Semiconductors - Discretes

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  Manufacturer Part No Order Code Description / Manufacturer
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Channel Type Drain Source Voltage Vds Continuous Drain Current Id Drain Source On State Resistance Transistor Case Style Transistor Mounting Rds(on) Test Voltage Gate Source Threshold Voltage Max Power Dissipation No. of Pins Operating Temperature Max Product Range Qualification
 
 
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IRFR9024PBF
IRFR9024PBF - Power MOSFET, P Channel, 60 V, 8.8 A, 0.28 ohm, TO-252 (DPAK), Surface Mount

SC11199

Power MOSFET, P Channel, 60 V, 8.8 A, 0.28 ohm, TO-252 (DPAK), Surface Mount

VISHAY

The IRFR9024PBF is a -60V P-channel Power MOSFET designed for fast switching, rugged device design and low on-resistance. The DPAK is designed for surface mounting using vapour phase, infrared or wave soldering techniques. The straight lead version (IRFU, ...

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P Channel 60V 8.8A 0.28ohm TO-252 (DPAK) Surface Mount 10V 4V 42W 3Pins 150°C - -
VS-GBPC2512A
VS-GBPC2512A - Bridge Rectifier, Single Phase, 1.2 kV, 25 A, Module, 4 Pins, 1.1 V

SC07522

Bridge Rectifier, Single Phase, 1.2 kV, 25 A, Module, 4 Pins, 1.1 V

VISHAY

The VS-GBPC2512A is a 4-pin single-phase compact Power Bridge Rectifier Diode offers efficient and reliable operation. The device is intended for use in general purpose applications. It has nickel-plated standard fast-on terminals solderable using lead (Pb...

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- - - - - - - - - 4Pins 150°C VS-GBPC Series -
IRLML2402PBF
IRLML2402PBF - Power MOSFET, N Channel, 20 V, 1.2 A, 0.25 ohm, SOT-23, Surface Mount

SC06986

Power MOSFET, N Channel, 20 V, 1.2 A, 0.25 ohm, SOT-23, Surface Mount

INFINEON

The IRLML2402PBF is a N-channel HEXFET® Power MOSFET with lower switch losses and increased reliability. The international rectifier utilizes advanced processing techniques to achieve extremely low on-resistant per silicon area. This benefit, combined with...

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N Channel 20V 1.2A 0.25ohm SOT-23 Surface Mount 4.5V 700mV 540mW 3Pins 150°C - -
BZT03C30-TR
BZT03C30-TR - Zener Single Diode, 30 V, 3.25 W, SOD-57, 2 Pins, 175 °C, Through Hole

SC07139

Zener Single Diode, 30 V, 3.25 W, SOD-57, 2 Pins, 175 °C, Through Hole

VISHAY

The BZT03 series Zener Diode with glass passivated junction and hermetically sealed package. It is used in medium power voltage regulators and medium power transient suppression circuits. • Clamping time in picoseconds • UL94V-0 Moulding compound flammabil...

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- - - - - - - - 3.25W 2Pins 175°C BZT03 Series AEC-Q101
BC549C
BC549C - Transistor, NPN, TO92

SC12757

Transistor, NPN, TO92

MULTICOMP PRO

The BC549C from Multicomp Pro are through hole, NPN silicon planar epitaxial general purpose transistor in TO-92 metal can package. This device is typically used in driver stages of audio amplifiers, tape recorders, low noise input stages, Hi-Fi amplifiers...

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- - - - TO-92 Through Hole - - 625mW 3Pins 150°C Multicomp Pro Bipolar Transistor -
BU406
BU406 - Transistor, NPN, TO220

SC06796

Transistor, NPN, TO220

MULTICOMP PRO

The BU406 is a NPN Power Transistor for horizontal deflection output stages of TV and CTV circuits. • High voltage • Collector-emitter sustaining voltage (Vceo (sus) = 400V minimum) • Low saturation voltage • Fast switching speed • Multicomp Pro products a...

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- - - - TO-220 Through Hole - - 60W 3Pins 150°C Multicomp Pro Bipolar Power Transistors NPN -
W01G-E4/51
W01G-E4/51 - Bridge Rectifier, Single Phase, 100 V, 1.5 A, Through Hole, 4 Pins, 1 V

SC08149

Bridge Rectifier, Single Phase, 100 V, 1.5 A, Through Hole, 4 Pins, 1 V

VISHAY

The W01G-E4/51 is a single phase glass passivated Bridge Rectifier with silver-plated leads terminals and UL94V-0 flammability-rated case. Polarity as marked on the body. High case dielectric strength and High surge current capability. Ideal for printed ci...

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- - - - - - - - - 4Pins 150°C W01G -
BZX79-C3V0.
BZX79-C3V0. - Zener Single Diode, 3 V, 500 mW, DO-35, 2 Pins, 200 °C

SC05690

Zener Single Diode, 3 V, 500 mW, DO-35, 2 Pins, 200 °C

NXP

• Power Dissipation : 500mW • No. of Pins : 2Pins • Operating Temperature Max : 200°C • Product Range : BZX79

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- - - - - - - - 500mW 2Pins 200°C BZX79 -
IRF2907ZPBF
IRF2907ZPBF - Power MOSFET, N Channel, 75 V, 170 A, 0.0045 ohm, TO-220, Through Hole

SC08253

Power MOSFET, N Channel, 75 V, 170 A, 0.0045 ohm, TO-220, Through Hole

INFINEON

The IRF2907ZPBF is a HEXFET® single N-channel Power MOSFET utilizes the latest processing techniques to achieve extremely low ON-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching spee...

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N Channel - - 0.0045ohm - Through Hole - - 330W 3Pins - - -
SR504
SR504 - Schottky Rectifier, 40 V, 5 A, Single, DO-201AD, 2 Pins, 550 mV

SC07449

Schottky Rectifier, 40 V, 5 A, Single, DO-201AD, 2 Pins, 550 mV

TAIWAN SEMICONDUCTOR

The SR504 is a Schottky Barrier Rectifier with moulded plastic case and solderable axial-lead as per MIL- STD-202 standard. • Colour band denotes cathode end • Low forward voltage drop • High current capability • High reliability • High surge current capab...

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- - - - - - - - - 2Pins 125°C SR5xx Series -
ZVN3310F
ZVN3310F - Power MOSFET, N Channel, 100 V, 100 mA, 10 ohm, SOT-23, Surface Mount

SC07001

Power MOSFET, N Channel, 100 V, 100 mA, 10 ohm, SOT-23, Surface Mount

DIODES INC.

The ZVN3310F is an N-channel Enhancement Mode MOSFET utilizes a structure that combines low input capacitance with relatively low on-resistance and has an intrinsically higher pulse current handling capability in linear mode than a comparable trench techno...

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N Channel 100V 100mA 10ohm SOT-23 Surface Mount 10V 2.4V 330mW 3Pins 150°C - -
IRF3205ZPBF
IRF3205ZPBF - Power MOSFET, Automotive, N Channel, 55 V, 110 A, 0.0065 ohm, TO-220AB, Through Hole

SC11149

Power MOSFET, Automotive, N Channel, 55 V, 110 A, 0.0065 ohm, TO-220AB, Through Hole

INFINEON

The IRF3205ZPBF is a HEXFET® N-channel Power MOSFET utilizes the latest processing techniques to achieve extremely low ON-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and i...

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N Channel 55V 110A 0.0065ohm - Through Hole 10V 4V 170W 3Pins 175°C - -
HUF75339P3
HUF75339P3 - Power MOSFET, N Channel, 55 V, 75 A, 0.012 ohm, TO-220AB, Through Hole

SC12748

Power MOSFET, N Channel, 55 V, 75 A, 0.012 ohm, TO-220AB, Through Hole

ONSEMI

The HUF75339P3 is a 55V N-channel UltraFET Power MOSFET. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche...

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N Channel 55V 75A 0.012ohm TO-220AB Through Hole 10V 4V 200W 3Pins 175°C - -
GBU8D
GBU8D - Bridge Rectifier, Single Phase, 200 V, 8 A, SIP, 4 Pins, 1 V

SC07509

Bridge Rectifier, Single Phase, 200 V, 8 A, SIP, 4 Pins, 1 V

ONSEMI

The GBU8D is a Bridge Rectifier with moulded plastic construction and glass-passivated junction. This bridge rectifier is general usage and suitable for many different applications. • 140V Maximum RMS bridge input voltage • 16W Power dissipation • UL Certi...

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- - - - - - - - - 4Pins 150°C GBU8D -
BZV85-C6V2
BZV85-C6V2 - Zener Single Diode, 6.2 V, 1 W, DO-41 (DO-204AL), 2 Pins, 200 °C

SC07091

Zener Single Diode, 6.2 V, 1 W, DO-41 (DO-204AL), 2 Pins, 200 °C

NXP

• Power Dissipation : 1W • No. of Pins : 2Pins • Operating Temperature Max : 200°C • Product Range : BZV85

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- - - - - - - - 1W 2Pins 200°C BZV85 -
D45H8G
D45H8G - Transistor, PNP, TO220

SC06761

Transistor, PNP, TO220

ONSEMI

The D45H8G is a 10A PNP bipolar Power Transistor offers low collector-emitter saturation voltage. It can be used as general purpose power amplification and switching such as output or driver stages in applications such as switching regulators, converters a...

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- - - - TO-220 Through Hole - - 70W 3Pins 150°C - -
BZX79-C7V5.
BZX79-C7V5. - Zener Single Diode, 7.5 V, 500 mW, DO-35, 2 Pins, 200 °C

SC05700

Zener Single Diode, 7.5 V, 500 mW, DO-35, 2 Pins, 200 °C

NXP

• Power Dissipation : 500mW • No. of Pins : 2Pins • Operating Temperature Max : 200°C • Product Range : BZX79

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- - - - - - - - 500mW 2Pins 200°C BZX79 -
MBR1045G
MBR1045G - Schottky Rectifier, 45 V, 10 A, Single, TO-220AC, 2 Pins, 570 mV

SC07390

Schottky Rectifier, 45 V, 10 A, Single, TO-220AC, 2 Pins, 570 mV

ONSEMI

The MBR1045G is a SWITCHMODE™ Power Schottky Barrier Rectifier with epoxy moulded case. • All external surfaces corrosion-resistant • Low forward voltage • Low power loss/high efficiency • UL94V-0 Flammability rating

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- - - - - - - - - 2Pins 175°C - -
GBU6D-E3/45
GBU6D-E3/45 - Bridge Rectifier, Single Phase, 200 V, 6 A, SIP, 4 Pins, 1 V

SC07504

Bridge Rectifier, Single Phase, 200 V, 6 A, SIP, 4 Pins, 1 V

VISHAY

• No. of Pins : 4Pins • Operating Temperature Max : 150°C

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- - - - - - - - - 4Pins 150°C - -
IRF3415PBF
IRF3415PBF - Power MOSFET, N Channel, 150 V, 37 A, 0.042 ohm, TO-220AB, Through Hole

SC11109

Power MOSFET, N Channel, 150 V, 37 A, 0.042 ohm, TO-220AB, Through Hole

INFINEON

The IRF3415PBF is a HEXFET® fifth generation single N-channel Power MOSFET utilizes advanced processing techniques to achieve extremely low ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design, pr...

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N Channel 150V 37A 0.042ohm - Through Hole 10V 4V 150W 3Pins 175°C - -
SPW17N80C3
SPW17N80C3 - Power MOSFET, N Channel, 800 V, 17 A, 0.29 ohm, TO-247, Through Hole

SC11162

Power MOSFET, N Channel, 800 V, 17 A, 0.29 ohm, TO-247, Through Hole

INFINEON

The SPW17N80C3 is a Cool MOS™ Power Transistor with ultra low gate charge, new revolutionary high voltage technology, extreme dv/dt rated and periodic avalanche rated. • ±20V Gate-source voltage • 260°C Soldering temperature

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N Channel 800V 17A 0.29ohm TO-247 Through Hole 10V 3V 208W 3Pins 150°C - -
SMBT3904
SMBT3904 - Transistor, NPN, SOT23

SC10623

Transistor, NPN, SOT23

INFINEON

• Transistor Case Style : SOT-23 • Transistor Mounting : Surface Mount • Power Dissipation : 330mW • No. of Pins : 3Pins • Operating Temperature Max : 150°C

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- - - - SOT-23 Surface Mount - - 330mW 3Pins 150°C - -
2N5551
2N5551 - Si-N 180V 0.6A 0.31W TO92 Q14

SC06652

Si-N 180V 0.6A 0.31W TO92 Q14

ONSEMI

The 2N5551 is a through hole, NPN general purpose amplifier in TO-92 package. This device is designed for general purpose high voltage amplifiers and gas discharge display drivers. • Collector to emitter breakdown voltage of 160V • Collector to emitter sat...

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- - - - - Through Hole - - 625mW 3Pins 150°C - -
FZT653
FZT653 - Transistor, NPN, SOT223

SC10978

Transistor, NPN, SOT223

DIODES INC.

The FZT653 is a NPN High Performance Transistor with matte tin-plated terminals, UL94V-0-flame rated moulded plastic case, solderable terminals as per MIL-STD-202, method 208 standard. • Complement to FZT753 • Level-1 per J-STD-020 moisture sensitivity • G...

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- - - - SOT-223 Surface Mount - - 2W 4Pins 150°C - -
IRF9520PBF
IRF9520PBF - Power MOSFET, P Channel, 100 V, 6 A, 0.6 ohm, TO-220AB, Through Hole

SC11123

Power MOSFET, P Channel, 100 V, 6 A, 0.6 ohm, TO-220AB, Through Hole

VISHAY

The IRF9520PBF is a -100V P-channel Power MOSFET provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The low thermal resistance contributes to its wide acceptance throughout...

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P Channel 100V 6A 0.6ohm TO-220AB Through Hole 10V 4V 40W 3Pins 175°C - -