Darlington Transistors
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Manufacturer Part No | Order Code | Description / Manufacturer | Availability | Price For |
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Quantity | Transistor Polarity | Collector Emitter Voltage V(br)ceo | No. of Outputs | Power Dissipation Pd | DC Collector Current | RF Transistor Case | Transistor Case Style | No. of Pins | DC Current Gain hFE | Transition Frequency | Transistor Mounting | Operating Temperature Max | Product Range | Qualification | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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TIP120G
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SC15979 |
Bipolar (BJT) Single Transistor, NPN, 60V, 5A, 65W, TO-220 ONSEMI The TIP120G is a NPN Darlington bipolar Power Transistor, designed for general purpose amplifier and low-speed switching applications. • High DC current gain • Monolithic construction with built-in base-emitter shunt resistor
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NPN | 60V | - | 65W | 5A | TO-220 | TO-220 | 3Pins | 1000hFE | - | Through Hole | 150°C | - | AEC-Q101 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TIP141
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SC06870 |
Darlington Transistor, TO247 MULTICOMP PRO The TIP141 is a Darlington Transistor, designed for use in general-purpose amplifier and low speed switching applications. Collector-emitter sustaining voltage at 80V and power dissipation at 125W. • Monolithic construction with built-in base-emitter shunt...
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1+ €1.7017 (€2.09) 10+ €1.5708 (€1.93) 100+ €1.428 (€1.76) 500+ €1.2733 (€1.57) |
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NPN | 80V | - | 125W | 10A | TO-247 | - | 3Pins | 1000hFE | - | Through Hole | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
ULN2803A
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SC08607 |
Darlington Array 8 NPN, 2803, DIP18 STMICROELECTRONICS The ULN2803A is an eight darlington array in 18 pin DIP package. Array contains eight darlington transistors with common emitters and integral suppression diodes for inductive loads. Each darlington features a peak load current rating of 600mA (500mA conti...
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1+ €2.3562 (€2.90) 10+ €2.1182 (€2.61) |
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NPN | 50V | 8Outputs | 2.25W | 500mA | DIP | - | 18Pins | 1000hFE | - | Through Hole | 85°C | Darlington Array | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BCX38C
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SC06835 |
Darlington Transistor, E-Line DIODES INC. The BCX38C is a NPN silicon planar medium-power Darlington Transistor offers 80V collector-base voltage and 800mA continuous collector current. • -55 to 200°C Operating temperature range
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5+ €0.5712 (€0.70) 25+ €0.4998 (€0.61) 100+ €0.4403 (€0.54) |
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NPN | 60V | - | 1W | 800mA | TO-92 | - | 3Pins | 5000hFE | - | Through Hole | 200°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BDX34C
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SC10997 |
Darlington Transistor, TO220 STMICROELECTRONICS The BDX34C is a -100V Silicon Epitaxial Base PNP Power Transistor in monolithic Darlington configuration. It is intended for use in power linear and switching applications. Fast switching times and very low saturation voltage resulting in reduced switching...
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PNP | 100V | - | 70W | 10A | TO-220 | - | 3Pins | 750hFE | - | Through Hole | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BD682G
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SC06884 |
Darlington Transistor, TO126 ONSEMI The BD682G is a PNP medium-power Darlington Transistor can be used as output device in complementary general-purpose amplifier applications. • Monolithic construction • Complementary with BD681
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PNP | 100V | - | 40W | 4A | TO-225 | - | 3Pins | 750hFE | - | Through Hole | 150°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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ULN2002A
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SC08600 |
Darlington Array 7 NPN, 2002, DIP16 STMICROELECTRONICS High-voltage, high-current darlington arrays each contains seven open collector darlington pairs with common emitters. Suitable for relay drivers, stepper and DC brushed motor drivers, lamp drivers, display drivers (LED and gas discharge), line drivers and...
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NPN | 50V | - | - | 500mA | DIP | - | 16Pins | 1000hFE | - | Through Hole | 85°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BD679
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SC06880 |
Darlington Transistor, TO126 STMICROELECTRONICS The BD679 is a 60V Silicon NPN Complementary Power Darlington Transistor manufactured in planar base island technology with monolithic Darlington configuration. Monolithic Darlington configuration with integrated anti parallel collector-emitter diode. Fast...
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NPN | 80V | - | 40W | 4A | SOT-32 | - | 3Pins | 750hFE | - | Through Hole | 150°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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TIP142
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SC08145 |
Darlington Transistor, TO247 MULTICOMP PRO The TIP142 from Multicomp Pro are through hole, darlington transistor in TO-247(3P) package. This transistor is used for low speed switching and amplification. • Collector emitter voltage (Vce) of 100V • Continuous collector current (Ic) of 10A • Power dis...
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NPN | 100V | - | 125W | 10A | TO-247 | - | 3Pins | 1000hFE | - | Through Hole | 150°C | Multicomp Pro Darlington Transistors | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BCV27
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SC06621 |
Transistor, NPN SOT23 ONSEMI The BCV27 is a NPN Darlington Transistor designed for applications requiring extremely high current gain at currents to 1A. • Sourced from Process 05 • -55 to 150°C Operating junction temperature range
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NPN | - | - | - | - | - | - | 3Pins | 20000hFE | - | Surface Mount | 150°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MPSA14
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SC10647 |
Darlington Transistor, TO92 MULTICOMP PRO The MPSA14 is a NPN Darlington Transistor with 30V collector emitter voltage and 10V emitter base voltage. • -55 to 150°C Operating junction temperature range • Multicomp Pro products are rated 4.6 out of 5 stars • 12 month limited warranty *view Terms & C...
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NPN | 30V | - | 625mW | 1.2A | TO-92 | - | 3Pins | 20000hFE | - | Through Hole | 150°C | Multicomp Pro Bipolar Transistors NPN | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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TIP112
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SC06861 |
Darlington Transistor, TO220 STMICROELECTRONICS The TIP112 is a NPN complementary silicon epitaxial-base Power Transistor with monolithic Darlington configuration mounted in a JEDEC plastic package. It is intended for use in medium power linear and switching applications. • Integrated anti-parallel coll...
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NPN | 100V | - | 50W | 2A | TO-220 | - | 3Pins | 500hFE | - | Through Hole | 150°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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ZTX605
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SC06838 |
Darlington Transistor, E-Line DIODES INC. The ZTX605 is a 120V Silicon NPN Planar Medium Power Darlington Transistor with 1W power dissipation. • Gain of 2K at Ic = 1A
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5+ €0.9401 (€1.16) 25+ €0.8092 (€1.00) 100+ €0.5593 (€0.69) |
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NPN | 120V | - | 1W | 1A | TO-92 | - | 3Pins | 2000hFE | - | Through Hole | 200°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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ZTX705
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SC06840 |
Darlington Transistor, E-Line DIODES INC. The ZTX705 is a -120V E-Line Silicon PNP Planar Medium Power Darlington Transistor with silicone encapsulate that is rated to a much higher temperature than the common epoxies. It feature allows higher temperature operation, higher power rating and much hi...
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PNP | - | - | - | - | - | - | 3Pins | - | - | Through Hole | 200°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MJ11015G
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SC09920 |
Darlington Transistor, TO3 ONSEMI The MJ11015G from On Semiconductor is a through hole, 30A, 120V PNP darlington bipolar power transistor in TO-204AA(TO-3) package. Features high DC current gain and monolithic construction with built-in base emitter shunt resistor. It functions as an outpu...
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PNP | 120V | - | 200W | 30A | TO-3 | - | 2Pins | 1000hFE | - | Through Hole | 200°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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TIP102G
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SC06859 |
Darlington Transistor, TO220 ONSEMI The TIP102G is a 8A NPN bipolar power Darlington Transistor designed for general-purpose amplifier and low speed switching applications. • Complementary device • Monolithic construction with built-in base-emitter shunt resistors
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NPN | 100V | - | 80W | 8A | TO-220 | - | 3Pins | 200hFE | - | Through Hole | 150°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BU806
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SC06858 |
Darlington Transistor, TO220 MULTICOMP PRO The BU806 is a 200V NPN Darlington High Voltage Transistor for fast switching applications. • High current • Collector-emitter sustaining voltage (Vceo (sus) = 200V minimum) • Low collector-emitter saturation voltage • Multicomp Pro products are rated 4.6 ...
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NPN | 200V | - | 60W | 8A | TO-220 | - | 3Pins | 375hFE | - | Through Hole | 150°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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TIP120
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SC10999 |
Darlington Transistor, TO220 STMICROELECTRONICS The TIP120 from STMicroelectronics is a through hole complementary power darlington transistor in TO-220 package. This device manufactured in planar technology with “base island” layout and monolithic darlington configuration resulting in exceptional high ...
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NPN | 60V | - | 65W | 5A | TO-220 | - | 3Pins | 1000hFE | - | Through Hole | 150°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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TIP121
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SC06508 |
Power Transistor STMICROELECTRONICS The TIP121 is a complementary NPN Power Darlington Transistor with low collector-emitter saturation voltage. It is manufactured in planar technology with base island layout. The resulting transistor show exceptional high gain performance coupled with very ...
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NPN | 80V | - | 65W | 5A | TO-220 | - | 3Pins | 1000hFE | - | Through Hole | 150°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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ZTX614
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SC06839 |
Darlington Transistor, E-Line DIODES INC. The ZTX614 is a NPN silicon planar medium-power Darlington Transistor offers 800mA continuous collector current and 120V collector-base voltage. • Gain of 10K @ IC = 500mA • -55 to 200°C Operating temperature range
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NPN | 100V | - | 1W | 800mA | TO-92 | - | 3Pins | 10000hFE | - | Through Hole | 200°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BDX33C
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SC06854 |
Darlington Transistor, TO220 STMICROELECTRONICS The BDX33C is a NPN complementary silicon power Darlington Transistor with built-in epitaxial planar technology. Designed for use in power linear and switching applications. • Complement to BDX34C • 0.25A Base current
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NPN | 100V | - | 70W | 10A | TO-220 | - | 3Pins | 750hFE | - | Through Hole | 150°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MJ11016G
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SC06896 |
Darlington Transistor, TO3 ONSEMI The MJ11016G is a 120V Silicon NPN Bipolar Darlington Power Transistor designed for use as output devices in complementary general purpose amplifier applications. The transistor has monolithic construction with built-in base-emitter shunt resistor. • High ...
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NPN | 120V | - | 200W | 30A | TO-3 | - | 2Pins | 200hFE | - | Through Hole | 200°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BDV67B
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SC06869 |
Darlington Transistor, TO247 MULTICOMP PRO The BDV67B is a NPN Darlington Transistor designed in monolithic construction with built-in base-emitter shunt resistor. • -65 to 150°C Operating junction temperature range • Multicomp Pro products are rated 4.6 out of 5 stars • 12 month limited warranty *...
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NPN | 100V | - | 125W | 16A | TO-247 | - | 3Pins | - | - | Through Hole | 150°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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TIP127
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SC06864 |
Darlington Transistor, Darlington, PNP, 100 V, 65 W, 5 A, TO-220, 3 Pins STMICROELECTRONICS The TIP127 is a NPN-PNP complementary power Darlington Transistor manufactured in Planar technology with "Base Island" layout and monolithic Darlington configuration. The resulting transistors show exceptional high gain performance coupled with very low sa...
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PNP | 100V | - | 65W | 5A | TO-220 | - | 3Pins | 1000hFE | - | Through Hole | 150°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BU323ZG
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SC06875 |
Darlington Transistor, SOT93 ONSEMI The BU323ZG is a 350V Silicon NPN Bipolar Darlington Power Transistor with a built-in active Zener clamping circuit. The transistor is specifically designed for unclamped, inductive applications such as electronic ignition, switching regulators and motor c...
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NPN | - | - | - | - | - | - | 3Pins | - | - | Through Hole | 175°C | - | - |