Semiconductors - Discretes
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Manufacturer Part No | Order Code | Description / Manufacturer | Availability | Price For |
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Quantity | Diode Configuration | Repetitive Peak Reverse Voltage | Average Forward Current | Forward Voltage Max | Reverse Recovery Time | Forward Surge Current | Operating Temperature Max | Diode Case Style | No. of Pins | Diode Mounting | Product Range | Qualification | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MMBD1503A
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SC17875 |
Small Signal Diode, Single Pair Series, 200 V, 200 mA, 1.15 V, 2 A ONSEMI The MMBD1503A is a 3-pin high conductance low leakage Small Signal Diode offers the best available combination of quality. It is a Schottky rectifier that offers high reverse voltage (200V). This product is general usage and suitable for many different app...
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Single Pair Series | 200V | 200mA | 1.15V | - | 2A | 150°C | SOT-23 | 3Pins | Surface Mount | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BAT54S+
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SC17654 |
Small Signal Schottky Diode, Dual Series, 30 V, 200 mA, 400 mV, 600 mA, 125 °C MULTICOMP PRO The BAT54S is a small signal Schottky Barrier Diode with small outline plastic package case and matte tin (Sn) lead finish with nickel (Ni) under plate. It features fast switching speed. • Moisture sensitivity level 1 • Surface device type mounting • -55 t...
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Dual Series | 30V | 200mA | 400mV | 5ns | 600mA | 125°C | SOT-23 | 3Pins | Surface Mount | BAT54 | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MMBTA06LT1G
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SC16037 |
Bipolar (BJT) Single Transistor, NPN, 80V, 500mA, 225mW, SOT-23, SMD ONSEMI MMBTA06LT1G is a driver transistor. • Collector-emitter voltage is 80VDC min (IC = 1.0mAdc, IB = 0, TA = 25°C) • Emitter-base breakdown voltage is 4.0VDC min (IE = 100ADC, IC = 0, TA = 25°C • Collector current - continuous is 500mAdc • Electrostatic discha...
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- | - | - | - | - | - | 150°C | - | 3Pins | - | MMBTxxxx | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
FZT605
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SC16092 |
Bipolar (BJT) Single Transistor, Darlington, NPN, 120V, 1.5A, 2W, SOT-223, SMD DIODES INC. Silicon NPN Darlington transistor with matte tin plated leads solderable as per MIL-STD-202 standard, method 208. • Transistor is ideal for use in lamp, relay and solenoid driving • UL flammability rating 94V-0 • Qualified to AEC-Q101 Standards for High Re...
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- | - | - | - | - | - | 150°C | - | 3Pins | - | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BC161-16
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SC15812 |
Bipolar (BJT) Single Transistor, PNP, 60V, 1A, 800mW, TO-39 MULTICOMP PRO The BC161-16 is a -60V Silicon PNP Medium Power Transistor ideal for medium power amplifier and switching applications. • Collector-base voltage(Vcbo = 60V) • Emitter-base voltage(Vebo = 5V) • Multicomp Pro products are rated 4.6 out of 5 stars • 12 month ...
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1+ €0.8541 (€1.05) 10+ €0.5382 (€0.66) 100+ €0.3042 (€0.37) |
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- | - | - | - | - | - | 200°C | - | 3Pins | - | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SKKT 106/16 E
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SC17033 |
Thyristor Module, Series Connected, 106A, 1.6kV SEMIKRON SKKT 106/16 E is a SKKT 106 series SEMIPACK®1 thyristor / diode module. Typical application includes DC motor control (e.g for machine tools), AC motor soft starters, temperature control (e.g for ovens, chemical, processes), professional light dimming (stu...
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1+ €29.3319 (€36.08) 3+ €27.6354 (€33.99) |
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- | 1.6kV | 106A | - | - | - | 130°C | - | 7Pins | - | SEMIPACK Series | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MBRS260T3G
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SC17510 |
Schottky Rectifier, 60 V, 2 A, Single, DO-214AA (SMB), 2 Pins, 630 mV ONSEMI The MBRS260T3G is a surface-mount Schottky Power Rectifier with moulded epoxy case. It employs the Schottky barrier principle in a metal-to-silicon power rectifier. It features epitaxial construction with oxide passivation and metal overlay contact. It is ...
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Single | 60V | 2A | 630mV | - | 60A | 125°C | DO-214AA (SMB) | 2Pins | Surface Mount | MBRS2 | AEC-Q101 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BFR93AE6327HTSA1
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SC16012 |
Bipolar - RF Transistor, NPN, 12V, 6GHz, 300mW, 90mA, SOT-23 INFINEON • Operating Temperature Max : 150°C • No. of Pins : 3Pins
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- | - | - | - | - | - | 150°C | - | 3Pins | - | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BCP53-16,115
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SC16029 |
Bipolar (BJT) Single Transistor, PNP, -80V, -1A, 650mW, SOT-223, SMD NEXPERIA The BCP53 series 1A PNP Medium Power Transistor with three current gain selections. It offers exposed heat-sink for excellent thermal and electrical conductivity. • High current • High power dissipation capability • Leadless very small SMD plastic package ...
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- | - | - | - | - | - | 150°C | - | 4Pins | - | BCP53 | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BAS716,115
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SC17857 |
Small Signal Diode, Single, 85 V, 200 mA, 1.25 V, 3 µs, 4 A NEXPERIA The BAS716 is an epitaxial medium-speed Switching Diode with low leakage current and encapsulated in an ultra small SOD523 (SC-79) surface-mounted device (SMD) plastic package. It is used for low leakage current applications in surface-mounted circuits. • ...
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Single | 85V | 200mA | 1.25V | 3µs | 4A | 150°C | SOD-523 | 2Pins | Surface Mount | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BZV85-C33,113
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SC15593 |
Zener Single Diode, 33V, 1.3W, DO-41 (DO-204AL), 5%, 2-Pins, 200°C NEXPERIA The BZV85 series medium-power voltage regulator Zener Diode designed in a small hermetically sealed leaded SOD66 (DO-41) glass package. It is suitable for general regulation functions. • 1.3W Total power dissipation (maximum) • ±5% Tolerance series (approx...
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- | - | - | - | - | - | 200°C | DO-41 (DO-204AL) | 2Pins | Through Hole | BZV85 | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRFB4110PBF
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SC16958 |
Power MOSFET, N Channel, 100 V, 180 A, 0.0045 ohm, TO-220AB, Through Hole INFINEON The IRFB4110PBF is a 100V single N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using Trench MOSFET technology. Suitable for high efficiency synchronous rectification in SMPS, uninterruptible...
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1+ €2.8665 (€3.53) 10+ €2.4921 (€3.07) 100+ €2.0124 (€2.48) |
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- | - | - | - | - | - | 175°C | - | 3Pins | - | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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ZHCS400
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SC17677 |
Small Signal Schottky Diode, Single, 40V, 400mA, 500mV, 3A DIODES INC. • High current capability • Low forward voltage • 250mW Power dissipation
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Single | 40V | 400mA | 500mV | - | 3A | - | SOD-323 | 2Pins | - | ZHCS4 | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRFZ24NPBF
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SC16935 |
N Channel Power MOSFET, 55V, 17A, 0.07 Ohm, TO-220AB INFINEON Single N-channel HEXFET® power MOSFET. • Advanced process technology • Dynamic dv/dt rating • Fast switching • Fully avalanche rated • Planar cell structure for wide SOA • Product qualification according to JEDEC standard • High-current rating • Increased ...
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1+ €0.5967 (€0.73) 10+ €0.5382 (€0.66) 100+ €0.4329 (€0.53) |
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- | - | - | - | - | - | 175°C | - | 3Pins | - | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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GF1A
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SC17743 |
Standard Recovery Diode, 50 V, 1 A, Single, 1 V, 2 µs, 30 A ONSEMI The GF1A is a general-purpose Glass-passivated Rectifier offers low forward voltage drop and high surge current capability. • Colour band denotes cathode end polarity • High current capability • Easy pick and place
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Single | 50V | 1A | 1V | 2µs | 30A | 175°C | DO-214AC (SMA) | 2Pins | - | GF1A | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BTA16-600BQ
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SC17077 |
Triac, 600V, 16A, TO-220, 50mA, 1V, 5W WEEN SEMICONDUCTORS Planar passivated four quadrant triac in a SOT78D (IITO-220) internally insulated plastic package intended for use in general purpose bidirectional switching and phase control applications. • Suitable for: Applications subject to high temperature (Tj(max) ...
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1+ €0.7488 (€0.92) 10+ €0.585 (€0.72) 100+ €0.4563 (€0.56) |
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- | - | - | - | - | - | 150°C | - | 3Pins | - | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRF7342TRPBF
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SC16807 |
Dual MOSFET, P Channel, 55V, 3.4A, 0.095 Ohm, SOIC, SMD INFINEON The IRF7342TRPBF is a dual P-channel MOSFET utilizes advanced processing techniques to achieve the lowest possible ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device. The HEXFET Power MOSFET is extreme...
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- | - | - | - | - | - | 150°C | - | 8Pins | - | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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PMEG10010ELRX
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SC17634 |
Schottky Rectifier, 100 V, 1 A, Single, SOD-123W, 2 Pins, 770 mV NEXPERIA The PMEG10010ELR is a low leakage current planar maximum efficiency general application (MEGA) Schottky Barrier Rectifier with an integrated guard ring for stress protection. It is encapsulated in a small and flat lead surface-mounted device (SMD) plastic ...
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Single | 100V | 1A | 770mV | - | 50A | 175°C | SOD-123W | 2Pins | Surface Mount | PMEG1 | AEC-Q101 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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W04G
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SC15516 |
Bridge Rectifier, Single Phase, 400 V, 1.5 A, Through Hole, 4 Pins, 1.1 V MULTICOMP PRO • Multicomp Pro products are rated 4.6 out of 5 stars • 12 month limited warranty *view Terms & Conditions for details • 96% of customers would recommend to a friend
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- | 400V | 1.5A | 1.1V | - | 40A | 150°C | - | 4Pins | - | WOXG | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BSS138PS,115
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SC15997 |
Dual MOSFET, N Channel, 60V, 320mA, 0.9 Ohm, SOT-363, SMD NEXPERIA The BSS138PS is a dual N-channel enhancement-mode FET in a surface-mount plastic package using Trench MOSFET technology. It is suitable for relay driver, high-speed line driver, low-side load-switch and switching circuit applications. • Logic-level compati...
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- | - | - | - | - | - | 150°C | - | 6Pins | - | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC807-25
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SC16071 |
Bipolar (BJT) Single Transistor, PNP, -45V, -500mA, 310mW, SOT-23, SMD DIODES INC. The BC807-25 is a PNP small signal Bipolar Transistor ideally suitable for automatic insertion, switching and AF amplifier applications. • UL94V-0 Flammability rating • Epitaxial planar die construction • BC817 Complementary NPN type • Halogen-free, Green ...
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- | - | - | - | - | - | 150°C | - | 3Pins | - | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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2SA1943OTU
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SC15776 |
Bipolar (BJT) Single Transistor, PNP, -250V, -17A, 150W, TO-264 ONSEMI The 2SA1943OTU is a PNP epitaxial Silicon Transistor with excellent gain linearity for low THD, high current capability and high power dissipation. • High voltage • High frequency • Complement to 2SC5200/FJL4315
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- | - | - | - | - | - | 150°C | - | 3Pins | - | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MMSZ4679T1G
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SC17965 |
Zener Single Diode, 2 V, 500 mW, SOD-123, 2 Pins, 150 °C, Surface Mount ONSEMI MMSZ4679T1G is a MMSZ4xxxT1G series zener voltage regulator. It is offered in a convenient, surface-mount plastic package. This device provides a convenient alternative to the leadless 34 package style. • Zener voltage range from 1.90 to 2.10V (TA = 25°C, ...
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- | - | - | - | - | - | 150°C | SOD-123 | 2Pins | Surface Mount | MMSZ4xxxT1G | AEC-Q101 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MJD122G
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SC16026 |
Bipolar (BJT) Single Transistor, NPN, 100V, 8A, 1.75W, TO-252 (DPAK), SMD ONSEMI The MJD122G is a 100V Silicon NPN Bipolar Complementary Darlington Power Transistor designed for general purpose amplifier and low speed switching applications. Thins transistor is surface mount replacements for 2N6040-2N6045 series, TIP120-TIP122 series a...
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- | - | - | - | - | - | 150°C | - | 3Pins | - | - | AEC-Q101 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC856ALT1G
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SC16053 |
Bipolar (BJT) Single Transistor, PNP, -65 , -100mA, 225mW, SOT-23 ONSEMI The BC856ALT1G is a PNP general purpose Bipolar Transistor designed for use in linear and switching applications. The device is housed in the package which is designed for lower power surface-mount applications. • AEC-Q101 qualified and PPAP capable
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- | - | - | - | - | - | 150°C | - | 3Pins | - | BCxxx | AEC-Q101 |