Semiconductors - Discretes
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| Manufacturer Part No | Order Code | Description / Manufacturer | Availability | Price For |
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Quantity | Transistor Polarity | Collector Emitter Voltage Max | DC Collector Current | Continuous Collector Current | Power Dissipation | Transistor Case Style | Transistor Mounting | No. of Pins | Transition Frequency | DC Current Gain hFE | DC Current Gain hFE Min | Operating Temperature Max | Product Range | Qualification | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC817-16LT1G
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SC16059 |
Bipolar (BJT) Single Transistor, NPN, 45V, 500mA, 300mW, SOT-23, SMD ONSEMI The BC817-16LT1G is a NPN general purpose Bipolar Transistor designed for use in linear and switching applications. The device is housed in the package which is designed for lower power surface-mount applications. • AEC-Q101 qualified and PPAP capable
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NPN | 45V | 500mA | 500mA | 300mW | SOT-23 | Surface Mount | 3Pins | 100MHz | 100hFE | 100hFE | 150°C | BCxxx | AEC-Q101 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
STW4N150
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SC15828 |
Power MOSFET, N Channel, 1.5kV, 4A, 7 ohm, TO-247, STMICROELECTRONICS The STW4N150 is a 1500V N-channel Power MOSFET developed using the well consolidated high voltage MESH OVERLAY™ process. The strengthened layout coupled with the proprietary edge termination structure gives the lowest RDS (on) per area, unrivalled gate cha...
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- | - | - | - | 160W | TO-247 | Through Hole | 3Pins | - | - | - | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MBRS3100T3G
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SC17511 |
Schottky Rectifier, 100 V, 3 A, Single, DO-214AB (SMC), 2 Pins, 790 mV ONSEMI The MBRS3100T3G is a surface mount Schottky power Rectifier Diode with epoxy moulded case, all external surface corrosion-resistant and terminal leads are readily solderable finish and notch in plastic body indicates cathode lead polarity. The Schottky rec...
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- | - | - | - | - | - | - | 2Pins | - | - | - | 175°C | MBRS3 | AEC-Q101 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
T405Q-600B-TR
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SC17097 |
Triac, 600V, 4A, TO-252 (DPAK), 5mA, 1.3V, 500mW STMICROELECTRONICS • 4 quadrants sensitive triac • Intended for general purpose applications where surge current capability is required • MCU direct drive • Suitable for Motor control circuits, Small home appliances and Fan speed controller applications
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- | - | - | - | - | - | - | 3Pins | - | - | - | 125°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC846A
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SC16085 |
Bipolar (BJT) Single Transistor, NPN, 65V, 100mA, 300mW, SOT-23, SMD DIODES INC. The BC846A is a NPN small signal Bipolar Transistor ideally suitable for automatic insertion, switching and AF amplifier applications. • UL94V-0 Flammability rating • BC856 - BC858 Complementary PNP types • Halogen-free, Green device • -65 to 150°C Operati...
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NPN | 65V | 100mA | 100mA | 310mW | SOT-23 | Surface Mount | 3Pins | 300MHz | 180hFE | 110hFE | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BSN20BKR
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SC16765 |
Power MOSFET, Trench, N Channel, 60V, 265mA, 2.1 Ohm, SOT-23, SMD NEXPERIA The BSN20BK from Nexperia is a N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. • Suitable for relay drivers, high speed line drivers, low-side...
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- | - | - | - | 310mW | SOT-23 | Surface Mount | 3Pins | - | - | - | 150°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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DMP6023LE-13
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SC15971 |
Power MOSFET, P Channel, 60V, 18.2A, 0.028 Ohm, SOT-223, SMD DIODES INC. DMP6023LE-13 is a P-channel enhancement mode MOSFET. This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and maintain superior switching performance, making it ideal for high efficiency power management applications. Typical applications ...
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- | - | - | - | 17.3W | SOT-223 | Surface Mount | 4Pins | - | - | - | 150°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SI2301CDS-T1-GE3
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SC16862 |
Power MOSFET, P Channel, 20 V, 3.1 A, 0.09 ohm, SOT-23, Surface Mount VISHAY The SI2301CDS-T1-GE3 is a 20VDS TrenchFET® P-channel enhancement-mode Power MOSFET suitable for load switch applications. • Halogen-free • -55 to 150°C Operating temperature range
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- | - | - | - | 1.6W | SOT-23 | Surface Mount | 3Pins | - | - | - | 150°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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FDN352AP
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SC16755 |
Power MOSFET, P Channel, 30 V, 1.3 A, 0.18 ohm, SuperSOT, Surface Mount ONSEMI The FDN352AP is a P-channel Logic Level MOSFET produced using advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. This device is well suit...
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- | - | - | - | 500mW | SuperSOT | Surface Mount | 3Pins | - | - | - | 150°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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PMEG4010CEJ,115
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SC17552 |
Schottky Rectifier, 40 V, 1 A, Single, SOD-323F, 2 Pins, 570 mV NEXPERIA The PMEG4010CEJ,115 is a planar maximum efficiency general application (MEGA) Schottky barrier Rectifier Diode with an integrated guard ring for stress protection. The Low VF Schottky rectifier offers extremely low forward voltage drop during operation, re...
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- | - | - | - | - | - | - | 2Pins | - | - | - | 150°C | PMEG4 | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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B330A-13-F
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SC17573 |
Schottky Rectifier, 30 V, 3 A, Single, DO-214AC (SMA), 2 Pins, 500 mV DIODES INC. The B330A-13-F is a surface-mount Schottky Barrier Rectifier with moulded plastic case and solderable lead free matte tin-finish terminals as per MIL-STD-202 standard. It is suitable for use in low voltage, high frequency inverters, free-wheeling, DC-DC co...
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- | - | - | - | - | - | - | 2Pins | - | - | - | 125°C | B330A | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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B340-13-F
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SC17577 |
Schottky Rectifier, 40 V, 3 A, Single, DO-214AB (SMC), 2 Pins, 500 mV DIODES INC. The B340-13-F is a surface mount Schottky barrier Rectifier Diode with guard ring die construction for transient protection, lead-free plating (matte tin finish) terminals, UL94V-0 flame-rated moulded plastic case and cathode band polarity. Solderable term...
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- | - | - | - | - | - | - | 2Pins | - | - | - | 125°C | B340 | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MM3Z4V7ST1G
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SC18004 |
Zener Single Diode, 4.7 V, 300 mW, SOD-323, 2 Pins, 150 °C, Surface Mount ONSEMI The MM3Z4V7ST1G is a surface mount Voltage Regulator Zener Diode designed to provide voltage regulation protection and especially attractive in situations where space is at a premium. They are well suited for applications such as cellular phones, hand held...
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- | - | - | - | 300mW | - | - | 2Pins | - | - | - | 150°C | MM3Z4 | AEC-Q101 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BAT54WS-7-F
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SC17575 |
Small Signal Schottky Diode, Single, 30 V, 100 mA, 1 V, 600 mA, 150 °C DIODES INC. The BAT54WS-7-F is a surface mount Schottky Barrier Diode with lead-free matte tin-plated leads, UL94V-0 flame-rated moulded plastic case and cathode band polarity. Ultra high-speed switching and PN junction guard ring for transient and ESD protection. • 2...
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- | - | - | - | - | - | - | 2Pins | - | - | - | 150°C | BAT54 | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BAT54C-7-F
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SC17576 |
Small Signal Schottky Diode, Dual Common Cathode, 30 V, 100 mA, 800 mV, 600 mA, 150 °C DIODES INC. The BAT54C-7-F is a surface mount Schottky Barrier Diode encapsulated in a moulded plastic case. It has matte tin (lead-free plating) annealed over alloy 42 lead frame terminals and PN junction guard ring for transient and ESD protection. • Low turn-on vol...
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- | - | - | - | - | - | - | 3Pins | - | - | - | 150°C | BAT54 | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SR1504
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SC17591 |
Schottky Rectifier, 40 V, 15 A, Single, Axial Leaded, 2 Pins, 550 mV TAIWAN SEMICONDUCTOR The SR1504 is a Schottky Barrier Rectifier with matte tin-plated lead terminal and UL94V-0 R-6 case. The barrier rectifier features low forward voltage drop, high surge current capability, low power loss and high efficiency. • Guard ring for overvoltage pr...
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- | - | - | - | - | - | - | 2Pins | - | - | - | 150°C | SR150 | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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2N7002K-7
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SC15985 |
Power MOSFET, N Channel, 60V, 300mA, 2 Ohm, SOT-23, SMD DIODES INC. The 2N7002K-7 is an N-channel Enhancement Mode MOSFET designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. It features molded green plasti...
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- | - | - | - | 370mW | SOT-23 | Surface Mount | 3Pins | - | - | - | 150°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC817-40LT1G
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SC16051 |
Bipolar (BJT) Single Transistor, NPN, 45V, 500mA, 225mW, SOT-23, SMD ONSEMI The BC817-40LT1G is a 45V NPN silicon Bipolar Transistor designed for use in linear and switching applications. The device is suitable for lower power surface mount applications, ESD protection, polarity reversal protection, data line protection, inductive...
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NPN | 45V | 500mA | 500mA | 225mW | SOT-23 | Surface Mount | 3Pins | 100MHz | 250hFE | 250hFE | 150°C | - | AEC-Q101 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MJD45H11G
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SC16105 |
Bipolar (BJT) Single Transistor, Audio, PNP, 80V, 8A, 20W, TO-252 (DPAK), SMD ONSEMI The MJD45H11G is a 8A PNP bipolar Power Transistor designed for general purpose power and switching output or driver stages in applications such as switching regulators, converters and power amplifiers. • Electrically similar to popular D44H/D45H series • ...
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PNP | 80V | 8A | 8A | 20W | TO-252 (DPAK) | Surface Mount | 3Pins | 90MHz | 60hFE | 60hFE | 150°C | - | AEC-Q101 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BSS138LT3G
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SC15999 |
Power MOSFET, N Channel, 50V, 200mA, 5.6 Ohm, SOT-23, SMD ONSEMI The BSS138LT3G is a N-channel Power MOSFET with low threshold voltage and ideal for low voltage applications. Miniature surface mount package saves board space. • ±20VDC Continuous gate-to-source voltage • 556°C/W Junction-to-ambient thermal resistance
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- | - | - | - | 225mW | SOT-23 | Surface Mount | 3Pins | - | - | - | 150°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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T2035H-6I
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SC17105 |
Triac, 600V, 20A, TO-220AB, 1V, 1W STMICROELECTRONICS 20A - 600V H-series snubberless triac especially designed to operate in high power density or universal motor applications such as vacuum cleaner and washing machine drum motor. • Medium current triac • 150°C max. Tj turn-off commutation • Low thermal resi...
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- | - | - | - | - | - | - | - | - | - | - | 150°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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2N3904TA
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SC15823 |
Bipolar (BJT) Single Transistor, NPN, 40V, 200mA, 625mW, TO-92 ONSEMI The 2N3904 is a through hole, NPN general purpose transistor in TO-92 package which is designed for amplifier and switch application. The dynamic range of device extends to 100mA while operating as switch and it will be 100MHz for amplifier. • Collector to...
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NPN | 40V | - | 200mA | 625mW | TO-92 | Through Hole | 3Pins | - | - | 100hFE | 150°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC807-25,215
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SC16016 |
Bipolar (BJT) Single Transistor, PNP, 45V, -500mA, 250mW, SOT-23, SMD NEXPERIA The BC807-25 is a PNP general purpose Transistor with 3 leads, high current and low voltage, plastic surface mount package. Designed for switching and amplification applications. • 150°C Junction temperature • 5pF Collector capacitance
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PNP | 45V | 500mA | 500mA | 250mW | SOT-23 | Surface Mount | 3Pins | 100MHz | 160hFE | 160hFE | 150°C | BC807 | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BT137-600D,127
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SC17072 |
Triac, 600V, 8A, TO-220AB, 10mA, 1V, 5W WEEN SEMICONDUCTORS Planar passivated very sensitive gate four quadrant triac in a SOT78 plastic package intended for use in general purpose bidirectional switching and phase control applications, where high sensitivity is required in all four quadrants. This very sensitive g...
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- | - | - | - | - | - | - | 3Pins | - | - | - | 125°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SUM110P04-05-E3
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SC16869 |
Power MOSFET, P Channel, 40 V, 110 A, 0.0041 ohm, TO-263 (D2PAK), Surface Mount VISHAY The SUM110P04-05-E3 is a -40V P-channel TrenchFET® Power MOSFET.
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- | - | - | - | 375W | TO-263 (D2PAK) | Surface Mount | 3Pins | - | - | - | 175°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||