Single Bipolar Junction Transistors - BJT
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| Manufacturer Part No | Order Code | Description / Manufacturer | Availability | Price For |
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Quantity | Transistor Polarity | Collector Emitter Voltage V(br)ceo | Collector Emitter Voltage Max | DC Collector Current | Continuous Collector Current | Power Dissipation | Transistor Case Style | Transistor Mounting | No. of Pins | Transition Frequency | DC Current Gain hFE Min | DC Current Gain hFE | Operating Temperature Max | Product Range | Qualification | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC807-25,215
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SC16016 |
Bipolar (BJT) Single Transistor, PNP, 45V, -500mA, 250mW, SOT-23, SMD NEXPERIA The BC807-25 is a PNP general purpose Transistor with 3 leads, high current and low voltage, plastic surface mount package. Designed for switching and amplification applications. • 150°C Junction temperature • 5pF Collector capacitance
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PNP | - | 45V | 500mA | 500mA | 250mW | SOT-23 | Surface Mount | 3Pins | 100MHz | 160hFE | 160hFE | 150°C | BC807 | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MJD45H11G
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SC16105 |
Bipolar (BJT) Single Transistor, Audio, PNP, 80V, 8A, 20W, TO-252 (DPAK), SMD ONSEMI The MJD45H11G is a 8A PNP bipolar Power Transistor designed for general purpose power and switching output or driver stages in applications such as switching regulators, converters and power amplifiers. • Electrically similar to popular D44H/D45H series • ...
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PNP | - | 80V | 8A | 8A | 20W | TO-252 (DPAK) | Surface Mount | 3Pins | 90MHz | 60hFE | 60hFE | 150°C | - | AEC-Q101 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BC817-40LT1G
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SC16051 |
Bipolar (BJT) Single Transistor, NPN, 45V, 500mA, 225mW, SOT-23, SMD ONSEMI The BC817-40LT1G is a 45V NPN silicon Bipolar Transistor designed for use in linear and switching applications. The device is suitable for lower power surface mount applications, ESD protection, polarity reversal protection, data line protection, inductive...
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NPN | - | 45V | 500mA | 500mA | 225mW | SOT-23 | Surface Mount | 3Pins | 100MHz | 250hFE | 250hFE | 150°C | - | AEC-Q101 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC857BLT1G
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SC16057 |
Bipolar (BJT) Single Transistor, PNP, -45V, -100mA, 225mW, SOT-23 ONSEMI The BC857BLT1G is a -45V PNP silicon Bipolar Transistor designed for use in linear and switching applications. The device is suitable for lower power surface mount applications. • Halogen-free/BFR-free • -50V Collector to base voltage (VCBO) • -5V Emitter ...
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PNP | 45V | 45V | 100mA | 100mA | 225mW | SOT-23 | Surface Mount | 3Pins | 100MHz | 100hFE | 100hFE | 150°C | BCxxx | AEC-Q101 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BC546BTF
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SC15782 |
Bipolar (BJT) Single Transistor, NPN, 65V, 100mA, 500mW, TO-92 ONSEMI The BC546BTF is a NPN epitaxial silicon Bipolar Transistor suitable for switching and amplifier applications. • High voltage VCEO • Complement to BC556
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NPN | - | 65V | - | 100mA | 500mW | TO-92 | Through Hole | 3Pins | 300MHz | 200hFE | - | 150°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC846ALT1G
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SC16099 |
Bipolar (BJT) Single Transistor, NPN, 65V, 100mA, 300mW, SOT-23, SMD ONSEMI The BC846ALT1G is a NPN Bipolar Transistor designed for use in linear and switching applications. The device is housed in the package which is designed for lower power surface-mount applications. • Halogen-free • AEC-Q101 qualified and PPAP capable • Moist...
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NPN | - | 65V | 100mA | 100mA | 300mW | SOT-23 | Surface Mount | 3Pins | 100MHz | 100hFE | 100hFE | 150°C | BCxxx | AEC-Q101 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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2N6109
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SC15381 |
Bipolar Transistor, PNP, 50V, 7A, TO-220 MULTICOMP PRO The 2N6109 is a -50V Silicon PNP Complementary Plastic Power Transistor designed for use in general purpose amplifier and switching applications. • DC current gain (hfe = 30 to 150 at Ic = 7A) • Collector-emitter sustaining voltage (Vceo (sus) = 50VDC mini...
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PNP | - | 50V | - | 7A | 40W | TO-220 | Through Hole | 3Pins | 10MHz | 30hFE | - | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MJ15003G
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SC15816 |
Bipolar (BJT) Single Transistor, Audio, NPN, 140V, 20A, 250W, TO-3 ONSEMI The MJ15003G is a Power Transistor designed for high power audio, disk head positioners and other linear applications. High safe operating area and high DC current gain. Ideal for low distortion complementary designs. • 140VDC Collector-base voltage • 0.70...
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NPN | - | 140V | - | 20A | 250W | TO-3 | Through Hole | 2Pins | 2MHz | 150hFE | - | 200°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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PBSS8110T,215
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SC16078 |
Bipolar (BJT) Single Transistor, NPN, 100V, 1A, 300mW, SOT-23, SMD NEXPERIA The PBSS8110T is a 1A NPN breakthrough-in small signal (BISS) Transistor housed in a surface-mount plastic package. • Low collector-emitter saturation voltage VCEsat • High collector current capability IC and ICM • Higher efficiency leading to less heat ge...
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NPN | - | 100V | 1A | 1A | 300mW | SOT-23 | Surface Mount | 3Pins | - | 150hFE | 150hFE | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC556BTA
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SC15787 |
Bipolar (BJT) Single Transistor, PNP, -65V, -100mA, 500mW, TO-92 ONSEMI The BC556BTA is a PNP epitaxial silicon Bipolar Transistor suitable for switching and amplifier applications. • High voltage VCEO • Complement to BC546
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PNP | - | 65V | - | 100mA | 500mW | TO-92 | Through Hole | 3Pins | 150MHz | 200hFE | - | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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PMBT3904,215
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SC16113 |
Bipolar (BJT) Single Transistor, Switching, NPN, 40V, 200mA, 250mW, TO-236AB, SMD NEXPERIA The PMBT3904,215 is a NPN Switching Transistor housed in a surface-mount plastic package. • PNP complement is PMBT3906 • 1A Marking code
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NPN | - | 40V | 200mA | 200mA | 250mW | TO-236AB | Surface Mount | 3Pins | 300MHz | 100hFE | 100hFE | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC550CTA
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SC15786 |
Bipolar (BJT) Single Transistor, NPN, 45V, 100mA, 500mW, TO-92 ONSEMI The BC550CTA is a NPN epitaxial silicon Bipolar Transistor suitable for switching and amplifier applications. • Low noise • Complement to BC560
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NPN | - | 45V | - | 100mA | 500mW | TO-92 | Through Hole | 3Pins | 300MHz | 420hFE | - | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC846,215
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SC16015 |
Bipolar (BJT) Single Transistor, NPN, 45V, 500mA, 250mW, SOT-23, SMD NEXPERIA The BC846,215 is a NPN general purpose Transistor in SMD plastic package. • Two Different Gain Selections
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NPN | - | 65V | 100mA | 100mA | 250mW | SOT-23 | Surface Mount | 3Pins | 100MHz | 110hFE | 110hFE | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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PN2222ABU
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SC15797 |
Bipolar (BJT) Single Transistor, NPN, 40V, 1A, 625mW, TO-226AA ONSEMI The PN2222ABU is a 40V NPN Bipolar (BJT) Single Transistor for use as a medium power amplifier and switch requiring collector currents up to 500mA. This product is general usage and suitable for many different applications. • 75V Collector to base voltage ...
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NPN | - | 40V | - | 1A | 625mW | TO-226AA | Through Hole | 3Pins | 300MHz | 35hFE | - | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MMBT5401LT1G
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SC16070 |
Bipolar (BJT) Single Transistor, PNP, -150V, -500mA, 225mW, SOT-23 ONSEMI The MMBT5401LT1G is a PNP high voltage Bipolar Transistor designed for general purpose switching applications. The device is housed in the package which is designed for lower power surface-mount applications. • Halogen-free • AEC-Q101 qualified and PPAP ca...
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PNP | 150V | 150V | 500mA | 500mA | 225mW | SOT-23 | Surface Mount | 3Pins | 300MHz | 100hFE | 100hFE | 150°C | MMBTxxxx | AEC-Q101 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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2N2219A
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SC15752 |
Bipolar (BJT) Single Transistor, NPN, 40V, 300MHz, 400mW, 800mA, 35 hFE MULTICOMP PRO 2N2219A is a NPN silicon transistor for high speed switching applications. • 75V collector-base voltage • 6V emitter-base voltage • 1.2W total device dissipation • Multicomp Pro products are rated 4.6 out of 5 stars • 12 month limited warranty *view Terms ...
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NPN | - | 40V | - | 800mA | 3W | TO-39 | Through Hole | 3Pins | 300MHz | 100hFE | - | 200°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MMBT3906,215
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SC16097 |
Bipolar (BJT) Single Transistor, Switching, PNP, -40V, -200mA, 250mW, TO-236AB, SMD NEXPERIA The MMBT3906,215 is a PNP Switching Transistor housed in a plastic package. It is suitable for use with the switching and linear amplification. • NPN complement is MMBT3904 • 7B Marking code
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PNP | 40V | 40V | 200mA | 200mA | 250mW | TO-236AB | Surface Mount | 3Pins | 250MHz | 100hFE | 100hFE | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SS8550DBU
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SC15798 |
Bipolar (BJT) Single Transistor, PNP, -25V, -1.5A, 1W, TO-226AA ONSEMI The SS8550DBU is a PNP Epitaxial Silicon Transistor designed for use in 2W output amplifier of portable radios in Class B push-pull operation. • Complimentary to SS8050
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PNP | - | 25V | - | 1.5A | 1W | TO-226AA | Through Hole | 3Pins | 200MHz | 160hFE | - | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC807-40LVL
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SC15934 |
Bipolar (BJT) Single Transistor, PNP, -45V, -500mA, 250mW, TO-236AB, SMD NEXPERIA • Transistor Polarity : PNP • Collector Emitter Voltage V(br)ceo : 45V • Collector Emitter Voltage Max : 45V • DC Collector Current : 500mA • Continuous Collector Current : 500mA • Power Dissipation : 250mW • Transistor Case Style : TO-236AB • Transistor Mounting : Surface Mount • No. of Pins : 3Pins • Transition Frequency : 80MHz • DC Current Gain hFE Min : 250hFE • DC Current Gain hFE : 250hFE • Operating Temperature Max : 150°C • Product Range : BC807L • Qualification : AEC-Q101
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PNP | 45V | 45V | 500mA | 500mA | 250mW | TO-236AB | Surface Mount | 3Pins | 80MHz | 250hFE | 250hFE | 150°C | BC807L | AEC-Q101 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BD139-10
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SC15373 |
Bipolar Transistor, NPN, 80V, 1.5A, TO-126 MULTICOMP PRO The BD139-10 is a NPN Transistor with 80V collector-emitter voltage and 12.5W power dissipation. • Collector-base voltage(Vcbo = 100V) • Emitter-base voltage(Vebo = 5V) • Multicomp Pro products are rated 4.6 out of 5 stars • 12 month limited warranty *view...
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NPN | - | 80V | - | 1.5A | 12.5W | TO-126 | Through Hole | 3Pins | - | 63hFE | - | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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FMMT591
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SC16027 |
Bipolar (BJT) Single Transistor, PNP, 60V, -1A, 500mW, SOT-23, SMD DIODES INC. The FMMT591 is a PNP silicon planar medium power Bipolar Transistor offers 355mΩ low equivalent on resistance RCE (sat) at 1A. • FMMT491 Complementary NPN type • -55 to 150°C Operating temperature range
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PNP | - | 60V | 1A | 1A | 500mW | SOT-23 | Surface Mount | 3Pins | 150MHz | 100hFE | 100hFE | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC846BW,115
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SC16050 |
Bipolar (BJT) Single Transistor, NPN, 65V, 100mA, 200mW, SOT-323, SMD NEXPERIA The BC846BW,115 is a NPN Switching Transistor in surface mount device plastic package with 3 leads. • Two different gain selections
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NPN | - | 65V | 100mA | 100mA | 200mW | SOT-323 | Surface Mount | 3Pins | 100MHz | 200hFE | 200hFE | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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FZT853
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SC16106 |
Bipolar (BJT) Single Transistor, NPN, 100V, 6A, 3W, SOT-223, SMD DIODES INC. FZT853 is a 100V NPN silicon planar high current (high performance) transistor in a 4-pin SOT223 package. • Extremely low equivalent on-resistance RCE(sat) 44mohm at 5A • 6A continuous current, up to 10A peak current • Very low saturation voltages • Excell...
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NPN | - | 100V | 6A | 6A | 3W | SOT-223 | Surface Mount | 4Pins | 130MHz | 100hFE | 200hFE | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC817
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SC16033 |
Bipolar (BJT) Single Transistor, NPN, 45V, 500mA, 300mW, SOT-23, SMD MULTICOMP PRO The BC817 is a NPN Transistor for use in switching and general purpose medium power amplifier. • Complement to BC 807 • High Collector Current • High Current Gain • Multicomp Pro products are rated 4.6 out of 5 stars • 12 month limited warranty *view Terms...
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NPN | - | 45V | 500mA | 500mA | 300mW | SOT-23 | Surface Mount | 3Pins | 170MHz | 100hFE | 100hFE | 150°C | Multicomp Pro Bipolar Transistors | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BCX56-16,115
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SC16020 |
Bipolar (BJT) Single Transistor, NPN, 80V, 1A, 500mW, SOT-89, SMD NEXPERIA The BCX56 series 1A NPN Medium Power Transistor in a very small leadless surface-mount plastic package. • High current • Three current gain selections • High power dissipation capability • Exposed heat-sink for excellent thermal and electrical conductivity...
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NPN | - | 80V | 1A | 1A | 500mW | SOT-89 | Surface Mount | 3Pins | 180MHz | 100hFE | 100hFE | 150°C | BCX56 | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||