Semiconductors - Discretes
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Quantity | Diode Configuration | Repetitive Peak Reverse Voltage | Average Forward Current | Forward Voltage Max | Reverse Recovery Time | Forward Surge Current | Operating Temperature Max | Diode Case Style | No. of Pins | Diode Mounting | Product Range | Qualification | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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1N4148 (DO-35)
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SC15554 |
Small Signal Diode, Single, 100 V, 150 mA, 1 V, 4 ns, 2 A MULTICOMP PRO Small signal diode in DO-35 package suitable for general purpose applications. • High speed silicon switching diodes, axial leaded • Hermetically sealed glass with stud on either side of glass passivated chip • Extremely low leakage and very high reliabili...
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Single | 100V | 150mA | 1V | 4ns | 2A | 200°C | DO-35 | 2Pins | Through Hole | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
ZXMN6A07FTA
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SC16749 |
Power MOSFET, N Channel, 60 V, 1.4 A, 0.25 ohm, SOT-23, Surface Mount DIODES INC. ZXMN6A07FTA is a N-channel enhancement mode MOSFET. This MOSFET utilizes a unique structure that combines the benefits of low on-resistance with a fast switching speed, making it ideal for high-efficiency power-management applications. Typical applications...
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- | - | - | - | - | - | 150°C | - | 3Pins | - | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BSS84W-7-F
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SC16773 |
Power MOSFET, P Channel, 50 V, 130 mA, 10 ohm, SOT-323, Surface Mount DIODES INC. The BSS84W-7-F is a P-channel enhancement-mode FET with moulded plastic case and solderable matte tin annealed over alloy 42 lead-frame terminals as per MIL-STD-202 standard. It is designed to minimize the ON-state resistance RDS (ON) and yet maintain supe...
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- | - | - | - | - | - | 150°C | - | 3Pins | - | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BZV55-B5V1,115
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SC18014 |
Zener Single Diode, 5.1 V, 400 mW, SOD-80 (MiniMELF), 2 Pins, 200 °C, Surface Mount NEXPERIA The BZV55 series low-power voltage regulator Zener Diode designed in a small hermetically sealed glass SOD80C surface-mounted device (SMD) package. It is suitable for general regulation functions. • ≤40W Non-repetitive peak reverse power dissipation • 2.4 ...
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- | - | - | - | - | - | 200°C | SOD-80 (MiniMELF) | 2Pins | Surface Mount | BZV55 Series | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
FDS9435A
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SC16915 |
Power MOSFET, P Channel, 30 V, 5.3 A, 0.042 ohm, SOIC, Surface Mount ONSEMI The FDS9435A is a -30V P-channel PowerTrench® MOSFET has been specially tailored to minimize the on-state resistance and to maintain low gate charge for superior switching performance. The medium voltage power MOSFET is optimized power switches combining s...
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- | - | - | - | - | - | 175°C | - | 8Pins | - | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SI4447ADY-T1-GE3
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SC16775 |
Power MOSFET, P Channel, 40 V, 7.2 A, 0.036 ohm, SOIC, Surface Mount VISHAY • 40V, 7.2A, P-channel TrenchFET® power MOSFET in 8 pin SOIC package • 100% Rg tested • 100 % UIS tested • Suitable for load switches, adaptor switch and notebook PCs
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- | - | - | - | - | - | 150°C | - | 8Pins | - | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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TN0702N3-G
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SC17007 |
N Channel Power MOSFET, 20V, 530mA, 1 Ohm, TO-92 MICROCHIP This low threshold, enhancement-mode (normally-off) transistor utilises a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors...
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- | - | - | - | - | - | 150°C | - | 3Pins | - | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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TYN1225RG
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SC17058 |
Thyristor, 1.2kV, 40mA, 16A, 25A, TO-220AB, 3 Pins STMICROELECTRONICS Standard 25A SCR suitable for general purpose applications. • Repetitive peak off-state voltage, VDRM/VRRM 600 to 1200V • Triggering gate current, IGT 40mA • UL1557 certified (file ref. E81734)
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1+ €2.9367 (€3.61) 10+ €2.808 (€3.45) 100+ €2.7144 (€3.34) |
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- | - | - | - | - | - | 125°C | - | 3Pins | - | TYN1225 | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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ES1G
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SC17759 |
Fast / Ultrafast Diode, 400 V, 1 A, Single, 1.3 V, 35 ns, 30 A ONSEMI The ES1G is a surface-mount Ultra-fast Recovery Rectifier with glass-passivated junction. • Colour band denotes cathode • Low-profile package • Easy pick and place • Built-in strain-relief • Superfast recovery times for high efficiency
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Single | 400V | 1A | 1.3V | 35ns | 30A | 150°C | DO-214AC (SMA) | - | - | ES1G | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC857BLT1G
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SC16057 |
Bipolar (BJT) Single Transistor, PNP, -45V, -100mA, 225mW, SOT-23 ONSEMI The BC857BLT1G is a -45V PNP silicon Bipolar Transistor designed for use in linear and switching applications. The device is suitable for lower power surface mount applications. • Halogen-free/BFR-free • -50V Collector to base voltage (VCBO) • -5V Emitter ...
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- | - | - | - | - | - | 150°C | - | 3Pins | - | BCxxx | AEC-Q101 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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STW45NM50
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SC15829 |
Power MOSFET, N Channel, 550V, 45A, 0.1 ohm, TO-247, STMICROELECTRONICS The STW45NM50 is a 550V N-channel Power MOSFET developed using revolutionary MDmesh™ technology, which associates the multiple drain process with the PowerMESH™ horizontal layout. This MOSFET offers extremely low on-resistance, high dv/dt and excellent ava...
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1+ €11.0331 (€13.57) 5+ €10.1205 (€12.45) 50+ €9.4302 (€11.60) |
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- | - | - | - | - | - | 150°C | - | 3Pins | - | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BAT54SW,115
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SC17480 |
Small Signal Schottky Diode, Dual Series, 30 V, 200 mA, 800 mV, 600 mA, 150 °C NEXPERIA The BAT54SW,115 is a planar Schottky Barrier Diode with an integrated guard ring for stress protection, low forward voltage and low capacitance. • 200mW Total power dissipation • 10pF Capacitance
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Dual Series | 30V | 200mA | 800mV | 5ns | 600mA | 150°C | SOT-323 | 3Pins | Surface Mount | BAT54 | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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S1A
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SC15538 |
Standard Recovery Diode, 50 V, 1 A, Single, 1.1 V, 30 A MULTICOMP PRO The S1x series from Multicomp Pro are surface mount standard recovery power diode in DO-214AC (SMA) package. This device features glass passivated junction, low forward voltage drop and high surge current capability. • Maximum repetitive reverse voltage Vr...
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Single | 50V | 1A | 1.1V | - | 30A | 150°C | DO-214AC (SMA) | 2Pins | - | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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1N753A
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SC15578 |
Zener Single Diode, 6.2 V, 500 mW, DO-35 (DO-204AH), 2 Pins, 200 °C, Through Hole MULTICOMP PRO The 1N753A is a Zener Diode features high reliability and very sharp reverse characteristics. This diode is suitable for voltage stabilization applications. • 1.5V at 200mA Forward voltage • 20mA for 7Ω Reverse current • 0.1µA at 1V Reverse leakage current...
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- | - | - | - | - | - | 200°C | DO-35 (DO-204AH) | 2Pins | Through Hole | 1N7 | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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NDS332P
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SC16872 |
Power MOSFET, P Channel, 20 V, 1 A, 0.3 ohm, SuperSOT, Surface Mount ONSEMI The NDS332P is a P-channel logic level enhancement-mode Power FET produced using high cell density DMOS technology. This very high density process is especially tailored to minimize ON-state resistance. It is particularly suited for low voltage application...
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- | - | - | - | - | - | 150°C | - | 3Pins | - | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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NTF2955T1G
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SC16880 |
SMD P Channel Power MOSFET, 60V, 2.6A, 0.17 Ohm, SOT-223 ONSEMI NTF2955T1G is a single, P-channel power MOSFET. The applications include power supplies, PWM motor control, converters, and power management. • Drain-to-source on resistance is 145mohm typ (VGS = -10V, ID = -0.75A) • Gate-to-source voltage is ±20V (TJ = 25...
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- | - | - | - | - | - | 175°C | - | 4Pins | - | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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VS-10MQ060NTRPBF
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SC17513 |
Schottky Rectifier, 60 V, 1 A, Single, DO-214AC (SMA), 2 Pins, 620 mV VISHAY The VS-10MQ060NTRPBF is a surface mount high performance Schottky Rectifier with guard ring for enhanced ruggedness and long term reliability. It is designed for applications requiring low forward drop and very small foot prints on PC boards. Typical appli...
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Single | 60V | 1A | 620mV | - | 120A | 150°C | DO-214AC (SMA) | 2Pins | Surface Mount | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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B140-13-F
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SC17566 |
Schottky Rectifier, 40 V, 1 A, Single, DO-214AC (SMA), 2 Pins, 500 mV DIODES INC. The B140-13-F is a surface mount Schottky Barrier Rectifier Diode with moulded plastic case. Suitable for low voltage, high frequency inverters, freewheeling and polarity protection applications. • Guard Ring Die Construction for Transient Protection • Low...
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Single | 40V | 1A | 500mV | - | 30A | 150°C | DO-214AC (SMA) | 2Pins | Surface Mount | B140 | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BT139-800,127
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SC17082 |
Triac, 800V, 16A, TO-220AB, 70mA, 1V, 5W WEEN SEMICONDUCTORS Planar passivated four quadrant triac in a SOT78 (TO-220AB) plastic package intended for use in applications requiring high bidirectional transient and blocking voltage capability and high thermal cycling performance. • Suitable for general purpose motor c...
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- | - | - | - | - | - | 125°C | - | 3Pins | - | BT139 | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRLML5103TRPBF
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SC16784 |
Power MOSFET, P Channel, 30 V, 600 mA, 0.6 ohm, µSOIC, Surface Mount INFINEON The IRLML5103TRPBF is a HEXFET® single P-channel Power MOSFET utilizes advanced processing techniques to achieve extremely low ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design, provides an ext...
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- | - | - | - | - | - | 150°C | - | 3Pins | - | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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1N4744A
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SC17957 |
Zener Single Diode, 15 V, 1.3 W, DO-41 (DO-204AL), 2 Pins, 200 °C, Through Hole VISHAY The 1N4744A is a silicon planar power Zener Diode for use in stabilizing and clipping circuits with high power rating. It is designed for voltage stabilization. • Standard Zener voltage tolerance is ±5% • AEC-Q101 qualified • Moisture sensitivity level 1 •...
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- | - | - | - | - | - | 200°C | DO-41 (DO-204AL) | 2Pins | Through Hole | 1N47xxA | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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PMEG4010BEA,115
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SC17676 |
Schottky Rectifier, 40 V, 1 A, Single, SOD-323, 2 Pins, 640 mV NEXPERIA The PMEG4010BEA is a very-low VF planar maximum efficiency general application (MEGA) Schottky Barrier Rectifier with an integrated guard ring for stress protection. It is encapsulated in a very small and ultra-small SMD plastic package. • High efficiency ...
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Single | 40V | 1A | 640mV | - | 10A | 150°C | SOD-323 | 2Pins | Surface Mount | PMEG Series | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BZX384-C10,115
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SC18016 |
Zener Single Diode, 10 V, 300 mW, SOD-323, 2 Pins, 150 °C, Surface Mount NEXPERIA The BZX384 series low-power voltage regulator Zener Diode encapsulated in a very small SOD323 (SC-76) plastic surface-mounted device (SMD) package. It is suitable for general regulation functions. • ±2% and ±5% Two tolerance series • 2.4 to 75V (E24 range)...
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- | - | - | - | - | - | 150°C | SOD-323 | 2Pins | Surface Mount | BZX384 Series | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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STPS5L60S
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SC17617 |
Schottky Rectifier, 60 V, 5 A, Single, DO-214AB (SMC), 2 Pins, 520 mV STMICROELECTRONICS The STPS5L60S is a power Schottky Rectifier Diode for switch mode power supplies and high frequency inverters. This device is intended for use in low voltage output for small battery chargers and consumer SMPS such as DVD and set-top-box. • Low Thermal Res...
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Single | 60V | 5A | 520mV | - | 150A | 150°C | DO-214AB (SMC) | 2Pins | Surface Mount | STPS5 | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BFR106E6327HTSA1
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SC15949 |
Bipolar RF Transistor, NPN, 16V, 5GHz, 700mW, 210mA, SOT-23 INFINEON • Low noise silicon bipolar RF transistor • High linearity low noise RF transistor • 22dBm OP1dB and 31dBm OIP3 at 900MHz, 8V, 70mA • For UHF/VHF applications • Driver for multistage amplifiers • For linear broadband and antenna amplifiers • Collector des...
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- | - | - | - | - | - | 150°C | - | 3Pins | - | - | AEC-Q101 |