MOSFET Transistors
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Manufacturer Part No | Order Code | Description / Manufacturer | Availability | Price For |
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Quantity | Channel Type | Drain Source Voltage Vds | Continuous Drain Current Id | Drain Source On State Resistance | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRLML2803TRPBF
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SC19133 |
SMD Power MOSFET, N Channel, 30V, 850mA, 0.3 Ohm, SOT-23 INFINEON The IRLML2803PBF is a N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance. Fifth generation HEXFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. ...
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N Channel | 30V | 850mA | 0.3ohm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
ZXMP6A17GTA
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SC19122 |
Power MOSFET, P Channel, 60 V, 4.3 A, 0.125 ohm, SOT-223, Surface Mount DIODES INC. The ZXMP6A17GTA is a P-channel Enhancement Mode MOSFET with matte tin annealed over copper lead frame terminals and UL94V-0 flame-rated moulded plastic case. Designed to minimize the on-state resistance and yet maintain superior switching performance, maki...
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P Channel | 60V | 4.3A | 0.125ohm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BSS8402DW-7-F
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SC21301 |
Dual MOSFET, Complementary N and P Channel, 60 V, 60 V, 115 mA, 115 mA, 13.5 Ohm DIODES INC. The BSS8402DW-7-F is a complementary pair Enhancement Mode MOSFET with matte tin finish annealed over Alloy 42 lead frame terminals and UL94V-0 flame-rated moulded plastic case. Designed to minimize the on-state resistance and yet maintain superior switchi...
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Complementary N and P Channel | - | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPD90P04P405ATMA2
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SC20574 |
Power Mosfet Transistor, P Channel, 40V, 90A, TO-252 (DPAK), SMD INFINEON IPD90P04P405ATMA2 is a OptiMOS®-P2 power-transistor in a 3 pin TO-252 package. • Continuous drain current is -90A • Power dissipation is 125W • P-channel - normal level - enhancement mode • AEC qualified • 175°C operating temperature • 100% avalanche teste...
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P Channel | 40V | 90A | 0.0047ohm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2N7002E-7-F
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SC21289 |
Power MOSFET, N Channel, 60 V, 250 mA, 1.6 ohm, SOT-23, Surface Mount DIODES INC. • Channel Type : N Channel • Drain Source Voltage Vds : 60V • Continuous Drain Current Id : 250mA • Drain Source On State Resistance : 1.6ohm
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N Channel | 60V | 250mA | 1.6ohm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRLL2705TRPBF
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SC21342 |
Power MOSFET, N Channel, 55 V, 3.8 A, 0.04 ohm, SOT-223, Surface Mount INFINEON The IRLL2705TRPBF is a HEXFET® fifth generation single N-channel Power MOSFET utilizes advanced processing techniques to achieve extremely low ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design,...
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N Channel | 55V | 3.8A | 0.04ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRLML2246TRPBF
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SC21343 |
Power MOSFET, P Channel, 20 V, 2.6 A, 0.09 ohm, SOT-23, Surface Mount INFINEON The IRLML2246TRPBF is a P-channel HEXFET® Power MOSFET for load/system switch. • Industry Standard Pinout • MSL1, Industrial Qualification • Multi-vendor Compatibility • Environmentally-friendly • Surface Mount
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P Channel | 20V | 2.6A | 0.09ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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T2N7002BK,LM(T
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SC21553 |
Power MOSFET, N Channel, 60 V, 400 mA, 1.05 ohm, SOT-23, Surface Mount TOSHIBA • Channel Type : N Channel • Drain Source Voltage Vds : 60V • Continuous Drain Current Id : 400mA • Drain Source On State Resistance : 1.05ohm
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N Channel | 60V | 400mA | 1.05ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BSS138L
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SC21473 |
Power MOSFET, Trench, N Channel, 50 V, 200 mA, 2.78 ohm, SOT-23, Surface Mount ONSEMI • Channel Type : N Channel • Drain Source Voltage Vds : 50V • Continuous Drain Current Id : 200mA • Drain Source On State Resistance : 2.78ohm
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N Channel | 50V | 200mA | 2.78ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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DMN10H220L-7
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SC21309 |
Power MOSFET, N Channel, 100 V, 1.4 A, 0.22 ohm, SOT-23, Surface Mount DIODES INC. DMN10H220L-7 is a N-channel enhancement mode MOSFET. This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power-management applications and loa...
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N Channel | 100V | 1.4A | 0.22ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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ZXMN3A01F
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SC21333 |
Power MOSFET, N Channel, 30 V, 2 A, 0.12 ohm, SOT-23, Surface Mount DIODES INC. The ZXMN3A01F is a N-channel enhancement-mode new generation TRENCH MOSFET from Zetex utilizes unique structure that combines the benefits of low ON-resistance with fast switching speed. This makes them ideal for high efficiency and low voltage application...
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N Channel | 30V | 2A | 0.12ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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2N7002H6327XTSA2
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SC21335 |
Power MOSFET, N Channel, 60 V, 300 mA, 1.6 ohm, SOT-23, Surface Mount INFINEON The 2N7002 H6327 is a N-channel OptiMOS™ Small Signal Transistor designed for DC-to-DC converters, eMobility, on-board charger and telecom applications. • Enhancement-mode • Logic level • Avalanche rated • Fast switching • Halogen-free
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N Channel | 60V | 300mA | 1.6ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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STFW3N150
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SC21522 |
Power MOSFET, N Channel, 1.5 kV, 2.5 A, 6 ohm, TO-3PF, Through Hole STMICROELECTRONICS • 1500V, 2.5A N-channel PowerMESH™ power MOSFET in 3 pin TO-3PF package • 100% avalanche tested • Intrinsic capacitances and Qg minimized • High speed switching • Fully isolated TO-3PF plastic package, creepage distance path is 5.4mm typical • Designed us...
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1+ €2.6656 (€3.28) 10+ €2.3205 (€2.85) 100+ €2.2729 (€2.80) |
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N Channel | 1.5kV | 2.5A | 6ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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DMP3013SFV-7
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SC21312 |
Power MOSFET, P Channel, 30 V, 12 A, 0.0095 ohm, PowerDI3333, Surface Mount DIODES INC. DMP3013SFV-7 is a P-channel enhancement mode MOSFET. This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications. Typical applications ...
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P Channel | 30V | 12A | 0.0095ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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NTD5867NLT4G
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SC21486 |
Power MOSFET, N Channel, 60 V, 20 A, 0.026 ohm, TO-252 (DPAK), Surface Mount ONSEMI The NTD5867NLT4G from On Semiconductor is a surface mount, 60V N channel power MOSFET in DPAK package. This device features high current capability, low RDS (on) and avalanche tested thus resulting in minimal conduction losses, robust load performance and ...
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N Channel | 60V | 20A | 0.026ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IPP80P03P4L04AKSA2
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SC20575 |
Power Mosfet Transistor, P Channel, 30V, 80A, TO-220 INFINEON • P-channel - Logic Level - Enhancement mode • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green package (RoHS compliant) • 100% Avalanche tested • Intended for reverse battery protection
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P Channel | 30V | 80A | 0.0037ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SPP20N60C3XKSA1
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SC21344 |
Power MOSFET, N Channel, 650 V, 20.7 A, 0.19 ohm, TO-220, Through Hole INFINEON The SPP20N60C3 is a 650V N-channel CoolMOS™ Power MOSFET with low specific on-state resistance. The CoolMOS™ MOSFET offers a significant reduction of conduction, switching and driving losses and enable high power density and efficiency for superior power c...
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N Channel | 650V | 20.7A | 0.19ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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TSM2306CX RFG
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SC21549 |
Power MOSFET, N Channel, 30 V, 3.5 A, 0.046 ohm, SOT-23, Surface Mount TAIWAN SEMICONDUCTOR The TSM2306CX is a 30V N-channel Power MOSFET with high density cell design for ultra low on-resistance and advance trench process technology. • ±20V Gate-source voltage • 3.5A Continuous source current • 75°C/W Junction-to-case thermal resistance • 130°C/...
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N Channel | 30V | 3.5A | 0.046ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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DMP4051LK3-13
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SC21314 |
Power MOSFET, P Channel, 40 V, 10.5 A, 0.051 ohm, TO-252 (DPAK), Surface Mount DIODES INC. DMP4051LK3-13 is a P-channel enhancement mode MOSFET. This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and maintain superior switching performance, making it ideal for high efficiency power management applications. Typical applications...
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P Channel | 40V | 10.5A | 0.051ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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PMV45EN2R
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SC21453 |
Power MOSFET, N Channel, 30 V, 5.1 A, 0.035 ohm, SOT-23, Surface Mount NEXPERIA • Channel Type : N Channel • Drain Source Voltage Vds : 30V • Continuous Drain Current Id : 5.1A • Drain Source On State Resistance : 0.035ohm
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N Channel | 30V | 5.1A | 0.035ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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NXV75UPR
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SC21426 |
Power MOSFET, P Channel, 20 V, 1.8 A, 0.075 ohm, SOT-23, Surface Mount NEXPERIA • Channel Type : P Channel • Drain Source Voltage Vds : 20V • Continuous Drain Current Id : 1.8A • Drain Source On State Resistance : 0.075ohm
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P Channel | 20V | 1.8A | 0.075ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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2N7002W-7-F
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SC21290 |
Power MOSFET, N Channel, 60 V, 115 mA, 13.5 ohm, SOT-323, Surface Mount DIODES INC. The 2N7002W-7-F is a N-channel enhancement-mode FET with moulded plastic case and solderable matte tin annealed over alloy 42 lead-frame terminals as per MIL-STD-202 standard. • Low ON-resistance • Low gate threshold voltage • Low input capacitance • Fast ...
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N Channel | 60V | 115mA | 13.5ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SUM55P06-19L-E3
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SC21612 |
Power MOSFET, P Channel, 60 V, 55 A, 0.015 ohm, TO-263 (D2PAK), Surface Mount VISHAY The SUM55P06-19L-E3 is a -60V P-channel TrenchFET® Power MOSFET.
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P Channel | 60V | 55A | 0.015ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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NX3008CBKS,115
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SC21423 |
Dual MOSFET, Complementary N and P Channel, 30 V, 30 V, 350 mA, 350 mA, 1 ohm NEXPERIA The NX3008CBKS is a N/P-channel complementary enhancement-mode MOSFET in a very small surface-mount plastic package using Trench MOSFET technology. It is suitable for level shifter, power supply converter, load switch and switching circuit applications. • ...
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Complementary N and P Channel | - | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SI2319DDS-T1-GE3
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SC21593 |
Power MOSFET, P Channel, 40 V, 3.6 A, 0.062 ohm, SOT-23, Surface Mount VISHAY • Channel Type : P Channel • Drain Source Voltage Vds : 40V • Continuous Drain Current Id : 3.6A • Drain Source On State Resistance : 0.062ohm
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P Channel | 40V | 3.6A | 0.062ohm |