Single Bipolar Junction Transistors - BJT
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| Manufacturer Part No | Order Code | Description / Manufacturer | Availability | Price For |
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Quantity | Transistor Polarity | Collector Emitter Voltage V(br)ceo | Collector Emitter Voltage Max | DC Collector Current | Continuous Collector Current | Power Dissipation | Transistor Case Style | Transistor Mounting | No. of Pins | Transition Frequency | DC Current Gain hFE Min | DC Current Gain hFE | Operating Temperature Max | Product Range | Qualification | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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ZTX551
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SC10974 |
Transistor, PNP, E-Line DIODES INC. The ZTX551 is a PNP silicon planar medium power Bipolar Transistor offers -1A continuous collector current and -80V collector-base voltage. • -55 to 200°C Operating temperature range
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PNP | - | 60V | - | 1A | 1W | E-Line | Through Hole | 3Pins | 150MHz | 50hFE | - | 200°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MJE340
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SC06487 |
Si-N 300V 0.5A 20W Vidpow STMICROELECTRONICS The MJE340 is a 300V Silicon Planar NPN Complementary Power Transistor intended for use in medium power linear and switching applications. Fast switching times and very low saturation voltage resulting in reduced switching and conduction losses. • Compleme...
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NPN | - | 300V | - | 500mA | 20.8W | TO-225AA | Through Hole | 3Pins | - | 240hFE | - | 150°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BC817-16,215
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SC10625 |
Transistor, NPN, SOT23 NXP • Transistor Polarity : NPN • Collector Emitter Voltage Max : 45V • Continuous Collector Current : 500mA • Power Dissipation : 250mW • Transistor Case Style : SOT-23 • No. of Pins : 3Pins • DC Current Gain hFE Min : 100hFE • Operating Temperature Max : 150°C
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1+ €0.1309 (€0.16) 10+ €0.0833 (€0.10) 50+ €0.0476 (€0.06) |
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NPN | - | 45V | - | 500mA | 250mW | SOT-23 | - | 3Pins | - | 100hFE | - | 150°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC846A
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SC06583 |
Transistor, NPN SOT23 NXP • Transistor Polarity : NPN • Collector Emitter Voltage Max : 65V • Continuous Collector Current : 100mA • Power Dissipation : 500mW • Transistor Case Style : SOT-23 • Transistor Mounting : Surface Mount • No. of Pins : 3Pins • Transition Frequency : 100MHz • DC Current Gain hFE Min : 180hFE • Operating Temperature Max : 150°C
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NPN | - | 65V | - | 100mA | 500mW | SOT-23 | Surface Mount | 3Pins | 100MHz | 180hFE | - | 150°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MJE15030
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SC05826 |
Transistor, NPN TO220 ONSEMI • Transistor Polarity : NPN • Collector Emitter Voltage Max : 150V • Continuous Collector Current : 8A • Power Dissipation : 2W • Transistor Case Style : TO-220 • Transistor Mounting : Through Hole • No. of Pins : 3Pins • DC Current Gain hFE Min : 40hFE • Operating Temperature Max : 150°C
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1+ €1.785 (€2.20) 10+ €1.4875 (€1.83) 100+ €1.2852 (€1.58) |
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NPN | - | 150V | - | 8A | 2W | TO-220 | Through Hole | 3Pins | - | 40hFE | - | 150°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC856B
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SC06599 |
Transistor, PNP SOT23 NXP • Transistor Polarity : PNP • Collector Emitter Voltage Max : 65V • Continuous Collector Current : 100mA • Power Dissipation : 250mW • Transistor Case Style : SOT-23 • Transistor Mounting : Surface Mount • No. of Pins : 3Pins • Transition Frequency : 100MHz • DC Current Gain hFE Min : 220hFE • Operating Temperature Max : 150°C
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PNP | - | 65V | - | 100mA | 250mW | SOT-23 | Surface Mount | 3Pins | 100MHz | 220hFE | - | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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ZTX853.
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SCZTX853 |
NPN 200V 4A 1200mW TO92 Q23 DIODES INC. • Transistor Polarity : NPN • Collector Emitter Voltage Max : 100V • Continuous Collector Current : 4A • Power Dissipation : 1.2W • Transistor Case Style : E-Line • Transistor Mounting : Through Hole • No. of Pins : 3Pins • Transition Frequency : 130MHz • DC Current Gain hFE Min : 100hFE • Operating Temperature Max : 200°C
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1+ €0.714 (€0.88) 10+ €0.6664 (€0.82) 100+ €0.5593 (€0.69) |
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NPN | - | 100V | - | 4A | 1.2W | E-Line | Through Hole | 3Pins | 130MHz | 100hFE | - | 200°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MJE350
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SC08528 |
Transistor, PNP, TO126 MULTICOMP PRO The MJE350 is a -300V PNP Plastic Medium Power Transistor designed for use line-operated applications such as low power, line operated series pass and switching regulator requiring PNP capability. • Collector-base voltage(Vcbo = 300V) • Emitter-base voltag...
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PNP | - | 300V | - | 500mA | 20W | - | Through Hole | 3Pins | - | 30hFE | - | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MJ21194G
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SC06817 |
Transistor, NPN, TO3 ONSEMI The MJ21194G is a 250V Silicon NPN Bipolar Power Transistor that utilizes perforated emitter technology and is specifically designed for high power audio output, disk head positioners and linear applications. • Total harmonic distortion characterized • Hig...
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1+ €9.758 (€12.00) 10+ €8.3776 (€10.30) 100+ €7.3304 (€9.02) |
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NPN | - | 250V | - | 16A | 250W | TO-3 | Through Hole | 2Pins | 4MHz | 8hFE | - | 200°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BCW32
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SC10949 |
Transistor, NPN, SOT23 NXP The BCW32 is a NPN General Purpose Transistor housed in a plastic package. It is suitable for use with general purpose switching and amplification. • Low current • Low voltage • PNP complements are BCW29 and BCW30 • D2 Marking code
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NPN | - | 32V | - | 100mA | 250mW | SOT-23 | Surface Mount | 3Pins | - | 330hFE | - | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MPSA44
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SC09159 |
Transistor, NPN, TO92 MULTICOMP PRO The MPSA44 is a NPN epitaxial planar silicon high voltage Transistor with breakdown voltages of 160V minimum, for applications requiring relatively low collector current, such as lamp drivers and neon tubes. Designed for general purpose applications requir...
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NPN | - | 400V | - | 300mA | 625mW | TO-92 | Through Hole | 3Pins | - | 50hFE | - | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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ZTX453.
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SCZTX453 |
NPN 120V 1A 1W DIODES INC. • Transistor Polarity : NPN • Collector Emitter Voltage Max : 100V • Continuous Collector Current : 1A • Power Dissipation : 1W • Transistor Case Style : E-Line • Transistor Mounting : Through Hole • No. of Pins : 3Pins • DC Current Gain hFE Min : 150hFE • Operating Temperature Max : 200°C
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1+ €0.4522 (€0.56) 10+ €0.3927 (€0.48) 100+ €0.357 (€0.44) |
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NPN | - | 100V | - | 1A | 1W | E-Line | Through Hole | 3Pins | - | 150hFE | - | 200°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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TIP2955
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SC06789 |
Transistor, PNP, TO3P MULTICOMP PRO The TIP2955 is a -60V Silicon PNP Complementary Power Transistor designed for general purpose amplifier and low speed switching applications. • DC current gain (hfe = 20 to 100 at Ic = 4A) • Collector-emitter saturation voltage(Vce (sat) = 1.1V maximum at ...
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PNP | - | 60V | - | 15A | 90W | TO-247 | Through Hole | 3Pins | 2.5MHz | 100hFE | - | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MJ15025G
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SC06787 |
Transistor, PNP, TO3 ONSEMI The MJ15025G is a -250V Silicon PNP Bipolar Power Transistor designed for high power audio, disk head positioners and other linear applications. • High DC current gain • High safe operating area • Collector-base voltage (Vcbo = 400V) • Emitter-base voltage...
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PNP | - | 250V | - | 16A | 250W | TO-3 | Through Hole | 2Pins | 4MHz | 60hFE | - | 200°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC849B
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SC06619 |
Transistor, NPN SOT23 ONSEMI • Transistor Polarity : NPN • Collector Emitter Voltage Max : 30V • Continuous Collector Current : 100mA • Power Dissipation : 300mW • Transistor Case Style : SOT-23 • Transistor Mounting : Surface Mount • No. of Pins : 3Pins • DC Current Gain hFE Min : 200hFE • Operating Temperature Max : 150°C
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NPN | - | 30V | - | 100mA | 300mW | SOT-23 | Surface Mount | 3Pins | - | 200hFE | - | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC549C
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SC12757 |
Transistor, NPN, TO92 MULTICOMP PRO The BC549C from Multicomp Pro are through hole, NPN silicon planar epitaxial general purpose transistor in TO-92 metal can package. This device is typically used in driver stages of audio amplifiers, tape recorders, low noise input stages, Hi-Fi amplifiers...
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5+ €0.2142 (€0.26) 25+ €0.119 (€0.15) 100+ €0.0952 (€0.12) 1000+ €0.0833 (€0.10) |
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NPN | - | 30V | - | 100mA | 625mW | TO-92 | Through Hole | 3Pins | 250MHz | 500hFE | - | 150°C | Multicomp Pro Bipolar Transistor | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BCW33
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SC10626 |
Transistor, NPN, SOT23 NXP The BCW33 is a NPN General Purpose Transistor housed in a plastic package. It is suitable for use with general purpose switching and amplification. • Low current • Low voltage • PNP complements are BCW29 and BCW30 • D3 Marking code
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NPN | - | 32V | - | 100mA | 250mW | SOT-23 | Surface Mount | 3Pins | - | 600hFE | - | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BCW72
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SC06593 |
Transistor, NPN SOT23 NXP The BCW72 is a NPN General Purpose Transistor housed in a plastic package. It is suitable for use with the general purpose switching and amplification. • Low current • Low voltage • Low noise • K2 Marking code
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NPN | - | 45V | - | 100mA | 250mW | SOT-23 | Surface Mount | 3Pins | 100MHz | 150hFE | - | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC107
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SC06644 |
Si-NPN Uni 50V 0.2A 0.3W MULTICOMP PRO The BC107 from Multicomp Pro is a low power bipolar transistor in TO-18 metal can package. This NPN silicon planar epitaxial transistor is used for general purpose switching and amplification. • Collector emitter voltage (Vce) is 45V at IC = 2mA, IB = 0 • ...
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NPN | - | 45V | - | 200mA | 750mW | TO-18 | Through Hole | 3Pins | 150MHz | 110hFE | - | 200°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC850C
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SC06590 |
Transistor, NPN SOT23 NXP • Transistor Polarity : NPN • Collector Emitter Voltage Max : 45V • Continuous Collector Current : 100mA • Power Dissipation : 250mW • Transistor Case Style : SOT-23 • Transistor Mounting : Surface Mount • No. of Pins : 3Pins • DC Current Gain hFE Min : 520hFE • Operating Temperature Max : 150°C
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NPN | - | 45V | - | 100mA | 250mW | SOT-23 | Surface Mount | 3Pins | - | 520hFE | - | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC817-25
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SC06613 |
Transistor, NPN, SOT23 NXP • Transistor Polarity : NPN • Collector Emitter Voltage Max : 45V • Continuous Collector Current : 500mA • Power Dissipation : 250mW • Transistor Case Style : SOT-23 • Transistor Mounting : Surface Mount • No. of Pins : 3Pins • Transition Frequency : 200MHz • DC Current Gain hFE Min : 160hFE • Operating Temperature Max : 150°C
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NPN | - | 45V | - | 500mA | 250mW | SOT-23 | Surface Mount | 3Pins | 200MHz | 160hFE | - | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MJ21193G
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SC06826 |
Transistor, PNP, TO3 ONSEMI The MJ21193G is a -250V Silicon PNP Bipolar Power Transistor that utilizes perforated emitter technology and is specifically designed for high power audio output, disk head positioners and linear applications. • Total harmonic distortion characterized • Hi...
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PNP | - | 250V | - | 16A | 250W | TO-3 | Through Hole | 3Pins | 4MHz | 75hFE | - | 200°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC177
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SC06647 |
Transistor, PNP, TO18 MULTICOMP PRO The BC177 is a -45V Silicon PNP Bipolar Planar Epitaxial Transistor with low power. • Collector-base voltage(Vcbo = 50V) • Emitter-base voltage(Vebo = 5V) • Multicomp Pro products are rated 4.6 out of 5 stars • 12 month limited warranty *view Terms & Condi...
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PNP | - | 45V | - | 200mA | 600mW | TO-18 | Through Hole | 3Pins | 200MHz | 120hFE | - | 200°C | Multicomp Pro Bipolar Transistors PNP | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC109
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SC06717 |
Transistor, NPN, TO18 MULTICOMP PRO The BC109 from Multicomp Pro are through hole, NPN low power, silicon planar epitaxial transistors in TO-18 metal can package. This device is used for switching and amplification. • Collector emitter voltage (Vce) of 25V • Continuous collector current (Ic)...
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NPN | - | 25V | - | 200mA | 600mW | TO-18 | Through Hole | 3Pins | 150MHz | 240hFE | - | 200°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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ZTX450
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SC10969 |
Transistor, NPN, E-Line DIODES INC. ZTX450 is a through hole, NPN silicon planar medium power transistor in E-Line (TO-92 Compatible) package. • Collector to emitter voltage (Vce) of 45V • Collector to base voltage of 60V • Power dissipation (Pd) of 1W • Continuous collector current of 1A • ...
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NPN | - | 45V | - | 1A | 1W | E-Line | Through Hole | 3Pins | 150MHz | 100hFE | - | 200°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||