Semiconductors - Discretes
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Manufacturer Part No | Order Code | Description / Manufacturer | Availability | Price For |
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Quantity | Zener Voltage Nom | Power Dissipation | Diode Case Style | No. of Pins | Operating Temperature Max | Diode Mounting | Product Range | Qualification | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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1SMA5931BT3G
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SC17913 |
Zener Single Diode, General Purpose, 18 V, 1.5 W, DO-214AC (SMA), 2 Pins, 150 °C, Surface Mount ONSEMI The 1SMA59xxBT3G series surface mount Voltage Regulator Zener Diode with void free transfer-moulded plastic case. All external surfaces are corrosion-resistant and leads are readily solderable. • Standard Zener breakdown voltage range -3.3 to 68V • ESD rat...
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18V | 1.5W | DO-214AC (SMA) | 2Pins | 150°C | Surface Mount | 1SMA59xxBT3G | AEC-Q101 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MJ15003G
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SC15816 |
Bipolar (BJT) Single Transistor, Audio, NPN, 140V, 20A, 250W, TO-3 ONSEMI The MJ15003G is a Power Transistor designed for high power audio, disk head positioners and other linear applications. High safe operating area and high DC current gain. Ideal for low distortion complementary designs. • 140VDC Collector-base voltage • 0.70...
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1+ €7.1253 (€8.76) 10+ €6.8796 (€8.46) 50+ €6.5286 (€8.03) |
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- | 250W | - | 2Pins | 200°C | - | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
PBSS8110T,215
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SC16078 |
Bipolar (BJT) Single Transistor, NPN, 100V, 1A, 300mW, SOT-23, SMD NEXPERIA The PBSS8110T is a 1A NPN breakthrough-in small signal (BISS) Transistor housed in a surface-mount plastic package. • Low collector-emitter saturation voltage VCEsat • High collector current capability IC and ICM • Higher efficiency leading to less heat ge...
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1+ €0.2808 (€0.35) 10+ €0.1638 (€0.20) 100+ €0.1053 (€0.13) |
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- | 300mW | - | 3Pins | 150°C | - | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SSA33L-E3/61T
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SC17487 |
Schottky Rectifier, 30 V, 3 A, Single, DO-214AC (SMA), 2 Pins, 450 mV VISHAY The SSA33L-E3/5AT is a surface-mount high-current density Schottky Barrier Rectifier with solderable matte tin-plated terminals. It is suitable for use in low-voltage high-frequency inverters, free-wheeling, DC/DC converters and polarity protection applica...
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1+ €0.2925 (€0.36) 10+ €0.2691 (€0.33) 100+ €0.2457 (€0.30) |
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- | - | DO-214AC (SMA) | 2Pins | 150°C | Surface Mount | SSA33 | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BYG21M-E3/TR
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SC17709 |
Standard Recovery Diode, 1kV, 1.5A, Single, 1.6V, 120ns, 30A VISHAY • Glass passivated pallet chip junction • Low reverse current • Soft recovery characteristic • Fast reverse recovery time
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2+ €0.1989 (€0.24) 10+ €0.1872 (€0.23) 100+ €0.1755 (€0.22) |
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- | - | DO-214AC (SMA) | 2Pins | 150°C | - | BYG21 | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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W02G
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SC15514 |
Bridge Rectifier, Single Phase, 200 V, 1.5 A, Through Hole, 4 Pins, 1.1 V MULTICOMP PRO W02G is a single-phase bridge rectifier designed for converting AC to DC. It features a reverse voltage rating of 200V and a current capacity of 1.5A, with a forward voltage drop of 1.1V. Housed in a through-hole package with 4 pins, it is ideal for use in...
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5+ €0.1755 (€0.22) 25+ €0.1521 (€0.19) 100+ €0.1287 (€0.16) |
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- | - | - | 4Pins | 150°C | - | WOXG | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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2N6109
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SC15381 |
Bipolar Transistor, PNP, 50V, 7A, TO-220 MULTICOMP PRO The 2N6109 is a -50V Silicon PNP Complementary Plastic Power Transistor designed for use in general purpose amplifier and switching applications. • DC current gain (hfe = 30 to 150 at Ic = 7A) • Collector-emitter sustaining voltage (Vceo (sus) = 50VDC mini...
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1+ €0.5733 (€0.71) 10+ €0.4797 (€0.59) 50+ €0.4212 (€0.52) |
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- | 40W | - | 3Pins | 150°C | - | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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DMG1012T-7
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SC16742 |
Power MOSFET, N Channel, 20V, 630mA, 0.3 Ohm, SOT-523, SMD DIODES INC. DMG1012T-7 is a N-channel enhancement mode MOSFET. • Low on-resistance, low gate threshold voltage • Low input capacitance, fast switching speed • Low input/output leakage, ESD protected up to 2kV • Drain-source voltage is 20V at TA = +25°C • Gate-source v...
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1+ €0.117 (€0.14) 10+ €0.0702 (€0.09) 100+ €0.0468 (€0.06) |
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- | 280mW | - | 3Pins | 150°C | - | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRLML2060TRPBF
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SC16789 |
Power MOSFET, N Channel, 60 V, 1.2 A, 0.356 ohm, SOT-23, Surface Mount INFINEON The IRLML2060TRPBF is a N-channel HEXFET® Power MOSFET with lower switch losses and increased reliability. Compatible with existing surface mount techniques. • Industry-standard pinout • MSL1, Consumer qualification • Environment-friendly • Increased relia...
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- | 1.25W | - | 3Pins | 150°C | - | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRFPG50PBF
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SC16978 |
Power MOSFET, N Channel, 1 kV, 6 A, 2 ohm, TO-247AC, Through Hole VISHAY The IRFPG50PBF is a 1000V N-channel enhancement-mode Power MOSFET with single configuration. This third generation Power MOSFET from Vishay provides the designer with the best combination of fast switching, ruggedized device design, low ON-resistance. It a...
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1+ €2.4219 (€2.98) 10+ €2.34 (€2.88) 50+ €2.1177 (€2.60) |
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- | 180W | - | 3Pins | 150°C | - | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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DMG6602SVT
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SC16690 |
SMD Dual MOSFET, Complementary N and P Channel, 30V, 3.4A, TSOT-26 DIODES INC. DMG6602SVT is a complementary pair enhancement mode MOSFET. This new generation MOSFET is designed to minimize the on-state resistance (RDS(on)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications....
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1+ €0.1638 (€0.20) 10+ €0.0936 (€0.12) 100+ €0.0702 (€0.09) |
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- | - | - | 6Pins | 150°C | - | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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1N4003G
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SC17835 |
Standard Recovery Diode, 200V, 1A, Single, 1.1V, 30A ONSEMI • Cathode indicated by polarity band • 240V Non-repetitive peak reverse voltage • 140V RMS reverse voltage
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- | - | Axial Leaded | 2Pins | 175°C | - | 1N4003 | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BZX79-C9V1
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SC18035 |
Zener Single Diode, 9.1 V, 500 mW, DO-35, 2 Pins, 200 °C, Through Hole ONSEMI The BZX79-C9V1 is a Zener Diode with glass case. This product is general usage and suitable for many different applications. • -65 to 200°C Operating and storage temperature range
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5+ €0.0936 (€0.12) 20+ €0.0351 (€0.04) 100+ €0.0234 (€0.03) |
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9.1V | 500mW | DO-35 | 2Pins | 200°C | Through Hole | BZX79 Series | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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GBPC2510.
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SC15508 |
Bridge Rectifier, Single Phase, 1 kV, 25 A, Module, 4 Pins, 1.1 V MULTICOMP PRO The GBPC2510 is a 4-pin single-phase Bridge Rectifier Diode with integrally moulded heat-sink provides very low thermal resistance for maximum heat dissipation. It has solderable per MIL-STD-202, method 208 (for wire type) terminals and high temperature so...
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1+ €1.5795 (€1.94) 10+ €1.4274 (€1.76) 100+ €1.2519 (€1.54) |
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- | - | - | 4Pins | 150°C | - | GBPC2 | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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ULN2004D1013TR
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SC16139 |
Bipolar Transistor Array, Darlington, NPN, 50V, 500mA, 1000hFE, SOIC STMICROELECTRONICS ULN2004D1013TR is a high-voltage, high-current Darlington array containing seven open collectors Darlington pairs with common emitters. Each channel is rated at 500mA and can withstand peak currents of 600mA. Suppression diodes are included for inductive l...
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- | - | - | 16Pins | 85°C | - | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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2N7002K
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SC15990 |
Power MOSFET, N Channel, 60V, 300mA, 2 Ohm, SOT-23, SMD ONSEMI The 2N7002K is a N-channel enhancement mode Field Effect Transistor features low on resistance, low gate threshold voltage, low input capacitance and fast switching speed. • Low input/output leakage • ±20V Gate-source voltage
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- | 350mW | - | 3Pins | 150°C | - | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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ES1DL R3G
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SC17763 |
Fast / Ultrafast Diode, 200 V, 1 A, Single, 950 mV, 35 ns, 30 A TAIWAN SEMICONDUCTOR The ES1DL is a surface-mount Super-fast Rectifier with sub SMA plastic case and lead-free pure tin-plated terminals. • Colour band cathode end • Low-profile package • Low power loss, high efficiency • Ideal for automated placement • Glass-passivated chip j...
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- | - | Sub SMA | - | 150°C | - | ES1D | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BAS21
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SC17794 |
Small Signal Diode, Single, 250 V, 400 mA, 1 V, 50 ns, 1 A DIODES INC. The BAS21 is a surface mount Small Signal Switching Diode encapsulated in a moulded plastic case. It has matte tin (lead-free plating) annealed over alloy 42 lead frame terminals. It is ideally suited for automated insertion. It can also be used for genera...
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- | - | SOT-23 | 3Pins | 150°C | Surface Mount | BAS21 | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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80SQ045NG
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SC17491 |
Schottky Rectifier, 45 V, 8 A, Single, DO-201AD, 2 Pins, 550 mV ONSEMI The 80SQ045NG is an axial-leaded Schottky Barrier Rectifier with epoxy moulded case, all external surfaces corrosion-resistant and terminal leads are readily solderable finish. The Schottky barrier principle in a large area metal-to-silicon power diode. St...
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1+ €0.5031 (€0.62) 10+ €0.468 (€0.58) 100+ €0.4329 (€0.53) |
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- | - | DO-201AD | 2Pins | 125°C | Through Hole | 80SQ0 | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC556BTA
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SC15787 |
Bipolar (BJT) Single Transistor, PNP, -65V, -100mA, 500mW, TO-92 ONSEMI The BC556BTA is a PNP epitaxial silicon Bipolar Transistor suitable for switching and amplifier applications. • High voltage VCEO • Complement to BC546
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- | 500mW | - | 3Pins | 150°C | - | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC847BDW1T1G
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SC16124 |
Bipolar Transistor Array, NPN, 45V, 100mA, 380mW, 450 hFE, SOT-363 ONSEMI The BC847BDW1T1G is a NPN dual Bipolar Transistor Array designed for general purpose amplifier applications. It is designed for low power surface-mount applications. • Halogen-free • -55 to 150°C Junction temperature range
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- | - | - | 6Pins | 150°C | - | BCxxx Series | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BSH201,215
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SC16756 |
Power MOSFET, P Channel, 60 V, 160 mA, 2.1 ohm, SOT-23, Surface Mount NEXPERIA The BSH201,215 is a P-channel enhancement mode Field-Effect Transistor in a plastic package using vertical D-MOS technology. Suitable for high frequency applications due to fast switching characteristics. • Logic-level compatible • Very fast switching • Lo...
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- | 417mW | - | 3Pins | 150°C | - | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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NTR4003NT1G
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SC16762 |
Power MOSFET, N Channel, 30 V, 560 mA, 1.5 ohm, SOT-23, Surface Mount ONSEMI The NTR4003NT1G is a N-channel Small-signal MOSFET offers 30V drain source voltage and 0.5A continuous drain current. It is suitable for notebooks used as level shifters, logic switches and low side load switches. • Low gate voltage threshold VGS (th) to f...
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- | 830mW | - | 3Pins | 150°C | - | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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PMV16XNR
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SC16871 |
Power MOSFET, N Channel, 20 V, 6.8 A, 0.016 ohm, TO-236AB, Surface Mount NEXPERIA The PMV16XN is a N-channel enhancement-mode FET in a small surface-mount plastic package using Trench MOSFET technology. It is suitable for use in LED driver, low-side load-switch and switching circuit applications. • Low threshold voltage • Very fast swit...
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- | 510mW | - | 3Pins | 150°C | - | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BT137-800E,127
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SC17091 |
4Q Triac, 800V, 8A, TO-220AB, 25mA, 1V, 5W WEEN SEMICONDUCTORS Planar passivated sensitive gate four quadrant triac in a SOT78 plastic package intended for use in general purpose bidirectional switching and phase control applications. This sensitive gate "series E" triac is intended to be interfaced directly to microc...
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1+ €0.5967 (€0.73) 10+ €0.4329 (€0.53) 100+ €0.3042 (€0.37) |
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- | - | - | 3Pins | 125°C | - | BT137 | - |