IGBT Single Transistors
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Manufacturer Part No | Order Code | Description / Manufacturer | Availability | Price For |
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Quantity | Continuous Collector Current | Collector Emitter Saturation Voltage | Power Dissipation | Collector Emitter Voltage Max | Transistor Case Style | No. of Pins | Operating Temperature Max | Transistor Mounting | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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STGW30NC120HD
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SC09975 |
IGBT, 60 A, 2.75 V, 220 W, 1.2 kV, TO-247, 3 Pins STMICROELECTRONICS The STGW30NC120HD is a N-channel very fast PowerMESH™ IGBT for use with induction heating and soft switching application. Using the latest high voltage technology based on its patented strip layout, STMicroelectronics has designed an advanced family of IGB...
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1+ €4.6648 (€5.74) 25+ €3.9032 (€4.80) 100+ €3.1059 (€3.82) |
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60A | 2.75V | 220W | 1.2kV | TO-247 | 3Pins | 150°C | Through Hole | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IHW30N160R5XKSA1
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SC15923 |
IGBT Single Transistor, 60A, 1.85V, 263W, 1.6 kV, TO-247 INFINEON IHW30N160R5XKSA1 is a reverse-conducting IGBT with monolithic body diode. Applications include induction cooking and microwave ovens. • Collector-emitter voltage is 1600V, DC collector current is 39A(Tc = 100°C ) • Powerful monolithic body diode with low f...
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1+ €4.2364 (€5.21) 10+ €3.3558 (€4.13) 100+ €2.5585 (€3.15) |
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60A | 1.85V | 263W | 1.6kV | TO-247 | 3Pins | 175°C | Through Hole | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
FGA60N65SMD
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SC15921 |
IGBT Single Transistor, 120A, 1.9V, 600W, 650V, TO-3PN ONSEMI • Continuous Collector Current : 120A • Collector Emitter Saturation Voltage : 1.9V • Power Dissipation : 600W • Collector Emitter Voltage Max : 650V • Transistor Case Style : TO-3PN • No. of Pins : 3Pins • Operating Temperature Max : 175°C • Transistor Mounting : Through Hole
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1+ €3.3915 (€4.17) 10+ €2.6894 (€3.31) 100+ €2.5109 (€3.09) |
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120A | 1.9V | 600W | 650V | TO-3PN | 3Pins | 175°C | Through Hole | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IKW40N120H3FKSA1
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SC15918 |
IGBT Single Transistor, 40A, 2.4V, 483W, 1.2kV, TO-247 INFINEON The IKW40N120H3 is a 1200V Discrete IGBT with very soft, fast recovery anti-parallel diode designed specifically to replace planar MOSFETs in applications switching at frequencies below 70kHz. The key feature of this family is a MOSFET-like turn-off switch...
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1+ €7.5565 (€9.29) 10+ €6.4141 (€7.89) 100+ €4.8076 (€5.91) |
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40A | 2.4V | 483W | 1.2kV | TO-247 | 3Pins | 175°C | Through Hole | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
FGH30S130P
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SC15922 |
IGBT Single Transistor, 60A, 1.75V, 500W, 1.3 kV, TO-247 ONSEMI • Continuous Collector Current : 60A • Collector Emitter Saturation Voltage : 1.75V • Power Dissipation : 500W • Collector Emitter Voltage Max : 1.3kV • Transistor Case Style : TO-247 • No. of Pins : 3Pins • Operating Temperature Max : 175°C • Transistor Mounting : Through Hole
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1+ €4.8552 (€5.97) 10+ €3.7366 (€4.60) 100+ €2.9393 (€3.62) |
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60A | 1.75V | 500W | 1.3kV | TO-247 | 3Pins | 175°C | Through Hole | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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FGH60N60SMD
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SC15919 |
IGBT Single Transistor, 120A, 600V, 600W, TO-247AB, ONSEMI The FGH60N60SMD is a Field Stop IGBT with high current capability and low saturation voltage. • Fast switching • 175°C maximum junction temperature • Tighten parameter distribution • High input impedance • Positive temperature coefficient for easy parallel...
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1+ €6.0571 (€7.45) 10+ €3.9984 (€4.92) 100+ €3.4272 (€4.22) |
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120A | 1.9V | 600W | 600V | TO-247AB | 3Pins | 175°C | Through Hole |