Single MOSFET Transistors
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| Manufacturer Part No | Order Code | Description / Manufacturer | Availability | Price For |
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Quantity | Channel Type | Drain Source Voltage Vds | Continuous Drain Current Id | Drain Source On State Resistance | Transistor Case Style | Transistor Mounting | Rds(on) Test Voltage | Gate Source Threshold Voltage Max | Power Dissipation | No. of Pins | Operating Temperature Max | Product Range | Qualification | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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NTR4003NT1G
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SC16762 |
Power MOSFET, N Channel, 30 V, 560 mA, 1.5 ohm, SOT-23, Surface Mount ONSEMI The NTR4003NT1G is a N-channel Small-signal MOSFET offers 30V drain source voltage and 0.5A continuous drain current. It is suitable for notebooks used as level shifters, logic switches and low side load switches. • Low gate voltage threshold VGS (th) to f...
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N Channel | 30V | 560mA | 1.5ohm | SOT-23 | Surface Mount | 4V | 1.4V | 830mW | 3Pins | 150°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
FDC658AP
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SC16747 |
Power MOSFET, P Channel, 30 V, 4 A, 0.044 ohm, SuperSOT, Surface Mount ONSEMI The FDC658AP is a logic level single P-channel MOSFET produced using advanced PowerTrench® process. It has been optimized for battery power management, load switch and DC-to-DC conversion applications. • Low gate charge • High performance Trench technology...
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P Channel | 30V | 4A | 0.044ohm | SuperSOT | Surface Mount | 10V | 1.8V | 1.6W | 6Pins | 150°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SUD50P10-43L-E3
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SC16863 |
Power MOSFET, P Channel, 100 V, 38 A, 0.036 ohm, TO-252AA, Surface Mount VISHAY The SUD50P10-43L-E3 is a P-channel TrenchFET® Power MOSFET with 175°C operating temperature. • ±20V Gate-source voltage
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P Channel | 100V | 38A | 0.036ohm | TO-252AA | Surface Mount | 10V | 3V | 136W | 3Pins | 175°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2N7002K
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SC15990 |
Power MOSFET, N Channel, 60V, 300mA, 2 Ohm, SOT-23, SMD ONSEMI The 2N7002K is a N-channel enhancement mode Field Effect Transistor features low on resistance, low gate threshold voltage, low input capacitance and fast switching speed. • Low input/output leakage • ±20V Gate-source voltage
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N Channel | 60V | 300mA | 2ohm | SOT-23 | Surface Mount | 10V | 2.5V | 350mW | 3Pins | 150°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
PMV16XNR
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SC16871 |
Power MOSFET, N Channel, 20 V, 6.8 A, 0.016 ohm, TO-236AB, Surface Mount NEXPERIA The PMV16XN is a N-channel enhancement-mode FET in a small surface-mount plastic package using Trench MOSFET technology. It is suitable for use in LED driver, low-side load-switch and switching circuit applications. • Low threshold voltage • Very fast swit...
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N Channel | 20V | 6.8A | 0.016ohm | TO-236AB | Surface Mount | 4.5V | 650mV | 510mW | 3Pins | 150°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRF7240TRPBF
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SC16857 |
Power MOSFET, P Channel, 40 V, 10.5 A, 0.015 ohm, SOIC, Surface Mount INFINEON The IRF7240TRPBF is a HEXFET® single P-channel Power MOSFET utilizes advanced processing techniques to achieve the extremely low ON-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and lo...
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P Channel | 40V | 10.5A | 0.015ohm | SOIC | Surface Mount | 10V | 3V | 2.5W | 8Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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FDN5618P
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SC16699 |
SMD Power MOSFET P Channel PowerTrench Transistor, SuperSOT, 60V, 1.25A ONSEMI The FDN5618P is a surface mount, 60V P channel logic level powerTrench MOSFET in superSOT-23 package. PowerTrench process has been tailored to minimize the onstate resistance and maintain low gate charge for superior switching performance. This device is w...
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P Channel | 60V | 1.25A | 0.17ohm | SuperSOT | Surface Mount | 10V | 1.6V | 500mW | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRF540PBF
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SC15756 |
Power MOSFET, N Channel, 100V, 28A, 0.077 Ohm, TO-220AB VISHAY The IRF540PBF is a 100V N-channel Power MOSFET, third generation power MOSFET provides the designer with the best combination of fast switching, ruggedized device design and low on-resistance. • Dynamic dV/dt rating • Repetitive avalanche rated • 175°C Ope...
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N Channel | 100V | 28A | 0.077ohm | TO-220AB | Through Hole | 10V | 4V | 150W | 3Pins | 175°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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FDP18N50
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SC15742 |
Power MOSFET, N Channel, 500 V, 18 A, 0.265 ohm, TO-220, Through Hole ONSEMI The FDP18N50 is a 500V N-channel UniFET™ MOSFET based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance and to provide better switching performance and higher avalanche energy strength. The body diode's reverse rec...
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N Channel | 500V | 18A | 0.265ohm | TO-220 | Through Hole | 10V | 5V | 235W | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BSH105,215
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SC16721 |
Power MOSFET, N Channel, 20 V, 1.05 A, 0.14 ohm, SOT-23, Surface Mount NEXPERIA The BSH105,215 is a N-channel enhancement mode Field-Effect Transistor in a plastic package using vertical D-MOS technology. Suitable for high frequency applications due to fast switching characteristics. • Logic-level compatible • Very fast switching • Lo...
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N Channel | 20V | 1.05A | 0.14ohm | SOT-23 | Surface Mount | 4.5V | 570mV | 417mW | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRF1404ZPBF
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SC16968 |
Power MOSFET, N Channel, 40 V, 190 A, 0.0037 ohm, TO-220AB, Through Hole INFINEON The IRF1404ZPBF is a 40V single N-channel HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching ...
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N Channel | 40V | 190A | 0.0037ohm | TO-220AB | Through Hole | 10V | 4V | 220W | 3Pins | 175°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRLML6244TRPBF
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SC16790 |
Power MOSFET, N Channel, 20 V, 6.3 A, 0.021 ohm, SOT-23, Surface Mount INFINEON The IRLML6244TRPBF is a N-channel HEXFET® Power MOSFET for load/system switch. • Industry Standard • MSL1, Industrial Qualification • Multi-vendor Compatibility • Environmentally-friendly • Surface Mount
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N Channel | 20V | 6.3A | 0.021ohm | SOT-23 | Surface Mount | 4.5V | 900mV | 1.3W | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SI2312BDS-T1-E3
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SC16834 |
Power MOSFET, N Channel, 20 V, 3.9 A, 0.025 ohm, SOT-23, Surface Mount VISHAY The SI2312BDS-T1-E3 is a 20VDS TrenchFET® N-channel enhancement-mode Power MOSFET with antiparallel diode. • 100% Rg tested • -55 to 150°C Operating temperature range
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N Channel | 20V | 3.9A | 0.025ohm | SOT-23 | Surface Mount | 4.5V | 850mV | 750mW | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SUM110P06-07L-E3
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SC16897 |
Power MOSFET, P Channel, 60 V, 110 A, 0.0055 ohm, TO-263 (D2PAK), Surface Mount VISHAY The SUM110P06-07L-E3 is a P-channel TrenchFET® Power MOSFET with 175°C operating temperature. • ±20V Gate-source voltage • 40°C/W Junction-to-ambient thermal resistance • 0.4°C/W Junction-to-case thermal resistance
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P Channel | 60V | 110A | 0.0055ohm | TO-263 (D2PAK) | Surface Mount | 10V | 3V | 3.75W | 3Pins | 175°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SPW47N60C3FKSA1
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SC15826 |
Power MOSFET, N Channel, 650V, 47A, 0.07 ohm, TO-247, INFINEON The SPW47N60C3 is a 650V N-channel CoolMOS™ Power MOSFET with low specific on-state resistance. The CoolMOS™ MOSFET offers a significant reduction of conduction, switching and driving losses and enable high power density and efficiency for superior power c...
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N Channel | 650V | 47A | 0.07ohm | TO-247 | Through Hole | 10V | 3V | 415W | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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FDT86102LZ
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SC17016 |
Power MOSFET, N Channel, 100 V, 6.6 A, 0.022 ohm, SOT-223, Surface Mount ONSEMI This N Channel MOSFET is produced using Fairchild Semiconductors advance PowerTrench® process that has been especially tailored to minimise the on state resistance and switch loss. G-S Zener has been added to enhance ESD voltage levels. • Suitable for DC/D...
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N Channel | 100V | 6.6A | 0.022ohm | SOT-223 | Surface Mount | 10V | 1.4V | 2.2W | 4Pins | 150°C | PowerTrench | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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STP75NF75
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SC16908 |
Power MOSFET, N Channel, 75 V, 80 A, 0.0095 ohm, TO-220, Through Hole STMICROELECTRONICS The STP75NF75 is a 75V N-channel STripFET™ II Power MOSFET realized with unique STripFET process. It has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high efficiency isolat...
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N Channel | 75V | 80A | 0.0095ohm | TO-220 | Through Hole | 10V | 3V | 300W | 3Pins | 175°C | STP | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BUK98150-55A/CUF
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SC16879 |
SMD N Channel Power MOSFET, 55V, 5.5A, 0.116 Ohm, SC-73 NEXPERIA The BUK98150-55A/CUF from NEXPERIA is a Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. • Suitable for 12V & 24V loads, automotive & general purpose power switching and motors, lamps & s...
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N Channel | 55V | 5.5A | 0.116ohm | SC-73 | Surface Mount | 10V | 1.5V | 8W | 4Pins | 150°C | TrenchMOS | AEC-Q101 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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2N7002P,215
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SC15989 |
Power MOSFET, N Channel, 60V, 360mA, 1 Ohm, TO-236AB, SMD NEXPERIA The 2N7002P,215 is a N-channel enhancement-mode MOSFET designed in a small surface-mount plastic package using Trench MOSFET technology. It is suitable for use in relay driver, high-speed line driver, low-side load-switch and switching circuits. • Logic-le...
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N Channel | 60V | 360mA | 1ohm | TO-236AB | Surface Mount | 10V | 1.75V | 420mW | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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LND150N3-G
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SC16955 |
Power MOSFET, N Channel, 500 V, 30 mA, 850 ohm, TO-92, Through Hole MICROCHIP The LND150N3-G is a 500V High Voltage N-channel Depletion Mode (normally-on) Transistor utilizing lateral DMOS technology. The gate is ESD protected. The LND150 is ideal for high voltage applications in the areas of normally-on switches, precision constant...
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N Channel | 500V | 30mA | 850ohm | TO-92 | Through Hole | 0V | - | 740mW | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SQM40031EL_GE3
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SC16939 |
SMD P Channel Power MOSFET 40V, 120A, 0.0025 Ohm, TO-263 (D2PAK) VISHAY • TrenchFET® power MOSFET • Package with low thermal resistance • 100 % Rg and UIS tested • AEC-Q101 qualified
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P Channel | 40V | 120A | 0.0025ohm | TO-263 (D2PAK) | Surface Mount | 10V | 2V | 375W | 3Pins | 175°C | TrenchFET | AEC-Q101 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRLML6346TRPBF
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SC16737 |
Power MOSFET, N Channel, 30 V, 3.4 A, 0.046 ohm, SOT-23, Surface Mount INFINEON The IRLML6346TRPBF is a HEXFET® single N-channel Power MOSFET for use with battery protection, DC switches, high side and low side load switch. It is compatible with existing surface-mount techniques. • Halogen-free • Consumer qualification MSL-1 (increase...
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N Channel | 30V | 3.4A | 0.046ohm | SOT-23 | Surface Mount | 4.5V | 800mV | 1.3W | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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FDS8447
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SC16894 |
Power MOSFET, N Channel, 40 V, 12.8 A, 0.009 ohm, SOIC, Surface Mount ONSEMI The FDS8447 is a single N-channel MOSFET produced using advanced PowerTrench® process. It has been especially tailored to minimize the ON-state resistance and yet maintain superior switching performance. • Low gate charge • High performance Trench technolo...
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N Channel | 40V | 12.8A | 0.009ohm | SOIC | Surface Mount | 10V | 1.8V | 2.5mW | 8Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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STP8NK100Z
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SC16933 |
Power MOSFET, N Channel, 1 kV, 6.5 A, 1.85 ohm, TO-220, Through Hole STMICROELECTRONICS The STP8NK100Z is a 1000V N-channel Zener-protected Power MOSFET developed using SuperMESH™ technology, achieved through optimization of well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care i...
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N Channel | 1kV | 6.5A | 1.85ohm | TO-220 | Through Hole | 10V | 3.75V | 160W | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRF9530PBF
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SC17014 |
Power MOSFET, P Channel, 100 V, 12 A, 0.3 ohm, TO-220AB, Through Hole VISHAY The IRF9530PBF is a -100V P-channel Power MOSFET, third generation HEXFET® power MOSFET provides the designer with the best combination of fast switching, ruggedized device design and low on-resistance. The package is universally preferred for all commerci...
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P Channel | 100V | 12A | 0.3ohm | TO-220AB | Through Hole | 10V | 4V | 88W | 3Pins | 175°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||