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Bipolar Pre-Biased / Digital Transistor, BRT, Single NPN, 50V, 100mA, 4.7 kohm, 47 kohm - 

MMUN2233LT1G

MMUN2233LT1G - Bipolar Pre-Biased / Digital Transistor, BRT, Single NPN, 50V, 100mA, 4.7 kohm, 47 kohm

Image is for illustrative purposes only. Please refer to product description.

Manufacturer:
ONSEMI ONSEMI
Manufacturer Part No:
MMUN2233LT1G
Order Code:
SC15940
Product Range
-
Technical Datasheet:
MMUN2233LT1G   Datasheet
See all Technical Docs

Product Overview

MMUN2233LT1G is an MMUN2233L series NPN transistor with a monolithic bias resistor network digital transistor. It is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space.
  • Simplifies circuit design, reduces board space, reduces component count
  • Collector-base voltage is 50VDC max (TA = 25°C, common for Q1 and Q2)
  • Collector-emitter voltage is 50VDC max (TA = 25°C, common for Q1 and Q2)
  • Collector current - continuous is 100mAdc max (TA = 25°C, common for Q1 and Q2)
  • Input forward voltage is 30VDC max (TA = 25°C, common for Q1 and Q2)
  • Input reverse voltage is 5VDC max (TA = 25°C, common for Q1 and Q2)
  • Total device dissipation is 230mW max (TA = 25°C)
  • DC current gain is 200 (IC = 5.0mA, VCE = 10V, TA = 25°C)
  • Input resistor range from 3.3 to 6.1kohm (TA = 25°C, common for Q1 and Q2)
  • SOT-23 package, junction temperature range from -55 to +150°C

Product Information


:
Single NPN

:
50V

:
-

:
100mA

:
4.7kohm

:
47kohm

:
SOT-23

:
3 Pin

:
Surface Mount

:
400mW

:
150°C

:
80hFE

:
-

:
-

:
-

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Technical Documents (2)

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