MOSFET Transistors

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IRF730APBF
IRF730APBF - Power MOSFET, N Channel, 400 V, 5.5 A, 1 ohm, TO-220AB, Through Hole

SC21576

 
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Power MOSFET, N Channel, 400 V, 5.5 A, 1 ohm, TO-220AB, Through Hole

VISHAY

The IRF730APBF is a N-channel enhancement-mode Power MOSFET with low gate charge. • Improved gate, avalanche and dynamic dV/dt ruggedness • Fully characterized capacitance and avalanche voltage and current • Effective COSS specified • Simple drive requirem...

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N Channel 400V 5.5A 1ohm
IRFR110PBF
IRFR110PBF - Power MOSFET, N Channel, 100 V, 4.3 A, 0.54 ohm, TO-252 (DPAK), Surface Mount

SC21578

 
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Power MOSFET, N Channel, 100 V, 4.3 A, 0.54 ohm, TO-252 (DPAK), Surface Mount

VISHAY

• N-channel power MOSFET in DPAK (TO-252) package • Dynamic dV/dt rating • Repetitive avalanche rated • Fast switching • Ease of paralleling

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N Channel 100V 4.3A 0.54ohm
IRFB3806PBF
IRFB3806PBF - Power MOSFET, N Channel, 60 V, 43 A, 0.0126 ohm, TO-220AB, Through Hole

SC20270

Power MOSFET, N Channel, 60 V, 43 A, 0.0126 ohm, TO-220AB, Through Hole

INFINEON

The IRFB3806PBF is a HEXFET® N-channel Power MOSFET offers improved gate, avalanche and dynamic dV/dt ruggedness. It is suitable for high efficiency synchronous rectification in SMPS, hard switched and high frequency circuits. • Fully characterized capacit...

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N Channel 60V 43A 0.0126ohm
IRF9630PBF
IRF9630PBF - Power MOSFET, P Channel, 200 V, 6.5 A, 0.8 ohm, TO-220AB, Through Hole

SC21577

 
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Power MOSFET, P Channel, 200 V, 6.5 A, 0.8 ohm, TO-220AB, Through Hole

VISHAY

The IRF9630PBF is a -200V single P-channel HEXFET® Power MOSFET, third generation HEXFET provides the designer with the best combination of fast switching, ruggedized device design and low on-resistance. The package is universally preferred for all commerc...

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P Channel 200V 6.5A 0.8ohm
STD20NF06LT4
STD20NF06LT4 - Power MOSFET, N Channel, 60 V, 24 A, 0.032 ohm, TO-252 (DPAK), Surface Mount

SC21521

 
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Power MOSFET, N Channel, 60 V, 24 A, 0.032 ohm, TO-252 (DPAK), Surface Mount

STMICROELECTRONICS

The STD20NF06LT4 is a STripFET™ II N-channel Power MOSFET developed using STMicroelectronics unique Single Feature Size™ strip based process. The device has extremely high packing density for low ON-resistance, rugged avalanche characteristics and less cri...

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N Channel 60V 24A 0.032ohm
STN4NF03L
STN4NF03L - Power MOSFET, N Channel, 30 V, 6.5 A, 0.039 ohm, SOT-223, Surface Mount

SC21523

 
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Power MOSFET, N Channel, 30 V, 6.5 A, 0.039 ohm, SOT-223, Surface Mount

STMICROELECTRONICS

The STN4NF03L is a STripFET™ II N-channel Power MOSFET developed using unique Single Feature Size™ strip-based process. The device has extremely high packing density for low ON-resistance, rugged avalanche characteristics and less critical alignment steps ...

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N Channel 30V 6.5A 0.039ohm
IRF7341TRPBFXTMA1
IRF7341TRPBFXTMA1 - Dual Mosfet, N-Ch, 55V, 4.7A, SO-8

SC20269

Dual Mosfet, N-Ch, 55V, 4.7A, SO-8

INFINEON

• Channel Type : Dual N Channel

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Dual N Channel - - -
TP0610K-T1-E3
TP0610K-T1-E3 - Power MOSFET, P Channel, 60 V, 185 mA, 6 ohm, SOT-23, Surface Mount

SC21613

 
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Power MOSFET, P Channel, 60 V, 185 mA, 6 ohm, SOT-23, Surface Mount

VISHAY

The TP0610K-T1-E3 is a 60VDS TrenchFET® P-channel enhancement-mode Power MOSFET suitable for relays, solenoids, lamps, hammers, displays, transistors and memories drivers. • Low ON-resistance • High-side switching • Low threshold • 20ns Fast switching spee...

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P Channel 60V 185mA 6ohm
NX3008PBKW,115
NX3008PBKW,115 - Power MOSFET, P Channel, 30 V, 200 mA, 2.8 ohm, SOT-323, Surface Mount

SC21424

 
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Power MOSFET, P Channel, 30 V, 200 mA, 2.8 ohm, SOT-323, Surface Mount

NEXPERIA

The NX3008PBKW is a P-channel enhancement mode Field-Effect Transistor (FET) in surface mount plastic package using Trench MOSFET technology. Suitable for relay driver, high-speed line driver and high-side loadswitch. • Logic-level compatible • Very fast s...

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P Channel 30V 200mA 2.8ohm
SI2347DS-T1-GE3
SI2347DS-T1-GE3 - Power MOSFET, P Channel, 30 V, 5 A, 0.033 ohm, SOT-23, Surface Mount

SC21594

 
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Power MOSFET, P Channel, 30 V, 5 A, 0.033 ohm, SOT-23, Surface Mount

VISHAY

• Channel Type : P Channel • Drain Source Voltage Vds : 30V • Continuous Drain Current Id : 5A • Drain Source On State Resistance : 0.033ohm

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P Channel 30V 5A 0.033ohm
SI1022R-T1-GE3
SI1022R-T1-GE3 - Power MOSFET, N Channel, 60 V, 330 mA, 1.25 ohm, SC-75A, Surface Mount

SC21592

 
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Power MOSFET, N Channel, 60 V, 330 mA, 1.25 ohm, SC-75A, Surface Mount

VISHAY

The SI1022R-T1-GE3 is a 60VDS TrenchFET® N-channel enhancement-mode Power MOSFET suitable for relays, solenoids, lamps, hammers, displays and memories drivers. • 2000V Gate-source ESD protected • Low ON-resistance • Low threshold • 25ns Fast switching spee...

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N Channel 60V 330mA 1.25ohm
BSS123NH6327XTSA1
BSS123NH6327XTSA1 - Power MOSFET, N Channel, 100 V, 190 mA, 2.4 ohm, SOT-23, Surface Mount

SC21339

 
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Power MOSFET, N Channel, 100 V, 190 mA, 2.4 ohm, SOT-23, Surface Mount

INFINEON

• 100V, 0.19A OptiMOS™ N-channel small signal transistor in 3 pin SOT-23 package • Enhancement mode • Logic level (4.5V rated) • Avalanche rated • Qualified according to AEC Q101

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N Channel 100V 190mA 2.4ohm
SQ2389ES-T1_GE3
SQ2389ES-T1_GE3 - Power MOSFET, P Channel, 40 V, 4.1 A, 0.094 ohm, SOT-23, Surface Mount

SC21607

 
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Power MOSFET, P Channel, 40 V, 4.1 A, 0.094 ohm, SOT-23, Surface Mount

VISHAY

• Channel Type : P Channel • Drain Source Voltage Vds : 40V • Continuous Drain Current Id : 4.1A • Drain Source On State Resistance : 0.094ohm

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P Channel 40V 4.1A 0.094ohm
DMN62D0U-7
DMN62D0U-7 - Power MOSFET, N Channel, 60 V, 380 mA, 2 ohm, SOT-23, Surface Mount

SC21310

 
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Power MOSFET, N Channel, 60 V, 380 mA, 2 ohm, SOT-23, Surface Mount

DIODES INC.

DMN62D0U-7 is a N-channel enhancement mode MOSFET. This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power-management applications. Typical applications in...

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N Channel 60V 380mA 2ohm
DMP2120U-7
DMP2120U-7 - Power MOSFET, P Channel, 20 V, 3.8 A, 0.062 ohm, SOT-23, Surface Mount

SC21311

 
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Power MOSFET, P Channel, 20 V, 3.8 A, 0.062 ohm, SOT-23, Surface Mount

DIODES INC.

DMP2120U-7 is a P-channel enhancement mode MOSFET. This MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high-efficiency power management applications. Typical applications i...

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P Channel 20V 3.8A 0.062ohm
SQ1421EDH-T1_GE3
SQ1421EDH-T1_GE3 - Power MOSFET, P Channel, 60 V, 1.6 A, 0.23 ohm, SC-70, Surface Mount

SC21605

 
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Power MOSFET, P Channel, 60 V, 1.6 A, 0.23 ohm, SC-70, Surface Mount

VISHAY

• Channel Type : P Channel • Drain Source Voltage Vds : 60V • Continuous Drain Current Id : 1.6A • Drain Source On State Resistance : 0.23ohm

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P Channel 60V 1.6A 0.23ohm
SUD50N06-09L-E3
SUD50N06-09L-E3 - Power MOSFET, N Channel, 60 V, 50 A, 0.0074 ohm, TO-252 (DPAK), Surface Mount

SC21611

 
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Power MOSFET, N Channel, 60 V, 50 A, 0.0074 ohm, TO-252 (DPAK), Surface Mount

VISHAY

The SUD50N06-09L-E3 is a 60VDS TrenchFET® N-channel enhancement-mode Power MOSFET with antiparallel diode. • -55 to 175°C Operating temperature range

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N Channel 60V 50A 0.0074ohm
BS170-D26Z
BS170-D26Z - Power MOSFET, N Channel, 60 V, 500 mA, 1.2 ohm, TO-92, Through Hole

SC21472

 
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Power MOSFET, N Channel, 60 V, 500 mA, 1.2 ohm, TO-92, Through Hole

ONSEMI

The BS170_D26Z is a 60V N-channel enhancement mode Field Effect Transistor produced using high cell density, DMOS technology. This device has been designed to minimize on-state resistance while providing rugged, reliable and fast switching performance. Thi...

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N Channel 60V 500mA 1.2ohm
SQJ479EP-T1_GE3
SQJ479EP-T1_GE3 - Power MOSFET, P Channel, 80 V, 32 A, 0.0275 ohm, PowerPAK SO, Surface Mount

SC21608

 
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Power MOSFET, P Channel, 80 V, 32 A, 0.0275 ohm, PowerPAK SO, Surface Mount

VISHAY

• Channel Type : P Channel • Drain Source Voltage Vds : 80V • Continuous Drain Current Id : 32A • Drain Source On State Resistance : 0.0275ohm

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P Channel 80V 32A 0.0275ohm
SI7145DP-T1-GE3
SI7145DP-T1-GE3 - Power MOSFET, P Channel, 30 V, 60 A, 0.0021 ohm, PowerPAK SO, Surface Mount

SC21598

 
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Power MOSFET, P Channel, 30 V, 60 A, 0.0021 ohm, PowerPAK SO, Surface Mount

VISHAY

• Channel Type : P Channel • Drain Source Voltage Vds : 30V • Continuous Drain Current Id : 60A • Drain Source On State Resistance : 0.0021ohm

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P Channel 30V 60A 0.0021ohm
FDPF55N06
FDPF55N06 - Power MOSFET, N Channel, 60V, 55A, 0.018 ohm, TO-220F

SC20049

Power MOSFET, N Channel, 60V, 55A, 0.018 ohm, TO-220F

ONSEMI

The FDPF55N06 is tailored ti reduce in-state resistance and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factorfactor correction (PFC),...

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N Channel 60V 55A 0.018ohm
IRF540NSTRLPBF
IRF540NSTRLPBF - Power MOSFET, N Channel, 100 V, 33 A, 0.044 ohm, TO-263 (D2PAK), Surface Mount

SC21341

 
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Power MOSFET, N Channel, 100 V, 33 A, 0.044 ohm, TO-263 (D2PAK), Surface Mount

INFINEON

The IRF540NSTRLPBF is a HEXFET® single N-channel Power MOSFET utilizes advanced processing techniques to achieve extremely low ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design, provides an ext...

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N Channel 100V 33A 0.044ohm
2N7002A-7
2N7002A-7 - Power MOSFET, N Channel, 60 V, 180 mA, 6 ohm, SOT-23, Surface Mount

SC21288

 
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Power MOSFET, N Channel, 60 V, 180 mA, 6 ohm, SOT-23, Surface Mount

DIODES INC.

2N7002A-7 is a N-channel enhancement mode MOSFET. This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications and motor control. ...

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N Channel 60V 180mA 6ohm
SI4463CDY-T1-GE3
SI4463CDY-T1-GE3 - Power MOSFET, P Channel, 20 V, 18.6 A, 0.006 ohm, SOIC, Surface Mount

SC21596

 
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Power MOSFET, P Channel, 20 V, 18.6 A, 0.006 ohm, SOIC, Surface Mount

VISHAY

The SI4463CDY-T1-GE3 is a 2.5VGS TrenchFET® P-channel enhancement-mode Power MOSFET suitable for adaptor switch, high current load switch and notebook applications. • 100% Rg tested • 100% UIS tested • Halogen-free • -55 to 150°C Operating temperature rang...

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P Channel 20V 18.6A 0.006ohm
BSC009NE2LS5IATMA1
BSC009NE2LS5IATMA1 - Power MOSFET, N Channel, 25 V, 100 A, 800 µohm, TDSON, Surface Mount

SC21338

 
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Power MOSFET, N Channel, 25 V, 100 A, 800 µohm, TDSON, Surface Mount

INFINEON

• Channel Type : N Channel • Drain Source Voltage Vds : 25V • Continuous Drain Current Id : 100A • Drain Source On State Resistance : 800µohm

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N Channel 25V 100A 800µohm