Semiconductors - Discretes

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Repetitive Peak Reverse Voltage Average Forward Current Diode Configuration Diode Case Style No. of Pins Forward Voltage Max Forward Surge Current Operating Temperature Max Diode Mounting Product Range Qualification
 
 
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MBR160RLG
MBR160RLG - Schottky Rectifier, 60 V, 1 A, Single, DO-41 (DO-204AL), 2 Pins, 750 mV

SC07405

Schottky Rectifier, 60 V, 1 A, Single, DO-41 (DO-204AL), 2 Pins, 750 mV

ONSEMI

The MBR160RLG is an axial-lead Schottky Rectifier with an epoxy moulded case. It employs the Schottky barrier principle in a large area metal-to-silicon power diode. The state-of-the-art geometry features epitaxial construction with oxide passivation and m...

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60V 1A Single DO-41 (DO-204AL) 2Pins 750mV 25A 150°C Through Hole - -
BF259MC
BF259MC - Transistor, NPN TO39

SC06649

Transistor, NPN TO39

MULTICOMP PRO

• No. of Pins : 3Pins

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- - - - 3Pins - - - - - -
TIP50G
TIP50G - Transistor, NPN, TO220

SC06808

Transistor, NPN, TO220

ONSEMI

The TIP50G is a 400V Silicon NPN Bipolar High Voltage Power Transistor designed for line operated audio output amplifier, switch mode power supply drivers and other switching applications. • Collector-base voltage (Vcbo = 500V) • Emitter-base voltage (Vcbo...

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- - - - 3Pins - - 150°C - TIPxxx -
FDN358P
FDN358P - Power MOSFET, P Channel, 30 V, 1.6 A, 0.2 ohm, SOT-23, Surface Mount

SC07005

Power MOSFET, P Channel, 30 V, 1.6 A, 0.2 ohm, SOT-23, Surface Mount

ONSEMI

The FDN358P is a P-channel logic level MOSFET produced using advanced PowerTrench® process. It has been especially tailored to minimize the ON-state resistance and yet maintain low gate charge for superior switching performance. It comes with high power ve...

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- - - - 3Pins - - 150°C - - -
RFP12N10L
RFP12N10L - Power MOSFET, N Channel, 100 V, 12 A, 0.2 ohm, TO-220AB, Through Hole

SC11126

Power MOSFET, N Channel, 100 V, 12 A, 0.2 ohm, TO-220AB, Through Hole

ONSEMI

The RFP12N10L is a 100V N-channel logic level enhancement mode power MOSFET designed for logic level 5V driving sources in applications such as programmable controllers, automotive switching and solenoid drivers. This performance is accomplished through a ...

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- - - - 3Pins - - 150°C - - -
BC109B
BC109B - Transistor, NPN, TO18

SC06718

Transistor, NPN, TO18

MULTICOMP PRO

The BC109B is a 25V Silicon NPN Bipolar Planar Epitaxial Transistor with low power. • Collector-base voltage(Vcbo = 30V) • Emitter-base voltage(Vebo = 5V) • Multicomp Pro products are rated 4.6 out of 5 stars • 12 month limited warranty *view Terms & Condi...

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- - - - 3Pins - - 200°C - - -
FDN337N
FDN337N - Power MOSFET, N Channel, 30 V, 2.2 A, 0.065 ohm, SuperSOT, Surface Mount

SC06984

Power MOSFET, N Channel, 30 V, 2.2 A, 0.065 ohm, SuperSOT, Surface Mount

ONSEMI

The FDN337N is N channel logic level enhancement mode power field effect transistor in superSOT-3 package. This transistor is produced using high cell density, DMOS technology, very high density process is especially tailored to minimize on state resistanc...

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- - - - 3Pins - - 150°C - - -
VNP10N07-E
VNP10N07-E - Power MOSFET, N Channel, 70 V, 10 A, 0.1 ohm, TO-220, Through Hole

SC11011

Power MOSFET, N Channel, 70 V, 10 A, 0.1 ohm, TO-220, Through Hole

STMICROELECTRONICS

The VNP10N07-E is a monolithic device fully auto protected Power MOSFET with ESD protection. The VNP10N07 is a monolithic device made using STMicroelectronics VIPower technology, intended for replacement of standard power MOSFETS in DC to 50kHz application...

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- - - - 3Pins - - 150°C - - -
GBPC1204-E4/51
GBPC1204-E4/51 - Bridge Rectifier, Single Phase, 400 V, 12 A, Module, 4 Pins, 1.1 V

SC07515

Bridge Rectifier, Single Phase, 400 V, 12 A, Module, 4 Pins, 1.1 V

VISHAY

The GBPC1204-E4/51 is a 4-pin single-phase glass passivated Bridge Rectifier Diode with high surge current capability. It is general purpose use in AC/DC bridge full wave rectification for home appliances, office equipment and telecommunication application...

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400V 12A - - 4Pins 1.1V 200A 150°C - - -
FZT753
FZT753 - Transistor, PNP, SOT223

SC10981

Transistor, PNP, SOT223

DIODES INC.

FZT753 is a 100V, 2A PNP silicon planar medium power transistor in a 4 pin SOT-223 package. • Low saturation voltage • Excellent hFE specified up to 2A • Complementary NPN type FZT653 • 2W power dissipation

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- - - - 4Pins - - 150°C - - -
IRFB4710PBF
IRFB4710PBF - Power MOSFET, N Channel, 100 V, 75 A, 0.014 ohm, TO-220AB, Through Hole

SC11091

Power MOSFET, N Channel, 100 V, 75 A, 0.014 ohm, TO-220AB, Through Hole

INFINEON

The IRFB4710PBF is a HEXFET® single N-channel Power MOSFET offers low gate-to-drain charge to reduce switching losses. It is suitable for high frequency DC-to-DC converters. • Fully characterized capacitance including effective COSS to simplify design • Fu...

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- - - - 3Pins - - - - - -
1N5342BG
1N5342BG - Zener Single Diode, 6.8 V, 5 W, 017AA, 2 Pins, 200 °C, Through Hole

SC07170

Zener Single Diode, 6.8 V, 5 W, 017AA, 2 Pins, 200 °C, Through Hole

ONSEMI

The 1N5333B series Surmetic™ Voltage Regulator Zener Diode with tight limits and better operating characteristics that reflect the superior capabilities of silicon-oxide passivated junctions. All this in an axial lead, transfer-moulded plastic package that...

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- - - 017AA 2Pins - - 200°C Through Hole 1N53 Series -
IRFPC50
IRFPC50 - Power MOSFET, N Channel, 600 V, 11 A, 0.6 ohm, TO-247AC, Through Hole

SC06289

Power MOSFET, N Channel, 600 V, 11 A, 0.6 ohm, TO-247AC, Through Hole

VISHAY

• No. of Pins : 3Pins • Operating Temperature Max : 150°C

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- - - - 3Pins - - 150°C - - -
FDN360P
FDN360P - Power MOSFET, P Channel, 30 V, 2 A, 0.08 ohm, SOT-23, Surface Mount

SC07006

Power MOSFET, P Channel, 30 V, 2 A, 0.08 ohm, SOT-23, Surface Mount

ONSEMI

The FDN360P is a surface mount, single P channel PowerTrench MOSFET in superSOT-23 package. PowerTrench process has been tailored to minimize the onstate resistance and maintain low gate charge for superior switching performance. This device is well suited...

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- - - - 3Pins - - 150°C - PowerTrench® MOSFET -
BS170
BS170 - Power MOSFET, N Channel, 60 V, 500 mA, 1.2 ohm, TO-92, Through Hole

SC06956

Power MOSFET, N Channel, 60 V, 500 mA, 1.2 ohm, TO-92, Through Hole

ONSEMI

The BS170 is a N-channel enhancement mode Field Effect Transistor is produced using high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance while provide rugged, reliable and fast switching perfo...

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- - - - 3Pins - - 150°C - - -
MBR1100RLG
MBR1100RLG - Schottky Rectifier, 100 V, 1 A, Single, DO-41 (DO-204AL), 2 Pins, 790 mV

SC07392

Schottky Rectifier, 100 V, 1 A, Single, DO-41 (DO-204AL), 2 Pins, 790 mV

ONSEMI

The MBR1100RLG is an axial-lead Schottky Rectifier with epoxy moulded case. It employs the Schottky barrier principle in a large area metal-to-silicon power diode. The state-of-the-art geometry features epitaxial construction with oxide passivation and met...

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100V 1A Single DO-41 (DO-204AL) 2Pins 790mV 50A 175°C Through Hole - -
FQA70N10.
FQA70N10. - Power MOSFET, N Channel, 100 V, 70 A, 0.023 ohm, TO-3P, Through Hole

SC06322

Power MOSFET, N Channel, 100 V, 70 A, 0.023 ohm, TO-3P, Through Hole

ONSEMI

• No. of Pins : 3Pins

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- - - - 3Pins - - - - - -
STTH102A
STTH102A - Fast / Ultrafast Diode, 200 V, 1 A, Single, 900 mV, 20 ns, 40 A

SC11402

Fast / Ultrafast Diode, 200 V, 1 A, Single, 900 mV, 20 ns, 40 A

STMICROELECTRONICS

The STTH102A is a high-efficiency Ultra-fast Diode especially suitable for switching mode base drive and transistor circuits. The device is also intended for use as a free-wheeling diode in power supplies and other power switching applications. • Very low ...

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200V 1A Single DO-214AC (SMA) - 900mV 40A 175°C - - -
1N5384BG
1N5384BG - Zener Single Diode, 160 V, 5 W, 017AA, 2 Pins, 200 °C, Through Hole

SC07207

Zener Single Diode, 160 V, 5 W, 017AA, 2 Pins, 200 °C, Through Hole

ONSEMI

The 1N5333B series Surmetic™ Voltage Regulator Zener Diode with tight limits and better operating characteristics that reflect the superior capabilities of silicon-oxide passivated junctions. All this in an axial lead, transfer-moulded plastic package that...

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- - - 017AA 2Pins - - 200°C Through Hole 1N53 Series -
TIP31C
TIP31C - Transistor, NPN, TO220

SC06756

Transistor, NPN, TO220

MULTICOMP PRO

The TIP31C is a high-performance transistor designed to handle high currents and voltages, making it an ideal choice for demanding applications such as audio amplifiers, power supplies, and switching circuits. With its high current handling capability and ...

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- - - - 3Pins - - 150°C - Bipolar Single Transistor, NPN -
1N5363BG
1N5363BG - Zener Single Diode, 30 V, 5 W, 017AA, 2 Pins, 200 °C, Through Hole

SC07189

Zener Single Diode, 30 V, 5 W, 017AA, 2 Pins, 200 °C, Through Hole

ONSEMI

The 1N5363BG is a Surmetic™ 40 axial-leaded Zener Voltage Regulator with a void-free transfer-molded thermosetting plastic case, all external surfaces are corrosion-resistant and lead is readily solderable. The voltage regulator has tight limits and better...

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- - - 017AA 2Pins - - 200°C Through Hole 1N53 Series -
VS-50RIA60
VS-50RIA60 - Thyristor, 50A, 600V, TO65

SC11505

Thyristor, 50A, 600V, TO65

VISHAY

The VS-50RIA60 is a 50A stud version medium power Phase Control Thyristor offers superior surge capabilities. • High current rating • Excellent dynamic characteristics • dV/dt = 1000V/μs option • Single SCR diode variation

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600V 50A - - - - - 125°C - VS-50RIA -
BZV55-C27.
BZV55-C27. - Zener Single Diode, 27 V, 500 mW, SOD-80C, 2 Pins, 200 °C, Surface Mount

SC11228

Zener Single Diode, 27 V, 500 mW, SOD-80C, 2 Pins, 200 °C, Surface Mount

NXP

The BZV55 series low-power voltage regulator Zener Diode designed in a small hermetically sealed glass SOD80C surface-mounted device (SMD) package. It is suitable for general regulation functions. • ≤40W Non-repetitive peak reverse power dissipation • 2.4 ...

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- - - SOD-80C 2Pins - - 200°C Surface Mount BZV55 -
BZX79-C75.
BZX79-C75. - Zener Single Diode, 75 V, 500 mW, DO-35, 2 Pins, 200 °C

SC05717

Zener Single Diode, 75 V, 500 mW, DO-35, 2 Pins, 200 °C

NXP

• Diode Case Style : DO-35 • No. of Pins : 2Pins • Operating Temperature Max : 200°C • Product Range : BZX79

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- - - DO-35 2Pins - - 200°C - BZX79 -
BDX34C
BDX34C - Darlington Transistor, TO220

SC10997

Darlington Transistor, TO220

STMICROELECTRONICS

The BDX34C is a -100V Silicon Epitaxial Base PNP Power Transistor in monolithic Darlington configuration. It is intended for use in power linear and switching applications. Fast switching times and very low saturation voltage resulting in reduced switching...

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- - - - 3Pins - - 150°C - - -