Single Bipolar Junction Transistors - BJT
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| Manufacturer Part No | Order Code | Description / Manufacturer | Availability | Price For |
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Quantity | Transistor Polarity | Collector Emitter Voltage V(br)ceo | Collector Emitter Voltage Max | DC Collector Current | Continuous Collector Current | Power Dissipation | Transistor Case Style | Transistor Mounting | No. of Pins | Transition Frequency | DC Current Gain hFE Min | DC Current Gain hFE | Operating Temperature Max | Product Range | Qualification | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MJE15032G
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SC06818 |
Transistor, NPN, TO220 ONSEMI The MJE15032G is a 250V Silicon NPN Complementary Plastic Power Transistor designed for use as high frequency drivers in audio amplifiers. • High DC current gain • High current gain bandwidth • Epoxy meets UL 94V-0 rating
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NPN | - | 250V | - | 8A | 50W | TO-220 | Through Hole | 3Pins | 30MHz | 70hFE | - | 150°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TIP36C
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SC06792 |
Transistor, PNP, TO218 STMICROELECTRONICS The TIP36C is a complementary PNP Power Transistor with low collector-emitter saturation voltage. It is manufactured in planar technology with base island layout. The resulting transistor show exceptional high gain performance coupled with very low saturat...
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1+ €1.7365 (€2.14) 10+ €1.449 (€1.78) 100+ €1.242 (€1.53) |
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PNP | - | 100V | - | 25A | 125W | TO-247 | Through Hole | 3Pins | 3MHz | 50hFE | - | 150°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BC177
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SC06647 |
Transistor, PNP, TO18 MULTICOMP PRO The BC177 is a -45V Silicon PNP Bipolar Planar Epitaxial Transistor with low power. • Collector-base voltage(Vcbo = 50V) • Emitter-base voltage(Vebo = 5V) • Multicomp Pro products are rated 4.6 out of 5 stars • 12 month limited warranty *view Terms & Condi...
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PNP | - | 45V | - | 200mA | 600mW | TO-18 | Through Hole | 3Pins | 200MHz | 120hFE | - | 200°C | Multicomp Pro Bipolar Transistors PNP | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BC109
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SC06717 |
Transistor, NPN, TO18 MULTICOMP PRO The BC109 from Multicomp Pro are through hole, NPN low power, silicon planar epitaxial transistors in TO-18 metal can package. This device is used for switching and amplification. • Collector emitter voltage (Vce) of 25V • Continuous collector current (Ic)...
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NPN | - | 25V | - | 200mA | 600mW | TO-18 | Through Hole | 3Pins | 150MHz | 240hFE | - | 200°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BUX80
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SC06803 |
Transistor, NPN, TO3 MULTICOMP PRO The BUX80 is a 400V NPN High Voltage Power Transistor designed for use in high voltage and high speed power switching in inductive circuit, motor control, solenoid and relay drivers. • Collector-emitter sustaining voltage (Vceo (sus) = 4000V minimum) • Low...
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1+ €2.116 (€2.60) 10+ €1.817 (€2.23) |
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NPN | - | 400V | - | 10A | 100W | TO-3 | Through Hole | 2Pins | - | 30hFE | - | 200°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MJL21194G
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SC06819 |
Transistor, NPN, TO264 ONSEMI The MJL21194G is a NPN complementary Bipolar Power Transistor, utilize Perforated Emitter technology. Designed for high power audio output, disk head positioners and other linear applications. • Complement to MJL21193G • Excellent Gain Linearity • Total Ha...
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1+ €6.2445 (€7.68) 10+ €5.359 (€6.59) 100+ €4.692 (€5.77) |
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NPN | - | 250V | - | 16A | 200W | TO-264 | Through Hole | 3Pins | 4MHz | 75hFE | - | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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ZTX451
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SC10972 |
Transistor, NPN, E-Line DIODES INC. The ZTX451 is a NPN silicon planar medium power Bipolar Transistor offers 1A continuous collector current and 80V collector-base voltage. • -55 to 200°C Operating temperature range
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NPN | - | 60V | - | 1A | 1W | E-Line | Through Hole | 3Pins | 150MHz | 50hFE | - | 200°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC109C
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SC06719 |
Transistor, NPN, TO18 MULTICOMP PRO The BC109C from Multicomp Pro are through hole, NPN low power, silicon planar epitaxial transistors in TO-18 metal can package. This device is used for switching and amplification. • Collector emitter voltage (Vce) of 25V • Continuous collector current (Ic...
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NPN | - | 25V | - | 200mA | 600mW | TO-18 | Through Hole | 3Pins | 150MHz | 800hFE | - | 200°C | Multicomp Pro Bipolar Single Transistors NPN | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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PMBT4403
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SC06611 |
Transistor, PNP SOT23 NXP • Transistor Polarity : PNP • Collector Emitter Voltage Max : 40V • Continuous Collector Current : 600mA • Power Dissipation : 250mW • Transistor Case Style : SOT-23 • Transistor Mounting : Surface Mount • No. of Pins : 3Pins • Transition Frequency : 250MHz • DC Current Gain hFE Min : 100hFE • Operating Temperature Max : 150°C
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PNP | - | 40V | - | 600mA | 250mW | SOT-23 | Surface Mount | 3Pins | 250MHz | 100hFE | - | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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ZTX753.
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SCZTX753 |
PNP 120V 2A 1W DIODES INC. • Transistor Polarity : PNP • Collector Emitter Voltage Max : 100V • Continuous Collector Current : 2A • Power Dissipation : 1W • Transistor Case Style : E-Line • Transistor Mounting : Through Hole • No. of Pins : 3Pins • Transition Frequency : 140MHz • DC Current Gain hFE Min : 100hFE • Operating Temperature Max : 200°C
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1+ €0.667 (€0.82) 10+ €0.529 (€0.65) 100+ €0.414 (€0.51) |
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PNP | - | 100V | - | 2A | 1W | E-Line | Through Hole | 3Pins | 140MHz | 100hFE | - | 200°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC337
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SC06661 |
Transistor, NPN TO92 MULTICOMP PRO The BC337 is a NPN silicon Planar Epitaxial Transistor, suitable for use in driver and output stages of audio amplifier. • 200°C/W Junction to Ambient in Free Air Thermal Resistance • Multicomp Pro products are rated 4.6 out of 5 stars • 12 month limited w...
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NPN | - | 45V | - | 800mA | 625mW | TO-92 | Through Hole | 3Pins | 100MHz | 100hFE | - | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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FMMT619
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SC06630 |
Transistor, NPN, SOT23 DIODES INC. The FMMT619 from Diode Inc is a surface mount, 50V NPN silicon low saturation transistor in SOT-23 package. This transistor is moulded in plastic and "Green" moulding compound, terminal is matte tin finish. • Automotive grade AEC-Q101 qualified • UL recogn...
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NPN | - | 50V | - | 2A | 625mW | SOT-23 | Surface Mount | 3Pins | 140MHz | 450hFE | - | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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FMMT720
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SC06633 |
Transistor, PNP, SOT23 DIODES INC. The FMMT720 is a PNP silicon Low Saturation Transistor with tin-plated terminals, UL94V-0-flame rated moulded plastic case, solderable terminals as per MIL-STD-202, method 208 standard. • Complement to FMMT619 • Level-1 per J-STD-020 moisture sensitivity •...
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PNP | - | 40V | - | 1.5A | 625mW | SOT-23 | Surface Mount | 3Pins | 190MHz | 475hFE | - | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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TIP42C
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SC07847 |
Transistor, PNP, TO220 MULTICOMP PRO The TIP42C is a -100V PNP complementary silicon plastic Power Transistor designed for use in general purpose power amplifier and switching applications. • 100V Minimum collector-emitter sustaining voltage (VCEO (sus)) • 1.5V Maximum collector-emitter satur...
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PNP | - | 100V | - | 6A | 65W | TO-220 | Through Hole | 3Pins | 3MHz | 30hFE | - | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MJE340
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SC06487 |
Si-N 300V 0.5A 20W Vidpow STMICROELECTRONICS The MJE340 is a 300V Silicon Planar NPN Complementary Power Transistor intended for use in medium power linear and switching applications. Fast switching times and very low saturation voltage resulting in reduced switching and conduction losses. • Compleme...
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NPN | - | 300V | - | 500mA | 20.8W | TO-225AA | Through Hole | 3Pins | - | 240hFE | - | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MJ15015G
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SC06780 |
Transistor, NPN, TO3 ONSEMI The MJ15015G is a 120V NPN complementary silicon Bipolar Transistor designed for high power audio, stepping motor and other linear applications. It can also be used in power switching circuits such as relay or solenoid drivers, DC-to-DC converters, inverte...
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NPN | - | 120V | - | 15A | 180W | TO-3 | Through Hole | 2Pins | 6MHz | 70hFE | - | 200°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC817-16,215
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SC10625 |
Transistor, NPN, SOT23 NXP • Transistor Polarity : NPN • Collector Emitter Voltage Max : 45V • Continuous Collector Current : 500mA • Power Dissipation : 250mW • Transistor Case Style : SOT-23 • No. of Pins : 3Pins • DC Current Gain hFE Min : 100hFE • Operating Temperature Max : 150°C
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NPN | - | 45V | - | 500mA | 250mW | SOT-23 | - | 3Pins | - | 100hFE | - | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MJ21193G
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SC06826 |
Transistor, PNP, TO3 ONSEMI The MJ21193G is a -250V Silicon PNP Bipolar Power Transistor that utilizes perforated emitter technology and is specifically designed for high power audio output, disk head positioners and linear applications. • Total harmonic distortion characterized • Hi...
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1+ €7.705 (€9.48) 10+ €6.601 (€8.12) 100+ €5.7845 (€7.11) |
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PNP | - | 250V | - | 16A | 250W | TO-3 | Through Hole | 3Pins | 4MHz | 75hFE | - | 200°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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FMMT617
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SC06628 |
Transistor, NPN, SOT23 DIODES INC. The FMMT617 is a NPN silicon power switching Bipolar Transistor offers 625mW power dissipation and extremely low saturation voltage. • 12A Peak pulse current • Excellent hFE characteristics up to 12A • Extremely low equivalent on resistance • PNP complemen...
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NPN | - | 15V | - | 3A | 625mW | SOT-23 | Surface Mount | 3Pins | 120MHz | 450hFE | - | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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ZTX450
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SC10969 |
Transistor, NPN, E-Line DIODES INC. ZTX450 is a through hole, NPN silicon planar medium power transistor in E-Line (TO-92 Compatible) package. • Collector to emitter voltage (Vce) of 45V • Collector to base voltage of 60V • Power dissipation (Pd) of 1W • Continuous collector current of 1A • ...
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NPN | - | 45V | - | 1A | 1W | E-Line | Through Hole | 3Pins | 150MHz | 100hFE | - | 200°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BCX17
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SC06607 |
Transistor, PNP SOT23 NXP The BCX17 is a PNP General Purpose Transistor housed in a plastic package. It is suitable for use with the saturated switching and driver applications, thick and thin-film circuits. • High current • Low voltage • NPN complement is BCX19 • T1 Marking code
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PNP | - | 45V | - | 500mA | 250mW | SOT-23 | Surface Mount | 3Pins | - | 100hFE | - | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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TIP35C
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SC06791 |
Transistor, NPN, TO247, 100V, 3MHz, 125W, 25A STMICROELECTRONICS The TIP35C from STMicroelectronics is a through hole complementary power transistor in TO-247 package. This device manufactured in planar technology with “base island” layout resulting in exceptional high gain performance coupled with very low saturation v...
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NPN | - | 100V | - | 25A | 125W | TO-247 | Through Hole | 3Pins | 3MHz | 10hFE | - | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC857C
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SC06616 |
Transistor, PNP, SOT23 NXP • Transistor Polarity : PNP • Collector Emitter Voltage Max : 45V • Continuous Collector Current : 100mA • Power Dissipation : 250mW • Transistor Case Style : SOT-23 • Transistor Mounting : Surface Mount • No. of Pins : 3Pins • DC Current Gain hFE Min : 420hFE • Operating Temperature Max : 150°C
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PNP | - | 45V | - | 100mA | 250mW | SOT-23 | Surface Mount | 3Pins | - | 420hFE | - | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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ZTX653.
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SCZTX653 |
NPN 120V 2A 1W DIODES INC. • Transistor Polarity : NPN • Collector Emitter Voltage Max : 100V • Continuous Collector Current : 2A • Power Dissipation : 1W • Transistor Case Style : E-Line • Transistor Mounting : Through Hole • No. of Pins : 3Pins • Transition Frequency : 175MHz • Operating Temperature Max : 200°C
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NPN | - | 100V | - | 2A | 1W | E-Line | Through Hole | 3Pins | 175MHz | - | - | 200°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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2N5195G
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SC06743 |
Transistor, PNP, TO126 ONSEMI The 2N5195G is a 4A silicon PNP Power Transistor designed for use in power amplifier and switching circuits and offers excellent safe area limits. • Complement to NPN 2N5191 and 2N5192
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PNP | - | 80V | - | 4A | 40W | TO-225 | Through Hole | 3Pins | 2MHz | 80hFE | - | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||