Single Bipolar Junction Transistors - BJT
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| Manufacturer Part No | Order Code | Description / Manufacturer | Availability | Price For |
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Quantity | Transistor Polarity | Collector Emitter Voltage V(br)ceo | Collector Emitter Voltage Max | DC Collector Current | Continuous Collector Current | Power Dissipation | Transistor Case Style | Transistor Mounting | No. of Pins | Transition Frequency | DC Current Gain hFE Min | DC Current Gain hFE | Operating Temperature Max | Product Range | Qualification | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MMBT3906-7-F
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SC16087 |
Bipolar (BJT) Single Transistor, PNP, -40V, -200mA, 300mW, SOT-23, SMD DIODES INC. The MMBT3906-7-F is a -40V PNP Small Signal Transistor with matte tin-plated leads. The terminals can solderable as per MIL-STD-202, method 208. The case is made of molded plastic, "Green" molding compound (UL94V-0). Complementary NPN type transistor is MM...
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PNP | 40V | 40V | 200mA | 200mA | 310mW | SOT-23 | Surface Mount | 3Pins | 250MHz | 100hFE | 30hFE | 150°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC847BLT1G
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SC16045 |
Bipolar (BJT) Single Transistor, General Purpose, NPN, 45V, 100mA, 300mW, SOT-23, SMD ONSEMI The BC847BLT1G is a NPN silicon general purpose Bipolar Transistor, designed for use in linear and switching applications. • Inductive load protection • Steering logic • Polarity reversal protection • ESD rating - Human body model of <gt/>4000V • ESD ratin...
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NPN | - | 45V | 100mA | 100mA | 300mW | SOT-23 | Surface Mount | 3Pins | 100MHz | 450hFE | 450hFE | 150°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BSR14
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SC16031 |
Bipolar (BJT) Single Transistor, NPN, 40V, 800mA, 350mW, SOT-23, SMD ONSEMI The BSR14 is a NPN general purpose Bipolar Transistor designed for use as a medium power amplifier and switch requiring collector currents up to 500mA. • Sourced from Process 19 • -55 to 150°C Operating junction temperature range
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NPN | - | 40V | 800mA | 800mA | 350mW | SOT-23 | Surface Mount | 3Pins | 300MHz | 300hFE | 300hFE | 150°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BC547CBU
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SC15784 |
Bipolar (BJT) Single Transistor, NPN, 45V, 100mA, 500mW, TO-92 ONSEMI The BC547CBU is a NPN epitaxial silicon Bipolar Transistor suitable for switching and amplifier applications. • Complement to BC557
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NPN | - | 45V | - | 100mA | 500mW | TO-92 | Through Hole | 3Pins | 300MHz | 420hFE | - | 150°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BC807,215
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SC16022 |
Bipolar (BJT) Single Transistor, PNP, -45V, -500mA, 250mW, SOT-23 NEXPERIA The BC807,215 is a PNP General-purpose Transistor with 3 leads, high current and low voltage, plastic surface mount package. Designed for switching and amplification applications. • 5pF Collector capacitance
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PNP | 45V | 45V | 500mA | 500mA | 250mW | SOT-23 | Surface Mount | 3Pins | 80MHz | 100hFE | 100hFE | 150°C | BC807 | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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2N1893
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SC15753 |
Bipolar (BJT) Single Transistor, NPN, 80V, 500mA, 800mW, TO-39 MULTICOMP PRO The 2N1893 is a 80V Bipolar (BJT) Silicon NPN Transistor designed primarily for amplifier and switching applications. • High breakdown voltage • Low leakage current • Low capacity • Beta useful over an extremely wide current range • Multicomp Pro products ...
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NPN | - | 80V | - | 500mA | 800mW | TO-39 | Through Hole | 3Pins | 50MHz | 20hFE | - | 200°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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FMMT493
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SC16073 |
Bipolar (BJT) Single Transistor, NPN, 100V, 1A, 500mW, SOT-23, SMD DIODES INC. FMMT493 is a 100V, 2A NPN silicon planar medium power transistor in a 3-pin SOT-23 package. • Transition frequency of 150MHz • Power dissipation (Pd) of 500mW • Continuous collector current of 1A • Operating temperature range from -55°C to 150°C
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NPN | - | 100V | 1A | 1A | 500mW | SOT-23 | Surface Mount | 3Pins | 150MHz | 100hFE | 100hFE | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC858CLT1G
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SC16068 |
Bipolar (BJT) Single Transistor, General Purpose, PNP, 30V, 100mA, 225mW, SOT-23, SMD ONSEMI The BC858CLT1G is a PNP general purpose Bipolar Transistor is designed for use in linear and switching applications. The device is housed in the package which is designed for lower power surface-mount applications. • AEC-Q101 qualified and PPAP capable
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PNP | 30V | 30V | 100mA | 100mA | 225mW | SOT-23 | Surface Mount | 3Pins | 100MHz | 100hFE | 100hFE | 150°C | BCxxx | AEC-Q101 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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FZT953
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SC16103 |
Bipolar (BJT) Single Transistor, PNP, 100V, -5A, 3W, SOT-223, SMD DIODES INC. The FZT953 is a -100V PNP Complementary Medium Power High Current Transistor with matte tin plated leads solderable as per MIL-STD-202 standard, method 208. • High continuous collector current • Low saturation voltages • hFE specified up to -10A for a high...
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PNP | - | 100V | 5A | 5A | 3W | SOT-223 | Surface Mount | 4Pins | 125MHz | 200hFE | 200hFE | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BCX55-16,115
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SC16066 |
Bipolar (BJT) Single Transistor, NPN, 60V, 1A, 500mW, SOT-89, SMD NEXPERIA The BCX55 series 1A NPN Medium Power Transistor in a very small leadless surface-mount plastic package. • High current • Three current gain selections • High power dissipation capability • Exposed heat-sink for excellent thermal and electrical conductivity...
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NPN | - | 60V | 1A | 1A | 500mW | SOT-89 | Surface Mount | 3Pins | 180MHz | 100hFE | 100hFE | 150°C | BCX55 | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC33725BU
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SC15780 |
Transistor, Bipolar, NPN, 45V, 800mA, 625mW, TO92-3 ONSEMI The BC33725BU is a NPN Epitaxial Silicon Transistor suitable for AF-driver stages, low-power output stages, switching and amplifier applications. • Complement to BC327
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NPN | - | 45V | - | 800mA | 625mW | TO-92 | Through Hole | 3Pins | 100MHz | 100hFE | - | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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FMMT718
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SC16023 |
Bipolar (BJT) Single Transistor, PNP, 20V, -1.5A, 625mW, SOT-23, SMD DIODES INC. The FMMT718 is a PNP silicon power switching Bipolar Transistor offers 625mW power dissipation and extremely low saturation voltage. • 10A Peak pulse current • Excellent hFE characteristics up to 10A • Exhibits extremely low equivalent on resistance • NPN ...
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PNP | - | 20V | 1.5A | 1.5A | 625mW | SOT-23 | Surface Mount | 3Pins | 180MHz | 475hFE | 475hFE | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC846B,215
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SC16007 |
Bipolar (BJT) Single Transistor, NPN, 65V, 100mA, 250mW, SOT-23, SMD NEXPERIA BC846B,215 is a 65V, 100mA NPN general purpose transistor in a SOT23 package. Suitable for general-purpose switching and amplification. • SMD plastic package • 250mW power dissipation • Ambient temperature range from -65°C to 150°C
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NPN | - | 65V | 100mA | 100mA | 250mW | SOT-23 | Surface Mount | 3Pins | 100MHz | 200hFE | 200hFE | 150°C | BC846 Series | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC847BLT3G
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SC16032 |
Bipolar (BJT) Single Transistor, NPN, 45V, 100mA, 225mW, SOT-23, SMD ONSEMI • Transistor Polarity : NPN • Collector Emitter Voltage Max : 45V • DC Collector Current : 100mA • Continuous Collector Current : 100mA • Power Dissipation : 225mW • Transistor Case Style : SOT-23 • Transistor Mounting : Surface Mount • No. of Pins : 3Pins • Transition Frequency : 100MHz • DC Current Gain hFE Min : 200hFE • DC Current Gain hFE : 200hFE • Operating Temperature Max : 150°C • Qualification : AEC-Q101
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NPN | - | 45V | 100mA | 100mA | 225mW | SOT-23 | Surface Mount | 3Pins | 100MHz | 200hFE | 200hFE | 150°C | - | AEC-Q101 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MJD44H11G
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SC16077 |
Bipolar (BJT) Single Transistor, Audio, NPN, 80V, 8A, 20W, TO-252 (DPAK), SMD ONSEMI The MJD44H11G is a bipolar Power Transistor, designed for general purpose power and switching output or driver stages in applications such as switching regulators, converters and power amplifiers. • Lead formed for surface mount application in plastic slee...
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NPN | - | 80V | 8A | 8A | 20W | TO-252 (DPAK) | Surface Mount | 3Pins | 85MHz | 60hFE | 60hFE | 150°C | - | AEC-Q101 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BCP56-16,115
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SC16109 |
Bipolar (BJT) Single Transistor, NPN, 80V, 1A, 650mW, SOT-223, SMD NEXPERIA The BCP56 series 1A NPN Medium Power Transistor in a very small leadless surface-mount plastic package. • High current • Three current gain selections • High power dissipation capability • Exposed heat-sink for excellent thermal and electrical conductivity...
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NPN | - | 80V | 1A | 1A | 650mW | SOT-223 | Surface Mount | 4Pins | 180MHz | 100hFE | 100hFE | 150°C | BCP56 | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC856B,215
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SC16009 |
Bipolar (BJT) Single Transistor, PNP, -65V, -100mA, 250mW, SOT-23 NEXPERIA The BC856B,215 is a PNP Transistor in SMD plastic package with low current and voltage. Used for general purpose switching and amplification. • Complement to BC847
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PNP | 65V | 65V | 100mA | 100mA | 250mW | SOT-23 | Surface Mount | 3Pins | 100MHz | 220hFE | 220hFE | 150°C | BC856 | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MMBT2222A-7-F
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SC16034 |
Bipolar (BJT) Single Transistor, NPN, 40V, 600mA, 300mW, SOT-23, SMD DIODES INC. MMBT2222A-7-F is a 40V NPN small signal transistor with matte tin-plated terminals. The terminals can solderable as per MIL-STD-202, method 208. The case is made of moulded plastic, "Green" moulding compound (UL94V-0). The transistor is ideal for low-power...
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NPN | - | 40V | 600mA | 600mA | 310mW | SOT-23 | Surface Mount | 3Pins | 300MHz | 100hFE | 100hFE | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MJE3055T
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SC15821 |
Bipolar (BJT) Single Transistor, NPN, 60V, 10A, 75W, TO-220 STMICROELECTRONICS The MJE3055T is a 60V Silicon Epitaxial Base NPN Power Transistor intended for power switching circuits and general purpose amplifiers. Fast switching times and very low saturation voltage resulting in reduced switching and conduction losses. • Complementa...
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NPN | - | 60V | - | 10A | 75W | TO-220 | Through Hole | 3Pins | 2MHz | 400hFE | - | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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TIP32CG
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SC15738 |
Bipolar (BJT) Single Transistor, General Purpose, PNP, 100V, 3A, 40W, TO-220AB ONSEMI The TIP32CG is a bipolar PNP Power Transistor designed for use in general purpose amplifier and switching applications. • Complementary device
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PNP | - | 100V | - | 3A | 40W | TO-220AB | Through Hole | 3Pins | 3MHz | 10hFE | - | 150°C | TIPxxx | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MMBT3904LT1G
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SC15980 |
Bipolar (BJT) Single Transistor, General Purpose, NPN, 40V, 200mA, 225mW, SOT-23, SMD ONSEMI MMBT3904LT1G is a NPN silicon, surface mount, general purpose transistor. • Collector-emitter breakdown voltage is 40VDC min (TA = 25°C, IC = 1.0mAdc, IB = 0) • Collector-base breakdown voltage is 60VDC min (IC = 0.1µmAdc, IE = 0, TA = 25°C) • Emitter-base...
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NPN | - | 40V | 200mA | 200mA | 225mW | SOT-23 | Surface Mount | 3Pins | 300MHz | 300hFE | 300hFE | 150°C | MMBTxxxx | AEC-Q101 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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PMBTA45,215
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SC16055 |
Bipolar (BJT) Single Transistor, NPN, 500V, 150mA, 300mW, SOT-23, SMD NEXPERIA The PMBTA45 is a 500V NPN low VCEsat Breakthrough In Small Signal (BISS) Transistor with very low collector-emitter saturation voltage and high efficiency due to less heat generation. Suitable for use in electronic ballasts, LED driver for LED chain module...
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NPN | - | 500V | 150mA | 150mA | 300mW | SOT-23 | Surface Mount | 3Pins | 35MHz | 50hFE | 100hFE | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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TTC5200
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SC15763 |
Bipolar (BJT) Single Transistor, NPN, 230V, 15A, 150W, TO-3P TOSHIBA The TTC5200 from Toshiba is a through hole NPN silicon transistor in TO-3P package with high collector voltage. This device is commonly used for power amplification. • Collector to emitter voltage (Vce) is 230V • Collector to base voltage of 230V • Collect...
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NPN | - | 230V | - | 15A | 150W | TO-3PL | Through Hole | 3Pins | 30MHz | 80hFE | - | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MMBT2907A-7-F
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SC16060 |
Bipolar (BJT) Single Transistor, PNP, 60V, 600mA, 300mW, SOT-23, SMD DIODES INC. The MMBT2907A-7-F is a PNP small signal Bipolar Transistor offers -600mA collector current and -60V collector-base voltage. It is ideal for low power amplification and switching. • UL94V-0 Flammability rating • Epitaxial planar die construction • MMBT2222A...
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PNP | 60V | 60V | 600mA | 600mA | 310mW | SOT-23 | Surface Mount | 3Pins | 200MHz | 100hFE | 100hFE | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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2N5416
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SC15811 |
Bipolar (BJT) Single Transistor, PNP, -300V, -1A, 1W, TO-39 MULTICOMP PRO The 2N5416 is a -300V Silicon PNP High Voltage Transistor ideal for high speed switching and linear amplifier appliances in military, industrial and commercial equipment. • Collector-base voltage(Vcbo = 350V) • Emitter-base voltage(Vebo = 6V) • Multicomp P...
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PNP | - | 300V | - | 1A | 1W | TO-39 | Through Hole | 3Pins | 15MHz | 30hFE | - | 200°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||