MOSFET Transistors
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Manufacturer Part No | Order Code | Description / Manufacturer | Availability | Price For |
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Quantity | Channel Type | Drain Source Voltage Vds | Continuous Drain Current Id | Drain Source On State Resistance | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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STW20NM50FD
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SC11175 |
Power MOSFET, N Channel, 500 V, 20 A, 0.25 ohm, TO-247, Through Hole STMICROELECTRONICS The STW20NM50FD is a 500V N-channel FDmesh™ Power MOSFET with fast diode. The FDmesh™ associates all advantages of reduced on-resistance and fast switching with an intrinsic fast recovery body diode. It is therefore strongly recommended for bridge topologi...
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N Channel | 500V | 20A | 0.25ohm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
FDP5800
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SC16966 |
Power MOSFET, N Channel, 60 V, 80 A, 0.0046 ohm, TO-220, Through Hole ONSEMI The FDP5800 is a N-channel MOSFET produced using advanced PowerTrench® process. It has been tailored to minimize the ON-state resistance while maintaining superior switching performance. It is suitable for use in synchronous rectification, battery protecti...
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1+ €2.7727 (€3.41) 10+ €2.38 (€2.93) 100+ €1.7017 (€2.09) |
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N Channel | 60V | 80A | 0.0046ohm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
CSD19537Q3T
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SC16995 |
SMD N Channel Power MOSFET, 100V, 50A, 0.0121 Ohm, VSON TEXAS INSTRUMENTS • Channel Type : N Channel • Drain Source Voltage Vds : 100V • Continuous Drain Current Id : 50A • Drain Source On State Resistance : 0.0121ohm
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1+ €1.5113 (€1.86) 10+ €1.428 (€1.76) |
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N Channel | 100V | 50A | 0.0121ohm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BSS806NH6327XTSA1
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SC16851 |
Power MOSFET, N Channel, 20 V, 2.3 A, 0.041 ohm, SOT-23, Surface Mount INFINEON The BSS806N H6327 is a N-channel OptiMOS™2 enhancement-mode Small Signal Transistor offers 1.8V rated ultra logic level. • Halogen-free
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1+ €0.1547 (€0.19) 10+ €0.0952 (€0.12) 100+ €0.0833 (€0.10) |
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N Channel | 20V | 2.3A | 0.041ohm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BSS84DW-7-F
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SC16803 |
Dual MOSFET, P Channel, 50V, 130mA, 10 Ohm, SOT-363, SMD DIODES INC. The BSS84DW-7-F is a dual P-channel enhancement-mode MOSFET been designed to minimize the ON-state resistance RDS (ON) and yet maintain superior switching performance. It is ideal for general purpose interfacing switch and analogue switch applications. • L...
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1+ €0.2856 (€0.35) 10+ €0.1428 (€0.18) 100+ €0.119 (€0.15) |
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P Channel | - | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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ZXM61N02F
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SC16913 |
Power MOSFET, N Channel, 20 V, 1.7 A, 0.18 ohm, SOT-23, Surface Mount DIODES INC. The ZXM61N02F is an N-channel Enhancement Mode MOSFET utilizes an unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage applications. • Low on-resistance • Fast sw...
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1+ €0.2975 (€0.37) 10+ €0.1904 (€0.23) 100+ €0.1547 (€0.19) |
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N Channel | 20V | 1.7A | 0.18ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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ZXMP6A17E6TA
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SC16832 |
Power MOSFET, P Channel, 60 V, 3 A, 0.125 ohm, SOT-23, Surface Mount DIODES INC. The ZXMP6A17E6TA is a P-channel enhancement-mode MOSFET with moulded plastic case and solderable matte tin finish annealed over copper lead-frame terminals as per MIL-STD-202 standard. It is designed to minimize the ON-state resistance and yet maintain sup...
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P Channel | 60V | 3A | 0.125ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRFBC40APBF
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SC16969 |
Power MOSFET, N Channel, 600 V, 6.2 A, 1.2 ohm, TO-220AB, Through Hole VISHAY The IRFBC40APBF is a 600V N-channel enhancement-mode Power MOSFET with single configuration. It is suitable for SMPS, uninterruptible power supply and high speed power switching applications. • Low gate charge Qg results in simple drive requirement • Impro...
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1+ €1.3566 (€1.67) 10+ €1.0829 (€1.33) 100+ €0.8687 (€1.07) |
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N Channel | 600V | 6.2A | 1.2ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRLB4132PBF
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SC17012 |
Power MOSFET, N Channel, 30 V, 78 A, 0.0025 ohm, TO-220AB, Through Hole INFINEON HEXFET® Power MOSFET in TO-220AB package optimized for UPS/inverter applications. • Very low RDS(on) at 4.5V VGS • Ultra-low gate impedance • Fully characterized avalanche voltage and current
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1+ €0.7616 (€0.94) 10+ €0.4641 (€0.57) 100+ €0.4165 (€0.51) |
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N Channel | 30V | 78A | 0.0025ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SI2301CDS-T1-E3
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SC16887 |
Power MOSFET, P Channel, 20 V, 3.1 A, 0.11 ohm, SOT-23, Surface Mount VISHAY Si2301CDS-T1-E3 is a P-channel 20V (D-S) MOSFET. The applications include a load switch. • TrenchFET® Power MOSFET • Drain-source breakdown voltage is -20V min (VGS = 0V, ID = - 250µA, TJ = 25°C) • Gate-source threshold voltage range from -0.4 to 1V (VDS =...
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1+ €0.3808 (€0.47) 10+ €0.2618 (€0.32) 100+ €0.2023 (€0.25) |
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P Channel | 20V | 3.1A | 0.11ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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NTD20P06LT4G
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SC16990 |
Power MOSFET, P Channel, 60 V, 15.5 A, 0.143 ohm, TO-252 (DPAK), Surface Mount ONSEMI The NTD20P06LT4G is a -60V Single P-channel Power MOSFET designed for bridge circuits, power supplies and power motor controls as well as DC-DC conversion. The MOSFET withstands high energy in avalanche and commutation modes. • Low gate charge for fast swi...
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P Channel | 60V | 15.5A | 0.143ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SI7850DP-T1-E3
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SC16843 |
Power MOSFET, N Channel, 60 V, 10.3 A, 0.022 ohm, PowerPAK SO, Surface Mount VISHAY The SI7850DP-T1-E3 is a 60V N-channel fast switching TrenchFET® Power MOSFET with low thermal resistance and low 1.07mm profile. Suitable for secondary synchronous rectifier and primary side switch for 24VDC/DC applications. • ±20V Gate-source voltage • Ha...
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N Channel | 60V | 10.3A | 0.022ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BSS126H6327XTSA2
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SC16946 |
Power MOSFET, N Channel, 600 V, 21 mA, 280 ohm, SOT-23, Surface Mount INFINEON The BSS126 H6327 is a N-channel depletion-mode SIPMOS® Small-Signal-Transistor with 600VDS drain source voltage. Areas of application include power supply start-up power, overvoltage protection, in-rush-current limiter, off-line voltage reference. Also sui...
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1+ €0.2737 (€0.34) 10+ €0.1785 (€0.22) 100+ €0.1428 (€0.18) |
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N Channel | 600V | 21mA | 280ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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DMN6075S-7
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SC17019 |
SMD N Channel Power MOSFET, 60V, 2A, 0.069 Ohm, SOT-23 DIODES INC. This new generation MOSFET is designed to minimise the on-state resistance and yet maintain superior switching performance, making it ideal for high efficiency power management applications • Suitable for DC/DC converters, Power management functions and ba...
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N Channel | 60V | 2A | 0.085ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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CSD18504Q5A
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SC16683 |
SMD Power MOSFET N Channel NexFET Transistor, 40V, 50A, TEXAS INSTRUMENTS The CSD18504Q5A is a NexFET™ N-channel Power MOSFET designed to minimize losses in power conversion applications. It is suitable for use in DC-to-DC conversion, secondary side synchronous rectifier and battery motor control applications. • Ultra-low Qg and...
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N Channel | 40V | 50A | 0.0053ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SI2369DS-T1-GE3
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SC16757 |
Power MOSFET, P Channel, 30 V, 7.6 A, 0.024 ohm, SOT-23, Surface Mount VISHAY The SI2369DS-T1-GE3 is a P-Channel 30V Power MOSFET with ±20V gate source voltage. It works on Trench MOSFET® technology. • 100% Rg Tested • Halogen-free
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P Channel | 30V | 7.6A | 0.024ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IXFN180N15P
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SC17025 |
MOSFET Transistor, N Channel, 150 A, 150 V, 0.011 ohm, 10 V, 5 V IXYS SEMICONDUCTOR The IXFN180N15P is a 150V N-channel Enhancement Mode PolarHV™ Power MOSFET with fast intrinsic diode (HiPerFET™). The IXYS most popular power MOSFET (HiPerFET™) is for both hard switching and resonant mode applications. This MOSFET offers low gate charge a...
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1+ €18.6473 (€22.94) 3+ €16.422 (€20.20) 10+ €14.4347 (€17.75) |
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N Channel | 150V | 150A | 0.011ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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2N7002BK,215
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SC15984 |
Power MOSFET, N Channel, 60V, 350mA, 1 Ohm, SOT-23, SMD NEXPERIA The 2N7002BK is a N-channel enhancement mode Field-Effect Transistor (FET) in surface-mounted plastic package using Trench MOSFET technology. Suitable for high-speed line driver, low-side loadswitch and switching circuits. • Logic-level compatible • Very f...
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N Channel | 60V | 350mA | 1ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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HUF75344G3
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SC16989 |
Power MOSFET, N Channel, 55 V, 75 A, 0.0065 ohm, TO-247, Through Hole ONSEMI The HUF75344G3 is a N-channel UltraFET Power MOSFET. This advanced process technology achieves the lowest possible on resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mod...
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N Channel | 55V | 75A | 0.0065ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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FDN5630
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SC16780 |
Power MOSFET, N Channel, 60 V, 1.7 A, 0.1 ohm, SuperSOT, Surface Mount ONSEMI The FDN5630 is a 60V N-channel PowerTrench® MOSFET has been specially tailored to minimize the on-state resistance and to maintain low gate charge for superior switching performance. The latest medium voltage power MOSFET is optimized power switches combin...
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N Channel | 60V | 1.7A | 0.1ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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FQP17P10
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SC08207 |
Power MOSFET, P Channel, 100 V, 16.5 A, 0.19 ohm, TO-220, Through Hole ONSEMI The FQP17P10 is a QFET® P-channel enhancement-mode Power MOSFET produced using planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce ON-state resistance, provide superior switching performance and high av...
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P Channel | 100V | 16.5A | 0.19ohm |