Darlington Transistors

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Transistor Polarity Collector Emitter Voltage Max Collector Emitter Voltage V(br)ceo No. of Outputs Power Dissipation Pd Continuous Collector Current DC Collector Current Power Dissipation Transistor Case Style RF Transistor Case No. of Pins DC Current Gain hFE Transistor Mounting Transition Frequency DC Current Gain hFE Min Operating Temperature Max Product Range Qualification
 
 
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TIP120G
TIP120G - Bipolar (BJT) Single Transistor, NPN, 60V, 5A, 65W, TO-220

SC15979

Bipolar (BJT) Single Transistor, NPN, 60V, 5A, 65W, TO-220

ONSEMI

The TIP120G is a NPN Darlington bipolar Power Transistor, designed for general purpose amplifier and low-speed switching applications. • High DC current gain • Monolithic construction with built-in base-emitter shunt resistor

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NPN - 60V - 65W - 5A - TO-220 TO-220 3Pins 1000hFE Through Hole - - 150°C - AEC-Q101
TIP141
TIP141 - Darlington Transistor, TO247

SC06870

Darlington Transistor, TO247

MULTICOMP PRO

The TIP141 is a Darlington Transistor, designed for use in general-purpose amplifier and low speed switching applications. Collector-emitter sustaining voltage at 80V and power dissipation at 125W. • Monolithic construction with built-in base-emitter shunt...

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NPN - 80V - 125W - 10A - - TO-247 3Pins 1000hFE Through Hole - - 150°C - -
ULN2803A
ULN2803A - Darlington Array 8 NPN, 2803, DIP18

SC08607

Darlington Array 8 NPN, 2803, DIP18

STMICROELECTRONICS

The ULN2803A is an eight darlington array in 18 pin DIP package. Array contains eight darlington transistors with common emitters and integral suppression diodes for inductive loads. Each darlington features a peak load current rating of 600mA (500mA conti...

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NPN - 50V 8Outputs 2.25W - 500mA - - DIP 18Pins 1000hFE Through Hole - - 85°C Darlington Array -
BCX38C
BCX38C - Darlington Transistor, E-Line

SC06835

Darlington Transistor, E-Line

DIODES INC.

The BCX38C is a NPN silicon planar medium-power Darlington Transistor offers 80V collector-base voltage and 800mA continuous collector current. • -55 to 200°C Operating temperature range

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NPN - 60V - 1W - 800mA - - TO-92 3Pins 5000hFE Through Hole - - 200°C - -
BCV26
BCV26 - Transistor, PNP SOT23

SC06604

Transistor, PNP SOT23

ONSEMI

The BCV26 is a PNP Darlington Transistor designed for applications requiring extremely high current gain at currents to 800mA. • Sourced from Process 61 • -55 to 150°C Operating junction temperature range

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PNP - 30V - 350mW - 1.2A - - SOT-23 3Pins 10000hFE Surface Mount - - 150°C - -
BD679
BD679 - Darlington Transistor, TO126

SC06880

Darlington Transistor, TO126

STMICROELECTRONICS

The BD679 is a 60V Silicon NPN Complementary Power Darlington Transistor manufactured in planar base island technology with monolithic Darlington configuration. Monolithic Darlington configuration with integrated anti parallel collector-emitter diode. Fast...

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NPN - 80V - 40W - 4A - - SOT-32 3Pins 750hFE Through Hole - - 150°C - -
BCV27
BCV27 - Transistor, NPN SOT23

SC06621

Transistor, NPN SOT23

ONSEMI

The BCV27 is a NPN Darlington Transistor designed for applications requiring extremely high current gain at currents to 1A. • Sourced from Process 05 • -55 to 150°C Operating junction temperature range

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NPN - 30V - 350mW - 1.2A - - SOT-23 3Pins 4000hFE Surface Mount - - 150°C - -
MPSA14
MPSA14 - Darlington Transistor, TO92

SC10647

Darlington Transistor, TO92

MULTICOMP PRO

The MPSA14 is a NPN Darlington Transistor with 30V collector emitter voltage and 10V emitter base voltage. • -55 to 150°C Operating junction temperature range • Multicomp Pro products are rated 4.6 out of 5 stars • 12 month limited warranty *view Terms & C...

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NPN - 30V - 625mW - 1.2A - - TO-92 3Pins 20000hFE Through Hole - - 150°C Multicomp Pro Bipolar Transistors NPN -
TIP121
TIP121 - Power Transistor

SC06508

Power Transistor

STMICROELECTRONICS

The TIP121 is a complementary NPN Power Darlington Transistor with low collector-emitter saturation voltage. It is manufactured in planar technology with base island layout. The resulting transistor show exceptional high gain performance coupled with very ...

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NPN - 80V - 65W - 5A - - TO-220 3Pins 1000hFE Through Hole - - 150°C - -
ULN2804A
ULN2804A - Darlington Array 8 NPN, 2804, DIP18

SC08608

Darlington Array 8 NPN, 2804, DIP18

STMICROELECTRONICS

The ULN2804A from STMicroelectronics is a through hole eight darlington array in DIP package. Array contains eight darlington transistors with common emitters and integral suppression diodes for inductive loads. Each darlington features peak load current r...

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NPN - 50V - 2.25W - 500mA - - DIP 18Pins 1000hFE Through Hole - - 85°C - -
TIP112
TIP112 - Darlington Transistor, TO220

SC06861

Darlington Transistor, TO220

STMICROELECTRONICS

The TIP112 is a NPN complementary silicon epitaxial-base Power Transistor with monolithic Darlington configuration mounted in a JEDEC plastic package. It is intended for use in medium power linear and switching applications. • Integrated anti-parallel coll...

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NPN - 100V - 50W - 2A - - TO-220 3Pins 500hFE Through Hole - - 150°C - -
ZTX605
ZTX605 - Darlington Transistor, E-Line

SC06838

Darlington Transistor, E-Line

DIODES INC.

ZTX605 is a NPN silicon planar medium power Darlington transistor. • Collector-base voltage is 140V • Collector-emitter voltage is 120V • Emitter-base voltage is 10V • Peak pulse current is 4A • Continuous collector current is 1A • Power dissipation at Tam...

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NPN - 120V - 1W - 1A - - TO-92 3Pins 2000hFE Through Hole - - 200°C - -
MJ11015G
MJ11015G - Darlington Transistor, TO3

SC09920

Darlington Transistor, TO3

ONSEMI

The MJ11015G from On Semiconductor is a through hole, 30A, 120V PNP darlington bipolar power transistor in TO-204AA(TO-3) package. Features high DC current gain and monolithic construction with built-in base emitter shunt resistor. It functions as an outpu...

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PNP - 120V - 200W - 30A - - TO-3 2Pins 1000hFE Through Hole - - 200°C - -
ZTX614
ZTX614 - Darlington Transistor, E-Line

SC06839

Darlington Transistor, E-Line

DIODES INC.

The ZTX614 is a NPN silicon planar medium-power Darlington Transistor offers 800mA continuous collector current and 120V collector-base voltage. • Gain of 10K @ IC = 500mA • -55 to 200°C Operating temperature range

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NPN - 100V - 1W - 800mA - - TO-92 3Pins 10000hFE Through Hole - - 200°C - -
BDX33C
BDX33C - Darlington Transistor, TO220

SC06854

Darlington Transistor, TO220

STMICROELECTRONICS

The BDX33C is a NPN complementary silicon power Darlington Transistor with built-in epitaxial planar technology. Designed for use in power linear and switching applications. • Complement to BDX34C • 0.25A Base current

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NPN - 100V - 70W - 10A - - TO-220 3Pins 750hFE Through Hole - - 150°C - -
TIP102G
TIP102G - Darlington Transistor, TO220

SC06859

Darlington Transistor, TO220

ONSEMI

The TIP102G is a 8A NPN bipolar power Darlington Transistor designed for general-purpose amplifier and low speed switching applications. • Complementary device • Monolithic construction with built-in base-emitter shunt resistors

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NPN - 100V - 80W - 8A - - TO-220 3Pins 200hFE Through Hole - - 150°C - -
BU806
BU806 - Darlington Transistor, TO220

SC06858

Darlington Transistor, TO220

MULTICOMP PRO

The BU806 is a 200V NPN Darlington High Voltage Transistor for fast switching applications. • High current • Collector-emitter sustaining voltage (Vceo (sus) = 200V minimum) • Low collector-emitter saturation voltage • Multicomp Pro products are rated 4.6 ...

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NPN - 200V - 60W - 8A - - TO-220 3Pins 375hFE Through Hole - - 150°C - -
TIP120
TIP120 - Darlington Transistor, TO220

SC10999

Darlington Transistor, TO220

STMICROELECTRONICS

The TIP120 from STMicroelectronics is a through hole complementary power darlington transistor in TO-220 package. This device manufactured in planar technology with “base island” layout and monolithic darlington configuration resulting in exceptional high ...

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NPN - 60V - 65W - 5A - - TO-220 3Pins 1000hFE Through Hole - - 150°C - -
BDX34C
BDX34C - Darlington Transistor, TO220

SC10997

Darlington Transistor, TO220

STMICROELECTRONICS

The BDX34C is a -100V Silicon Epitaxial Base PNP Power Transistor in monolithic Darlington configuration. It is intended for use in power linear and switching applications. Fast switching times and very low saturation voltage resulting in reduced switching...

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PNP - 100V - 70W - 10A - - TO-220 3Pins 750hFE Through Hole - - 150°C - -
MJ11016G
MJ11016G - Darlington Transistor, TO3

SC06896

Darlington Transistor, TO3

ONSEMI

The MJ11016G is a 120V Silicon NPN Bipolar Darlington Power Transistor designed for use as output devices in complementary general purpose amplifier applications. The transistor has monolithic construction with built-in base-emitter shunt resistor. • High ...

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NPN - 120V - 200W - 30A - - TO-3 2Pins 200hFE Through Hole - - 200°C - -
BDV67B
BDV67B - Darlington Transistor, TO247

SC06869

Darlington Transistor, TO247

MULTICOMP PRO

The BDV67B is a NPN Darlington Transistor designed in monolithic construction with built-in base-emitter shunt resistor. • -65 to 150°C Operating junction temperature range • Multicomp Pro products are rated 4.6 out of 5 stars • 12 month limited warranty *...

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NPN - 100V - 125W - 16A - - TO-247 3Pins - Through Hole - - 150°C - -
TIP127
TIP127 - Darlington Transistor, Darlington, PNP, 100 V, 65 W, 5 A, TO-220, 3 Pins

SC06864

Darlington Transistor, Darlington, PNP, 100 V, 65 W, 5 A, TO-220, 3 Pins

STMICROELECTRONICS

The TIP127 is a NPN-PNP complementary power Darlington Transistor manufactured in Planar technology with "Base Island" layout and monolithic Darlington configuration. The resulting transistors show exceptional high gain performance coupled with very low sa...

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PNP - 100V - 65W - 5A - - TO-220 3Pins 1000hFE Through Hole - - 150°C - -
ZTX603
ZTX603 - Darlington Transistor, E-Line

SC10995

Darlington Transistor, E-Line

DIODES INC.

ZTX603 is a NPN silicon planar medium power Darlington transistor. • Collector-base voltage is 100V • Collector-emitter voltage is 80V • Emitter-base voltage is 10V • Peak pulse current is 4A • Continuous collector current is 1A • Power dissipation at Tamb...

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NPN - 80V - 1W - 1A - - TO-92 3Pins 2000hFE Through Hole - - 200°C - -
BDV66B
BDV66B - Darlington Transistor, TO247

SC06868

Darlington Transistor, TO247

MULTICOMP PRO

The BDV66B is a -100V Silicon PNP Complementary Darlington Power Transistor having monolithic construction with built-in base-emitter shunt resistor. • Collector-emitter sustaining voltage (Vceo (sus) = 100V minimum) • Collector-emitter saturation voltage(...

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PNP - 100V - 125W - 16A - - TO-247 3Pins - Through Hole - - 150°C - -
BD680
BD680 - Darlington Transistor, TO126

SC06882

Darlington Transistor, TO126

STMICROELECTRONICS

The BD680 is a PNP complementary power Darlington Transistor manufactured in Planar Base Island technology. It offers monolithic Darlington configuration with integrated anti-parallel collector-emitter diode. • Good hFE linearity • High fT frequency

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PNP - 80V - 40W - 4A - - SOT-32 3Pins 750hFE Through Hole - - 150°C - -