MOSFET Transistors
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Manufacturer Part No | Order Code | Description / Manufacturer | Availability | Price For |
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Quantity | Channel Type | Drain Source Voltage Vds | Continuous Drain Current Id | Drain Source On State Resistance | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SQM40031EL_GE3
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SC16939 |
SMD P Channel Power MOSFET 40V, 120A, 0.0025 Ohm, TO-263 (D2PAK) VISHAY • TrenchFET® power MOSFET • Package with low thermal resistance • 100 % Rg and UIS tested • AEC-Q101 qualified
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P Channel | 40V | 120A | 0.0025ohm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRLML6346TRPBF
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SC16737 |
Power MOSFET, N Channel, 30 V, 3.4 A, 0.046 ohm, SOT-23, Surface Mount INFINEON The IRLML6346TRPBF is a HEXFET® single N-channel Power MOSFET for use with battery protection, DC switches, high side and low side load switch. It is compatible with existing surface-mount techniques. • Halogen-free • Consumer qualification MSL-1 (increase...
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N Channel | 30V | 3.4A | 0.046ohm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
FDS8447
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SC16894 |
Power MOSFET, N Channel, 40 V, 12.8 A, 0.009 ohm, SOIC, Surface Mount ONSEMI The FDS8447 is a single N-channel MOSFET produced using advanced PowerTrench® process. It has been especially tailored to minimize the ON-state resistance and yet maintain superior switching performance. • Low gate charge • High performance Trench technolo...
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N Channel | 40V | 12.8A | 0.009ohm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
STP8NK100Z
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SC16933 |
Power MOSFET, N Channel, 1 kV, 6.5 A, 1.85 ohm, TO-220, Through Hole STMICROELECTRONICS The STP8NK100Z is a 1000V N-channel Zener-protected Power MOSFET developed using SuperMESHâ„¢ technology, achieved through optimization of well established strip-based PowerMESHâ„¢ layout. In addition to pushing on-resistance significantly down, special care i...
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1+ €1.6184 (€1.99) 10+ €1.4637 (€1.80) 100+ €1.3209 (€1.62) |
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N Channel | 1kV | 6.5A | 1.85ohm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRF9530PBF
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SC17014 |
Power MOSFET, P Channel, 100 V, 12 A, 0.3 ohm, TO-220AB, Through Hole VISHAY The IRF9530PBF is a -100V P-channel Power MOSFET, third generation HEXFET® power MOSFET provides the designer with the best combination of fast switching, ruggedized device design and low on-resistance. The package is universally preferred for all commerci...
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1+ €0.8449 (€1.04) 10+ €0.595 (€0.73) 100+ €0.5593 (€0.69) |
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P Channel | 100V | 12A | 0.3ohm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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DMG2307L
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SC16771 |
Power MOSFET, Enhancement Mode, P Channel, 30 V, 4.6 A, 0.09 ohm, SOT-23, Surface Mount DIODES INC. The DMG2307L is a P-channel enhancement-mode MOSFET with moulded plastic case and solderable matte tin annealed over copper lead-frame terminals as per MIL-STD-202 standard. It is designed to minimize the ON-state resistance RDS (ON) and yet maintain super...
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P Channel | 30V | 4.6A | 0.09ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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PMV130ENEAR
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SC16922 |
SMD N Channel Power MOSFET FET Transistor, 40V, 2.1A, 0.095 Ohm, SOT-23 NEXPERIA The PMV130ENEAR from NEXPERIA is a N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. • Suitable applications: Relay driver, High-speed line driv...
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N Channel | 40V | 2.1A | 0.095ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRLML9303TRPBF
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SC16991 |
Power MOSFET, P Channel, 30 V, 2.3 A, 0.135 ohm, SOT-23, Surface Mount INFINEON The IRLML9303TRPBF is a HEXFET® single P-channel Power MOSFET offers industry standard pin-out for multi-vendor compatibility. It is suitable for load/system switch, DC switches and battery protection. It is compatible with existing surface-mount technique...
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P Channel | 30V | 2.3A | 0.135ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BS170-D75Z
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SC16845 |
Power MOSFET, N Channel, 60 V, 500 mA, 1.2 ohm, TO-226AA, Through Hole ONSEMI The BS170_D75Z is a N-channel enhancement-mode FET produced using high cell density DMOS technology. It is designed to minimize ON-state resistance while provide rugged, reliable and fast switching performance. It can be used in most applications requiring...
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N Channel | 60V | 500mA | 1.2ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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PMV40UN2R
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SC16783 |
Power MOSFET, N Channel, 30 V, 4.4 A, 0.036 ohm, SOT-23, Surface Mount NEXPERIA The PMV40UN2 is a N-channel enhancement-mode FET in a small surface-mount plastic package using Trench MOSFET technology. It is suitable for use in LED driver, low-side load-switch and switching circuit applications. • Low threshold voltage • Very fast swi...
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N Channel | 30V | 4.4A | 0.036ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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DMG6601LVT-7
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SC16804 |
Dual MOSFET, Complementary N and P Channel, 30V, 3.8A, 0.034 Ohm, TSOT-26, SMD DIODES INC. This MOSFET has been designed to minimize the on-state resistance and yet maintain superior switching performance, making it ideal for high efficiency power management applications. • Complementary MOSFET • Low On-Resistance • Low Input Capacitance • Fast ...
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Complementary N and P Channel | - | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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ZVN3306F
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SC16839 |
SMD N Channel Power MOSFET, Vertical DMOS FET, 60V, 150mA, 5 Ohm, SOT 23 DIODES INC. • Complement to ZVP3306F • AEC-Q101 Qualified • PPAP capable
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N Channel | 60V | 150mA | 5ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MMBF170LT1G
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SC16703 |
SMD N Channel Power MOSFET Transistor, N Channel, 60 V, 500 mA, 5 ohm, SOT-23, Surface Mount ONSEMI The MMBF170LT1G is a N-channel Power MOSFET with drain source voltage at 60VDC and drain current at 500mA. • AEC-Q101 Qualified • PPAP capable
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N Channel | 60V | 500mA | 5ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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STP80NF55-08
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SC16956 |
Power MOSFET, N Channel, 55 V, 80 A, 0.008 ohm, TO-220, Through Hole STMICROELECTRONICS The STP80NF55-08 from STMicroelectronics is a through hole, 55V N channel STripFET II power MOSFET in TO-220 package. This power MOSFET designed in unique Single Feature Size strip based process, resulting transistor shows extremely high packing density fo...
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N Channel | 55V | 80A | 0.008ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IXFN200N10P
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SC17024 |
MOSFET Transistor, PolarFET, N Channel, 200 A, 100 V, 0.0075 ohm, 15 V, 5 V IXYS SEMICONDUCTOR The IXFN200N10P is a N-channel enhancement mode Power MOSFET features miniBLOC with aluminium nitride isolation, low RDS (on) HDMOSTM process, rugged polysilicon gate cell structure and unclamped inductive switching (UIS) rated. • Fast intrinsic rectifier ...
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N Channel | 100V | 200A | 0.0075ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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FDP33N25
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SC16999 |
Power MOSFET, N Channel, 250 V, 33 A, 0.094 ohm, TO-220, Through Hole ONSEMI The FDP33N25 is an UniFETâ„¢ N-channel high voltage MOSFET produced based on planar stripe and DMOS technology. This MOSFET is tailored to reduce ON-state resistance, provide better switching performance and higher avalanche energy strength. It is suitable f...
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N Channel | 250V | 33A | 0.094ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRF710PBF
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SC16964 |
Power MOSFET, N Channel, 400 V, 1.5 A, 3.6 ohm, TO-220AB, Through Hole VISHAY The IRF710PBF is a 400V N-channel Power MOSFET, third generation power MOSFET provides the designer with the best combination of fast switching, ruggedized device design and low on-resistance. The package is universally preferred for all commercial-industr...
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N Channel | 400V | 1.5A | 3.6ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SI9945BDY-T1-GE3
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SC16801 |
Dual MOSFET, N Channel, 60V, 5.3A, 0.046 Ohm, SOIC, SMD VISHAY The SI9945BDY-T1-GE3 is a 60V Dual N-channel TrenchFET® Power MOSFET. Suitable for use in LCD TV CCFL inverter and load switch applications. The surface-mounted LITTLE FOOT® power MOSFET uses integrated circuit and small-signal packages which have been mod...
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N Channel | - | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SUM90P10-19L-E3
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SC16855 |
Power MOSFET, P Channel, 100 V, 90 A, 0.0156 ohm, TO-263 (D2PAK), Surface Mount VISHAY The SUM90P10-19L-E3 is a -100V P-channel TrenchFET® Power MOSFET.
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P Channel | 100V | 90A | 0.0156ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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FDV305N
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SC16822 |
Power MOSFET, N Channel, 20 V, 900 mA, 0.22 ohm, SOT-23, Surface Mount ONSEMI The FDV305N is a N-channel MOSFET uses high voltage PowerTrench® process. It has been optimized for load switch and battery protection applications. • Low gate charge • Fast switching speed • High performance Trench technology for extremely low RDS (ON)
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N Channel | 20V | 900mA | 0.22ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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2N7000-G
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SC16917 |
Power MOSFET, N Channel, 60 V, 200 mA, 5 ohm, TO-92, Through Hole MICROCHIP • 60V, 5ohm, N-channel, enhancement-mode, vertical DMOS FET • Free from secondary breakdown • Low power drive requirement • Ease of paralleling • Low CISS and fast switching speeds • Excellent thermal stability • Integral source-drain diode • High input i...
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N Channel | 60V | 200mA | 5ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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DMP2035U-7
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SC15959 |
Power MOSFET, P Channel, 20V, 3.6A, 0.023 Ohm, SOT-23, SMD DIODES INC. DMP2035U-7 is a P-channel enhancement mode MOSFET. • Low on-resistance, low input capacitance, fast switching speed • Low input/output leakage, ESD protected • Drain-source voltage is -20V at TA = +25°C • Gate-source voltage is ±10V at TA = +25°C • Continu...
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P Channel | 20V | 3.6A | 0.035ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRFP250MPBF
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SC16971 |
Power MOSFET, N Channel, 200 V, 30 A, 0.075 ohm, TO-247AC, Through Hole INFINEON • Single N-channel HEXFET® power MOSFET • Advanced process technology • Fast switching • Fully avalanche rated • Dynamic dv/dt rating • Ease of paralleling • Simple drive requirements • Planar cell structure for wide SOA • Product qualification according ...
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N Channel | 200V | 30A | 0.075ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRF7313TRPBF
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SC16809 |
Dual MOSFET, N Channel, 30V, 6.5A, 0.023 Ohm, SOIC, SMD INFINEON The IRF7313TRPBF is a dual N-channel MOSFET utilizes advanced processing techniques to achieve the lowest possible ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device. The HEXFET Power MOSFET is extreme...
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N Channel | - | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRF9540PBF
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SC16949 |
Power MOSFET, P Channel, 100 V, 19 A, 0.2 ohm, TO-220AB, Through Hole VISHAY The IRF9540PBF is a -100V P-channel Power MOSFET provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The low thermal resistance contributes to its wide acceptance throughout...
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P Channel | 100V | 19A | 0.2ohm |