Single MOSFET Transistors
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| Manufacturer Part No | Order Code | Description / Manufacturer | Availability | Price For |
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Quantity | Channel Type | Drain Source Voltage Vds | Continuous Drain Current Id | Drain Source On State Resistance | Transistor Case Style | Transistor Mounting | Rds(on) Test Voltage | Gate Source Threshold Voltage Max | Power Dissipation | No. of Pins | Operating Temperature Max | Product Range | Qualification | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRFR5305TRLPBF
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SC16940 |
Power MOSFET, P Channel, 55 V, 31 A, 0.065 ohm, TO-252 (DPAK), Surface Mount INFINEON The IRFR5305TRLPBF is a HEXFET® fifth generation single P-channel Power MOSFET utilizes advanced processing techniques to achieve extremely low ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design...
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P Channel | 55V | 31A | 0.065ohm | TO-252 (DPAK) | Surface Mount | 10V | 4V | 110W | 3Pins | 175°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
FDV303N
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SC16700 |
SMD N Channel Power MOSFET, Digital FET, SOT-23, 680mA, 25V ONSEMI The FDV303N is a surface mount, N channel logic level enhancement mode digital FET in SOT-23 package. This device features high cell density, DMOS technology which has been tailored to minimize the onstate resistance and maintain low gate drive conditions....
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N Channel | 25V | 680mA | 0.45ohm | SOT-23 | Surface Mount | 4.5V | 1V | 350mW | 3Pins | 150°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
FDS3672
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SC16907 |
Power MOSFET, N Channel, 100 V, 7.5 A, 0.019 ohm, SOIC, Surface Mount ONSEMI The FDS3672 is a N-channel MOSFET produced using PowerTrench® process. It is suitable for high voltage synchronous rectifier, DC-to-DC converters and off-line UPS, distributed power architectures and VRMs, primary switch for 24 and 48V systems. • Low mille...
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N Channel | 100V | 7.5A | 0.019ohm | SOIC | Surface Mount | 10V | 4V | 2.5mW | 8Pins | 150°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SI2305CDS-T1-GE3
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SC16725 |
Power MOSFET, P Channel, 8 V, 5.8 A, 0.028 ohm, SOT-23, Surface Mount VISHAY The SI2305CDS-T1-GE3 is a 8VDS TrenchFET® P-channel enhancement-mode Power MOSFET suitable for load switch and DC-to-DC converter applications. • 100% Rg tested • -55 to 150°C Operating temperature range • Halogen-free
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P Channel | 8V | 5.8A | 0.028ohm | SOT-23 | Surface Mount | 4.5V | 1V | 1.7W | 3Pins | 150°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPP045N10N3GXKSA1
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SC16948 |
Power MOSFET, N Channel, 100 V, 100 A, 0.0039 ohm, TO-220, Through Hole INFINEON The IPP045N10N3 G is an OptiMOS™ N-channel Power MOSFET offers superior solutions for high efficiency, high power-density SMPS. Compared to the next best technology this family achieves a reduction of 30% in both RDS (ON) and FOM. • World's lowest RDS (ON)...
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N Channel | 100V | 100A | 0.0039ohm | TO-220 | Through Hole | 10V | 2.7V | 214W | 3Pins | 175°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRF530A
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SC16916 |
Power MOSFET, N Channel, 100 V, 14 A, 0.11 ohm, TO-220, Through Hole ONSEMI The IRF530A is a 100V N-channel Advanced Power MOSFET featured with avalanche rugged technology and rugged gate oxide technology. It has lower input capacitance and improved gate charge. • Extended safe operating area • Lower leakage current (10A maximum a...
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N Channel | 100V | 14A | 0.11ohm | TO-220 | Through Hole | 10V | 4V | 55W | 3Pins | 175°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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STP40NF03L
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SC16918 |
Power MOSFET, N Channel, 30 V, 40 A, 0.022 ohm, TO-220, Through Hole STMICROELECTRONICS The STP40NF03L is a STripFET™ N-channel Power MOSFET developed using unique Single Feature Size™ strip-based process. The device has extremely high packing density for low ON-resistance, rugged avalanche characteristics and less critical alignment steps th...
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N Channel | 30V | 40A | 0.022ohm | TO-220 | Through Hole | 10V | 1.7V | 70W | 3Pins | 175°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SI7469DP-T1-E3
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SC16866 |
Power MOSFET, P Channel, 80 V, 28 A, 0.021 ohm, PowerPAK SO, Surface Mount VISHAY The SI7469DP-T1-E3 is a -80V P-channel TrenchFET® Power MOSFET. The P-channel MOSFET for switching applications are now available with die on resistances around 1mΩ and with the capability to handle 85A. • Halogen-free according to IEC 61249-2-21 definitio...
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P Channel | 80V | 28A | 0.021ohm | PowerPAK SO | Surface Mount | 10V | 3V | 83W | 8Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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2N7002NXBKR
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SC15955 |
Power MOSFET, Trench, N Channel, 60V, 270mA, 2.2 Ohm, SOT-23, SMD NEXPERIA • Channel Type : N Channel • Drain Source Voltage Vds : 60V • Continuous Drain Current Id : 270mA • Drain Source On State Resistance : 2.2ohm • Transistor Case Style : SOT-23 • Transistor Mounting : Surface Mount • Rds(on) Test Voltage : 10V • Gate Source Threshold Voltage Max : 1.6V • Power Dissipation : 310mW • No. of Pins : 3Pins • Operating Temperature Max : 150°C
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N Channel | 60V | 270mA | 2.2ohm | SOT-23 | Surface Mount | 10V | 1.6V | 310mW | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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STP45N65M5
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SC15834 |
Power MOSFET, N Channel, 650V, 35A, 0.067 ohm, TO-220 STMICROELECTRONICS The STP45N65M5 is a 650V N-channel MDmesh™ V Power MOSFET based on an innovative proprietary vertical process technology, which is combined with well-known PowerMESH™ horizontal layout structure. The MOSFET has extremely low on resistance, which is unmatch...
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N Channel | 650V | 35A | 0.067ohm | TO-220 | Through Hole | 10V | 4V | 210W | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRF6218STRLPBF
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SC17010 |
Power MOSFET, P Channel, 150 V, 27 A, 0.12 ohm, TO-263 (D2PAK), Surface Mount INFINEON The IRF6218STRLPBF is a HEXFET® single P-channel Power MOSFET offers fully characterized capacitance including effective COSS to simplify design. It is suitable for reset switch for active clamp reset DC-to-DC converters. • Low gate-to-drain charge to redu...
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P Channel | 150V | 27A | 0.12ohm | TO-263 (D2PAK) | Surface Mount | 10V | 5V | 250W | 3Pins | 175°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRF9310TRPBF
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SC16838 |
Power MOSFET, P Channel, 30 V, 2 A, 0.0039 ohm, SOIC, Surface Mount INFINEON The IRF9310TRPBF is a HEXFET® single P-channel Power MOSFET for use with battery protection, high side and low side load switch, charge and discharge switch for Notebook PC battery application. • Low RDS (ON) (≤4.6mΩ) results in low conduction losses • Ind...
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P Channel | 30V | 2A | 0.0039ohm | SOIC | Surface Mount | 10V | 1.8V | 2.5W | 8Pins | 150°C | HEXFET | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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FQPF5N60C
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SC16973 |
Power MOSFET, N Channel, 600 V, 4.5 A, 2.5 ohm, TO-220F, Through Hole ONSEMI The FQPF5N60C is a 600V N-channel QFET® enhancement mode Power MOSFET is produced using planar stripe and DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance and wit...
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N Channel | 600V | 4.5A | 2.5ohm | TO-220F | Through Hole | 10V | 4V | 33W | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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ZXM61N03F
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SC16868 |
Power MOSFET, N Channel, 30 V, 1.4 A, 0.22 ohm, SOT-23, Surface Mount DIODES INC. The ZXM61N03F is a N-channel enhancement mode MOSFET uses diodes proprietary, high density, uses advanced trench technology. Designed to minimize on-state resistance while provide rugged, reliable and fast switching performance. Suitable for low voltage an...
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N Channel | 30V | 1.4A | 0.22ohm | SOT-23 | Surface Mount | 10V | 1V | 625mW | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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PMV65XP,215
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SC16826 |
Power MOSFET, P Channel, 20 V, 4.3 A, 0.058 ohm, TO-236AB, Surface Mount NEXPERIA The PMV65XP,215 is a P-channel enhancement mode Field-Effect Transistor (FET) in a Surface Mounted Device (SMD) plastic package using Trench MOSFET technology. • Low Threshold Voltage • Low On-state Resistance
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P Channel | 20V | 4.3A | 0.058ohm | TO-236AB | Surface Mount | 4.5V | 750mV | 833mW | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRF100B201
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SC16963 |
Power MOSFET, N Channel, 100 V, 192 A, 0.0035 ohm, TO-220AB, Through Hole INFINEON HEXFET® power MOSFET suitable for use in brushed motor drive applications, BLDC motor drive applications, battery powered circuits, half-bridge and full-bridge topologies, synchronous rectifier applications, resonant mode power supplies, OR-ing and redunda...
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N Channel | 100V | 192A | 0.0035ohm | TO-220AB | Through Hole | 10V | 4V | 441W | 3Pins | 175°C | StrongIRFET, HEXFET | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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NX2301P,215
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SC16710 |
Power MOSFET, P Channel, 20 V, 2 A, 0.1 ohm, SOT-23, Surface Mount NEXPERIA The NX2301P is a P-channel enhancement mode Field-Effect Transistor (FET) in a Surface Mounted Device (SMD) plastic package using Trench MOSFET technology. • 1.8V RDSon rated for Low Voltage Gate Drive • Very Fast Switching • AEC-Q101 Qualified
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P Channel | 20V | 2A | 0.1ohm | SOT-23 | Surface Mount | 4.5V | 750mV | 400mW | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRF520PBF
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SC16914 |
Power MOSFET, N Channel, 100 V, 9.2 A, 0.27 ohm, TO-220AB, Through Hole VISHAY The IRF520PBF is a 100V N-channel Power MOSFET provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The low thermal resistance contributes to its wide acceptance throughout t...
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N Channel | 100V | 9.2A | 0.27ohm | TO-220AB | Through Hole | 10V | 4V | 60W | 3Pins | 175°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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STP20NM50
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SC16982 |
Power MOSFET, N Channel, 550 V, 20 A, 0.25 ohm, TO-220, Through Hole STMICROELECTRONICS The STP20NM50 is a MDmesh™ N-channel Power MOSFET associates the multiple drain process with PowerMESH™ horizontal layout. The device has an outstanding low ON-resistance, impressively high dV/dt and excellent avalanche characteristics and dynamic performa...
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N Channel | 550V | 20A | 0.25ohm | TO-220 | Through Hole | 10V | 4V | 192W | 3Pins | 150°C | STP | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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NX3008PBK,215
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SC16776 |
Power MOSFET, P Channel, 30 V, 230 mA, 2.8 ohm, SOT-23, Surface Mount NEXPERIA The NX3008PBK is a P-channel enhancement-mode FET in a small surface-mount plastic package using Trench MOSFET technology. It is suitable for use in relay driver, low-side load-switch, high-speed line driver and switching circuit applications. • Very fast ...
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P Channel | 30V | 230mA | 2.8ohm | SOT-23 | Surface Mount | 4.5V | 900mV | 350mW | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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PMV32UP,215
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SC16848 |
Power MOSFET, P Channel, 20 V, 4 A, 0.032 ohm, SOT-23, Surface Mount NEXPERIA The PMV32UP is a P-channel enhancement-mode FET in a small surface-mount plastic package using Trench MOSFET technology. It is suitable for use in relay driver, high-speed line driver, High-side load-switch and switching circuit applications. • 1.8V Drain-...
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P Channel | 20V | 4A | 0.032ohm | SOT-23 | Surface Mount | 4.5V | 700mV | 510mW | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BSS123-7-F
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SC16705 |
Power MOSFET, N Channel, 100 V, 170 mA, 6 ohm, SOT-23, Surface Mount DIODES INC. The BSS123-7-F is a N-channel Enhancement Mode MOSFET uses diodes proprietary, high density and uses advanced trench technology. Matte tin finish annealed over alloy 42 lead frame terminals and UL94V-0 flame-rated moulded plastic case. Designed to minimize...
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N Channel | 100V | 170mA | 6ohm | SOT-23 | Surface Mount | 10V | 1.4V | 300mW | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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2N7002WT1G
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SC16709 |
Power MOSFET, N Channel, 60 V, 340 mA, 1.19 ohm, SOT-323, Surface Mount ONSEMI The 2N7002WT1G is a N-channel small signal Power MOSFET ideal for low power applications. It offers 60V drain source voltage and 310mA continuous drain current. It is suitable for low side load switch, level shift circuits, DC-to-DC converter, DSC and PDA ...
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N Channel | 60V | 340mA | 1.19ohm | SOT-323 | Surface Mount | 10V | 1V | 330mW | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SQ2361ES-T1_GE3
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SC15964 |
Power MOSFET, P Channel, 60V, 2.8A, 0.13 Ohm, SOT-23, SMD VISHAY New AEC-Q101 automotive MOSFETs ffrom Vishay are manufactured on a dedicated process flow to instill ruggedness. Rated for a maximum junction temperature of 175 °C, the Vishay Siliconix AEC-Q101 qualified SQ series features low on-resistance n- and p-chann...
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P Channel | 60V | 2.8A | 0.13ohm | SOT-23 | Surface Mount | 10V | 2.5V | 2W | 3Pins | 175°C | TrenchFET | AEC-Q101 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRLR7843TRPBF
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SC17008 |
Power MOSFET, N Channel, 30 V, 161 A, 0.0026 ohm, TO-252AA, Surface Mount INFINEON The IRLR7843TRPBF is a HEXFET® single N-channel Power MOSFET offers ultra-low gate impedance, fully characterized avalanche voltage and current. It is suitable for high frequency synchronous buck converters and high frequency isolated DC-to-DC converter wi...
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N Channel | 30V | 161A | 0.0026ohm | TO-252AA | Surface Mount | 10V | 2.3V | 140W | 3Pins | 175°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||