Semiconductors - Discretes
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Quantity | Peak Repetitive Off State Voltage | On State RMS Current | Triac Case Style | Gate Trigger Voltage Max | Peak Non Repetitive Surge Current | Holding Current Max | No. of Pins | Operating Temperature Max | Peak On State Voltage | Thyristor Mounting | Product Range | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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Z0103MN 5AA4
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SC17102 |
Triac, 600V, 1A, SOT-223, 3mA, 1.3V, 1W STMICROELECTRONICS Z01 series standard 1A triac suitable for general purpose AC switching applications. Typically used in applications such as home appliances (electrovalve, pump, door lock, small lamp control), fan speed controllers. • 3mA gate current sensitivity
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600V | 1A | SOT-223 | 1.3V | 8A | 7mA | 3Pins | 125°C | 1.6V | Surface Mount | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRF1010EPBF
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SC17255 |
Power MOSFET, N Channel, 60V, 81A, 0.012 Ohm, TO-220AB INFINEON The IRF1010EPBF is a 60V single N-channel HEXFET Power MOSFET with advanced process technology. Advanced HEXFET® power MOSFET utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the f...
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1+ €1.1115 (€1.37) 10+ €0.9477 (€1.17) 100+ €0.6903 (€0.85) |
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- | - | - | - | - | - | 3Pins | 175°C | - | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
WCS103
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SC16677 |
12 Piece N-Channel Power MOSFET Kit WHADDA Switch and amplify your electronic signals in high power applications with this set! It includes the IRFZ44N, IRF540N, IRFP460, FQP47P06, IRL540, IRLZ44, NTP60N06L, FQP27P06, a fast speed insulated gate bipolar transistor IGBT 17A and an octal bus transcei...
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1 Set
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1+ €23.8212 (€29.30) 5+ €22.9554 (€28.24) 15+ €21.0483 (€25.89) |
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2N4991
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SC17031 |
Silicon Bilateral Switch, DIAC / SIDAC, 1A, TO-92, 3 Pins SOLID STATE The 2N4991 is a 3-pin silicon Bilateral Switch for applications where stability of switching voltage over a wide temperature range and well matched bilateral characteristics are an asset. The TRIAC is planar monolithic silicon integrated circuits having el...
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1+ €2.6091 (€3.21) 10+ €2.3751 (€2.92) 100+ €2.1645 (€2.66) |
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- | - | - | - | - | - | 3Pins | - | - | Through Hole | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BC546BTF
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SC15782 |
Bipolar (BJT) Single Transistor, NPN, 65V, 100mA, 500mW, TO-92 ONSEMI The BC546BTF is a NPN epitaxial silicon Bipolar Transistor suitable for switching and amplifier applications. • High voltage VCEO • Complement to BC556
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- | - | - | - | - | - | 3Pins | 150°C | - | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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PMEG6045ETPX
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SC17622 |
Schottky Rectifier, 60 V, 4.5 A, Single, SOD-128, 2 Pins, 530 mV NEXPERIA The PMEG6045ETP is a high-temperature planar maximum efficiency general application (MEGA) Schottky Barrier Rectifier with an integrated guard ring for stress protection. It is encapsulated in a small and flat lead surface-mounted device (SMD) plastic pack...
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1+ €0.4563 (€0.56) 10+ €0.2691 (€0.33) 100+ €0.1989 (€0.24) |
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- | - | - | - | - | - | 2Pins | 175°C | - | - | PMEG6 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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PMEG10020ELRX
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SC17635 |
Schottky Rectifier, 100 V, 2 A, Single, SOD-123W, 2 Pins, 830 mV NEXPERIA The PMEG10020ELR is a low leakage current planar maximum efficiency general application (MEGA) Schottky Barrier Rectifier with an integrated guard ring for stress protection. It is encapsulated in a small and flat lead surface-mounted device (SMD) plastic ...
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- | - | - | - | - | - | 2Pins | 175°C | - | - | PMEG1 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MBR0520LT3G
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SC17638 |
Schottky Rectifier, 20 V, 500 mA, Single, SOD-123, 2 Pins, 385 mV ONSEMI The MBR0520LT3G is a surface-mount Schottky Power Rectifier with epoxy moulded case. It employs the Schottky barrier principle with a barrier metal that produces optimal forward voltage drop-reverse current trade-off. Ideally suited for low voltage, high f...
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- | - | - | - | - | - | 2Pins | 125°C | - | - | MBR05 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MURA110T3G
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SC17741 |
Fast / Ultrafast Diode, 100 V, 1 A, Single, 875 mV, 30 ns, 50 A ONSEMI The MURA110T3G is a surface-mount ultra-fast Power Rectifier with moulded epoxy case. It is ideally suited for high voltage, high frequency rectification or as free-wheeling and protection diodes in surface-mount applications where compact size and weight ...
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- | - | - | - | - | - | - | 175°C | - | - | MURA1 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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STW15NK90Z
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SC16941 |
Power MOSFET, N Channel, 900 V, 9.5 A, 0.4 ohm, TO-247, Through Hole STMICROELECTRONICS The STW15NK90Z is a 900V N-channel Zener-protected Power MOSFET developed using SuperMESH™ technology, achieved through optimization of well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is...
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1+ €3.4164 (€4.20) 10+ €2.9952 (€3.68) |
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- | - | - | - | - | - | 3Pins | 150°C | - | - | SuperMESH Series | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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TYN612MRG
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SC15805 |
Thyristor, 600V, 5mA, 8A, 12A, TO-220AB STMICROELECTRONICS 12A SCR suitable to fit modes of control found in applications such as voltage regulation circuits for motorbikes, overvoltage crowbar protection, motor control circuits in power tools and kitchen aids, inrush current limiting circuits, capacitive discharg...
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1+ €0.5382 (€0.66) 10+ €0.4446 (€0.55) 100+ €0.3627 (€0.45) |
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600V | 12A | - | 1.3V | - | 20mA | 3Pins | 125°C | - | Through Hole | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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ES2D
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SC17748 |
Fast / Ultrafast Diode, 200 V, 2 A, Single, 900 mV, 20 ns, 50 A ONSEMI The ES2D is a glass passivated ultrafast Recovery Rectifier for surface mount applications. This recovery rectifier is for general use and also suitable for many different applications. • Built-in strain relief • Superfast recovery time for high efficiency...
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5+ €0.2457 (€0.30) 20+ €0.2223 (€0.27) 100+ €0.1989 (€0.24) |
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- | - | - | - | - | - | - | 150°C | - | - | ES2D | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MMSZ4683T1G
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SC18005 |
Zener Single Diode, 3 V, 500 mW, SOD-123, 2 Pins, 150 °C, Surface Mount ONSEMI The MMSZ4xxxT1G series surface mount Voltage Regulator Zener Diode designed for optimal automated board assembly. This device provides a convenient alternative to the leadless 34-package style. It comes with void free transfer-moulded thermosetting plastic...
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- | - | - | - | - | - | 2Pins | 150°C | - | - | MMSZxxxT1G | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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1N4149
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SC17774 |
Small Signal Diode, Single, 100 V, 500 mA, 1 V, 4 ns, 4 A ONSEMI The 1N4149 is a 2-pin high conductance fast Small Signal Diode offers the best available combination of quality. It is optimized for energy-efficient designs and offers high reverse voltage (200V). This product is general usage and suitable for many differ...
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5+ €0.0585 (€0.07) 20+ €0.0234 (€0.03) 100+ €0.0117 (€0.01) |
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- | - | - | - | - | - | 2Pins | 175°C | - | - | 1N4149 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BAV70W,115
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SC17718 |
Small Signal Diode, Dual Common Cathode, 100 V, 175 mA, 1.25 V, 4 ns, 4 A NEXPERIA The BAV70W,115 is a high-speed Switching Diode encapsulated in a small surface-mounted device (SMD) plastic package. It is used for general purpose switching. • ≤1.5pF Low capacitance Cd • Low leakage current • ≤100V Reverse voltage VR
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- | - | - | - | - | - | 3Pins | 150°C | - | - | BAV70 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC847BPN,115
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SC16127 |
Bipolar Transistor Array, NPN, PNP, 45V, 100mA, 200mW, 200hFE, SC-88 NEXPERIA The BC847BPN from NXP is a surface mount NPN/PNP general purpose transistor in SOT-363 (SC-88) package. This transistor is characterized with low collector capacitance, low collector to emitter saturation voltage and closely matched current gain. It reduce...
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- | - | - | - | - | - | 6Pins | 150°C | - | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC846ALT1G
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SC16099 |
Bipolar (BJT) Single Transistor, NPN, 65V, 100mA, 300mW, SOT-23, SMD ONSEMI The BC846ALT1G is a NPN Bipolar Transistor designed for use in linear and switching applications. The device is housed in the package which is designed for lower power surface-mount applications. • Halogen-free • AEC-Q101 qualified and PPAP capable • Moist...
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- | - | - | - | - | - | 3Pins | 150°C | - | - | BCxxx | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BSS138BKS,115
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SC16799 |
Dual MOSFET, Trench, N Channel, 60V, 320mA, 1 ohm, SOT-363, Surface Mount NEXPERIA The BSS138BKS is a dual N-channel enhancement-mode FET in a surface-mount plastic package using Trench MOSFET technology. It is suitable for relay driver, high-speed line driver, low-side load-switch and switching circuit applications. • Logic-level compat...
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- | - | - | - | - | - | 6Pins | 150°C | - | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BT134W-600D,115
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SC17075 |
Triac, 600V, 1A, SOT-223, 10mA, 1V, 5W WEEN SEMICONDUCTORS Planar passivated very sensitive gate four quadrant triac in a SOT223 surface-mounable plastic package. This very sensitive gate "series D" triac is intended for interfacing with low power drivers including microcontrollers. • Suitable applications: Genera...
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600V | 1A | SOT-223 | 1V | 11A | 10mA | 4Pins | 125°C | 1.5V | Surface Mount | BT134W | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRF5210PBF
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SC15831 |
Power MOSFET, P Channel, 100V, 40A, 0.06 ohm, TO-220AB INFINEON The IRF5210PBF is a P-channel HEXFET® Power MOSFET. This HEXFET® power MOSFET utilizes advance processing techniques to achieve extremely low 0n-resistance per silicon area. • Advanced Process Technology • New Ultra Low On-Resistance • Fast Switching • Dyn...
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1+ €1.5795 (€1.94) 10+ €1.287 (€1.58) 100+ €1.17 (€1.44) |
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- | - | - | - | - | - | 3Pins | 175°C | - | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BSH205G2R
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SC16811 |
Power MOSFET, P Channel, 20 V, 2 A, 0.12 ohm, TO-236AB, Surface Mount NEXPERIA The BSH205G2 is a P-channel MOSFET in a small surface-mount plastic package using Trench MOSFET technology. It is suitable for relay driver, high-speed line driver, high-side load switch and switching circuit applications. • Low threshold voltage • Low ON-...
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- | - | - | - | - | - | 3Pins | 150°C | - | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BFR92PE6327HTSA1
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SC16006 |
Bipolar - RF Transistor, NPN, 15V, 5GHz, 280mW, 45mA, SOT-23 INFINEON The BFR 92P E6327 is a NPN Silicon RF Transistor for broadband amplifiers up to 2GHz and fast non-saturated switches at collector currents from 0.5 to 20mA. • Complementary type - BFT91 (PNP)
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- | - | - | - | - | - | 3Pins | 150°C | - | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SI2333DDS-T1-GE3
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SC16861 |
Power MOSFET, P Channel, 12 V, 6 A, 0.023 ohm, SOT-23, Surface Mount VISHAY The SI2333DDS-T1-GE3 is a 12VDS TrenchFET® P-channel enhancement-mode Power MOSFET suitable for load switch and battery switch applications. • 100% Rg tested • -55 to 150°C Operating temperature range • Halogen-free
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- | - | - | - | - | - | 3Pins | 150°C | - | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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NTR2101PT1G
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SC16911 |
Power MOSFET, P Channel, 8 V, 3.7 A, 0.052 ohm, SOT-23, Surface Mount ONSEMI The NTR2101PT1G is a P-channel Small-signal MOSFET offers -8V drain source voltage and -3.7A continuous drain current. It is suitable for DC-to-DC converters, high side load switch, cellular phone, notebook, PDAs. • Leading Trench technology for low RDS (O...
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- | - | - | - | - | - | 3Pins | 150°C | - | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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DN2540N3-G
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SC16921 |
Power MOSFET, N Channel, 400 V, 120 mA, 17 ohm, TO-92, Through Hole MICROCHIP The DN2540N3-G is a N-channel depletion-mode vertical DMOS FET utilizing an advanced vertical DMOS structure and Supertex's well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar t...
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- | - | - | - | - | - | 3Pins | 150°C | - | - | - |