Semiconductors - Discretes
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Manufacturer Part No | Order Code | Description / Manufacturer | Availability | Price For |
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Quantity | Zener Voltage Nom | Power Dissipation | Diode Case Style | No. of Pins | Operating Temperature Max | Diode Mounting | Product Range | Qualification | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MMSZ5240BT1G
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SC17934 |
Zener Single Diode, 10 V, 500 mW, SOD-123, 2 Pins, 150 °C, Surface Mount ONSEMI The MMSZ5221BT1 series surface mount Voltage Regulator Zener Diode designed for optimal automated board assembly. This device provides a convenient alternative to the leadless 34-package style. It comes with void free transfer-moulded thermosetting plastic...
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10V | 500mW | SOD-123 | 2Pins | 150°C | Surface Mount | MMSZ5221BT1 | AEC-Q101 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2N7002DW-7-F
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SC15992 |
Dual MOSFET, N Channel, 60V, 115mA, 13.5 Ohm, SOT-363, SMD DIODES INC. The 2N7002DW-7-F is a dual N-channel enhancement-mode MOSFET been designed to minimize the ON-state resistance RDS (ON) and yet maintain superior switching performance. It is ideal for high efficiency power management applications. • Low ON-resistance • Lo...
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- | - | - | 6Pins | 150°C | - | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
RB051L-40TE25
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SC17539 |
Small Signal Schottky Diode, Single, 40 V, 3 A, 450 mV, 70 A, 125 °C ROHM The RB051L-40TE25 is a surface mount silicon epitaxial planer Schottky Barrier Diode features small power mould type (PMDS) and high reliability. It is suitable for general rectification, PC, mobile phone and various portable electronics. It can also be us...
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5+ €0.2574 (€0.32) 20+ €0.1989 (€0.24) 100+ €0.1521 (€0.19) |
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- | - | SOD-106 | 2Pins | 125°C | Surface Mount | RB051 | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TIP47
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SC15380 |
Bipolar Transistor, NPN, 250V, 1A, TO-220 MULTICOMP PRO The TIP47 is a 250V Silicon NPN High Voltage Power Transistor designed for line operated audio output amplifier and switching power supply drivers applications. • Collector-emitter sustaining voltage (Vceo (sus) = 250 to 400V minimum) • Collector-base volt...
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1+ €0.585 (€0.72) 10+ €0.5148 (€0.63) 100+ €0.4563 (€0.56) |
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- | 40W | - | 3Pins | 150°C | - | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BC108B
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SC15809 |
Bipolar (BJT) Single Transistor, NPN, 25V, 200mA, 600mW, TO-18 MULTICOMP PRO The BC108B is a 25V Silicon NPN Bipolar Planar Epitaxial Transistor intended for general purpose amplifier or switches. • Low power • Collector-base voltage(Vcbo = 30V) • Emitter-base voltage(Vebo = 5V) • Multicomp Pro products are rated 4.6 out of 5 stars...
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1+ €0.468 (€0.58) 10+ €0.4095 (€0.50) 100+ €0.2925 (€0.36) |
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- | 600mW | - | 3Pins | 200°C | - | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRF7416TRPBF
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SC15957 |
Power MOSFET, P Channel, 30V, 10A, 0.02 Ohm, SOIC, SMD INFINEON • Power Dissipation : 2.5W • No. of Pins : 8Pins • Operating Temperature Max : 150°C • Product Range : HexFET
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- | 2.5W | - | 8Pins | 150°C | - | HexFET | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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FQPF27P06
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SC16932 |
Power MOSFET, P Channel, 60 V, 17 A, 0.055 ohm, TO-220F, Through Hole ONSEMI The FQPF27P06 is a -60V P-channel QFET® enhancement mode Power MOSFET is produced using planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance and to provide superior switching performa...
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1+ €1.2987 (€1.60) 10+ €1.1232 (€1.38) 100+ €0.9243 (€1.14) |
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- | 47W | - | 3Pins | 175°C | - | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MCC95-12IO8B
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SC17037 |
Thyristor Module, 116A, 1.2kV IXYS SEMICONDUCTOR The MCC95-12IO8B from IXYS Semiconductor is a 7 Pin 2 Switch Thyristor Module.
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1+ €26.3367 (€32.39) 3+ €23.3883 (€28.77) |
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- | - | - | 5Pins | 100°C | - | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IPB072N15N3GATMA1
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SC16960 |
Power MOSFET, N Channel, 150 V, 100 A, 0.0058 ohm, TO-263 (D2PAK), Surface Mount INFINEON The IPB072N15N3 G is an OptiMOS™ 3 N-channel Power Transistor with low resistance, excellent switching performance, increased efficiency, excellent gate charge x R DS (ON) product (FOM) and smallest board-space consumption. • Environment-friendly • High po...
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1+ €4.6449 (€5.71) 10+ €4.0014 (€4.92) 100+ €2.8431 (€3.50) |
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- | 300W | - | 3Pins | 175°C | - | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BT151-800R,127
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SC17054 |
Thyristor, 800V, 15mA, 7.5A, 12A, TO-220AB, 3 Pins WEEN SEMICONDUCTORS Planar passivated Silicon Controlled Rectifier (SCR) in a SOT78 plastic package intended for use in applications requiring high bidirectional blocking voltage capability, high surge current capability and high thermal cycling performance. • Suitable applic...
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1+ €0.5616 (€0.69) 10+ €0.4797 (€0.59) 100+ €0.4212 (€0.52) |
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- | - | - | 3Pins | 125°C | - | BT151 | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRFP4468PBF
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SC15830 |
Power MOSFET, N Channel, 100V, 290A, 0.002 ohm, TO-247AC, INFINEON The IRFP4468PBF is a 100V single N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using Trench MOSFET technology. Suitable for high efficiency synchronous rectification in SMPS, uninterruptible...
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1+ €5.9436 (€7.31) 10+ €4.914 (€6.04) 100+ €4.3875 (€5.40) |
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- | 520W | - | 3Pins | 175°C | - | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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KBP204G
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SC15511 |
Bridge Rectifier, Single Phase, 400 V, 2 A, SIP, 4 Pins, 1.1 V MULTICOMP PRO The KBP204G is a glass passivated Bridge Rectifier for printed circuit board. • Mounting any position • 280V Maximum RMS bridge input voltage • 400V Maximum DC blocking voltage • 60A Peak forward surge current • 10?A at 400V Maximum reverse current per ele...
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1+ €0.2808 (€0.35) 25+ €0.2106 (€0.26) 100+ €0.1872 (€0.23) |
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- | - | - | 4Pins | 150°C | - | KBP | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MBRS130LT3G
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SC17692 |
Schottky Rectifier, 30 V, 1 A, Single, DO-214AA (SMB), 2 Pins, 395 mV ONSEMI The MBRS130LT3G from On Semiconductor is surface mount "J" bent leaded schottky power rectifier in SMB (CASE 403A-03 ) package. It features epitaxial construction with highly stable oxide passivated junction and metal contact. This device is intended for u...
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- | - | DO-214AA (SMB) | 2Pins | 125°C | Surface Mount | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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UF5408-E3/54
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SC17869 |
Fast / Ultrafast Diode, 1 kV, 3 A, Single, 1.7 V, 75 ns, 150 A VISHAY The UF5408-E3/54 is a soft recovery ultrafast Plastic Rectifier with matte tin-plated leads terminals, UL94V-0 flame-rated moulding compound case. The plastic rectifier features glass passivated pallet chip junction, high forward surge capability, low swit...
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1+ €0.5265 (€0.65) 10+ €0.4914 (€0.60) 100+ €0.4095 (€0.50) |
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- | - | DO-201AD | - | 150°C | - | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SI2393DS-T1-GE3
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SC16883 |
SMD P Channel Power MOSFET, 30V, 7.5A, 0.0189 Ohm, SOT-23 VISHAY • TrenchFET® Gen IV P channel power MOSFET • 100% Rg and UIS tested
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1+ €0.4329 (€0.53) 10+ €0.3393 (€0.42) 100+ €0.2106 (€0.26) |
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- | 2.5W | - | 3Pins | 150°C | - | TrenchFET Gen IV | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BZX84-C24,215
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SC17886 |
Zener Single Diode, 24 V, 250 mW, SOT-23, 3 Pins, 150 °C, Surface Mount NEXPERIA The BZX84 series low-power voltage regulator Zener Diode encapsulated in a small SOT23 (TO-236AB) plastic surface-mounted device (SMD) package. It is suitable for general regulation functions. • ±1%, ±2% and ±5% Three tolerance series • 2.4 to 75V (E24 ran...
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24V | 250mW | SOT-23 | 3Pins | 150°C | Surface Mount | BZX84C | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BZT52C12
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SC17990 |
Zener Single Diode, 12 V, 500 mW, SOD-123, 2 Pins, 150 °C, Surface Mount DIODES INC. The BZT52C12 is a surface mount Zener Diode with moulded plastic case, matte tin annealed over Alloy 42 lead frame (lead-free plating) terminals and cathode band polarity. It is ideally suited for automated assembly processes. • Planar die construction • 5...
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12V | 500mW | SOD-123 | 2Pins | 150°C | Surface Mount | BZT52 | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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2SA2222SG
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SC15938 |
Bipolar (BJT) Single Transistor, PNP, -50V, -10A, 25W, SC-67 ONSEMI • Power Dissipation : 25W • No. of Pins : 3Pins • Operating Temperature Max : 150°C
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- | 25W | - | 3Pins | 150°C | - | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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PB3006-E3/45
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SC17441 |
Bridge Rectifier Diode, Single Phase, 600V, 30A, SIP, 1.1V, 4 Pins VISHAY The PB3006-E3/45 is an Enhanced isoCink+™ Bridge Rectifier with matte tin-plated leads terminals and UL94V-0 flame rated moulding compound case. The bridge rectifier features superior thermal conductivity and 600V maximum repetitive peak reverse voltage. P...
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1+ €2.4687 (€3.04) 10+ €1.9422 (€2.39) 100+ €1.7433 (€2.14) |
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- | - | - | 4Pins | 150°C | - | PB300 | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BSS138NH6327XTSA2
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SC15994 |
Power MOSFET, N Channel, 60V, 230mA, 2.2 Ohm, SOT-23, SMD INFINEON • 60V, 0.23A, N-channel SIPMOS® small signal transistor in 3 pin SOT-23 package • Enhancement mode • Logic level • dv/dt rated • Qualified according to AEC Q101
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- | 360mW | - | 3Pins | 150°C | - | - | AEC-Q101 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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TP0606N3-G
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SC16919 |
P Channel Power MOSFET, Vertical DMOS FET, 60V, 320mA, 3 Ohm, TO-92 MICROCHIP This low threshold, enhancement-mode (normally-off) transistor utilises a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors...
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1+ €0.6786 (€0.83) 10+ €0.5733 (€0.71) |
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- | 1W | - | 3Pins | 150°C | - | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SI2312CDS-T1-GE3
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SC16735 |
Power MOSFET, N Channel, 20 V, 6 A, 0.0265 ohm, SOT-23, Surface Mount VISHAY The SI2312CDS-T1-GE3 is a 20V N-channel TrenchFET® Power MOSFET. Suitable for DC to DC converters and load switch for portable applications. The surface-mounted LITTLE FOOT® power MOSFET uses integrated circuit and small-signal packages which have been mod...
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- | 1.25W | - | 3Pins | 150°C | - | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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2N6075BG
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SC17085 |
Triac, 600V, 4A, TO-225, 5mA, 2.5V, 10W LITTELFUSE The 2N6075BG is a sensitive gate TRIAC designed primarily for full‐wave AC control applications or wherever full‐wave silicon gate controlled solid‐state device is needed. This silicon bidirectional thyristor switches from a blocking to a conducting state ...
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- | - | - | 3Pins | 110°C | - | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BZX384-C8V2,115
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SC18023 |
Zener Single Diode, 8.2 V, 300 mW, SOD-323, 2 Pins, 150 °C, Surface Mount NEXPERIA The BZX384 series low-power voltage regulator Zener Diode encapsulated in a very small SOD323 (SC-76) plastic surface-mounted device (SMD) package. It is suitable for general regulation functions. • ±2% and ±5% Two tolerance series • 2.4 to 75V (E24 range)...
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8.2V | 300mW | SOD-323 | 2Pins | 150°C | Surface Mount | BZX384 Series | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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DMG2305UX-13
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SC16744 |
Power MOSFET, P Channel, 20V, 4.2A, 0.04 Ohm, SOT-23, SMD DIODES INC. DMG2305UX-13 is a P-channel enhancement mode MOSFET in a 3 pin SOT23 package. This MOSFET is designed to minimize on-state resistance (RDS(on)), yet maintain superior switching performance, making it ideal for high efficiency power management applications....
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- | 1.4W | - | 3Pins | 150°C | - | - | - |