Semiconductors - Discretes
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Manufacturer Part No | Order Code | Description / Manufacturer | Availability | Price For |
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Quantity | Repetitive Peak Reverse Voltage | Average Forward Current | Diode Configuration | Diode Case Style | No. of Pins | Forward Voltage Max | Forward Surge Current | Operating Temperature Max | Diode Mounting | Product Range | Qualification | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MBR160RLG
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SC07405 |
Schottky Rectifier, 60 V, 1 A, Single, DO-41 (DO-204AL), 2 Pins, 750 mV ONSEMI The MBR160RLG is an axial-lead Schottky Rectifier with an epoxy moulded case. It employs the Schottky barrier principle in a large area metal-to-silicon power diode. The state-of-the-art geometry features epitaxial construction with oxide passivation and m...
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1+ €0.238 (€0.29) 10+ €0.1904 (€0.23) 100+ €0.1785 (€0.22) |
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60V | 1A | Single | DO-41 (DO-204AL) | 2Pins | 750mV | 25A | 150°C | Through Hole | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BF259MC
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SC06649 |
Transistor, NPN TO39 MULTICOMP PRO • No. of Pins : 3Pins
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1+ €0.714 (€0.88) 25+ €0.4165 (€0.51) |
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- | - | - | - | 3Pins | - | - | - | - | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TIP50G
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SC06808 |
Transistor, NPN, TO220 ONSEMI The TIP50G is a 400V Silicon NPN Bipolar High Voltage Power Transistor designed for line operated audio output amplifier, switch mode power supply drivers and other switching applications. • Collector-base voltage (Vcbo = 500V) • Emitter-base voltage (Vcbo...
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1+ €0.6069 (€0.75) 10+ €0.3689 (€0.45) 100+ €0.3213 (€0.40) |
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- | - | - | - | 3Pins | - | - | 150°C | - | TIPxxx | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
FDN358P
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SC07005 |
Power MOSFET, P Channel, 30 V, 1.6 A, 0.2 ohm, SOT-23, Surface Mount ONSEMI The FDN358P is a P-channel logic level MOSFET produced using advanced PowerTrench® process. It has been especially tailored to minimize the ON-state resistance and yet maintain low gate charge for superior switching performance. It comes with high power ve...
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- | - | - | - | 3Pins | - | - | 150°C | - | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
RFP12N10L
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SC11126 |
Power MOSFET, N Channel, 100 V, 12 A, 0.2 ohm, TO-220AB, Through Hole ONSEMI The RFP12N10L is a 100V N-channel logic level enhancement mode power MOSFET designed for logic level 5V driving sources in applications such as programmable controllers, automotive switching and solenoid drivers. This performance is accomplished through a ...
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1+ €0.9044 (€1.11) 25+ €0.6188 (€0.76) 100+ €0.4641 (€0.57) |
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- | - | - | - | 3Pins | - | - | 150°C | - | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC109B
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SC06718 |
Transistor, NPN, TO18 MULTICOMP PRO The BC109B is a 25V Silicon NPN Bipolar Planar Epitaxial Transistor with low power. • Collector-base voltage(Vcbo = 30V) • Emitter-base voltage(Vebo = 5V) • Multicomp Pro products are rated 4.6 out of 5 stars • 12 month limited warranty *view Terms & Condi...
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5+ €0.5355 (€0.66) 25+ €0.3927 (€0.48) 100+ €0.2856 (€0.35) 500+ €0.238 (€0.29) |
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- | - | - | - | 3Pins | - | - | 200°C | - | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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FDN337N
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SC06984 |
Power MOSFET, N Channel, 30 V, 2.2 A, 0.065 ohm, SuperSOT, Surface Mount ONSEMI The FDN337N is N channel logic level enhancement mode power field effect transistor in superSOT-3 package. This transistor is produced using high cell density, DMOS technology, very high density process is especially tailored to minimize on state resistanc...
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5+ €0.3808 (€0.47) 25+ €0.2975 (€0.37) |
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- | - | - | - | 3Pins | - | - | 150°C | - | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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VNP10N07-E
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SC11011 |
Power MOSFET, N Channel, 70 V, 10 A, 0.1 ohm, TO-220, Through Hole STMICROELECTRONICS The VNP10N07-E is a monolithic device fully auto protected Power MOSFET with ESD protection. The VNP10N07 is a monolithic device made using STMicroelectronics VIPower technology, intended for replacement of standard power MOSFETS in DC to 50kHz application...
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1+ €1.6898 (€2.08) 10+ €1.3685 (€1.68) 50+ €1.2138 (€1.49) |
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- | - | - | - | 3Pins | - | - | 150°C | - | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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GBPC1204-E4/51
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SC07515 |
Bridge Rectifier, Single Phase, 400 V, 12 A, Module, 4 Pins, 1.1 V VISHAY The GBPC1204-E4/51 is a 4-pin single-phase glass passivated Bridge Rectifier Diode with high surge current capability. It is general purpose use in AC/DC bridge full wave rectification for home appliances, office equipment and telecommunication application...
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1+ €3.8556 (€4.74) 10+ €3.3915 (€4.17) 100+ €3.0107 (€3.70) |
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400V | 12A | - | - | 4Pins | 1.1V | 200A | 150°C | - | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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FZT753
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SC10981 |
Transistor, PNP, SOT223 DIODES INC. FZT753 is a 100V, 2A PNP silicon planar medium power transistor in a 4 pin SOT-223 package. • Low saturation voltage • Excellent hFE specified up to 2A • Complementary NPN type FZT653 • 2W power dissipation
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1+ €0.3451 (€0.42) 25+ €0.3094 (€0.38) 100+ €0.2856 (€0.35) |
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- | - | - | - | 4Pins | - | - | 150°C | - | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRFB4710PBF
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SC11091 |
Power MOSFET, N Channel, 100 V, 75 A, 0.014 ohm, TO-220AB, Through Hole INFINEON The IRFB4710PBF is a HEXFET® single N-channel Power MOSFET offers low gate-to-drain charge to reduce switching losses. It is suitable for high frequency DC-to-DC converters. • Fully characterized capacitance including effective COSS to simplify design • Fu...
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1+ €2.1301 (€2.62) 25+ €1.7612 (€2.17) 100+ €1.547 (€1.90) 250+ €1.3447 (€1.65) |
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- | - | - | - | 3Pins | - | - | - | - | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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1N5342BG
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SC07170 |
Zener Single Diode, 6.8 V, 5 W, 017AA, 2 Pins, 200 °C, Through Hole ONSEMI The 1N5333B series Surmetic™ Voltage Regulator Zener Diode with tight limits and better operating characteristics that reflect the superior capabilities of silicon-oxide passivated junctions. All this in an axial lead, transfer-moulded plastic package that...
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5+ €0.3332 (€0.41) 25+ €0.2975 (€0.37) 100+ €0.2499 (€0.31) |
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- | - | - | 017AA | 2Pins | - | - | 200°C | Through Hole | 1N53 Series | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRFPC50
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SC06289 |
Power MOSFET, N Channel, 600 V, 11 A, 0.6 ohm, TO-247AC, Through Hole VISHAY • No. of Pins : 3Pins • Operating Temperature Max : 150°C
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- | - | - | - | 3Pins | - | - | 150°C | - | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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FDN360P
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SC07006 |
Power MOSFET, P Channel, 30 V, 2 A, 0.08 ohm, SOT-23, Surface Mount ONSEMI The FDN360P is a surface mount, single P channel PowerTrench MOSFET in superSOT-23 package. PowerTrench process has been tailored to minimize the onstate resistance and maintain low gate charge for superior switching performance. This device is well suited...
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- | - | - | - | 3Pins | - | - | 150°C | - | PowerTrench® MOSFET | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BS170
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SC06956 |
Power MOSFET, N Channel, 60 V, 500 mA, 1.2 ohm, TO-92, Through Hole ONSEMI The BS170 is a N-channel enhancement mode Field Effect Transistor is produced using high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance while provide rugged, reliable and fast switching perfo...
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- | - | - | - | 3Pins | - | - | 150°C | - | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MBR1100RLG
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SC07392 |
Schottky Rectifier, 100 V, 1 A, Single, DO-41 (DO-204AL), 2 Pins, 790 mV ONSEMI The MBR1100RLG is an axial-lead Schottky Rectifier with epoxy moulded case. It employs the Schottky barrier principle in a large area metal-to-silicon power diode. The state-of-the-art geometry features epitaxial construction with oxide passivation and met...
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100V | 1A | Single | DO-41 (DO-204AL) | 2Pins | 790mV | 50A | 175°C | Through Hole | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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FQA70N10.
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SC06322 |
Power MOSFET, N Channel, 100 V, 70 A, 0.023 ohm, TO-3P, Through Hole ONSEMI • No. of Pins : 3Pins
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- | - | - | - | 3Pins | - | - | - | - | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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STTH102A
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SC11402 |
Fast / Ultrafast Diode, 200 V, 1 A, Single, 900 mV, 20 ns, 40 A STMICROELECTRONICS The STTH102A is a high-efficiency Ultra-fast Diode especially suitable for switching mode base drive and transistor circuits. The device is also intended for use as a free-wheeling diode in power supplies and other power switching applications. • Very low ...
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200V | 1A | Single | DO-214AC (SMA) | - | 900mV | 40A | 175°C | - | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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1N5384BG
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SC07207 |
Zener Single Diode, 160 V, 5 W, 017AA, 2 Pins, 200 °C, Through Hole ONSEMI The 1N5333B series Surmetic™ Voltage Regulator Zener Diode with tight limits and better operating characteristics that reflect the superior capabilities of silicon-oxide passivated junctions. All this in an axial lead, transfer-moulded plastic package that...
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- | - | - | 017AA | 2Pins | - | - | 200°C | Through Hole | 1N53 Series | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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TIP31C
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SC06756 |
Transistor, NPN, TO220 MULTICOMP PRO The TIP31C is a high-performance transistor designed to handle high currents and voltages, making it an ideal choice for demanding applications such as audio amplifiers, power supplies, and switching circuits. With its high current handling capability and ...
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- | - | - | - | 3Pins | - | - | 150°C | - | Bipolar Single Transistor, NPN | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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1N5363BG
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SC07189 |
Zener Single Diode, 30 V, 5 W, 017AA, 2 Pins, 200 °C, Through Hole ONSEMI The 1N5363BG is a Surmetic™ 40 axial-leaded Zener Voltage Regulator with a void-free transfer-molded thermosetting plastic case, all external surfaces are corrosion-resistant and lead is readily solderable. The voltage regulator has tight limits and better...
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- | - | - | 017AA | 2Pins | - | - | 200°C | Through Hole | 1N53 Series | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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VS-50RIA60
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SC11505 |
Thyristor, 50A, 600V, TO65 VISHAY The VS-50RIA60 is a 50A stud version medium power Phase Control Thyristor offers superior surge capabilities. • High current rating • Excellent dynamic characteristics • dV/dt = 1000V/μs option • Single SCR diode variation
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1+ €15.1844 (€18.68) 10+ €13.6612 (€16.80) 25+ €12.138 (€14.93) 50+ €10.6267 (€13.07) |
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600V | 50A | - | - | - | - | - | 125°C | - | VS-50RIA | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BZV55-C27.
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SC11228 |
Zener Single Diode, 27 V, 500 mW, SOD-80C, 2 Pins, 200 °C, Surface Mount NXP The BZV55 series low-power voltage regulator Zener Diode designed in a small hermetically sealed glass SOD80C surface-mounted device (SMD) package. It is suitable for general regulation functions. • ≤40W Non-repetitive peak reverse power dissipation • 2.4 ...
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- | - | - | SOD-80C | 2Pins | - | - | 200°C | Surface Mount | BZV55 | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BZX79-C75.
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SC05717 |
Zener Single Diode, 75 V, 500 mW, DO-35, 2 Pins, 200 °C NXP • Diode Case Style : DO-35 • No. of Pins : 2Pins • Operating Temperature Max : 200°C • Product Range : BZX79
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- | - | - | DO-35 | 2Pins | - | - | 200°C | - | BZX79 | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BDX34C
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SC10997 |
Darlington Transistor, TO220 STMICROELECTRONICS The BDX34C is a -100V Silicon Epitaxial Base PNP Power Transistor in monolithic Darlington configuration. It is intended for use in power linear and switching applications. Fast switching times and very low saturation voltage resulting in reduced switching...
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- | - | - | - | 3Pins | - | - | 150°C | - | - | - |