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Peak Repetitive Off State Voltage On State RMS Current Triac Case Style Gate Trigger Voltage Max Peak Non Repetitive Surge Current Holding Current Max No. of Pins Operating Temperature Max Peak On State Voltage Thyristor Mounting Product Range
 
 
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BT137-800E,127
BT137-800E,127 - 4Q Triac, 800V, 8A, TO-220AB, 25mA, 1V, 5W

SC17091

4Q Triac, 800V, 8A, TO-220AB, 25mA, 1V, 5W

WEEN SEMICONDUCTORS

Planar passivated sensitive gate four quadrant triac in a SOT78 plastic package intended for use in general purpose bidirectional switching and phase control applications. This sensitive gate "series E" triac is intended to be interfaced directly to microc...

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800V 8A TO-220AB 1V 71A 20mA 3Pins 125°C 1.65V Through Hole BT137
FDC658AP
FDC658AP - Power MOSFET, P Channel, 30 V, 4 A, 0.044 ohm, SuperSOT, Surface Mount

SC16747

Power MOSFET, P Channel, 30 V, 4 A, 0.044 ohm, SuperSOT, Surface Mount

ONSEMI

The FDC658AP is a logic level single P-channel MOSFET produced using advanced PowerTrench® process. It has been optimized for battery power management, load switch and DC-to-DC conversion applications. • Low gate charge • High performance Trench technology...

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- - - - - - 6Pins 150°C - - -
MM3Z3V6T1G
MM3Z3V6T1G - Zener Single Diode, 3.6 V, 300 mW, SOD-323, 2 Pins, 150 °C, Surface Mount

SC18003

Zener Single Diode, 3.6 V, 300 mW, SOD-323, 2 Pins, 150 °C, Surface Mount

ONSEMI

• No. of Pins : 2Pins • Operating Temperature Max : 150°C • Product Range : MM3Z3

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- - - - - - 2Pins 150°C - - MM3Z3
SUD50P10-43L-E3
SUD50P10-43L-E3 - Power MOSFET, P Channel, 100 V, 38 A, 0.036 ohm, TO-252AA, Surface Mount

SC16863

Power MOSFET, P Channel, 100 V, 38 A, 0.036 ohm, TO-252AA, Surface Mount

VISHAY

The SUD50P10-43L-E3 is a P-channel TrenchFET® Power MOSFET with 175°C operating temperature. • ±20V Gate-source voltage

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- - - - - - 3Pins 175°C - - -
IRF540PBF
IRF540PBF - Power MOSFET, N Channel, 100V, 28A, 0.077 Ohm, TO-220AB

SC15756

Power MOSFET, N Channel, 100V, 28A, 0.077 Ohm, TO-220AB

VISHAY

The IRF540PBF is a 100V N-channel Power MOSFET, third generation power MOSFET provides the designer with the best combination of fast switching, ruggedized device design and low on-resistance. • Dynamic dV/dt rating • Repetitive avalanche rated • 175°C Ope...

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- - - - - - 3Pins 175°C - - -
MJD122T4G
MJD122T4G - Bipolar (BJT) Single Transistor, Darlington, NPN, 100V, 8A, 20W, TO-252 (DPAK), SMD

SC16081

Bipolar (BJT) Single Transistor, Darlington, NPN, 100V, 8A, 20W, TO-252 (DPAK), SMD

ONSEMI

The MJD122T4G is a 8A NPN bipolar power Darlington Transistor designed for general purpose amplifier and low speed switching applications. It is the surface-mount replacement for 2N6040 to 2N6045 series, TIP120 to TIP122 series and TIP125 to TIP127 series....

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- - - - - - 3Pins 150°C - - -
ES3D
ES3D - Fast / Ultrafast Diode, 200 V, 3 A, Single, 950 mV, 20 ns, 100 A

SC17770

Fast / Ultrafast Diode, 200 V, 3 A, Single, 950 mV, 20 ns, 100 A

ONSEMI

The ES3D is an ultra fast recovery Rectifier Diode for surface mount applications. • Glass-passivated Junction • Easy to Pick and Place • Built-in Strain Relief • Superfast Recovery Times for High Efficiency

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- - - - - - - 150°C - - ES3D
BAV23S
BAV23S - Small Signal Diode, Dual Series, 250 V, 200 mA, 1.25 V, 50 ns, 9 A

SC17779

Small Signal Diode, Dual Series, 250 V, 200 mA, 1.25 V, 50 ns, 9 A

ONSEMI

The BAV23S is a general purpose high voltage Small Signal Diode for general usage and suitable for many different applications. • -55 to 150°C Storage temperature range • 150°C Operating junction temperature

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- - - - - - 3Pins 150°C - - BAV23
SK54C R7G
SK54C R7G - Schottky Rectifier, 40 V, 5 A, Single, DO-214AB (SMC), 2 Pins, 550 mV

SC17486

Schottky Rectifier, 40 V, 5 A, Single, DO-214AB (SMC), 2 Pins, 550 mV

TAIWAN SEMICONDUCTOR

The SK54C is a surface mount Schottky Barrier Rectifier with matte tin-plated leads terminals, UL94V-0-flame rated moulding compound case and indicated by cathode band polarity. Guarding for overvoltage protection. Ideal for automated placement. • Low powe...

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- - - - - - 2Pins 125°C - - SK
BT134-600D,127
BT134-600D,127 - Triac, 600V, 4A, SOT-82, 10mA, 1V, 5W

SC17078

Triac, 600V, 4A, SOT-82, 10mA, 1V, 5W

WEEN SEMICONDUCTORS

Planar passivated very sensitive gate four quadrant triac in a SOT82 plastic package intended for use in general purpose bidirectional switching and phase control applications where high sensitivity is required in all four quadrants. This "series D" triac ...

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600V 4A SOT-82 1V 27A 10mA 3Pins 125°C 1.7V Through Hole BT134
FDP18N50
FDP18N50 - Power MOSFET, N Channel, 500 V, 18 A, 0.265 ohm, TO-220, Through Hole

SC15742

Power MOSFET, N Channel, 500 V, 18 A, 0.265 ohm, TO-220, Through Hole

ONSEMI

The FDP18N50 is a 500V N-channel UniFET™ MOSFET based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance and to provide better switching performance and higher avalanche energy strength. The body diode's reverse rec...

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- - - - - - 3Pins 150°C - - -
BCV47,215
BCV47,215 - Bipolar (BJT) Single Transistor, NPN, 60V, 500mA, 250mW, SOT-23, SMD

SC16011

Bipolar (BJT) Single Transistor, NPN, 60V, 500mA, 250mW, SOT-23, SMD

NEXPERIA

The BCV47 is a NPN Darlington Transistor with medium current and low voltage, high DC current gain. Used in preamplifier input stages. • Complement to BCV46

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PMBT3904,215
PMBT3904,215 - Bipolar (BJT) Single Transistor, Switching, NPN, 40V, 200mA, 250mW, TO-236AB, SMD

SC16113

Bipolar (BJT) Single Transistor, Switching, NPN, 40V, 200mA, 250mW, TO-236AB, SMD

NEXPERIA

The PMBT3904,215 is a NPN Switching Transistor housed in a surface-mount plastic package. • PNP complement is PMBT3906 • 1A Marking code

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- - - - - - 3Pins 150°C - - -
BT149D,126
BT149D,126 - Thyristor, 400V, 200uA, 500mA, 800mA, TO-92, 3 Pins

SC17043

Thyristor, 400V, 200uA, 500mA, 800mA, TO-92, 3 Pins

WEEN SEMICONDUCTORS

Planar passivated silicon controlled rectifier in a SOT54 (TO-92) plastic package. This SCR is designed to be interfaced directly to microcontrollers, logic ICs and other low power gate trigger circuits. • Suitable applications: General purpose switching a...

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400V 800mA - 800mV 9A 5mA 3Pins 125°C - Through Hole BT149
BZX84-C2V7,215
BZX84-C2V7,215 - Zener Single Diode, 2.7 V, 250 mW, SOT-23, 3 Pins, 150 °C, Surface Mount

SC17888

Zener Single Diode, 2.7 V, 250 mW, SOT-23, 3 Pins, 150 °C, Surface Mount

NEXPERIA

The BZX84 series low-power voltage regulator Zener Diode encapsulated in a small SOT23 (TO-236AB) plastic surface-mounted device (SMD) package. It is suitable for general regulation functions. • ±1%, ±2% and ±5% Three tolerance series • 2.4 to 75V (E24 ran...

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- - - - - - 3Pins 150°C - - BZX84C
FDN5618P
FDN5618P - SMD Power MOSFET P Channel PowerTrench Transistor, SuperSOT, 60V, 1.25A

SC16699

SMD Power MOSFET P Channel PowerTrench Transistor, SuperSOT, 60V, 1.25A

ONSEMI

The FDN5618P is a surface mount, 60V P channel logic level powerTrench MOSFET in superSOT-23 package. PowerTrench process has been tailored to minimize the onstate resistance and maintain low gate charge for superior switching performance. This device is w...

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- - - - - - 3Pins 150°C - - -
BSH105,215
BSH105,215 - Power MOSFET, N Channel, 20 V, 1.05 A, 0.14 ohm, SOT-23, Surface Mount

SC16721

Power MOSFET, N Channel, 20 V, 1.05 A, 0.14 ohm, SOT-23, Surface Mount

NEXPERIA

The BSH105,215 is a N-channel enhancement mode Field-Effect Transistor in a plastic package using vertical D-MOS technology. Suitable for high frequency applications due to fast switching characteristics. • Logic-level compatible • Very fast switching • Lo...

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- - - - - - 3Pins 150°C - - -
KBPC2504
KBPC2504 - Bridge Rectifier Diode, Single Phase, 400V, 25A, Module, 1.1V, 4 Pins

SC17456

Bridge Rectifier Diode, Single Phase, 400V, 25A, Module, 1.1V, 4 Pins

MULTICOMP PRO

The KBPC2504 from Multicomp Pro is a glass passivated bridge rectifier with solderable 0.25" FAST ON terminals. The rectifier bridge consists of four silicon junctions connected as a full bridge. It has electrically isolated base -2000volts for maximum hea...

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- - - - - - 4Pins 150°C - - KBPC
IRF7240TRPBF
IRF7240TRPBF - Power MOSFET, P Channel, 40 V, 10.5 A, 0.015 ohm, SOIC, Surface Mount

SC16857

Power MOSFET, P Channel, 40 V, 10.5 A, 0.015 ohm, SOIC, Surface Mount

INFINEON

The IRF7240TRPBF is a HEXFET® single P-channel Power MOSFET utilizes advanced processing techniques to achieve the extremely low ON-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and lo...

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- - - - - - 8Pins 150°C - - -
MMBT2222ALT1G
MMBT2222ALT1G - Bipolar (BJT) Single Transistor, General Purpose, NPN, 40V, 600mA, 225mW, SOT-23, SMD

SC16021

Bipolar (BJT) Single Transistor, General Purpose, NPN, 40V, 600mA, 225mW, SOT-23, SMD

ONSEMI

The MMBT2222ALT1G is a NPN silicon Bipolar Transistor, designed for use in linear, lower power surface mount and switching applications. • Halogen-free/BFR-free • AEC-Q101 Qualified and PPAP Capable

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BAS70-05W,115
BAS70-05W,115 - Small Signal Schottky Diode, Dual Common Cathode, 70 V, 70 mA, 1 V, 100 mA, 150 °C

SC17671

Small Signal Schottky Diode, Dual Common Cathode, 70 V, 70 mA, 1 V, 100 mA, 150 °C

NEXPERIA

The BAS70 series general purpose Schottky Diode encapsulated in a small surface-mounted device (SMD) plastic package. It is used for ultra high-speed switching and voltage clamping. • High speed switching • Low leakage current • High breakdown voltage • Lo...

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1N914BWT
1N914BWT - Small Signal Diode, Single, 75 V, 1 V, 4 ns

SC17817

Small Signal Diode, Single, 75 V, 1 V, 4 ns

ONSEMI

The 1N914BWT is a high conductance fast switching Small Signal Diode with matte tin-plated lead terminals and green mould compound case. This product is general usage and suitable for many different applications. • Fast switching device (TRR <lt/>4.0ns) • ...

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- - - - - - 2Pins 150°C - - 1N914
BAT54KFILM
BAT54KFILM - Small Signal Schottky Diode, 40 V, 300 mA, 900 mV, 1 A, 150 °C

SC17619

Small Signal Schottky Diode, 40 V, 300 mA, 900 mV, 1 A, 150 °C

STMICROELECTRONICS

The BAT54KFILM is a surface mount Small Signal Schottky Diode featuring extremely fast switching, low capacitance, low forward and reverse recovery times. • Low conduction and reverse losses • Negligible switching losses • ECOPACK®2 compliant component • 1...

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- - - - - - 2Pins 150°C - - BAT54
KBP206G.
KBP206G. - Bridge Rectifier Diode, Single Phase, 600V, 2A, SIP, 1.1V, 4 Pins

SC17445

Bridge Rectifier Diode, Single Phase, 600V, 2A, SIP, 1.1V, 4 Pins

MULTICOMP PRO

The KBP206G is a single phase Bridge Rectifier with glass passivated, ideal for printed circuit board. • 60A Peak surge overload rating • 420V Maximum RMS bridge input voltage • 600V Maximum DC blocking voltage • Multicomp Pro products are rated 4.6 out of...

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- - - - - - 4Pins 150°C - - KBP
IRLML6244TRPBF
IRLML6244TRPBF - Power MOSFET, N Channel, 20 V, 6.3 A, 0.021 ohm, SOT-23, Surface Mount

SC16790

Power MOSFET, N Channel, 20 V, 6.3 A, 0.021 ohm, SOT-23, Surface Mount

INFINEON

The IRLML6244TRPBF is a N-channel HEXFET® Power MOSFET for load/system switch. • Industry Standard • MSL1, Industrial Qualification • Multi-vendor Compatibility • Environmentally-friendly • Surface Mount

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- - - - - - 3Pins 150°C - - -