Single Bipolar Junction Transistors - BJT
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| Manufacturer Part No | Order Code | Description / Manufacturer | Availability | Price For |
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Quantity | Transistor Polarity | Collector Emitter Voltage V(br)ceo | Collector Emitter Voltage Max | DC Collector Current | Continuous Collector Current | Power Dissipation | Transistor Case Style | Transistor Mounting | No. of Pins | Transition Frequency | DC Current Gain hFE Min | DC Current Gain hFE | Operating Temperature Max | Product Range | Qualification | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SMBT3904
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SC10623 |
Transistor, NPN, SOT23 INFINEON • Transistor Polarity : NPN • Collector Emitter Voltage Max : 40V • Continuous Collector Current : 200mA • Power Dissipation : 330mW • Transistor Case Style : SOT-23 • Transistor Mounting : Surface Mount • No. of Pins : 3Pins • Transition Frequency : 270MHz • DC Current Gain hFE Min : 100hFE • Operating Temperature Max : 150°C
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NPN | - | 40V | - | 200mA | 330mW | SOT-23 | Surface Mount | 3Pins | 270MHz | 100hFE | - | 150°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
FZT653
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SC10978 |
Transistor, NPN, SOT223 DIODES INC. The FZT653 is a NPN High Performance Transistor with matte tin-plated terminals, UL94V-0-flame rated moulded plastic case, solderable terminals as per MIL-STD-202, method 208 standard. • Complement to FZT753 • Level-1 per J-STD-020 moisture sensitivity • G...
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NPN | - | 100V | - | 2A | 2W | SOT-223 | Surface Mount | 4Pins | 175MHz | 200hFE | - | 150°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2N5551
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SC06652 |
Si-N 180V 0.6A 0.31W TO92 Q14 ONSEMI The 2N5551 is a through hole, NPN general purpose amplifier in TO-92 package. This device is designed for general purpose high voltage amplifiers and gas discharge display drivers. • Collector to emitter breakdown voltage of 160V • Collector to emitter sat...
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NPN | - | 160V | - | 600mA | 625mW | - | Through Hole | 3Pins | 150MHz | 80hFE | - | 150°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
D45H8G
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SC06761 |
Transistor, PNP, TO220 ONSEMI The D45H8G is a 10A PNP bipolar Power Transistor offers low collector-emitter saturation voltage. It can be used as general purpose power amplification and switching such as output or driver stages in applications such as switching regulators, converters a...
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1+ €1.1424 (€1.41) 10+ €0.952 (€1.17) 100+ €0.8092 (€1.00) |
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PNP | - | 60V | - | 10A | 70W | TO-220 | Through Hole | 3Pins | 40MHz | 60hFE | - | 150°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BU406
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SC06796 |
Transistor, NPN, TO220 MULTICOMP PRO The BU406 is a NPN Power Transistor for horizontal deflection output stages of TV and CTV circuits. • High voltage • Collector-emitter sustaining voltage (Vceo (sus) = 400V minimum) • Low saturation voltage • Fast switching speed • Multicomp Pro products a...
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1+ €1.1305 (€1.39) 10+ €0.9877 (€1.21) 100+ €0.8568 (€1.05) 500+ €0.7021 (€0.86) |
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NPN | - | 200V | - | 7A | 60W | TO-220 | Through Hole | 3Pins | 10MHz | 30hFE | - | 150°C | Multicomp Pro Bipolar Power Transistors NPN | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BU426A
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SC06797 |
Transistor, NPN, TO218 MULTICOMP PRO The BU426A is a NPN Fast Switching High Voltage Transistor more specially intended for operating in colour TV supply systems. • Collector-emitter sustaining voltage (Vceo (sus) = 400V minimum) • Low collector-emitter saturation voltage • High voltage power...
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1+ €2.1301 (€2.62) 10+ €1.9873 (€2.44) 100+ €1.7017 (€2.09) 500+ €1.428 (€1.76) |
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NPN | - | 400V | - | 6A | 113W | TO-247 | Through Hole | 3Pins | - | 8hFE | - | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BD135
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SC10992 |
Transistor, NPN, TO126 STMICROELECTRONICS The BD135 is a NPN low voltage Transistor built in epitaxial planar technology. Designed for audio amplifiers and drivers utilizing complementary or quasi-complementary circuits. • Complement to BD136 • 0.5A Base current • 10°C/W Junction-to-case thermal r...
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1+ €0.238 (€0.29) 10+ €0.2023 (€0.25) 100+ €0.1904 (€0.23) |
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NPN | - | 45V | - | 1.5A | 1.25W | TO-126 | Through Hole | 3Pins | - | 250hFE | - | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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D44H8G
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SC06751 |
Transistor, NPN, TO220 ONSEMI The D44H8G is a 10A NPN bipolar Power Transistor offers low collector-emitter saturation voltage. It can be used as general purpose power amplification and switching such as output or driver stages in applications such as switching regulators, converters a...
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1+ €1.2614 (€1.55) 10+ €1.0591 (€1.30) 100+ €0.8925 (€1.10) |
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NPN | - | 60V | - | 10A | 2W | TO-220 | Through Hole | 3Pins | 50MHz | 60hFE | - | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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FZT651
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SC10977 |
Transistor, NPN, SOT223 DIODES INC. The FZT651 from Diode Inc is a surface mount, 60V NPN high performance transistor in SOT-223 package. This device is based on moulded plastic and “Green” moulding compound, terminals are matte tin finish. • Automotive grade AEC-Q101 qualified • UL recogniz...
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NPN | - | 60V | - | 3A | 2W | SOT-223 | Surface Mount | 4Pins | 175MHz | 200hFE | - | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BD136
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SC09318 |
Transistor, PNP, TO126 STMICROELECTRONICS The BD136 is a PNP complementary epitaxial planar Low Voltage Transistor mounted in the plastic package. It is designed for audio amplifiers and drivers utilizing complementary or quasi-complementary circuits. • Pre-selected in DC current gain
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PNP | - | 45V | - | 1A | 1.25W | TO-126 | Through Hole | 3Pins | - | 40hFE | - | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MJE3055T
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SC06752 |
Transistor, NPN, TO220 MULTICOMP PRO The MJE3055T is a 60V Silicon NPN Complementary Power Transistor designed for use in general purpose amplifier and switching applications. • DC current gain (hfe = 20 minimum at Ic = 4A) • Collector-emitter saturation voltage(Vce (sat) = 1.1V maximum at Ic...
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1+ €0.6426 (€0.79) 10+ €0.595 (€0.73) 100+ €0.4998 (€0.61) |
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NPN | - | 60V | - | 10A | 75W | TO-220 | Through Hole | 3Pins | 2MHz | 20hFE | - | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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TIP35C
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SC06791 |
Transistor, NPN, TO247, 100V, 3MHz, 125W, 25A STMICROELECTRONICS The TIP35C from STMicroelectronics is a through hole complementary power transistor in TO-247 package. This device manufactured in planar technology with “base island” layout resulting in exceptional high gain performance coupled with very low saturation v...
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1+ €2.5942 (€3.19) 10+ €2.1539 (€2.65) 100+ €1.8564 (€2.28) |
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NPN | - | 100V | - | 25A | 125W | TO-247 | Through Hole | 3Pins | 3MHz | 10hFE | - | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BCX17
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SC06607 |
Transistor, PNP SOT23 NXP The BCX17 is a PNP General Purpose Transistor housed in a plastic package. It is suitable for use with the saturated switching and driver applications, thick and thin-film circuits. • High current • Low voltage • NPN complement is BCX19 • T1 Marking code
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PNP | - | 45V | - | 500mA | 250mW | SOT-23 | Surface Mount | 3Pins | - | 100hFE | - | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MJE15033G
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SC06827 |
Transistor, PNP, TO220 ONSEMI The MJE15033G is a PNP Power Transistor designed for use as a high-frequency driver in audio amplifiers. High current gain bandwidth and high DC current gain. • 62.5°C/W Junction-to-ambient thermal resistance • 2.5°C/W Junction-to-case thermal resistance
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PNP | - | 250V | - | 8A | 50W | TO-220 | Through Hole | 3Pins | 30MHz | 30hFE | - | 150°C | MJxxxx | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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ZTX651
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SC10970 |
Transistor, NPN, E-Line DIODES INC. The ZTX651 from Diode Inc is a through hole, 60V NPN medium power transistor in E-Line (TO-92 Compatible) package. This device is based on moulded plastic and “Green” moulding compound and terminals are matte tin finish. • Automotive grade AEC-Q101 qualifi...
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NPN | - | 60V | - | 2A | 1W | TO-92 | Through Hole | 3Pins | 175MHz | 100hFE | - | 200°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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2N2905A
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SC06713 |
Transistor, PNP, TO39 MULTICOMP PRO General purpose silicon planar PNP switching transistor. • Multicomp Pro products are rated 4.6 out of 5 stars • 12-month limited warranty *view Terms & Conditions for details • 96% of customers would recommend to a friend
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PNP | - | 60V | - | 600mA | 3W | TO-39 | Through Hole | 3Pins | 200MHz | 100hFE | - | 200°C | Multicomp Pro Bipolar PNP Transistors | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC807-16
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SC06596 |
Transistor, PNP SOT23 NXP The BC807 series 500mA PNP General Purpose Transistor suitable for use with general purpose switching and amplification. • High current • Low voltage • BC817 NPN complement
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PNP | - | 45V | - | 500mA | 250mW | SOT-23 | Surface Mount | 3Pins | - | 100hFE | - | 150°C | BC807 | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC108
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SC06646 |
Transistor, NPN, TO18 MULTICOMP PRO The BC108 from Multicomp Pro are through hole, NPN low power, silicon planar epitaxial transistors in TO-18 metal can package. This device is used for switching and amplification. • Collector emitter voltage (Vce) of 25V • Continuous collector current (Ic)...
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NPN | - | 25V | - | 200mA | 750mW | TO-18 | Through Hole | 3Pins | 150MHz | 110hFE | - | 200°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BD437
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SC09319 |
Transistor, NPN, TO126 STMICROELECTRONICS The BD437 is a NPN silicon complementary epitaxial-base Power Transistor in a JEDEC plastic package. It is intended for use in medium power linear and switching applications. • PNP complementary type is BD438
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NPN | - | 45V | - | 4A | 36W | TO-126 | Through Hole | 3Pins | 3MHz | 140hFE | - | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC337-25
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SC06663 |
Si-N 50V 0.625W 150MHz MULTICOMP PRO • Transistor Polarity : NPN • Collector Emitter Voltage Max : 45V • Power Dissipation : 625mW • Transistor Mounting : Through Hole • No. of Pins : 3Pins
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NPN | - | 45V | - | - | 625mW | - | Through Hole | 3Pins | - | - | - | - | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MJ15003
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SC06779 |
Transistor, NPN, TO3 MULTICOMP PRO The MJ15003 from Multicomp Pro are through hole, NPN Complementary silicon power transistors in TO-3 metal can package. This transistor is suitable in high power audio, disk head positioners and other linear applications. • Collector emitter voltage (Vce) ...
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NPN | - | 140V | - | 20A | 250W | TO-3 | Through Hole | 2Pins | 2MHz | 25hFE | - | 200°C | Multicomp Pro Bipolar NPN Single Transistors | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MJ15022G
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SC06781 |
Transistor, NPN, TO3 ONSEMI The MJ15022G is a 200V Silicon NPN Bipolar Power Transistor designed for high power audio, disk head positioners and other linear applications. • High DC current gain • High safe operating area • Collector-base voltage (Vcbo = 350V) • Emitter-base voltage ...
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NPN | - | 200V | - | 16A | 250W | TO-3 | Through Hole | 2Pins | 4MHz | 60hFE | - | 200°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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TIP3055
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SC06790 |
Transistor, NPN, TO218 STMICROELECTRONICS The TIP3055 from STMicroelectronics is a through hole complementary power transistor in TO-247 package. This device manufactured in epitaxial base planar technology and suitable for general purpose, power linear and switching applications. • Collector to e...
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NPN | - | 70V | - | 15A | 90W | TO-247 | Through Hole | 3Pins | - | 20hFE | - | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC635
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SC06696 |
Transistor, NPN, TO92 MULTICOMP PRO The BC635 is a NPN silicon planar epitaxial medium power Bipolar Transistor with high performance, low frequency devices typically with current ratings 1A up to 1W power dissipation. • Driver stages of audio amplifier application • 45°C/W Junction-to-case ...
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NPN | - | 45V | - | 1A | 800mW | TO-92 | Through Hole | 3Pins | 200MHz | 100hFE | - | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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PMBT4403
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SC06611 |
Transistor, PNP SOT23 NXP • Transistor Polarity : PNP • Collector Emitter Voltage Max : 40V • Continuous Collector Current : 600mA • Power Dissipation : 250mW • Transistor Case Style : SOT-23 • Transistor Mounting : Surface Mount • No. of Pins : 3Pins • Transition Frequency : 250MHz • DC Current Gain hFE Min : 100hFE • Operating Temperature Max : 150°C
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PNP | - | 40V | - | 600mA | 250mW | SOT-23 | Surface Mount | 3Pins | 250MHz | 100hFE | - | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||