Bipolar Transistors
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| Manufacturer Part No | Order Code | Description / Manufacturer | Availability | Price For |
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Quantity | Transistor Polarity | Collector Emitter Voltage Max | Continuous Collector Current | Power Dissipation | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MJ21193G
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SC06826 |
Transistor, PNP, TO3 ONSEMI The MJ21193G is a -250V Silicon PNP Bipolar Power Transistor that utilizes perforated emitter technology and is specifically designed for high power audio output, disk head positioners and linear applications. • Total harmonic distortion characterized • Hi...
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PNP | 250V | 16A | 250W | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
ZTX450
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SC10969 |
Transistor, NPN, E-Line DIODES INC. ZTX450 is a through hole, NPN silicon planar medium power transistor in E-Line (TO-92 Compatible) package. • Collector to emitter voltage (Vce) of 45V • Collector to base voltage of 60V • Power dissipation (Pd) of 1W • Continuous collector current of 1A • ...
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NPN | 45V | 1A | 1W | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
FMMT617
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SC06628 |
Transistor, NPN, SOT23 DIODES INC. The FMMT617 is a NPN silicon power switching Bipolar Transistor offers 625mW power dissipation and extremely low saturation voltage. • 12A Peak pulse current • Excellent hFE characteristics up to 12A • Extremely low equivalent on resistance • PNP complemen...
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NPN | 15V | 3A | 625mW | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BCX17
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SC06607 |
Transistor, PNP SOT23 NXP The BCX17 is a PNP General Purpose Transistor housed in a plastic package. It is suitable for use with the saturated switching and driver applications, thick and thin-film circuits. • High current • Low voltage • NPN complement is BCX19 • T1 Marking code
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PNP | 45V | 500mA | 250mW | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TIP35C
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SC06791 |
Transistor, NPN, TO247, 100V, 3MHz, 125W, 25A STMICROELECTRONICS The TIP35C from STMicroelectronics is a through hole complementary power transistor in TO-247 package. This device manufactured in planar technology with “base island” layout resulting in exceptional high gain performance coupled with very low saturation v...
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NPN | 100V | 25A | 125W | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MJL3281AG
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SC06820 |
Transistor, NPN, TO264 ONSEMI The MJL3281AG is a NPN complementary Bipolar Power Transistor with superior gain linearity. • Complement to MJL1302A • Exceptional Safe Operating Area • Gain Matching within 10% from 50mA to 3A • Excellent Gain Linearity • High BVCEO • High Frequency • Rel...
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NPN | 260V | 15A | 200W | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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FZT949
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SC10991 |
Transistor, PNP, SOT223 DIODES INC. The FZT949 is a -30V PNP Complementary Medium Power High Current Transistor with matte tin plated leads solderable as per MIL-STD-202 standard, method 208. • High continuous collector current • Low saturation voltages • hFE specified up to -20A for a high ...
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PNP | 30V | 7A | 3W | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BCW71
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SC06592 |
Transistor, NPN SOT23 NXP The BCW71 is a NPN General Purpose Transistor housed in a plastic package. It is suitable for use with the general purpose switching and amplification. • Low current • Low voltage • Low noise • K1 Marking code
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NPN | 45V | 100mA | 250mW | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC807-16
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SC06596 |
Transistor, PNP SOT23 NXP The BC807 series 500mA PNP General Purpose Transistor suitable for use with general purpose switching and amplification. • High current • Low voltage • BC817 NPN complement
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PNP | 45V | 500mA | 250mW | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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ZTX551
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SC10974 |
Transistor, PNP, E-Line DIODES INC. The ZTX551 is a PNP silicon planar medium power Bipolar Transistor offers -1A continuous collector current and -80V collector-base voltage. • -55 to 200°C Operating temperature range
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PNP | 60V | 1A | 1W | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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TIP29A
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SC06753 |
Transistor, NPN, TO220 MULTICOMP PRO The TIP29A is a NPN high power Bipolar Transistor offers 0.7V (maximum) collector-emitter saturation voltage at 1A and 3MHz minimum current gain-bandwidth product at 200mA. • -65 to 150°C Operating junction temperature range • Multicomp Pro products are ra...
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NPN | 60V | 1A | 30W | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BD911
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SC06747 |
Transistor, NPN, TO220 STMICROELECTRONICS The BD911 from STMicroelectronics is a through hole NPN complementary power transistors in TO-220 package. This device manufactured in epitaxial planar technology. • Collector to emitter voltage (Vce) is 100V • Collector current (Ic) is 15A • Power dissipa...
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NPN | 100V | 15A | 90W | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC237B
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SC09155 |
Transistor, NPN, TO92 MULTICOMP PRO The BC237B is a NPN silicon planar Epitaxial Transistor, best suited for use in driver stages of audio amplifiers, low noise input stages of tape recorders, Hi-Fi amplifiers, signal processing circuits of television receivers. • 375°C/W Junction to Ambient...
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NPN | 45V | 100mA | 350mW | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MPSA92
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SC09160 |
Transistor, PNP, TO92 MULTICOMP PRO The MPSA92 is a low power Bipolar Transistor with breakdown voltage of 160V minimum for applications requiring relatively low collector current such as lamp drivers and neon tubes. Designed for general purpose applications requiring high breakdown voltages...
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PNP | 300V | 500mA | 625mW | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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2N2905
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SC06701 |
Transistor, PNP, TO39 MULTICOMP PRO The 2N2905 from Multicomp Pro is a through hole, silicon planar PNP low power bipolar transistors in TO-39 metal can package. This are general purpose transistor suitable for switching applications. • Collector emitter voltage (Vce) of -40V • Continuous co...
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PNP | 40V | 600mA | 3W | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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2N2907
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SC06704 |
Transistor, PNP, TO18 MULTICOMP PRO The 2N2907 from Multicomp Pro is a through hole, PNP transistors in TO-18 metal can package. This transistor is suitable for switching and amplification. • Collector emitter voltage (Vce) of -40V • Continuous collector current (Ic) of -600mA • Power dissip...
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PNP | 40V | 600mA | 1.8W | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC640
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SC09157 |
Transistor, PNP, TO92 MULTICOMP PRO The BC640 is a PNP silicon planar epitaxial low power Bipolar Transistor for driver stages and audio amplifier applications. • 45°C/W Junction-to-case thermal resistance • 156°C/W Junction-to-ambient in free air thermal resistance • Multicomp Pro products ...
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PNP | 80V | 1A | 800mW | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC849C
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SC06588 |
Transistor, NPN SOT23 NXP • Transistor Polarity : NPN • Collector Emitter Voltage Max : 30V • Continuous Collector Current : 100mA • Power Dissipation : 250mW
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NPN | 30V | 100mA | 250mW | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC847B
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SC06614 |
Transistor, NPN, SOT23 NXP • Transistor Polarity : NPN • Collector Emitter Voltage Max : 45V • Continuous Collector Current : 100mA • Power Dissipation : 250mW
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NPN | 45V | 100mA | 250mW | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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TIP36C
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SC06792 |
Transistor, PNP, TO218 STMICROELECTRONICS The TIP36C is a complementary PNP Power Transistor with low collector-emitter saturation voltage. It is manufactured in planar technology with base island layout. The resulting transistor show exceptional high gain performance coupled with very low saturat...
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PNP | 100V | 25A | 125W | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BU426A
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SC06797 |
Transistor, NPN, TO218 MULTICOMP PRO The BU426A is a NPN Fast Switching High Voltage Transistor more specially intended for operating in colour TV supply systems. • Collector-emitter sustaining voltage (Vceo (sus) = 400V minimum) • Low collector-emitter saturation voltage • High voltage power...
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NPN | 400V | 6A | 113W | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BD135
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SC10992 |
Transistor, NPN, TO126 STMICROELECTRONICS The BD135 is a NPN low voltage Transistor built in epitaxial planar technology. Designed for audio amplifiers and drivers utilizing complementary or quasi-complementary circuits. • Complement to BD136 • 0.5A Base current • 10°C/W Junction-to-case thermal r...
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NPN | 45V | 1.5A | 1.25W | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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D44H8G
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SC06751 |
Transistor, NPN, TO220 ONSEMI The D44H8G is a 10A NPN bipolar Power Transistor offers low collector-emitter saturation voltage. It can be used as general purpose power amplification and switching such as output or driver stages in applications such as switching regulators, converters a...
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NPN | 60V | 10A | 2W | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC635
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SC06696 |
Transistor, NPN, TO92 MULTICOMP PRO The BC635 is a NPN silicon planar epitaxial medium power Bipolar Transistor with high performance, low frequency devices typically with current ratings 1A up to 1W power dissipation. • Driver stages of audio amplifier application • 45°C/W Junction-to-case ...
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NPN | 45V | 1A | 800mW | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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2N3906
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SC08424 |
Transistor, PNP, TO92 MULTICOMP PRO The 2N3906 from Multicomp Pro is a through hole, PNP low power, silicon planar switching transistors in TO-92 metal can package. This transistor features fast switching, hence is suitable for switching and amplification. • Collector emitter voltage (Vce) o...
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PNP | 40V | 200mA | 625mW | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||