Darlington Transistors
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| Manufacturer Part No | Order Code | Description / Manufacturer | Availability | Price For |
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Quantity | Transistor Polarity | Collector Emitter Voltage V(br)ceo | No. of Outputs | Power Dissipation Pd | DC Collector Current | RF Transistor Case | Transistor Case Style | No. of Pins | DC Current Gain hFE | Transition Frequency | Transistor Mounting | Operating Temperature Max | Product Range | Qualification | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BCV26
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SC06604 |
Transistor, PNP SOT23 ONSEMI The BCV26 is a PNP Darlington Transistor designed for applications requiring extremely high current gain at currents to 800mA. • Sourced from Process 61 • -55 to 150°C Operating junction temperature range
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PNP | 30V | - | 350mW | 1.2A | SOT-23 | - | 3Pins | 10000hFE | - | Surface Mount | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MJ11033
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SC06898 |
Darlington Transistor, TO3 MULTICOMP PRO The MJ11033 is a -120V Silicon PNP Complementary Darlington Power Transistor designed for use as output devices in complementary general purpose amplifier applications. • High DC current gain • Monolithic construction with built-in base-emitter shunt resis...
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PNP | - | - | - | - | - | - | 2Pins | - | - | Through Hole | 200°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BD677
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SC09211 |
Darlington Transistor, TO126 MULTICOMP PRO The BD677 is a NPN power Darlington Transistor with 60V collector base voltage and 5V emitter base voltage. • -55 to 150°C Operating junction temperature range • Multicomp Pro products are rated 4.6 out of 5 stars • 12 month limited warranty *view Terms & ...
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NPN | 60V | - | 40W | 4A | SOT-32 | - | 3Pins | 750hFE | - | Through Hole | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BDX53CG
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SC06855 |
Darlington Transistor, TO220 ONSEMI The BDX53CG is a NPN bipolar medium-power Darlington Transistor designed for general purpose and low speed switching applications. • Complementary device • Monolithic construction with built-in base emitter shunt resistors
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NPN | 100V | - | 65W | 8A | TO-220 | - | 3Pins | 750hFE | - | Through Hole | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TIP147
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SC08147 |
Darlington Transistor, TO247 MULTICOMP PRO The TIP147 is a -100V PNP Darlington Transistor designed for general purpose amplifier and low speed switching applications. • Monolithic construction with built-in base-emitter shunt resistors • Collector-emitter sustaining voltage (Vceo (sus) = 100V mini...
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PNP | 100V | - | 125W | 10A | TO-247 | - | 3Pins | 1000hFE | - | Through Hole | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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ULN2804A
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SC08608 |
Darlington Array 8 NPN, 2804, DIP18 STMICROELECTRONICS The ULN2804A from STMicroelectronics is a through hole eight darlington array in DIP package. Array contains eight darlington transistors with common emitters and integral suppression diodes for inductive loads. Each darlington features peak load current r...
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NPN | 50V | - | 2.25W | 500mA | DIP | - | 18Pins | 1000hFE | - | Through Hole | 85°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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TIP120
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SC11000 |
Darlington Transistor, TO220 MULTICOMP PRO The TIP120 from Multicomp Pro are through hole, darlington transistor in TO-220 package. This transistor is used for low speed switching and amplification. • Collector emitter voltage (Vce) of 60V • Continuous collector current (Ic) of 5A • Power dissipati...
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NPN | 60V | - | 65W | 5A | TO-220 | - | 3Pins | 1000hFE | - | Through Hole | 150°C | Multicomp Pro Bipolar Transistor | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BDX53C
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SC10998 |
Darlington Transistor, TO220 STMICROELECTRONICS The BDX53C from STMicroelectronics is a through hole complementary power darlington transistor in TO-220 package. This device manufactured in planar base island technology with monolithic darlington configuration. This transistor features good DC gain and ...
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NPN | 100V | - | 60W | 8A | TO-220 | - | 3Pins | 750hFE | - | Through Hole | 150°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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ZTX603
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SC10995 |
Darlington Transistor, E-Line DIODES INC. The ZTX603 is a 80V E-Line Silicon NPN Planar Medium Power Darlington Transistor with silicone encapsulate that is rated to a much higher temperature than the common epoxies. It feature allows higher temperature operation, higher power rating and much high...
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NPN | 80V | - | 1W | 1A | TO-92 | - | 3Pins | 2000hFE | - | Through Hole | 200°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BD680
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SC06882 |
Darlington Transistor, TO126 STMICROELECTRONICS The BD680 is a PNP complementary power Darlington Transistor manufactured in Planar Base Island technology. It offers monolithic Darlington configuration with integrated anti-parallel collector-emitter diode. • Good hFE linearity • High fT frequency
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PNP | 80V | - | 40W | 4A | SOT-32 | - | 3Pins | 750hFE | - | Through Hole | 150°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BDV66B
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SC06868 |
Darlington Transistor, TO247 MULTICOMP PRO The BDV66B is a -100V Silicon PNP Complementary Darlington Power Transistor having monolithic construction with built-in base-emitter shunt resistor. • Collector-emitter sustaining voltage (Vceo (sus) = 100V minimum) • Collector-emitter saturation voltage(...
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PNP | 100V | - | 125W | 16A | TO-247 | - | 3Pins | - | - | Through Hole | 150°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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TIP122
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SC15813 |
Bipolar (BJT) Single Transistor, Darlington, NPN, 100V, 5A, 65W, TO-220 MULTICOMP PRO The TIP122 is a high-performance, Darlington transistor designed to handle high currents and voltages, making it an ideal choice for demanding applications such as audio amplifiers, power supplies, and switching circuits. With its high current handling cap...
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NPN | 100V | - | 65W | 5A | TO-220 | - | 3Pins | 1000hFE | - | Through Hole | 150°C | Multicomp Pro Darlington NPN Transistors | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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TIP150
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SC15740 |
Bipolar (BJT) Single Transistor, Darlington, NPN, 300V, 7A, 80W, TO-220 MULTICOMP PRO The TIP150 is a NPN Darlington Power Transistor with 300V collector-emitter voltage and 80W power dissipation. • Collector-emitter sustaining voltage (Vceo (sus) = 30V minimum) • Collector-emitter saturation voltage(Vce (sat) = 2V maximum at Ic = 5A) • Mul...
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NPN | 300V | - | 80W | 7A | TO-220 | - | 3Pins | 150hFE | - | Through Hole | 150°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC517-D74Z
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SC15804 |
Bipolar (BJT) Single Transistor, NPN, 30V, 1.2A, 625mW, TO-92 ONSEMI • Transistor Polarity : NPN • Collector Emitter Voltage V(br)ceo : 30V • Power Dissipation Pd : 625mW • DC Collector Current : 1.2A • RF Transistor Case : TO-92 • No. of Pins : 3Pins • DC Current Gain hFE : 30000hFE • Transistor Mounting : Through Hole • Operating Temperature Max : 150°C
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NPN | 30V | - | 625mW | 1.2A | TO-92 | - | 3Pins | 30000hFE | - | Through Hole | 150°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MJD122G
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SC16026 |
Bipolar (BJT) Single Transistor, NPN, 100V, 8A, 1.75W, TO-252 (DPAK), SMD ONSEMI The MJD122G is a 100V Silicon NPN Bipolar Complementary Darlington Power Transistor designed for general purpose amplifier and low speed switching applications. Thins transistor is surface mount replacements for 2N6040-2N6045 series, TIP120-TIP122 series a...
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NPN | 100V | - | 1.75W | 8A | TO-252 (DPAK) | TO-252 (DPAK) | 3Pins | 12hFE | - | Surface Mount | 150°C | - | AEC-Q101 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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ULN2004D1013TR
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SC16139 |
Bipolar Transistor Array, Darlington, NPN, 50V, 500mA, 1000hFE, SOIC STMICROELECTRONICS ULN2004D1013TR is a high-voltage, high-current Darlington array containing seven open collectors Darlington pairs with common emitters. Each channel is rated at 500mA and can withstand peak currents of 600mA. Suppression diodes are included for inductive l...
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NPN | 50V | - | - | 500mA | NSOIC | - | 16Pins | 1000hFE | - | Surface Mount | 85°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MJD122T4G
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SC16081 |
Bipolar (BJT) Single Transistor, Darlington, NPN, 100V, 8A, 20W, TO-252 (DPAK), SMD ONSEMI The MJD122T4G is a 8A NPN bipolar power Darlington Transistor designed for general purpose amplifier and low speed switching applications. It is the surface-mount replacement for 2N6040 to 2N6045 series, TIP120 to TIP122 series and TIP125 to TIP127 series....
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NPN | 100V | - | 20W | 8A | TO-252 (DPAK) | TO-252 (DPAK) | 3Pins | 1000hFE | 4MHz | Surface Mount | 150°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BCV47,215
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SC16011 |
Bipolar (BJT) Single Transistor, NPN, 60V, 500mA, 250mW, SOT-23, SMD NEXPERIA The BCV47 is a NPN Darlington Transistor with medium current and low voltage, high DC current gain. Used in preamplifier input stages. • Complement to BCV46
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NPN | 60V | - | 250mW | 500mA | SOT-23 | SOT-23 | 3Pins | 2000hFE | 220MHz | Surface Mount | 150°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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2N6284G
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SC15801 |
Bipolar (BJT) Single Transistor, NPN, 100V, 20A, 160W, TO-3 ONSEMI The 2N6284G is a NPN Darlington bipolar Power Transistor with monolithic construction, built-in base-emitter shunt resistors, designed for general-purpose amplifier and low-frequency switching applications. • High DC current gain • 1.09°C/W Junction-to-cas...
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NPN | 100V | - | 160W | 20A | TO-3 | - | 2Pins | 100hFE | - | Through Hole | 200°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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ULN2003A
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SC16583 |
Darlington Array 7 NPN, 2003, DIP16 STMICROELECTRONICS ULN2003A is a high-voltage, high-current darlington array containing seven open collector darlington pairs with common emitters. Each channel is rated at 500mA and can withstand peak currents of 600mA. Suppression diodes are included for inductive load dri...
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NPN | 50V | 7Outputs | - | 500mA | DIP | - | 16Pins | 1000hFE | - | Through Hole | 85°C | Darlington Array | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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ULN2004A
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SC16584 |
7 Darlington Array Transistor, NPN, 50V, 500mA, DIP16 STMICROELECTRONICS High-voltage, high-current darlington arrays each contains seven open collector darlington pairs with common emitters. Suitable for relay drivers, stepper and DC brushed motor drivers, lamp drivers, display drivers (LED and gas discharge), line drivers and...
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NPN | 50V | 7Outputs | - | 500mA | DIP | - | 16Pins | 1000hFE | - | Through Hole | 85°C | ULN2001; ULN2002; ULN2003; ULN2004 | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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FZT705
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SC16115 |
Bipolar (BJT) Single Transistor, Darlington, PNP, 120V, -2A, 2W, SOT-223, SMD DIODES INC. The FZT705 is a -120V Silicon PNP Planar Medium Power Darlington Transistor with 2W power dissipation. • Guaranteed hFE specified up to 2A • Surface mount transistor
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PNP | 120V | - | 2W | 2A | SOT-223 | SOT-223 | 3Pins | 3000hFE | 160MHz | Surface Mount | 150°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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FZT605
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SC16092 |
Bipolar (BJT) Single Transistor, Darlington, NPN, 120V, 1.5A, 2W, SOT-223, SMD DIODES INC. Silicon NPN Darlington transistor with matte tin plated leads solderable as per MIL-STD-202 standard, method 208. • Transistor is ideal for use in lamp, relay and solenoid driving • UL flammability rating 94V-0 • Qualified to AEC-Q101 Standards for High Re...
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NPN | 120V | - | 2W | 1.5A | SOT-223 | SOT-223 | 3Pins | 5000hFE | 150MHz | Surface Mount | 150°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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ULN2003AIN
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SC18105 |
High-Voltage, High-Current Darlington Transistor Arrays, Bipolar, NPN, 50V, 500mA, DIP TEXAS INSTRUMENTS High-voltage, high-current darlington arrays each contains seven open collector darlington pairs with common emitters. Suitable for relay drivers, stepper and DC brushed motor drivers, lamp drivers, display drivers (LED and gas discharge), line drivers and...
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NPN | 50V | - | - | 500mA | DIP | - | 16Pins | - | - | Through Hole | 105°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BCV27,215
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SC21411 |
Darlington Transistor, Dual NPN, 30 V, 250 mW, 500 mA, SOT-23, 3 Pins NEXPERIA • Transistor Polarity : Dual NPN • Collector Emitter Voltage V(br)ceo : 30V • Power Dissipation Pd : 250mW • DC Collector Current : 500mA • RF Transistor Case : SOT-23 • No. of Pins : 3Pins • DC Current Gain hFE : 4000hFE • Transistor Mounting : Surface Mount • Operating Temperature Max : 150°C
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Dual NPN | 30V | - | 250mW | 500mA | SOT-23 | - | 3Pins | 4000hFE | - | Surface Mount | 150°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||