Single Bipolar Junction Transistors - BJT
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| Manufacturer Part No | Order Code | Description / Manufacturer | Availability | Price For |
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Quantity | Transistor Polarity | Collector Emitter Voltage V(br)ceo | Collector Emitter Voltage Max | DC Collector Current | Continuous Collector Current | Power Dissipation | Transistor Case Style | Transistor Mounting | No. of Pins | Transition Frequency | DC Current Gain hFE Min | DC Current Gain hFE | Operating Temperature Max | Product Range | Qualification | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC107B
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SC06645 |
Si-NPN Uni 50V 0.2A 0.3W MULTICOMP PRO The BC107B from Multicomp Pro is a low power bipolar transistor in TO-18 metal can package. This NPN silicon planar epitaxial transistor is used for general purpose switching and amplification. • Collector emitter voltage (Vce) is 45V at IC = 2mA, IB = 0 •...
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NPN | - | 45V | - | 100mA | 600mW | TO-18 | Through Hole | 3Pins | 150MHz | 200hFE | - | 200°C | Multicomp Pro Bipolar NPN Transistor | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MJE15031.
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SC01309 |
Transistor, TO220 MULTICOMP PRO • Transistor Polarity : PNP • Collector Emitter Voltage Max : 150V • Continuous Collector Current : 8A • Power Dissipation : 50W • Transistor Case Style : TO-220 • Transistor Mounting : Through Hole • No. of Pins : 3Pins • DC Current Gain hFE Min : 40hFE • Operating Temperature Max : 150°C
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1+ €1.5276 (€1.88) 10+ €1.2654 (€1.56) 100+ €1.083 (€1.33) |
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PNP | - | 150V | - | 8A | 50W | TO-220 | Through Hole | 3Pins | - | 40hFE | - | 150°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MJ15024G
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SC06782 |
Transistor, NPN, TO3 ONSEMI The MJ15024G is a 250V Silicon NPN Bipolar Power Transistor designed for high power audio, disk head positioners and other linear applications. • High DC current gain • High safe operating area • Collector-base voltage (Vcbo = 400V) • Emitter-base voltage ...
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1+ €5.9964 (€7.38) 10+ €5.7228 (€7.04) 100+ €5.4834 (€6.74) |
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NPN | - | 250V | - | 16A | 250W | TO-3 | Through Hole | 2Pins | 4MHz | 15hFE | - | 200°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BU406
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SC06796 |
Transistor, NPN, TO220 MULTICOMP PRO The BU406 is a NPN Power Transistor for horizontal deflection output stages of TV and CTV circuits. • High voltage • Collector-emitter sustaining voltage (Vceo (sus) = 400V minimum) • Low saturation voltage • Fast switching speed • Multicomp Pro products a...
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1+ €1.083 (€1.33) 10+ €0.9462 (€1.16) 100+ €0.8208 (€1.01) 500+ €0.6726 (€0.83) |
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NPN | - | 200V | - | 7A | 60W | TO-220 | Through Hole | 3Pins | 10MHz | 30hFE | - | 150°C | Multicomp Pro Bipolar Power Transistors NPN | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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D45H8G
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SC06761 |
Transistor, PNP, TO220 ONSEMI The D45H8G is a 10A PNP bipolar Power Transistor offers low collector-emitter saturation voltage. It can be used as general purpose power amplification and switching such as output or driver stages in applications such as switching regulators, converters a...
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1+ €1.0944 (€1.35) 10+ €0.912 (€1.12) 100+ €0.7752 (€0.95) |
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PNP | - | 60V | - | 10A | 70W | TO-220 | Through Hole | 3Pins | 40MHz | 60hFE | - | 150°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SMBT3904
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SC10623 |
Transistor, NPN, SOT23 INFINEON • Transistor Polarity : NPN • Collector Emitter Voltage Max : 40V • Continuous Collector Current : 200mA • Power Dissipation : 330mW • Transistor Case Style : SOT-23 • Transistor Mounting : Surface Mount • No. of Pins : 3Pins • Transition Frequency : 270MHz • DC Current Gain hFE Min : 100hFE • Operating Temperature Max : 150°C
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NPN | - | 40V | - | 200mA | 330mW | SOT-23 | Surface Mount | 3Pins | 270MHz | 100hFE | - | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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2N5551
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SC06652 |
Si-N 180V 0.6A 0.31W TO92 Q14 ONSEMI The 2N5551 is a through hole, NPN general purpose amplifier in TO-92 package. This device is designed for general purpose high voltage amplifiers and gas discharge display drivers. • Collector to emitter breakdown voltage of 160V • Collector to emitter sat...
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NPN | - | 160V | - | 600mA | 625mW | - | Through Hole | 3Pins | 150MHz | 80hFE | - | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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FZT653
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SC10978 |
Transistor, NPN, SOT223 DIODES INC. The FZT653 is a NPN High Performance Transistor with matte tin-plated terminals, UL94V-0-flame rated moulded plastic case, solderable terminals as per MIL-STD-202, method 208 standard. • Complement to FZT753 • Level-1 per J-STD-020 moisture sensitivity • G...
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NPN | - | 100V | - | 2A | 2W | SOT-223 | Surface Mount | 4Pins | 175MHz | 200hFE | - | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MJ15003
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SC06779 |
Transistor, NPN, TO3 MULTICOMP PRO The MJ15003 from Multicomp Pro are through hole, NPN Complementary silicon power transistors in TO-3 metal can package. This transistor is suitable in high power audio, disk head positioners and other linear applications. • Collector emitter voltage (Vce) ...
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NPN | - | 140V | - | 20A | 250W | TO-3 | Through Hole | 2Pins | 2MHz | 25hFE | - | 200°C | Multicomp Pro Bipolar NPN Single Transistors | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MJ15022G
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SC06781 |
Transistor, NPN, TO3 ONSEMI The MJ15022G is a 200V Silicon NPN Bipolar Power Transistor designed for high power audio, disk head positioners and other linear applications. • High DC current gain • High safe operating area • Collector-base voltage (Vcbo = 350V) • Emitter-base voltage ...
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NPN | - | 200V | - | 16A | 250W | TO-3 | Through Hole | 2Pins | 4MHz | 60hFE | - | 200°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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TIP3055
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SC06790 |
Transistor, NPN, TO218 STMICROELECTRONICS The TIP3055 from STMicroelectronics is a through hole complementary power transistor in TO-247 package. This device manufactured in epitaxial base planar technology and suitable for general purpose, power linear and switching applications. • Collector to e...
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1+ €0.8208 (€1.01) 10+ €0.684 (€0.84) 100+ €0.5814 (€0.72) |
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NPN | - | 70V | - | 15A | 90W | TO-247 | Through Hole | 3Pins | - | 20hFE | - | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BF259MC
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SC06649 |
Transistor, NPN TO39 MULTICOMP PRO • Transistor Polarity : NPN • Collector Emitter Voltage Max : 300V • Transistor Mounting : Through Hole • No. of Pins : 3Pins
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NPN | - | 300V | - | - | - | - | Through Hole | 3Pins | - | - | - | - | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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TIP50G
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SC06808 |
Transistor, NPN, TO220 ONSEMI The TIP50G is a 400V Silicon NPN Bipolar High Voltage Power Transistor designed for line operated audio output amplifier, switch mode power supply drivers and other switching applications. • Collector-base voltage (Vcbo = 500V) • Emitter-base voltage (Vcbo...
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NPN | - | 400V | - | 1A | 40W | TO-220AB | Through Hole | 3Pins | 10MHz | 10hFE | - | 150°C | TIPxxx | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC109B
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SC06718 |
Transistor, NPN, TO18 MULTICOMP PRO The BC109B is a 25V Silicon NPN Bipolar Planar Epitaxial Transistor with low power. • Collector-base voltage(Vcbo = 30V) • Emitter-base voltage(Vebo = 5V) • Multicomp Pro products are rated 4.6 out of 5 stars • 12 month limited warranty *view Terms & Condi...
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NPN | - | 25V | - | 200mA | 600mW | TO-18 | Through Hole | 3Pins | 150MHz | 450hFE | - | 200°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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FZT753
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SC10981 |
Transistor, PNP, SOT223 DIODES INC. FZT753 is a 100V, 2A PNP silicon planar medium power transistor in a 4 pin SOT-223 package. • Low saturation voltage • Excellent hFE specified up to 2A • Complementary NPN type FZT653 • 2W power dissipation
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PNP | - | 100V | - | 2A | 2W | SOT-223 | Surface Mount | 4Pins | 140MHz | 100hFE | - | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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PMBT4403
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SC06611 |
Transistor, PNP SOT23 NXP • Transistor Polarity : PNP • Collector Emitter Voltage Max : 40V • Continuous Collector Current : 600mA • Power Dissipation : 250mW • Transistor Case Style : SOT-23 • Transistor Mounting : Surface Mount • No. of Pins : 3Pins • Transition Frequency : 250MHz • DC Current Gain hFE Min : 100hFE • Operating Temperature Max : 150°C
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PNP | - | 40V | - | 600mA | 250mW | SOT-23 | Surface Mount | 3Pins | 250MHz | 100hFE | - | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC849B
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SC06619 |
Transistor, NPN SOT23 ONSEMI • Transistor Polarity : NPN • Collector Emitter Voltage Max : 30V • Continuous Collector Current : 100mA • Power Dissipation : 300mW • Transistor Case Style : SOT-23 • Transistor Mounting : Surface Mount • No. of Pins : 3Pins • DC Current Gain hFE Min : 200hFE • Operating Temperature Max : 150°C
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NPN | - | 30V | - | 100mA | 300mW | SOT-23 | Surface Mount | 3Pins | - | 200hFE | - | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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2N3439
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SC06793 |
Transistor, NPN TO39 MULTICOMP PRO The 2N3439 is a 350V Silicon NPN Bipolar Transistor intended for high voltage switching and linear amplifier applications. • Collector-base voltage(Vcbo = 450V) • Emitter-base voltage(Vebo = 7V) • Multicomp Pro products are rated 4.6 out of 5 stars • 12 mo...
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NPN | - | 350V | - | 1A | 1W | TO-39 | Through Hole | 3Pins | 15MHz | 160hFE | - | 200°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MJL21193G
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SC06829 |
Transistor, PNP, TO264 ONSEMI The MJL21193G is a PNP Bipolar complementary Audio Power Transistor, utilizes Perforated Emitter technology. Specifically designed for high power audio output, disk head positioners and other linear applications. • Complement to MJL21194G • Excellent Gain ...
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PNP | - | 250V | - | 16A | 200W | TO-264 | Through Hole | 3Pins | 4MHz | 75hFE | - | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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ZTX651
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SC10970 |
Transistor, NPN, E-Line DIODES INC. The ZTX651 from Diode Inc is a through hole, 60V NPN medium power transistor in E-Line (TO-92 Compatible) package. This device is based on moulded plastic and “Green” moulding compound and terminals are matte tin finish. • Automotive grade AEC-Q101 qualifi...
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NPN | - | 60V | - | 2A | 1W | TO-92 | Through Hole | 3Pins | 175MHz | 100hFE | - | 200°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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2N2905A
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SC06713 |
Transistor, PNP, TO39 MULTICOMP PRO General purpose silicon planar PNP switching transistor. • Multicomp Pro products are rated 4.6 out of 5 stars • 12-month limited warranty *view Terms & Conditions for details • 96% of customers would recommend to a friend
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PNP | - | 60V | - | 600mA | 3W | TO-39 | Through Hole | 3Pins | 200MHz | 100hFE | - | 200°C | Multicomp Pro Bipolar PNP Transistors | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BCX17
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SC06607 |
Transistor, PNP SOT23 NXP The BCX17 is a PNP General Purpose Transistor housed in a plastic package. It is suitable for use with the saturated switching and driver applications, thick and thin-film circuits. • High current • Low voltage • NPN complement is BCX19 • T1 Marking code
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PNP | - | 45V | - | 500mA | 250mW | SOT-23 | Surface Mount | 3Pins | - | 100hFE | - | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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TIP35C
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SC06791 |
Transistor, NPN, TO247, 100V, 3MHz, 125W, 25A STMICROELECTRONICS The TIP35C from STMicroelectronics is a through hole complementary power transistor in TO-247 package. This device manufactured in planar technology with “base island” layout resulting in exceptional high gain performance coupled with very low saturation v...
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NPN | - | 100V | - | 25A | 125W | TO-247 | Through Hole | 3Pins | 3MHz | 10hFE | - | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MJ21193G
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SC06826 |
Transistor, PNP, TO3 ONSEMI The MJ21193G is a -250V Silicon PNP Bipolar Power Transistor that utilizes perforated emitter technology and is specifically designed for high power audio output, disk head positioners and linear applications. • Total harmonic distortion characterized • Hi...
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PNP | - | 250V | - | 16A | 250W | TO-3 | Through Hole | 3Pins | 4MHz | 75hFE | - | 200°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC107
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SC06644 |
Si-NPN Uni 50V 0.2A 0.3W MULTICOMP PRO The BC107 from Multicomp Pro is a low power bipolar transistor in TO-18 metal can package. This NPN silicon planar epitaxial transistor is used for general purpose switching and amplification. • Collector emitter voltage (Vce) is 45V at IC = 2mA, IB = 0 • ...
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NPN | - | 45V | - | 200mA | 750mW | TO-18 | Through Hole | 3Pins | 150MHz | 110hFE | - | 200°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||