Semiconductors - Discretes
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Manufacturer Part No | Order Code | Description / Manufacturer | Availability | Price For |
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Quantity | Channel Type | Drain Source Voltage Vds | Continuous Drain Current Id | Drain Source On State Resistance | Transistor Case Style | Transistor Mounting | Rds(on) Test Voltage | Gate Source Threshold Voltage Max | Power Dissipation | No. of Pins | Operating Temperature Max | Product Range | Qualification | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRFR9024PBF
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SC11199 |
Power MOSFET, P Channel, 60 V, 8.8 A, 0.28 ohm, TO-252 (DPAK), Surface Mount VISHAY The IRFR9024PBF is a -60V P-channel Power MOSFET designed for fast switching, rugged device design and low on-resistance. The DPAK is designed for surface mounting using vapour phase, infrared or wave soldering techniques. The straight lead version (IRFU, ...
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P Channel | 60V | 8.8A | 0.28ohm | TO-252 (DPAK) | Surface Mount | 10V | 4V | 42W | 3Pins | 150°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
VS-GBPC2512A
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SC07522 |
Bridge Rectifier, Single Phase, 1.2 kV, 25 A, Module, 4 Pins, 1.1 V VISHAY The VS-GBPC2512A is a 4-pin single-phase compact Power Bridge Rectifier Diode offers efficient and reliable operation. The device is intended for use in general purpose applications. It has nickel-plated standard fast-on terminals solderable using lead (Pb...
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- | - | - | - | - | - | - | - | - | 4Pins | 150°C | VS-GBPC Series | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRLML2402PBF
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SC06986 |
Power MOSFET, N Channel, 20 V, 1.2 A, 0.25 ohm, SOT-23, Surface Mount INFINEON The IRLML2402PBF is a N-channel HEXFET® Power MOSFET with lower switch losses and increased reliability. The international rectifier utilizes advanced processing techniques to achieve extremely low on-resistant per silicon area. This benefit, combined with...
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N Channel | 20V | 1.2A | 0.25ohm | SOT-23 | Surface Mount | 4.5V | 700mV | 540mW | 3Pins | 150°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BZT03C30-TR
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SC07139 |
Zener Single Diode, 30 V, 3.25 W, SOD-57, 2 Pins, 175 °C, Through Hole VISHAY The BZT03 series Zener Diode with glass passivated junction and hermetically sealed package. It is used in medium power voltage regulators and medium power transient suppression circuits. • Clamping time in picoseconds • UL94V-0 Moulding compound flammabil...
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- | - | - | - | - | - | - | - | 3.25W | 2Pins | 175°C | BZT03 Series | AEC-Q101 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BC549C
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SC12757 |
Transistor, NPN, TO92 MULTICOMP PRO The BC549C from Multicomp Pro are through hole, NPN silicon planar epitaxial general purpose transistor in TO-92 metal can package. This device is typically used in driver stages of audio amplifiers, tape recorders, low noise input stages, Hi-Fi amplifiers...
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- | - | - | - | TO-92 | Through Hole | - | - | 625mW | 3Pins | 150°C | Multicomp Pro Bipolar Transistor | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BU406
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SC06796 |
Transistor, NPN, TO220 MULTICOMP PRO The BU406 is a NPN Power Transistor for horizontal deflection output stages of TV and CTV circuits. • High voltage • Collector-emitter sustaining voltage (Vceo (sus) = 400V minimum) • Low saturation voltage • Fast switching speed • Multicomp Pro products a...
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1+ €1.1305 (€1.39) 10+ €0.9877 (€1.21) 100+ €0.8568 (€1.05) 500+ €0.7021 (€0.86) |
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- | - | - | - | TO-220 | Through Hole | - | - | 60W | 3Pins | 150°C | Multicomp Pro Bipolar Power Transistors NPN | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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W01G-E4/51
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SC08149 |
Bridge Rectifier, Single Phase, 100 V, 1.5 A, Through Hole, 4 Pins, 1 V VISHAY The W01G-E4/51 is a single phase glass passivated Bridge Rectifier with silver-plated leads terminals and UL94V-0 flammability-rated case. Polarity as marked on the body. High case dielectric strength and High surge current capability. Ideal for printed ci...
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5+ €0.6307 (€0.78) 25+ €0.5593 (€0.69) 100+ €0.5117 (€0.63) |
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- | - | - | - | - | - | - | - | - | 4Pins | 150°C | W01G | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BZX79-C3V0.
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SC05690 |
Zener Single Diode, 3 V, 500 mW, DO-35, 2 Pins, 200 °C NXP • Power Dissipation : 500mW • No. of Pins : 2Pins • Operating Temperature Max : 200°C • Product Range : BZX79
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- | - | - | - | - | - | - | - | 500mW | 2Pins | 200°C | BZX79 | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRF2907ZPBF
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SC08253 |
Power MOSFET, N Channel, 75 V, 170 A, 0.0045 ohm, TO-220, Through Hole INFINEON The IRF2907ZPBF is a HEXFET® single N-channel Power MOSFET utilizes the latest processing techniques to achieve extremely low ON-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching spee...
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N Channel | - | - | 0.0045ohm | - | Through Hole | - | - | 330W | 3Pins | - | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SR504
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SC07449 |
Schottky Rectifier, 40 V, 5 A, Single, DO-201AD, 2 Pins, 550 mV TAIWAN SEMICONDUCTOR The SR504 is a Schottky Barrier Rectifier with moulded plastic case and solderable axial-lead as per MIL- STD-202 standard. • Colour band denotes cathode end • Low forward voltage drop • High current capability • High reliability • High surge current capab...
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- | - | - | - | - | - | - | - | - | 2Pins | 125°C | SR5xx Series | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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ZVN3310F
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SC07001 |
Power MOSFET, N Channel, 100 V, 100 mA, 10 ohm, SOT-23, Surface Mount DIODES INC. The ZVN3310F is an N-channel Enhancement Mode MOSFET utilizes a structure that combines low input capacitance with relatively low on-resistance and has an intrinsically higher pulse current handling capability in linear mode than a comparable trench techno...
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N Channel | 100V | 100mA | 10ohm | SOT-23 | Surface Mount | 10V | 2.4V | 330mW | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRF3205ZPBF
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SC11149 |
Power MOSFET, Automotive, N Channel, 55 V, 110 A, 0.0065 ohm, TO-220AB, Through Hole INFINEON The IRF3205ZPBF is a HEXFET® N-channel Power MOSFET utilizes the latest processing techniques to achieve extremely low ON-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and i...
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N Channel | 55V | 110A | 0.0065ohm | - | Through Hole | 10V | 4V | 170W | 3Pins | 175°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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HUF75339P3
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SC12748 |
Power MOSFET, N Channel, 55 V, 75 A, 0.012 ohm, TO-220AB, Through Hole ONSEMI The HUF75339P3 is a 55V N-channel UltraFET Power MOSFET. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche...
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N Channel | 55V | 75A | 0.012ohm | TO-220AB | Through Hole | 10V | 4V | 200W | 3Pins | 175°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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GBU8D
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SC07509 |
Bridge Rectifier, Single Phase, 200 V, 8 A, SIP, 4 Pins, 1 V ONSEMI The GBU8D is a Bridge Rectifier with moulded plastic construction and glass-passivated junction. This bridge rectifier is general usage and suitable for many different applications. • 140V Maximum RMS bridge input voltage • 16W Power dissipation • UL Certi...
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- | - | - | - | - | - | - | - | - | 4Pins | 150°C | GBU8D | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BZV85-C6V2
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SC07091 |
Zener Single Diode, 6.2 V, 1 W, DO-41 (DO-204AL), 2 Pins, 200 °C NXP • Power Dissipation : 1W • No. of Pins : 2Pins • Operating Temperature Max : 200°C • Product Range : BZV85
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- | - | - | - | - | - | - | - | 1W | 2Pins | 200°C | BZV85 | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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D45H8G
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SC06761 |
Transistor, PNP, TO220 ONSEMI The D45H8G is a 10A PNP bipolar Power Transistor offers low collector-emitter saturation voltage. It can be used as general purpose power amplification and switching such as output or driver stages in applications such as switching regulators, converters a...
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- | - | - | - | TO-220 | Through Hole | - | - | 70W | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BZX79-C7V5.
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SC05700 |
Zener Single Diode, 7.5 V, 500 mW, DO-35, 2 Pins, 200 °C NXP • Power Dissipation : 500mW • No. of Pins : 2Pins • Operating Temperature Max : 200°C • Product Range : BZX79
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- | - | - | - | - | - | - | - | 500mW | 2Pins | 200°C | BZX79 | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MBR1045G
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SC07390 |
Schottky Rectifier, 45 V, 10 A, Single, TO-220AC, 2 Pins, 570 mV ONSEMI The MBR1045G is a SWITCHMODE™ Power Schottky Barrier Rectifier with epoxy moulded case. • All external surfaces corrosion-resistant • Low forward voltage • Low power loss/high efficiency • UL94V-0 Flammability rating
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- | - | - | - | - | - | - | - | - | 2Pins | 175°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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GBU6D-E3/45
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SC07504 |
Bridge Rectifier, Single Phase, 200 V, 6 A, SIP, 4 Pins, 1 V VISHAY • No. of Pins : 4Pins • Operating Temperature Max : 150°C
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- | - | - | - | - | - | - | - | - | 4Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRF3415PBF
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SC11109 |
Power MOSFET, N Channel, 150 V, 37 A, 0.042 ohm, TO-220AB, Through Hole INFINEON The IRF3415PBF is a HEXFET® fifth generation single N-channel Power MOSFET utilizes advanced processing techniques to achieve extremely low ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design, pr...
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N Channel | 150V | 37A | 0.042ohm | - | Through Hole | 10V | 4V | 150W | 3Pins | 175°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SPW17N80C3
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SC11162 |
Power MOSFET, N Channel, 800 V, 17 A, 0.29 ohm, TO-247, Through Hole INFINEON The SPW17N80C3 is a Cool MOS™ Power Transistor with ultra low gate charge, new revolutionary high voltage technology, extreme dv/dt rated and periodic avalanche rated. • ±20V Gate-source voltage • 260°C Soldering temperature
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N Channel | 800V | 17A | 0.29ohm | TO-247 | Through Hole | 10V | 3V | 208W | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SMBT3904
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SC10623 |
Transistor, NPN, SOT23 INFINEON • Transistor Case Style : SOT-23 • Transistor Mounting : Surface Mount • Power Dissipation : 330mW • No. of Pins : 3Pins • Operating Temperature Max : 150°C
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- | - | - | - | SOT-23 | Surface Mount | - | - | 330mW | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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2N5551
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SC06652 |
Si-N 180V 0.6A 0.31W TO92 Q14 ONSEMI The 2N5551 is a through hole, NPN general purpose amplifier in TO-92 package. This device is designed for general purpose high voltage amplifiers and gas discharge display drivers. • Collector to emitter breakdown voltage of 160V • Collector to emitter sat...
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- | - | - | - | - | Through Hole | - | - | 625mW | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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FZT653
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SC10978 |
Transistor, NPN, SOT223 DIODES INC. The FZT653 is a NPN High Performance Transistor with matte tin-plated terminals, UL94V-0-flame rated moulded plastic case, solderable terminals as per MIL-STD-202, method 208 standard. • Complement to FZT753 • Level-1 per J-STD-020 moisture sensitivity • G...
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- | - | - | - | SOT-223 | Surface Mount | - | - | 2W | 4Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRF9520PBF
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SC11123 |
Power MOSFET, P Channel, 100 V, 6 A, 0.6 ohm, TO-220AB, Through Hole VISHAY The IRF9520PBF is a -100V P-channel Power MOSFET provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The low thermal resistance contributes to its wide acceptance throughout...
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P Channel | 100V | 6A | 0.6ohm | TO-220AB | Through Hole | 10V | 4V | 40W | 3Pins | 175°C | - | - |