Semiconductors - Discretes

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  Manufacturer Part No Order Code Description / Manufacturer
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Zener Voltage Nom Power Dissipation Diode Case Style No. of Pins Operating Temperature Max Diode Mounting Product Range Qualification
 
 
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1SMA5931BT3G
1SMA5931BT3G - Zener Single Diode, General Purpose, 18 V, 1.5 W, DO-214AC (SMA), 2 Pins, 150 °C, Surface Mount

SC17913

Zener Single Diode, General Purpose, 18 V, 1.5 W, DO-214AC (SMA), 2 Pins, 150 °C, Surface Mount

ONSEMI

The 1SMA59xxBT3G series surface mount Voltage Regulator Zener Diode with void free transfer-moulded plastic case. All external surfaces are corrosion-resistant and leads are readily solderable. • Standard Zener breakdown voltage range -3.3 to 68V • ESD rat...

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18V 1.5W DO-214AC (SMA) 2Pins 150°C Surface Mount 1SMA59xxBT3G AEC-Q101
MJ15003G
MJ15003G - Bipolar (BJT) Single Transistor, Audio, NPN, 140V, 20A, 250W, TO-3

SC15816

Bipolar (BJT) Single Transistor, Audio, NPN, 140V, 20A, 250W, TO-3

ONSEMI

The MJ15003G is a Power Transistor designed for high power audio, disk head positioners and other linear applications. High safe operating area and high DC current gain. Ideal for low distortion complementary designs. • 140VDC Collector-base voltage • 0.70...

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- 250W - 2Pins 200°C - - -
PBSS8110T,215
PBSS8110T,215 - Bipolar (BJT) Single Transistor, NPN, 100V, 1A, 300mW, SOT-23, SMD

SC16078

Bipolar (BJT) Single Transistor, NPN, 100V, 1A, 300mW, SOT-23, SMD

NEXPERIA

The PBSS8110T is a 1A NPN breakthrough-in small signal (BISS) Transistor housed in a surface-mount plastic package. • Low collector-emitter saturation voltage VCEsat • High collector current capability IC and ICM • Higher efficiency leading to less heat ge...

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- 300mW - 3Pins 150°C - - -
SSA33L-E3/61T
SSA33L-E3/61T - Schottky Rectifier, 30 V, 3 A, Single, DO-214AC (SMA), 2 Pins, 450 mV

SC17487

Schottky Rectifier, 30 V, 3 A, Single, DO-214AC (SMA), 2 Pins, 450 mV

VISHAY

The SSA33L-E3/5AT is a surface-mount high-current density Schottky Barrier Rectifier with solderable matte tin-plated terminals. It is suitable for use in low-voltage high-frequency inverters, free-wheeling, DC/DC converters and polarity protection applica...

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- - DO-214AC (SMA) 2Pins 150°C Surface Mount SSA33 -
BYG21M-E3/TR
BYG21M-E3/TR - Standard Recovery Diode, 1kV, 1.5A, Single, 1.6V, 120ns, 30A

SC17709

Standard Recovery Diode, 1kV, 1.5A, Single, 1.6V, 120ns, 30A

VISHAY

• Glass passivated pallet chip junction • Low reverse current • Soft recovery characteristic • Fast reverse recovery time

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- - DO-214AC (SMA) 2Pins 150°C - BYG21 -
W02G
W02G - Bridge Rectifier, Single Phase, 200 V, 1.5 A, Through Hole, 4 Pins, 1.1 V

SC15514

Bridge Rectifier, Single Phase, 200 V, 1.5 A, Through Hole, 4 Pins, 1.1 V

MULTICOMP PRO

W02G is a single-phase bridge rectifier designed for converting AC to DC. It features a reverse voltage rating of 200V and a current capacity of 1.5A, with a forward voltage drop of 1.1V. Housed in a through-hole package with 4 pins, it is ideal for use in...

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- - - 4Pins 150°C - WOXG -
2N6109
2N6109 - Bipolar Transistor, PNP, 50V, 7A, TO-220

SC15381

Bipolar Transistor, PNP, 50V, 7A, TO-220

MULTICOMP PRO

The 2N6109 is a -50V Silicon PNP Complementary Plastic Power Transistor designed for use in general purpose amplifier and switching applications. • DC current gain (hfe = 30 to 150 at Ic = 7A) • Collector-emitter sustaining voltage (Vceo (sus) = 50VDC mini...

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- 40W - 3Pins 150°C - - -
DMG1012T-7
DMG1012T-7 - Power MOSFET, N Channel, 20V, 630mA, 0.3 Ohm, SOT-523, SMD

SC16742

Power MOSFET, N Channel, 20V, 630mA, 0.3 Ohm, SOT-523, SMD

DIODES INC.

DMG1012T-7 is a N-channel enhancement mode MOSFET. • Low on-resistance, low gate threshold voltage • Low input capacitance, fast switching speed • Low input/output leakage, ESD protected up to 2kV • Drain-source voltage is 20V at TA = +25°C • Gate-source v...

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- 280mW - 3Pins 150°C - - -
IRLML2060TRPBF
IRLML2060TRPBF - Power MOSFET, N Channel, 60 V, 1.2 A, 0.356 ohm, SOT-23, Surface Mount

SC16789

Power MOSFET, N Channel, 60 V, 1.2 A, 0.356 ohm, SOT-23, Surface Mount

INFINEON

The IRLML2060TRPBF is a N-channel HEXFET® Power MOSFET with lower switch losses and increased reliability. Compatible with existing surface mount techniques. • Industry-standard pinout • MSL1, Consumer qualification • Environment-friendly • Increased relia...

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- 1.25W - 3Pins 150°C - - -
IRFPG50PBF
IRFPG50PBF - Power MOSFET, N Channel, 1 kV, 6 A, 2 ohm, TO-247AC, Through Hole

SC16978

Power MOSFET, N Channel, 1 kV, 6 A, 2 ohm, TO-247AC, Through Hole

VISHAY

The IRFPG50PBF is a 1000V N-channel enhancement-mode Power MOSFET with single configuration. This third generation Power MOSFET from Vishay provides the designer with the best combination of fast switching, ruggedized device design, low ON-resistance. It a...

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- 180W - 3Pins 150°C - - -
DMG6602SVT
DMG6602SVT - SMD Dual MOSFET, Complementary N and P Channel, 30V, 3.4A, TSOT-26

SC16690

SMD Dual MOSFET, Complementary N and P Channel, 30V, 3.4A, TSOT-26

DIODES INC.

DMG6602SVT is a complementary pair enhancement mode MOSFET. This new generation MOSFET is designed to minimize the on-state resistance (RDS(on)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications....

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- - - 6Pins 150°C - - -
1N4003G
1N4003G - Standard Recovery Diode, 200V, 1A, Single, 1.1V, 30A

SC17835

Standard Recovery Diode, 200V, 1A, Single, 1.1V, 30A

ONSEMI

• Cathode indicated by polarity band • 240V Non-repetitive peak reverse voltage • 140V RMS reverse voltage

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- - Axial Leaded 2Pins 175°C - 1N4003 -
BZX79-C9V1
BZX79-C9V1 - Zener Single Diode, 9.1 V, 500 mW, DO-35, 2 Pins, 200 °C, Through Hole

SC18035

Zener Single Diode, 9.1 V, 500 mW, DO-35, 2 Pins, 200 °C, Through Hole

ONSEMI

The BZX79-C9V1 is a Zener Diode with glass case. This product is general usage and suitable for many different applications. • -65 to 200°C Operating and storage temperature range

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9.1V 500mW DO-35 2Pins 200°C Through Hole BZX79 Series -
GBPC2510.
GBPC2510. - Bridge Rectifier, Single Phase, 1 kV, 25 A, Module, 4 Pins, 1.1 V

SC15508

Bridge Rectifier, Single Phase, 1 kV, 25 A, Module, 4 Pins, 1.1 V

MULTICOMP PRO

The GBPC2510 is a 4-pin single-phase Bridge Rectifier Diode with integrally moulded heat-sink provides very low thermal resistance for maximum heat dissipation. It has solderable per MIL-STD-202, method 208 (for wire type) terminals and high temperature so...

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- - - 4Pins 150°C - GBPC2 -
ULN2004D1013TR
ULN2004D1013TR - Bipolar Transistor Array, Darlington, NPN, 50V, 500mA, 1000hFE, SOIC

SC16139

Bipolar Transistor Array, Darlington, NPN, 50V, 500mA, 1000hFE, SOIC

STMICROELECTRONICS

ULN2004D1013TR is a high-voltage, high-current Darlington array containing seven open collectors Darlington pairs with common emitters. Each channel is rated at 500mA and can withstand peak currents of 600mA. Suppression diodes are included for inductive l...

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- - - 16Pins 85°C - - -
2N7002K
2N7002K - Power MOSFET, N Channel, 60V, 300mA, 2 Ohm, SOT-23, SMD

SC15990

Power MOSFET, N Channel, 60V, 300mA, 2 Ohm, SOT-23, SMD

ONSEMI

The 2N7002K is a N-channel enhancement mode Field Effect Transistor features low on resistance, low gate threshold voltage, low input capacitance and fast switching speed. • Low input/output leakage • ±20V Gate-source voltage

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- 350mW - 3Pins 150°C - - -
ES1DL R3G
ES1DL R3G - Fast / Ultrafast Diode, 200 V, 1 A, Single, 950 mV, 35 ns, 30 A

SC17763

Fast / Ultrafast Diode, 200 V, 1 A, Single, 950 mV, 35 ns, 30 A

TAIWAN SEMICONDUCTOR

The ES1DL is a surface-mount Super-fast Rectifier with sub SMA plastic case and lead-free pure tin-plated terminals. • Colour band cathode end • Low-profile package • Low power loss, high efficiency • Ideal for automated placement • Glass-passivated chip j...

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- - Sub SMA - 150°C - ES1D -
BAS21
BAS21 - Small Signal Diode, Single, 250 V, 400 mA, 1 V, 50 ns, 1 A

SC17794

Small Signal Diode, Single, 250 V, 400 mA, 1 V, 50 ns, 1 A

DIODES INC.

The BAS21 is a surface mount Small Signal Switching Diode encapsulated in a moulded plastic case. It has matte tin (lead-free plating) annealed over alloy 42 lead frame terminals. It is ideally suited for automated insertion. It can also be used for genera...

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- - SOT-23 3Pins 150°C Surface Mount BAS21 -
80SQ045NG
80SQ045NG - Schottky Rectifier, 45 V, 8 A, Single, DO-201AD, 2 Pins, 550 mV

SC17491

Schottky Rectifier, 45 V, 8 A, Single, DO-201AD, 2 Pins, 550 mV

ONSEMI

The 80SQ045NG is an axial-leaded Schottky Barrier Rectifier with epoxy moulded case, all external surfaces corrosion-resistant and terminal leads are readily solderable finish. The Schottky barrier principle in a large area metal-to-silicon power diode. St...

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- - DO-201AD 2Pins 125°C Through Hole 80SQ0 -
BC556BTA
BC556BTA - Bipolar (BJT) Single Transistor, PNP, -65V, -100mA, 500mW, TO-92

SC15787

Bipolar (BJT) Single Transistor, PNP, -65V, -100mA, 500mW, TO-92

ONSEMI

The BC556BTA is a PNP epitaxial silicon Bipolar Transistor suitable for switching and amplifier applications. • High voltage VCEO • Complement to BC546

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- 500mW - 3Pins 150°C - - -
BC847BDW1T1G
BC847BDW1T1G - Bipolar Transistor Array, NPN, 45V, 100mA, 380mW, 450 hFE, SOT-363

SC16124

Bipolar Transistor Array, NPN, 45V, 100mA, 380mW, 450 hFE, SOT-363

ONSEMI

The BC847BDW1T1G is a NPN dual Bipolar Transistor Array designed for general purpose amplifier applications. It is designed for low power surface-mount applications. • Halogen-free • -55 to 150°C Junction temperature range

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- - - 6Pins 150°C - BCxxx Series -
BSH201,215
BSH201,215 - Power MOSFET, P Channel, 60 V, 160 mA, 2.1 ohm, SOT-23, Surface Mount

SC16756

Power MOSFET, P Channel, 60 V, 160 mA, 2.1 ohm, SOT-23, Surface Mount

NEXPERIA

The BSH201,215 is a P-channel enhancement mode Field-Effect Transistor in a plastic package using vertical D-MOS technology. Suitable for high frequency applications due to fast switching characteristics. • Logic-level compatible • Very fast switching • Lo...

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- 417mW - 3Pins 150°C - - -
NTR4003NT1G
NTR4003NT1G - Power MOSFET, N Channel, 30 V, 560 mA, 1.5 ohm, SOT-23, Surface Mount

SC16762

Power MOSFET, N Channel, 30 V, 560 mA, 1.5 ohm, SOT-23, Surface Mount

ONSEMI

The NTR4003NT1G is a N-channel Small-signal MOSFET offers 30V drain source voltage and 0.5A continuous drain current. It is suitable for notebooks used as level shifters, logic switches and low side load switches. • Low gate voltage threshold VGS (th) to f...

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- 830mW - 3Pins 150°C - - -
PMV16XNR
PMV16XNR - Power MOSFET, N Channel, 20 V, 6.8 A, 0.016 ohm, TO-236AB, Surface Mount

SC16871

Power MOSFET, N Channel, 20 V, 6.8 A, 0.016 ohm, TO-236AB, Surface Mount

NEXPERIA

The PMV16XN is a N-channel enhancement-mode FET in a small surface-mount plastic package using Trench MOSFET technology. It is suitable for use in LED driver, low-side load-switch and switching circuit applications. • Low threshold voltage • Very fast swit...

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- 510mW - 3Pins 150°C - - -
BT137-800E,127
BT137-800E,127 - 4Q Triac, 800V, 8A, TO-220AB, 25mA, 1V, 5W

SC17091

4Q Triac, 800V, 8A, TO-220AB, 25mA, 1V, 5W

WEEN SEMICONDUCTORS

Planar passivated sensitive gate four quadrant triac in a SOT78 plastic package intended for use in general purpose bidirectional switching and phase control applications. This sensitive gate "series E" triac is intended to be interfaced directly to microc...

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- - - 3Pins 125°C - BT137 -