amplifier applications. • Low noise • Complement to BC560
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NPN | - | 45V | - | 100mA | 500mW | TO-92 | Through Hole | 3Pins | 300MHz | 420hFE | - | 150°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC547BTA
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SC15765 |
Bipolar (BJT) Single Transistor, NPN, 45V, 100mA, 500mW, TO-92 ONSEMI The BC547BTA is a NPN epitaxial Silicon Transistor features high voltage and low noise. • Complement to BC556, BC557, BC558, BC559 and BC560 • 50V Collector-base voltage • 6V Emitter-base voltage
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NPN | - | 45V | - | 100mA | 500mW | TO-92 | Through Hole | 3Pins | 300MHz | 110hFE | - | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC547BTA
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SC15807 |
Bipolar (BJT) Single Transistor, NPN, 45V, 100mA, 500mW, TO-92 ONSEMI The BC547BTA is a NPN epitaxial Silicon Transistor features high voltage and low noise. • Complement to BC556, BC557, BC558, BC559 and BC560 • 50V Collector-base voltage • 6V Emitter-base voltage
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NPN | - | 45V | - | 100mA | 500mW | TO-92 | Through Hole | 3Pins | 300MHz | 200hFE | - | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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2N3906BU
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SC15769 |
Bipolar (BJT) Single Transistor, PNP, 40V, -200mA, 625mW, TO-92 ONSEMI • Transistor Polarity : PNP • Collector Emitter Voltage Max : 40V • Continuous Collector Current : 200mA • Power Dissipation : 625mW • Transistor Case Style : TO-92 • Transistor Mounting : Through Hole • No. of Pins : 3Pins • Transition Frequency : 250MHz • DC Current Gain hFE Min : 30hFE • Operating Temperature Max : 150°C
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PNP | - | 40V | - | 200mA | 625mW | TO-92 | Through Hole | 3Pins | 250MHz | 30hFE | - | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MP001172
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SC20028 |
PNP Biipolar BJT Transistor, TO-92, 150V, 500mA MULTICOMP PRO • PNP, 0.6A, 150V transistor • No external components required • Internal short-circuit current limiting • Internal thermal overload protection • Features thermal shutdown and current limiting making the device remarkably rugged • Multicomp Pro products a...
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PNP | - | 150V | - | 600mA | 625mW | TO-92 | Through Hole | 3Pins | 300MHz | 60hFE | - | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MP001171
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SC20013 |
NPN Silicon Planar Epitaxial Transistor, BJT, Bipolar, Single, 80V, 1A, 1.8W, TO-18 MULTICOMP PRO The MP001171 is a 80V Silicon NPN Bipolar Transistor designed primarily for amplifier and switching application.
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NPN | - | 80V | - | 1A | 1.8W | TO-18 | Through Hole | 3Pins | 400MHz | 100hFE | - | 200°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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2N3055
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SC19494 |
Bipolar (BJT) Single Transistor, General Purpose, NPN, 60V, 15A, 115W, TO-3 MULTICOMP PRO • Transistor Polarity : NPN • Collector Emitter Voltage Max : 60V • Continuous Collector Current : 15A • Power Dissipation : 115W • Transistor Case Style : TO-3 • Transistor Mounting : Through Hole • No. of Pins : 3Pins • Transition Frequency : 2.5MHz • DC Current Gain hFE Min : 20hFE • Operating Temperature Max : 150°C • Product Range : Multicomp Pro Power NPN Transistor
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NPN | - | 60V | - | 15A | 115W | TO-3 | Through Hole | 3Pins | 2.5MHz | 20hFE | - | 150°C | Multicomp Pro Power NPN Transistor | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MJE350
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SC21514 |
Bipolar (BJT) Single Transistor, PNP, 300 V, 500 mA, 20.8 W, TO-225AA, Through Hole STMICROELECTRONICS The MJE350 is a -300V Silicon Planar PNP Complementary Power Transistor intended for use in medium power linear and switching applications. Fast switching times and very low saturation voltage resulting in reduced switching and conduction losses. • Complem...
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PNP | - | 300V | - | 500mA | 20.8W | TO-225AA | Through Hole | 3Pins | - | 240hFE | - | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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ZTX690B
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SC21331 |
Bipolar (BJT) Single Transistor, NPN, 45 V, 2 A, 1 W, E-Line, Through Hole DIODES INC. The ZTX690B is a 45V E-Line Silicon NPN Planar Medium Power High Gain Transistor featuring high gain and low saturation voltages. The transistor is ideal for siren drivers and battery powered circuits as well as Darlington replacement applications. • Gain ...
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NPN | - | 45V | - | 2A | 1W | E-Line | Through Hole | 3Pins | 150MHz | 500hFE | - | 200°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MMBT3904T-7-F
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SC21318 |
Bipolar (BJT) Single Transistor, NPN, 40 V, 200 mA, 150 mW, SOT-523, Surface Mount DIODES INC. The MMBT3904T-7-F is a NPN small signal surface-mount Bipolar Transistor offers 200mA continuous collector current and 60V collector-base voltage. • UL94V-0 Flammability rating • Epitaxial planar die construction • Ultra-small surface-mount package • MMBT3...
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NPN | - | 40V | - | 200mA | 150mW | SOT-523 | Surface Mount | 3Pins | 300MHz | 100hFE | - | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MMBT5551-7-F
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SC21319 |
Bipolar (BJT) Single Transistor, NPN, 160 V, 600 mA, 300 mW, SOT-23, Surface Mount DIODES INC. The MMBT5551-7-F is a NPN small signal Bipolar Transistor offers 600mA continuous collector current and 180V collector-base voltage. It is ideal for low power amplification and switching. • UL94V-0 Flammability rating • Epitaxial planar die construction • ...
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NPN | - | 160V | - | 600mA | 300mW | SOT-23 | Surface Mount | 3Pins | 300MHz | 80hFE | - | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC556BTA
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SC21471 |
Bipolar (BJT) Single Transistor, PNP, 65 V, 100 mA, 500 mW, TO-92, Through Hole ONSEMI The BC556BTA is a PNP epitaxial silicon Bipolar Transistor suitable for switching and amplifier applications. • High voltage VCEO • Complement to BC546
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PNP | - | 65V | - | 100mA | 500mW | TO-92 | Through Hole | 3Pins | 150MHz | 200hFE | - | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC817-25
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SC21379 |
Bipolar (BJT) Single Transistor, NPN, 45 V, 500 mA, 300 mW, SOT-23, Surface Mount MULTICOMP PRO The BC817-25 is a general purpose NPN Transistor with high collector current and high current gain. Designed for use in AF applications. • Low collector-emitter saturation voltage • Complement to BC807 • Multicomp Pro products are rated 4.6 out of 5 stars ...
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NPN | - | 45V | - | 500mA | 300mW | SOT-23 | Surface Mount | 3Pins | 170MHz | 160hFE | - | 150°C | Multicomp Pro Bipolar NPN Single Transistor | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BCX19
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SC21380 |
Bipolar (BJT) Single Transistor, NPN, 45 V, 500 mA, 250 mW, SOT-23, Surface Mount MULTICOMP PRO BCX19 is a high-performance NPN bipolar junction transistor (BJT) designed for general-purpose switching and amplification applications. With a collector-emitter voltage rating of 45V and a maximum collector current of 500 mA, this transistor offers reliab...
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NPN | - | 45V | - | 500mA | 250mW | SOT-23 | Surface Mount | 3Pins | - | 600hFE | - | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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FMMT491ATA
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SC21316 |
Bipolar (BJT) Single Transistor, NPN, 40 V, 1 A, 500 mW, SOT-23, Surface Mount DIODES INC. FMMT491ATA is a NPN silicon planar medium power transistor. • RCE(sat) = 195mohm for a low equivalent on-resistance • hFE characterized up to 2A for high current gain hold up • Qualified to AEC-Q101 standards for high reliability, PPAP capable • Collector-...
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NPN | - | 40V | - | 1A | 500mW | SOT-23 | Surface Mount | 3Pins | 150MHz | 300hFE | - | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC858B,215
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SC21410 |
Bipolar (BJT) Single Transistor, General Purpose, PNP, 30 V, 100 mA, 250 mW, SOT-23, Surface Mount NEXPERIA The BC858 series 100mA PNP General Purpose Transistor suitable for use with general purpose switching and amplification. • Surface-mount plastic package
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PNP | - | 30V | - | 100mA | 250mW | SOT-23 | Surface Mount | 3Pins | - | 220hFE | - | 150°C | BC858 | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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PZTA42T1G
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SC21487 |
Bipolar (BJT) Single Transistor, General Purpose, NPN, 300 V, 500 mA, 1.5 W, SOT-223, Surface Mount ONSEMI The PZTA42T1G is a NPN small signal Bipolar Transistor designed for use as a general purpose amplifier and in switching applications. The device is housed in the package which is designed for medium power surface-mount applications. • AEC-Q101 qualified an...
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NPN | - | 300V | - | 500mA | 1.5W | SOT-223 | Surface Mount | 4Pins | 50MHz | 50hFE | - | 150°C | - | AEC-Q101 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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D45H11
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SC21512 |
Bipolar (BJT) Single Transistor, PNP, 80 V, 10 A, 50 W, TO-220, Through Hole STMICROELECTRONICS The D45H11 is a PNP complementary Power Transistor manufactured in low voltage Multi Epitaxial Planar technology. It is intended for general purpose linear and switching applications. • Low collector-emitter saturation voltage • Fast switching speed
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PNP | - | 80V | - | 10A | 50W | TO-220 | Through Hole | 3Pins | - | 120hFE | - | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BCX19,215
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SC21412 |
Bipolar (BJT) Single Transistor, General Purpose, NPN, 45 V, 500 mA, 250 mW, SOT-23, Surface Mount NEXPERIA The BCX19 is a NPN General Purpose Transistor housed in a plastic package. It is suitable for use with the general purpose amplification, saturated switching and driver applications. • High current • Low voltage • PNP complement is BCX17 • U1 Marking code
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NPN | - | 45V | - | 500mA | 250mW | SOT-23 | Surface Mount | 3Pins | - | 100hFE | - | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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ZTX450STZ
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SC21330 |
Bipolar (BJT) Single Transistor, NPN, 45 V, 1 A, 1 W, E-Line, Through Hole DIODES INC. • Transistor Polarity : NPN • Collector Emitter Voltage Max : 45V • Continuous Collector Current : 1A • Power Dissipation : 1W • Transistor Case Style : E-Line • Transistor Mounting : Through Hole • No. of Pins : 3Pins • Transition Frequency : 150MHz • DC Current Gain hFE Min : 15hFE • Operating Temperature Max : 200°C • Product Range : ZTX Series
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NPN | - | 45V | - | 1A | 1W | E-Line | Through Hole | 3Pins | 150MHz | 15hFE | - | 200°C | ZTX Series | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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ZTX851
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SC21332 |
Bipolar (BJT) Single Transistor, NPN, 60 V, 5 A, 1.2 W, E-Line, Through Hole DIODES INC. The ZTX851 is a 60V E-Line Silicon NPN Planar Medium Power High Current Transistor with optimised chip technology to give exceptionally high current capability coupled with very low saturation voltages. • Very low saturation voltage
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NPN | - | 60V | - | 5A | 1.2W | E-Line | Through Hole | 3Pins | 130MHz | 200hFE | - | 200°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||