Single Bipolar Junction Transistors - BJT

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Transistor Polarity Collector Emitter Voltage V(br)ceo Collector Emitter Voltage Max DC Collector Current Continuous Collector Current Power Dissipation Transistor Case Style Transistor Mounting No. of Pins Transition Frequency DC Current Gain hFE Min DC Current Gain hFE Operating Temperature Max Product Range Qualification
 
 
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BC177
BC177 - Transistor, PNP, TO18

SC06647

Transistor, PNP, TO18

MULTICOMP PRO

The BC177 is a -45V Silicon PNP Bipolar Planar Epitaxial Transistor with low power. • Collector-base voltage(Vcbo = 50V) • Emitter-base voltage(Vebo = 5V) • Multicomp Pro products are rated 4.6 out of 5 stars • 12 month limited warranty *view Terms & Condi...

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PNP - 45V - 200mA 600mW TO-18 Through Hole 3Pins 200MHz 120hFE - 200°C Multicomp Pro Bipolar Transistors PNP -
BC109
BC109 - Transistor, NPN, TO18

SC06717

Transistor, NPN, TO18

MULTICOMP PRO

The BC109 from Multicomp Pro are through hole, NPN low power, silicon planar epitaxial transistors in TO-18 metal can package. This device is used for switching and amplification. • Collector emitter voltage (Vce) of 25V • Continuous collector current (Ic)...

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NPN - 25V - 200mA 600mW TO-18 Through Hole 3Pins 150MHz 240hFE - 200°C - -
BUX80
BUX80 - Transistor, NPN, TO3

SC06803

Transistor, NPN, TO3

MULTICOMP PRO

The BUX80 is a 400V NPN High Voltage Power Transistor designed for use in high voltage and high speed power switching in inductive circuit, motor control, solenoid and relay drivers. • Collector-emitter sustaining voltage (Vceo (sus) = 4000V minimum) • Low...

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NPN - 400V - 10A 100W TO-3 Through Hole 2Pins - 30hFE - 200°C - -
MJL21194G
MJL21194G - Transistor, NPN, TO264

SC06819

Transistor, NPN, TO264

ONSEMI

The MJL21194G is a NPN complementary Bipolar Power Transistor, utilize Perforated Emitter technology. Designed for high power audio output, disk head positioners and other linear applications. • Complement to MJL21193G • Excellent Gain Linearity • Total Ha...

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NPN - 250V - 16A 200W TO-264 Through Hole 3Pins 4MHz 75hFE - 150°C - -
ZTX451
ZTX451 - Transistor, NPN, E-Line

SC10972

Transistor, NPN, E-Line

DIODES INC.

The ZTX451 is a NPN silicon planar medium power Bipolar Transistor offers 1A continuous collector current and 80V collector-base voltage. • -55 to 200°C Operating temperature range

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NPN - 60V - 1A 1W E-Line Through Hole 3Pins 150MHz 50hFE - 200°C - -
BC109C
BC109C - Transistor, NPN, TO18

SC06719

Transistor, NPN, TO18

MULTICOMP PRO

The BC109C from Multicomp Pro are through hole, NPN low power, silicon planar epitaxial transistors in TO-18 metal can package. This device is used for switching and amplification. • Collector emitter voltage (Vce) of 25V • Continuous collector current (Ic...

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NPN - 25V - 200mA 600mW TO-18 Through Hole 3Pins 150MHz 800hFE - 200°C Multicomp Pro Bipolar Single Transistors NPN -
PMBT4403
PMBT4403 - Transistor, PNP SOT23

SC06611

Transistor, PNP SOT23

NXP

• Transistor Polarity : PNP • Collector Emitter Voltage Max : 40V • Continuous Collector Current : 600mA • Power Dissipation : 250mW • Transistor Case Style : SOT-23 • Transistor Mounting : Surface Mount • No. of Pins : 3Pins • Transition Frequency : 250MHz • DC Current Gain hFE Min : 100hFE • Operating Temperature Max : 150°C

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PNP - 40V - 600mA 250mW SOT-23 Surface Mount 3Pins 250MHz 100hFE - 150°C - -
BSX20
BSX20 - Transistor, NPN, TO18

SC06709

Transistor, NPN, TO18

MULTICOMP PRO

The BSX20 is a 15V Silicon NPN Bipolar Planar Low Power Transistor designed for high speed saturated switching applications. • Collector-base voltage(Vcbo = 40V) • Emitter-base voltage(Vebo = 4.5V) • Multicomp Pro products are rated 4.6 out of 5 stars • 12...

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NPN - 15V - 500mA 360mW TO-18 Through Hole 3Pins 500MHz 40hFE - 200°C Multicomp Pro Bipolar Transistors NPN -
ZTX753.
ZTX753. - PNP 120V 2A 1W

SCZTX753

PNP 120V 2A 1W

DIODES INC.

• Transistor Polarity : PNP • Collector Emitter Voltage Max : 100V • Continuous Collector Current : 2A • Power Dissipation : 1W • Transistor Case Style : E-Line • Transistor Mounting : Through Hole • No. of Pins : 3Pins • Transition Frequency : 140MHz • DC Current Gain hFE Min : 100hFE • Operating Temperature Max : 200°C

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PNP - 100V - 2A 1W E-Line Through Hole 3Pins 140MHz 100hFE - 200°C - -
BC337
BC337 - Transistor, NPN TO92

SC06661

Transistor, NPN TO92

MULTICOMP PRO

The BC337 is a NPN silicon Planar Epitaxial Transistor, suitable for use in driver and output stages of audio amplifier. • 200°C/W Junction to Ambient in Free Air Thermal Resistance • Multicomp Pro products are rated 4.6 out of 5 stars • 12 month limited w...

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NPN - 45V - 800mA 625mW TO-92 Through Hole 3Pins 100MHz 100hFE - 150°C - -
TIP42C
TIP42C - Transistor, PNP, TO220

SC07847

Transistor, PNP, TO220

MULTICOMP PRO

The TIP42C is a -100V PNP complementary silicon plastic Power Transistor designed for use in general purpose power amplifier and switching applications. • 100V Minimum collector-emitter sustaining voltage (VCEO (sus)) • 1.5V Maximum collector-emitter satur...

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PNP - 100V - 6A 65W TO-220 Through Hole 3Pins 3MHz 30hFE - 150°C - -
FMMT619
FMMT619 - Transistor, NPN, SOT23

SC06630

Transistor, NPN, SOT23

DIODES INC.

The FMMT619 from Diode Inc is a surface mount, 50V NPN silicon low saturation transistor in SOT-23 package. This transistor is moulded in plastic and "Green" moulding compound, terminal is matte tin finish. • Automotive grade AEC-Q101 qualified • UL recogn...

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NPN - 50V - 2A 625mW SOT-23 Surface Mount 3Pins 140MHz 450hFE - 150°C - -
FMMT720
FMMT720 - Transistor, PNP, SOT23

SC06633

Transistor, PNP, SOT23

DIODES INC.

The FMMT720 is a PNP silicon Low Saturation Transistor with tin-plated terminals, UL94V-0-flame rated moulded plastic case, solderable terminals as per MIL-STD-202, method 208 standard. • Complement to FMMT619 • Level-1 per J-STD-020 moisture sensitivity •...

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PNP - 40V - 1.5A 625mW SOT-23 Surface Mount 3Pins 190MHz 475hFE - 150°C - -
MJE340
MJE340 - Si-N 300V 0.5A 20W Vidpow

SC06487

Si-N 300V 0.5A 20W Vidpow

STMICROELECTRONICS

The MJE340 is a 300V Silicon Planar NPN Complementary Power Transistor intended for use in medium power linear and switching applications. Fast switching times and very low saturation voltage resulting in reduced switching and conduction losses. • Compleme...

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NPN - 300V - 500mA 20.8W TO-225AA Through Hole 3Pins - 240hFE - 150°C - -
BC817-16,215
BC817-16,215 - Transistor, NPN, SOT23

SC10625

Transistor, NPN, SOT23

NXP

• Transistor Polarity : NPN • Collector Emitter Voltage Max : 45V • Continuous Collector Current : 500mA • Power Dissipation : 250mW • Transistor Case Style : SOT-23 • No. of Pins : 3Pins • DC Current Gain hFE Min : 100hFE • Operating Temperature Max : 150°C

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NPN - 45V - 500mA 250mW SOT-23 - 3Pins - 100hFE - 150°C - -
MJ21193G
MJ21193G - Transistor, PNP, TO3

SC06826

Transistor, PNP, TO3

ONSEMI

The MJ21193G is a -250V Silicon PNP Bipolar Power Transistor that utilizes perforated emitter technology and is specifically designed for high power audio output, disk head positioners and linear applications. • Total harmonic distortion characterized • Hi...

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PNP - 250V - 16A 250W TO-3 Through Hole 3Pins 4MHz 75hFE - 200°C - -
FMMT617
FMMT617 - Transistor, NPN, SOT23

SC06628

Transistor, NPN, SOT23

DIODES INC.

The FMMT617 is a NPN silicon power switching Bipolar Transistor offers 625mW power dissipation and extremely low saturation voltage. • 12A Peak pulse current • Excellent hFE characteristics up to 12A • Extremely low equivalent on resistance • PNP complemen...

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NPN - 15V - 3A 625mW SOT-23 Surface Mount 3Pins 120MHz 450hFE - 150°C - -
ZTX450
ZTX450 - Transistor, NPN, E-Line

SC10969

Transistor, NPN, E-Line

DIODES INC.

ZTX450 is a through hole, NPN silicon planar medium power transistor in E-Line (TO-92 Compatible) package. • Collector to emitter voltage (Vce) of 45V • Collector to base voltage of 60V • Power dissipation (Pd) of 1W • Continuous collector current of 1A • ...

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NPN - 45V - 1A 1W E-Line Through Hole 3Pins 150MHz 100hFE - 200°C - -
BCX17
BCX17 - Transistor, PNP SOT23

SC06607

Transistor, PNP SOT23

NXP

The BCX17 is a PNP General Purpose Transistor housed in a plastic package. It is suitable for use with the saturated switching and driver applications, thick and thin-film circuits. • High current • Low voltage • NPN complement is BCX19 • T1 Marking code

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PNP - 45V - 500mA 250mW SOT-23 Surface Mount 3Pins - 100hFE - 150°C - -
TIP35C
TIP35C - Transistor, NPN, TO247, 100V, 3MHz, 125W, 25A

SC06791

Transistor, NPN, TO247, 100V, 3MHz, 125W, 25A

STMICROELECTRONICS

The TIP35C from STMicroelectronics is a through hole complementary power transistor in TO-247 package. This device manufactured in planar technology with “base island” layout resulting in exceptional high gain performance coupled with very low saturation v...

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NPN - 100V - 25A 125W TO-247 Through Hole 3Pins 3MHz 10hFE - 150°C - -
ZTX653.
ZTX653. - NPN 120V 2A 1W

SCZTX653

NPN 120V 2A 1W

DIODES INC.

• Transistor Polarity : NPN • Collector Emitter Voltage Max : 100V • Continuous Collector Current : 2A • Power Dissipation : 1W • Transistor Case Style : E-Line • Transistor Mounting : Through Hole • No. of Pins : 3Pins • Transition Frequency : 175MHz • Operating Temperature Max : 200°C

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NPN - 100V - 2A 1W E-Line Through Hole 3Pins 175MHz - - 200°C - -
BC857C
BC857C - Transistor, PNP, SOT23

SC06616

Transistor, PNP, SOT23

NXP

• Transistor Polarity : PNP • Collector Emitter Voltage Max : 45V • Continuous Collector Current : 100mA • Power Dissipation : 250mW • Transistor Case Style : SOT-23 • Transistor Mounting : Surface Mount • No. of Pins : 3Pins • DC Current Gain hFE Min : 420hFE • Operating Temperature Max : 150°C

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PNP - 45V - 100mA 250mW SOT-23 Surface Mount 3Pins - 420hFE - 150°C - -
2N5195G
2N5195G - Transistor, PNP, TO126

SC06743

Transistor, PNP, TO126

ONSEMI

The 2N5195G is a 4A silicon PNP Power Transistor designed for use in power amplifier and switching circuits and offers excellent safe area limits. • Complement to NPN 2N5191 and 2N5192

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PNP - 80V - 4A 40W TO-225 Through Hole 3Pins 2MHz 80hFE - 150°C - -
ZTX553
ZTX553 - Transistor, PNP, E-Line

SC10973

Transistor, PNP, E-Line

DIODES INC.

The ZTX553 is a PNP silicon planar medium power Bipolar Transistor offers -1A continuous collector current and -120V collector-base voltage. • -55 to 200°C Operating temperature range

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PNP - 100V - 1A 1W E-Line Through Hole 3Pins 150MHz 40hFE - 200°C - -
MJ15023G
MJ15023G - Transistor, PNP, TO3

SC06786

Transistor, PNP, TO3

ONSEMI

The MJ15023G is a -200V Silicon PNP Bipolar Power Transistor designed for high power audio, disk head positioners and other linear applications. • High DC current gain • High safe operating area • Collector-base voltage (Vcbo = 350V) • Emitter-base voltage...

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PNP - 200V - 16A 250W TO-3 Through Hole 2Pins 4MHz 60hFE - 200°C - -