Semiconductors - Discretes

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Diode Configuration Repetitive Peak Reverse Voltage Average Forward Current Forward Voltage Max Reverse Recovery Time Forward Surge Current Operating Temperature Max Diode Case Style No. of Pins Diode Mounting Product Range Qualification
 
 
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MMBD1503A
MMBD1503A - Small Signal Diode, Single Pair Series, 200 V, 200 mA, 1.15 V, 2 A

SC17875

Small Signal Diode, Single Pair Series, 200 V, 200 mA, 1.15 V, 2 A

ONSEMI

The MMBD1503A is a 3-pin high conductance low leakage Small Signal Diode offers the best available combination of quality. It is a Schottky rectifier that offers high reverse voltage (200V). This product is general usage and suitable for many different app...

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Single Pair Series 200V 200mA 1.15V - 2A 150°C SOT-23 3Pins Surface Mount - -
BAT54S+
BAT54S+ - Small Signal Schottky Diode, Dual Series, 30 V, 200 mA, 400 mV, 600 mA, 125 °C

SC17654

Small Signal Schottky Diode, Dual Series, 30 V, 200 mA, 400 mV, 600 mA, 125 °C

MULTICOMP PRO

The BAT54S is a small signal Schottky Barrier Diode with small outline plastic package case and matte tin (Sn) lead finish with nickel (Ni) under plate. It features fast switching speed. • Moisture sensitivity level 1 • Surface device type mounting • -55 t...

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Dual Series 30V 200mA 400mV 5ns 600mA 125°C SOT-23 3Pins Surface Mount BAT54 -
MMBTA06LT1G
MMBTA06LT1G - Bipolar (BJT) Single Transistor, NPN, 80V, 500mA, 225mW, SOT-23, SMD

SC16037

Bipolar (BJT) Single Transistor, NPN, 80V, 500mA, 225mW, SOT-23, SMD

ONSEMI

MMBTA06LT1G is a driver transistor. • Collector-emitter voltage is 80VDC min (IC = 1.0mAdc, IB = 0, TA = 25°C) • Emitter-base breakdown voltage is 4.0VDC min (IE = 100ADC, IC = 0, TA = 25°C • Collector current - continuous is 500mAdc • Electrostatic discha...

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- - - - - - 150°C - 3Pins - MMBTxxxx -
FZT605
FZT605 - Bipolar (BJT) Single Transistor, Darlington, NPN, 120V, 1.5A, 2W, SOT-223, SMD

SC16092

Bipolar (BJT) Single Transistor, Darlington, NPN, 120V, 1.5A, 2W, SOT-223, SMD

DIODES INC.

Silicon NPN Darlington transistor with matte tin plated leads solderable as per MIL-STD-202 standard, method 208. • Transistor is ideal for use in lamp, relay and solenoid driving • UL flammability rating 94V-0 • Qualified to AEC-Q101 Standards for High Re...

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- - - - - - 150°C - 3Pins - - -
BC161-16
BC161-16 - Bipolar (BJT) Single Transistor, PNP, 60V, 1A, 800mW, TO-39

SC15812

Bipolar (BJT) Single Transistor, PNP, 60V, 1A, 800mW, TO-39

MULTICOMP PRO

The BC161-16 is a -60V Silicon PNP Medium Power Transistor ideal for medium power amplifier and switching applications. • Collector-base voltage(Vcbo = 60V) • Emitter-base voltage(Vebo = 5V) • Multicomp Pro products are rated 4.6 out of 5 stars • 12 month ...

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- - - - - - 200°C - 3Pins - - -
SKKT 106/16 E
SKKT 106/16 E - Thyristor Module, Series Connected, 106A, 1.6kV

SC17033

Thyristor Module, Series Connected, 106A, 1.6kV

SEMIKRON

SKKT 106/16 E is a SKKT 106 series SEMIPACK®1 thyristor / diode module. Typical application includes DC motor control (e.g for machine tools), AC motor soft starters, temperature control (e.g for ovens, chemical, processes), professional light dimming (stu...

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- 1.6kV 106A - - - 130°C - 7Pins - SEMIPACK Series -
MBRS260T3G
MBRS260T3G - Schottky Rectifier, 60 V, 2 A, Single, DO-214AA (SMB), 2 Pins, 630 mV

SC17510

Schottky Rectifier, 60 V, 2 A, Single, DO-214AA (SMB), 2 Pins, 630 mV

ONSEMI

The MBRS260T3G is a surface-mount Schottky Power Rectifier with moulded epoxy case. It employs the Schottky barrier principle in a metal-to-silicon power rectifier. It features epitaxial construction with oxide passivation and metal overlay contact. It is ...

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Single 60V 2A 630mV - 60A 125°C DO-214AA (SMB) 2Pins Surface Mount MBRS2 AEC-Q101
BFR93AE6327HTSA1
BFR93AE6327HTSA1 - Bipolar - RF Transistor, NPN, 12V, 6GHz, 300mW, 90mA, SOT-23

SC16012

Bipolar - RF Transistor, NPN, 12V, 6GHz, 300mW, 90mA, SOT-23

INFINEON

• Operating Temperature Max : 150°C • No. of Pins : 3Pins

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- - - - - - 150°C - 3Pins - - -
BCP53-16,115
BCP53-16,115 - Bipolar (BJT) Single Transistor, PNP, -80V, -1A, 650mW, SOT-223, SMD

SC16029

Bipolar (BJT) Single Transistor, PNP, -80V, -1A, 650mW, SOT-223, SMD

NEXPERIA

The BCP53 series 1A PNP Medium Power Transistor with three current gain selections. It offers exposed heat-sink for excellent thermal and electrical conductivity. • High current • High power dissipation capability • Leadless very small SMD plastic package ...

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- - - - - - 150°C - 4Pins - BCP53 -
BAS716,115
BAS716,115 - Small Signal Diode, Single, 85 V, 200 mA, 1.25 V, 3 µs, 4 A

SC17857

Small Signal Diode, Single, 85 V, 200 mA, 1.25 V, 3 µs, 4 A

NEXPERIA

The BAS716 is an epitaxial medium-speed Switching Diode with low leakage current and encapsulated in an ultra small SOD523 (SC-79) surface-mounted device (SMD) plastic package. It is used for low leakage current applications in surface-mounted circuits. • ...

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Single 85V 200mA 1.25V 3µs 4A 150°C SOD-523 2Pins Surface Mount - -
BZV85-C33,113
BZV85-C33,113 - Zener Single Diode, 33V, 1.3W, DO-41 (DO-204AL), 5%, 2-Pins, 200°C

SC15593

Zener Single Diode, 33V, 1.3W, DO-41 (DO-204AL), 5%, 2-Pins, 200°C

NEXPERIA

The BZV85 series medium-power voltage regulator Zener Diode designed in a small hermetically sealed leaded SOD66 (DO-41) glass package. It is suitable for general regulation functions. • 1.3W Total power dissipation (maximum) • ±5% Tolerance series (approx...

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- - - - - - 200°C DO-41 (DO-204AL) 2Pins Through Hole BZV85 -
IRFB4110PBF
IRFB4110PBF - Power MOSFET, N Channel, 100 V, 180 A, 0.0045 ohm, TO-220AB, Through Hole

SC16958

Power MOSFET, N Channel, 100 V, 180 A, 0.0045 ohm, TO-220AB, Through Hole

INFINEON

The IRFB4110PBF is a 100V single N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using Trench MOSFET technology. Suitable for high efficiency synchronous rectification in SMPS, uninterruptible...

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- - - - - - 175°C - 3Pins - - -
ZHCS400
ZHCS400 - Small Signal Schottky Diode, Single, 40V, 400mA, 500mV, 3A

SC17677

Small Signal Schottky Diode, Single, 40V, 400mA, 500mV, 3A

DIODES INC.

• High current capability • Low forward voltage • 250mW Power dissipation

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Single 40V 400mA 500mV - 3A - SOD-323 2Pins - ZHCS4 -
IRFZ24NPBF
IRFZ24NPBF - N Channel Power MOSFET, 55V, 17A, 0.07 Ohm, TO-220AB

SC16935

N Channel Power MOSFET, 55V, 17A, 0.07 Ohm, TO-220AB

INFINEON

Single N-channel HEXFET® power MOSFET. • Advanced process technology • Dynamic dv/dt rating • Fast switching • Fully avalanche rated • Planar cell structure for wide SOA • Product qualification according to JEDEC standard • High-current rating • Increased ...

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- - - - - - 175°C - 3Pins - - -
GF1A
GF1A - Standard Recovery Diode, 50 V, 1 A, Single, 1 V, 2 µs, 30 A

SC17743

Standard Recovery Diode, 50 V, 1 A, Single, 1 V, 2 µs, 30 A

ONSEMI

The GF1A is a general-purpose Glass-passivated Rectifier offers low forward voltage drop and high surge current capability. • Colour band denotes cathode end polarity • High current capability • Easy pick and place

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Single 50V 1A 1V 2µs 30A 175°C DO-214AC (SMA) 2Pins - GF1A -
BTA16-600BQ
BTA16-600BQ - Triac, 600V, 16A, TO-220, 50mA, 1V, 5W

SC17077

Triac, 600V, 16A, TO-220, 50mA, 1V, 5W

WEEN SEMICONDUCTORS

Planar passivated four quadrant triac in a SOT78D (IITO-220) internally insulated plastic package intended for use in general purpose bidirectional switching and phase control applications. • Suitable for: Applications subject to high temperature (Tj(max) ...

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- - - - - - 150°C - 3Pins - - -
IRF7342TRPBF
IRF7342TRPBF - Dual MOSFET, P Channel, 55V, 3.4A, 0.095 Ohm, SOIC, SMD

SC16807

Dual MOSFET, P Channel, 55V, 3.4A, 0.095 Ohm, SOIC, SMD

INFINEON

The IRF7342TRPBF is a dual P-channel MOSFET utilizes advanced processing techniques to achieve the lowest possible ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device. The HEXFET Power MOSFET is extreme...

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- - - - - - 150°C - 8Pins - - -
PMEG10010ELRX
PMEG10010ELRX - Schottky Rectifier, 100 V, 1 A, Single, SOD-123W, 2 Pins, 770 mV

SC17634

Schottky Rectifier, 100 V, 1 A, Single, SOD-123W, 2 Pins, 770 mV

NEXPERIA

The PMEG10010ELR is a low leakage current planar maximum efficiency general application (MEGA) Schottky Barrier Rectifier with an integrated guard ring for stress protection. It is encapsulated in a small and flat lead surface-mounted device (SMD) plastic ...

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Single 100V 1A 770mV - 50A 175°C SOD-123W 2Pins Surface Mount PMEG1 AEC-Q101
W04G
W04G - Bridge Rectifier, Single Phase, 400 V, 1.5 A, Through Hole, 4 Pins, 1.1 V

SC15516

Bridge Rectifier, Single Phase, 400 V, 1.5 A, Through Hole, 4 Pins, 1.1 V

MULTICOMP PRO

• Multicomp Pro products are rated 4.6 out of 5 stars • 12 month limited warranty *view Terms & Conditions for details • 96% of customers would recommend to a friend

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- 400V 1.5A 1.1V - 40A 150°C - 4Pins - WOXG -
BSS138PS,115
BSS138PS,115 - Dual MOSFET, N Channel, 60V, 320mA, 0.9 Ohm, SOT-363, SMD

SC15997

Dual MOSFET, N Channel, 60V, 320mA, 0.9 Ohm, SOT-363, SMD

NEXPERIA

The BSS138PS is a dual N-channel enhancement-mode FET in a surface-mount plastic package using Trench MOSFET technology. It is suitable for relay driver, high-speed line driver, low-side load-switch and switching circuit applications. • Logic-level compati...

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- - - - - - 150°C - 6Pins - - -
BC807-25
BC807-25 - Bipolar (BJT) Single Transistor, PNP, -45V, -500mA, 310mW, SOT-23, SMD

SC16071

Bipolar (BJT) Single Transistor, PNP, -45V, -500mA, 310mW, SOT-23, SMD

DIODES INC.

The BC807-25 is a PNP small signal Bipolar Transistor ideally suitable for automatic insertion, switching and AF amplifier applications. • UL94V-0 Flammability rating • Epitaxial planar die construction • BC817 Complementary NPN type • Halogen-free, Green ...

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- - - - - - 150°C - 3Pins - - -
2SA1943OTU
2SA1943OTU - Bipolar (BJT) Single Transistor, PNP, -250V, -17A, 150W, TO-264

SC15776

Bipolar (BJT) Single Transistor, PNP, -250V, -17A, 150W, TO-264

ONSEMI

The 2SA1943OTU is a PNP epitaxial Silicon Transistor with excellent gain linearity for low THD, high current capability and high power dissipation. • High voltage • High frequency • Complement to 2SC5200/FJL4315

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- - - - - - 150°C - 3Pins - - -
MMSZ4679T1G
MMSZ4679T1G - Zener Single Diode, 2 V, 500 mW, SOD-123, 2 Pins, 150 °C, Surface Mount

SC17965

Zener Single Diode, 2 V, 500 mW, SOD-123, 2 Pins, 150 °C, Surface Mount

ONSEMI

MMSZ4679T1G is a MMSZ4xxxT1G series zener voltage regulator. It is offered in a convenient, surface-mount plastic package. This device provides a convenient alternative to the leadless 34 package style. • Zener voltage range from 1.90 to 2.10V (TA = 25°C, ...

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- - - - - - 150°C SOD-123 2Pins Surface Mount MMSZ4xxxT1G AEC-Q101
MJD122G
MJD122G - Bipolar (BJT) Single Transistor, NPN, 100V, 8A, 1.75W, TO-252 (DPAK), SMD

SC16026

Bipolar (BJT) Single Transistor, NPN, 100V, 8A, 1.75W, TO-252 (DPAK), SMD

ONSEMI

The MJD122G is a 100V Silicon NPN Bipolar Complementary Darlington Power Transistor designed for general purpose amplifier and low speed switching applications. Thins transistor is surface mount replacements for 2N6040-2N6045 series, TIP120-TIP122 series a...

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- - - - - - 150°C - 3Pins - - AEC-Q101
BC856ALT1G
BC856ALT1G - Bipolar (BJT) Single Transistor, PNP, -65 , -100mA, 225mW, SOT-23

SC16053

Bipolar (BJT) Single Transistor, PNP, -65 , -100mA, 225mW, SOT-23

ONSEMI

The BC856ALT1G is a PNP general purpose Bipolar Transistor designed for use in linear and switching applications. The device is housed in the package which is designed for lower power surface-mount applications. • AEC-Q101 qualified and PPAP capable

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- - - - - - 150°C - 3Pins - BCxxx AEC-Q101