Darlington Transistors

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Transistor Polarity Collector Emitter Voltage V(br)ceo No. of Outputs Power Dissipation Pd DC Collector Current RF Transistor Case Transistor Case Style No. of Pins DC Current Gain hFE Transition Frequency Transistor Mounting Operating Temperature Max Product Range Qualification
 
 
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TIP120G
TIP120G - Bipolar (BJT) Single Transistor, NPN, 60V, 5A, 65W, TO-220

SC15979

Bipolar (BJT) Single Transistor, NPN, 60V, 5A, 65W, TO-220

ONSEMI

The TIP120G is a NPN Darlington bipolar Power Transistor, designed for general purpose amplifier and low-speed switching applications. • High DC current gain • Monolithic construction with built-in base-emitter shunt resistor

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NPN 60V - 65W 5A TO-220 TO-220 3Pins 1000hFE - Through Hole 150°C - AEC-Q101
TIP141
TIP141 - Darlington Transistor, TO247

SC06870

Darlington Transistor, TO247

MULTICOMP PRO

The TIP141 is a Darlington Transistor, designed for use in general-purpose amplifier and low speed switching applications. Collector-emitter sustaining voltage at 80V and power dissipation at 125W. • Monolithic construction with built-in base-emitter shunt...

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NPN 80V - 125W 10A TO-247 - 3Pins 1000hFE - Through Hole 150°C - -
ULN2803A
ULN2803A - Darlington Array 8 NPN, 2803, DIP18

SC08607

Darlington Array 8 NPN, 2803, DIP18

STMICROELECTRONICS

The ULN2803A is an eight darlington array in 18 pin DIP package. Array contains eight darlington transistors with common emitters and integral suppression diodes for inductive loads. Each darlington features a peak load current rating of 600mA (500mA conti...

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NPN 50V 8Outputs 2.25W 500mA DIP - 18Pins 1000hFE - Through Hole 85°C Darlington Array -
BCX38C
BCX38C - Darlington Transistor, E-Line

SC06835

Darlington Transistor, E-Line

DIODES INC.

The BCX38C is a NPN silicon planar medium-power Darlington Transistor offers 80V collector-base voltage and 800mA continuous collector current. • -55 to 200°C Operating temperature range

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NPN 60V - 1W 800mA TO-92 - 3Pins 5000hFE - Through Hole 200°C - -
BDX34C
BDX34C - Darlington Transistor, TO220

SC10997

Darlington Transistor, TO220

STMICROELECTRONICS

The BDX34C is a -100V Silicon Epitaxial Base PNP Power Transistor in monolithic Darlington configuration. It is intended for use in power linear and switching applications. Fast switching times and very low saturation voltage resulting in reduced switching...

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PNP 100V - 70W 10A TO-220 - 3Pins 750hFE - Through Hole 150°C - -
BD682G
BD682G - Darlington Transistor, TO126

SC06884

Darlington Transistor, TO126

ONSEMI

The BD682G is a PNP medium-power Darlington Transistor can be used as output device in complementary general-purpose amplifier applications. • Monolithic construction • Complementary with BD681

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PNP 100V - 40W 4A TO-225 - 3Pins 750hFE - Through Hole 150°C - -
ULN2002A
ULN2002A - Darlington Array 7 NPN, 2002, DIP16

SC08600

Darlington Array 7 NPN, 2002, DIP16

STMICROELECTRONICS

High-voltage, high-current darlington arrays each contains seven open collector darlington pairs with common emitters. Suitable for relay drivers, stepper and DC brushed motor drivers, lamp drivers, display drivers (LED and gas discharge), line drivers and...

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NPN 50V - - 500mA DIP - 16Pins 1000hFE - Through Hole 85°C - -
BD679
BD679 - Darlington Transistor, TO126

SC06880

Darlington Transistor, TO126

STMICROELECTRONICS

The BD679 is a 60V Silicon NPN Complementary Power Darlington Transistor manufactured in planar base island technology with monolithic Darlington configuration. Monolithic Darlington configuration with integrated anti parallel collector-emitter diode. Fast...

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NPN 80V - 40W 4A SOT-32 - 3Pins 750hFE - Through Hole 150°C - -
TIP142
TIP142 - Darlington Transistor, TO247

SC08145

Darlington Transistor, TO247

MULTICOMP PRO

The TIP142 from Multicomp Pro are through hole, darlington transistor in TO-247(3P) package. This transistor is used for low speed switching and amplification. • Collector emitter voltage (Vce) of 100V • Continuous collector current (Ic) of 10A • Power dis...

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NPN 100V - 125W 10A TO-247 - 3Pins 1000hFE - Through Hole 150°C Multicomp Pro Darlington Transistors -
BCV27
BCV27 - Transistor, NPN SOT23

SC06621

Transistor, NPN SOT23

ONSEMI

The BCV27 is a NPN Darlington Transistor designed for applications requiring extremely high current gain at currents to 1A. • Sourced from Process 05 • -55 to 150°C Operating junction temperature range

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NPN - - - - - - 3Pins 20000hFE - Surface Mount 150°C - -
MPSA14
MPSA14 - Darlington Transistor, TO92

SC10647

Darlington Transistor, TO92

MULTICOMP PRO

The MPSA14 is a NPN Darlington Transistor with 30V collector emitter voltage and 10V emitter base voltage. • -55 to 150°C Operating junction temperature range • Multicomp Pro products are rated 4.6 out of 5 stars • 12 month limited warranty *view Terms & C...

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NPN 30V - 625mW 1.2A TO-92 - 3Pins 20000hFE - Through Hole 150°C Multicomp Pro Bipolar Transistors NPN -
TIP112
TIP112 - Darlington Transistor, TO220

SC06861

Darlington Transistor, TO220

STMICROELECTRONICS

The TIP112 is a NPN complementary silicon epitaxial-base Power Transistor with monolithic Darlington configuration mounted in a JEDEC plastic package. It is intended for use in medium power linear and switching applications. • Integrated anti-parallel coll...

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NPN 100V - 50W 2A TO-220 - 3Pins 500hFE - Through Hole 150°C - -
ZTX605
ZTX605 - Darlington Transistor, E-Line

SC06838

Darlington Transistor, E-Line

DIODES INC.

The ZTX605 is a 120V Silicon NPN Planar Medium Power Darlington Transistor with 1W power dissipation. • Gain of 2K at Ic = 1A

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NPN 120V - 1W 1A TO-92 - 3Pins 2000hFE - Through Hole 200°C - -
ZTX705
ZTX705 - Darlington Transistor, E-Line

SC06840

Darlington Transistor, E-Line

DIODES INC.

The ZTX705 is a -120V E-Line Silicon PNP Planar Medium Power Darlington Transistor with silicone encapsulate that is rated to a much higher temperature than the common epoxies. It feature allows higher temperature operation, higher power rating and much hi...

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PNP - - - - - - 3Pins - - Through Hole 200°C - -
MJ11015G
MJ11015G - Darlington Transistor, TO3

SC09920

Darlington Transistor, TO3

ONSEMI

The MJ11015G from On Semiconductor is a through hole, 30A, 120V PNP darlington bipolar power transistor in TO-204AA(TO-3) package. Features high DC current gain and monolithic construction with built-in base emitter shunt resistor. It functions as an outpu...

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PNP 120V - 200W 30A TO-3 - 2Pins 1000hFE - Through Hole 200°C - -
TIP102G
TIP102G - Darlington Transistor, TO220

SC06859

Darlington Transistor, TO220

ONSEMI

The TIP102G is a 8A NPN bipolar power Darlington Transistor designed for general-purpose amplifier and low speed switching applications. • Complementary device • Monolithic construction with built-in base-emitter shunt resistors

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NPN 100V - 80W 8A TO-220 - 3Pins 200hFE - Through Hole 150°C - -
BU806
BU806 - Darlington Transistor, TO220

SC06858

Darlington Transistor, TO220

MULTICOMP PRO

The BU806 is a 200V NPN Darlington High Voltage Transistor for fast switching applications. • High current • Collector-emitter sustaining voltage (Vceo (sus) = 200V minimum) • Low collector-emitter saturation voltage • Multicomp Pro products are rated 4.6 ...

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NPN 200V - 60W 8A TO-220 - 3Pins 375hFE - Through Hole 150°C - -
TIP120
TIP120 - Darlington Transistor, TO220

SC10999

Darlington Transistor, TO220

STMICROELECTRONICS

The TIP120 from STMicroelectronics is a through hole complementary power darlington transistor in TO-220 package. This device manufactured in planar technology with “base island” layout and monolithic darlington configuration resulting in exceptional high ...

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NPN 60V - 65W 5A TO-220 - 3Pins 1000hFE - Through Hole 150°C - -
TIP121
TIP121 - Power Transistor

SC06508

Power Transistor

STMICROELECTRONICS

The TIP121 is a complementary NPN Power Darlington Transistor with low collector-emitter saturation voltage. It is manufactured in planar technology with base island layout. The resulting transistor show exceptional high gain performance coupled with very ...

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NPN 80V - 65W 5A TO-220 - 3Pins 1000hFE - Through Hole 150°C - -
ZTX614
ZTX614 - Darlington Transistor, E-Line

SC06839

Darlington Transistor, E-Line

DIODES INC.

The ZTX614 is a NPN silicon planar medium-power Darlington Transistor offers 800mA continuous collector current and 120V collector-base voltage. • Gain of 10K @ IC = 500mA • -55 to 200°C Operating temperature range

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NPN 100V - 1W 800mA TO-92 - 3Pins 10000hFE - Through Hole 200°C - -
BDX33C
BDX33C - Darlington Transistor, TO220

SC06854

Darlington Transistor, TO220

STMICROELECTRONICS

The BDX33C is a NPN complementary silicon power Darlington Transistor with built-in epitaxial planar technology. Designed for use in power linear and switching applications. • Complement to BDX34C • 0.25A Base current

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NPN 100V - 70W 10A TO-220 - 3Pins 750hFE - Through Hole 150°C - -
MJ11016G
MJ11016G - Darlington Transistor, TO3

SC06896

Darlington Transistor, TO3

ONSEMI

The MJ11016G is a 120V Silicon NPN Bipolar Darlington Power Transistor designed for use as output devices in complementary general purpose amplifier applications. The transistor has monolithic construction with built-in base-emitter shunt resistor. • High ...

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NPN 120V - 200W 30A TO-3 - 2Pins 200hFE - Through Hole 200°C - -
BDV67B
BDV67B - Darlington Transistor, TO247

SC06869

Darlington Transistor, TO247

MULTICOMP PRO

The BDV67B is a NPN Darlington Transistor designed in monolithic construction with built-in base-emitter shunt resistor. • -65 to 150°C Operating junction temperature range • Multicomp Pro products are rated 4.6 out of 5 stars • 12 month limited warranty *...

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NPN 100V - 125W 16A TO-247 - 3Pins - - Through Hole 150°C - -
TIP127
TIP127 - Darlington Transistor, Darlington, PNP, 100 V, 65 W, 5 A, TO-220, 3 Pins

SC06864

Darlington Transistor, Darlington, PNP, 100 V, 65 W, 5 A, TO-220, 3 Pins

STMICROELECTRONICS

The TIP127 is a NPN-PNP complementary power Darlington Transistor manufactured in Planar technology with "Base Island" layout and monolithic Darlington configuration. The resulting transistors show exceptional high gain performance coupled with very low sa...

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PNP 100V - 65W 5A TO-220 - 3Pins 1000hFE - Through Hole 150°C - -
BU323ZG
BU323ZG - Darlington Transistor, SOT93

SC06875

Darlington Transistor, SOT93

ONSEMI

The BU323ZG is a 350V Silicon NPN Bipolar Darlington Power Transistor with a built-in active Zener clamping circuit. The transistor is specifically designed for unclamped, inductive applications such as electronic ignition, switching regulators and motor c...

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NPN - - - - - - 3Pins - - Through Hole 175°C - -